| Co-Investigator(Kenkyū-buntansha) |
SUEMITSU Maki 東北大学, 電気通信研究所, 教授 (00134057)
CHIKYOW Toyohiro 物質・材料研究機構, 半導体材料センター, センター長 (10354333)
NAKAYAMA Takashi 千葉大学, 理学系研究科, 教授 (70189075)
YAMADA Keisaku 筑波大学, 数理物質科学研究科, 教授 (30386734)
SHINADA Takahiro 早稲田大学, 高等研究所, 准教授 (30329099)
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| Budget Amount *help |
¥48,750,000 (Direct Cost: ¥37,500,000、Indirect Cost: ¥11,250,000)
Fiscal Year 2010: ¥7,020,000 (Direct Cost: ¥5,400,000、Indirect Cost: ¥1,620,000)
Fiscal Year 2009: ¥10,270,000 (Direct Cost: ¥7,900,000、Indirect Cost: ¥2,370,000)
Fiscal Year 2008: ¥9,880,000 (Direct Cost: ¥7,600,000、Indirect Cost: ¥2,280,000)
Fiscal Year 2007: ¥21,580,000 (Direct Cost: ¥16,600,000、Indirect Cost: ¥4,980,000)
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| Research Abstract |
The influences of the interface roughness, the dopant distribution fluctuation and the surface potential variability on the device performance of nano-scale Si-based semiconductor devices were investigated. As a result, a deep understanding of suppressing the statistical variability was obtained in both material and device levels. These results indicate the guideline for developing the future nano-scale semiconductor devices based on the electronic properties of atomic-scale silicon crystals.
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