Development of nitride-semiconductor based green laser diodes on a novel semipolar plane
| Project/Area Number |
19206036
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyoto University |
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Principal Investigator |
FUNATO Mitsuru Kyoto University, 大学院・工学研究科, 准教授 (70240827)
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| Co-Investigator(Kenkyū-buntansha) |
KAWAKAMI Yoichi 京都大学, 大学院・工学研究科, 教授 (30214604)
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| Project Period (FY) |
2007 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥46,670,000 (Direct Cost: ¥35,900,000、Indirect Cost: ¥10,770,000)
Fiscal Year 2009: ¥11,570,000 (Direct Cost: ¥8,900,000、Indirect Cost: ¥2,670,000)
Fiscal Year 2008: ¥15,340,000 (Direct Cost: ¥11,800,000、Indirect Cost: ¥3,540,000)
Fiscal Year 2007: ¥19,760,000 (Direct Cost: ¥15,200,000、Indirect Cost: ¥4,560,000)
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| Keywords | 薄膜 / 量子構造 / 窒化物半導体 / 緑色レーザ / 半極性結晶面 / 発光効率 / 偏光 / 厚膜InGaN |
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| Research Abstract |
Aiming to fabricate laser diodes based on InGaN/GaN quantum wells (QWs) on a novel semipolar (11-22) plane, crystal growth and optical characterization were performed. Growth conditions for each constituent layer have been established. As for optical anisotropy, the polarization was the TE polarization, independent of QW structures. It has been found for the first time that, when the In composition is less than 30%, the in-plane polarization was in the [1-100] direction, whereas, In compositions greater than 30% cause polarization switching to the [-1-123] direction.
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Report
(4 results)
Research Products
(106 results)
