| Budget Amount *help |
¥14,430,000 (Direct Cost: ¥11,100,000、Indirect Cost: ¥3,330,000)
Fiscal Year 2009: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2008: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2007: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
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| Research Abstract |
Fine pores were formed in silicon wafers by processing them in a mixed solution containing hydrofluoric acid and hydrogen peroxide after loading fine metal particles such as platinum and gold on the surface. The similar phenomenon occurred by using needle electrodes made of these metals, by bringing the electrodes into contact with silicon wafers in a hydrofluoric acid solution. From the analysis of the relationship between current and pores formed, we found that pores or grooves are formed in a controlled manner in n-type silicon or highly resistive p-type silicon without causing corrosion at places not being in contact with the electrodes. The results will provide a basis for the development of novel micro- and nano-machining process for semiconductors.
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