| Budget Amount *help |
¥46,670,000 (Direct Cost: ¥35,900,000、Indirect Cost: ¥10,770,000)
Fiscal Year 2009: ¥11,570,000 (Direct Cost: ¥8,900,000、Indirect Cost: ¥2,670,000)
Fiscal Year 2008: ¥15,340,000 (Direct Cost: ¥11,800,000、Indirect Cost: ¥3,540,000)
Fiscal Year 2007: ¥19,760,000 (Direct Cost: ¥15,200,000、Indirect Cost: ¥4,560,000)
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| Research Abstract |
Aiming to fabricate laser diodes based on InGaN/GaN quantum wells (QWs) on a novel semipolar (11-22) plane, crystal growth and optical characterization were performed. Growth conditions for each constituent layer have been established. As for optical anisotropy, the polarization was the TE polarization, independent of QW structures. It has been found for the first time that, when the In composition is less than 30%, the in-plane polarization was in the [1-100] direction, whereas, In compositions greater than 30% cause polarization switching to the [-1-123] direction.
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