| Budget Amount *help |
¥47,580,000 (Direct Cost: ¥36,600,000、Indirect Cost: ¥10,980,000)
Fiscal Year 2009: ¥16,120,000 (Direct Cost: ¥12,400,000、Indirect Cost: ¥3,720,000)
Fiscal Year 2008: ¥15,340,000 (Direct Cost: ¥11,800,000、Indirect Cost: ¥3,540,000)
Fiscal Year 2007: ¥16,120,000 (Direct Cost: ¥12,400,000、Indirect Cost: ¥3,720,000)
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| Research Abstract |
N atomic-layer doping in SiGe by SiGe deposition on a thermally nitrided SiGe surface and highly concentrated P atomic-layer doping by lowering temperature of Si deposition on a P atomic layer already formed strained SiGe surface were achieved. Moreover, by lowering temperature of B and subsequent Si depositions on a Si surface, B atomic-layer doped Si with higher carrier concentration was achieved. Additionally, it was clarified that suppression of intermixing and strain relaxation by C atomic-layer doping at a strained SiGe/Si heterointerface and that, in thermal CVD of SiGe and B doped Si epitaxial films, strain significantly influences upon surface reaction, segregation, solid solubility limit and electrical activity of impurity.
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