Development of Quantum Integrated Hardwares based on Semiconductor Nanowires
Project/Area Number |
19206031
|
Research Category |
Grant-in-Aid for Scientific Research (A)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
|
Research Institution | Hokkaido University |
Principal Investigator |
MOTOHISA Junichi Hokkaido University, 大学院・情報科学研究科, 教授 (60212263)
|
Co-Investigator(Kenkyū-buntansha) |
IKEBE Masayuki 北海道大学, 大学院・情報科学研究科, 准教授 (20374613)
橋詰 保 北海道大学, 量子集積エレクトロニクス研究センター, 教授 (80149898)
|
Project Period (FY) |
2007 – 2009
|
Project Status |
Completed (Fiscal Year 2009)
|
Budget Amount *help |
¥47,580,000 (Direct Cost: ¥36,600,000、Indirect Cost: ¥10,980,000)
Fiscal Year 2009: ¥12,610,000 (Direct Cost: ¥9,700,000、Indirect Cost: ¥2,910,000)
Fiscal Year 2008: ¥21,450,000 (Direct Cost: ¥16,500,000、Indirect Cost: ¥4,950,000)
Fiscal Year 2007: ¥13,520,000 (Direct Cost: ¥10,400,000、Indirect Cost: ¥3,120,000)
|
Keywords | 半導体ナノワイヤ / 量子集積ハードウェア / 電界効果トランジスタ / 有機金属気相成長法 / 選択成長 / 論理回路 |
Research Abstract |
We developed a formation method of high-density and highly uniform array of semiconductor nanowires to realize quantum integrated hardwares. In particular, fabrication and characterization of nanowire field-effect transistors (FETs) were charried out, and vertical nanowire FETs on Si substrates were demonstrated. We also proposed vertically-integrated logic circuits based on vertical FETs and investigated a method to laterally align nanowires for their high-density integration.
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Report
(4 results)
Research Products
(99 results)