| Budget Amount *help |
¥47,580,000 (Direct Cost: ¥36,600,000、Indirect Cost: ¥10,980,000)
Fiscal Year 2009: ¥12,610,000 (Direct Cost: ¥9,700,000、Indirect Cost: ¥2,910,000)
Fiscal Year 2008: ¥21,450,000 (Direct Cost: ¥16,500,000、Indirect Cost: ¥4,950,000)
Fiscal Year 2007: ¥13,520,000 (Direct Cost: ¥10,400,000、Indirect Cost: ¥3,120,000)
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| Research Abstract |
We developed a formation method of high-density and highly uniform array of semiconductor nanowires to realize quantum integrated hardwares. In particular, fabrication and characterization of nanowire field-effect transistors (FETs) were charried out, and vertical nanowire FETs on Si substrates were demonstrated. We also proposed vertically-integrated logic circuits based on vertical FETs and investigated a method to laterally align nanowires for their high-density integration.
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