• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Investigation of nano-scale conductance properties of few layer graphene films

Research Project

Project/Area Number 19310085
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Nanomaterials/Nanobioscience
Research InstitutionNTT Basic Research Laboratories

Principal Investigator

NAGASE Masao  NTT Basic Research Laboratories, 量子電子物性研究部, 主任研究員 (20393762)

Co-Investigator(Kenkyū-buntansha) HIBINO Hiroki  日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主幹研究員 (60393740)
SEKINE Yoshiaki  日本電信電話株式会社NTT物性科学基礎研究所, 量子電子物性研究部, 社員 (70393783)
KAGASHIMA Hiroyuki  日本電信電話株式会社NTT物性科学基礎研究所, 量子電子物性研究部, 主任研究員 (70374072)
YAMAGUCHI Hiroshi  日本電信電話株式会社NTT物性科学基礎研究所, 量子電子物性研究部, 部長 (60374071)
OKAMOTO Hajime  日本電信電話株式会社NTT物性科学基礎研究所, 量子電子物性研究部, 社員 (20350465)
Project Period (FY) 2007 – 2009
Project Status Completed (Fiscal Year 2009)
Budget Amount *help
¥19,890,000 (Direct Cost: ¥15,300,000、Indirect Cost: ¥4,590,000)
Fiscal Year 2009: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2008: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2007: ¥12,220,000 (Direct Cost: ¥9,400,000、Indirect Cost: ¥2,820,000)
Keywordsナノ材料 / マイクロ・ナノデバイス / 計測工学 / グラフェン / 低エネルギー電子顕微鏡 / ナノギャップ電極
Research Abstract

A main purpose of this study is an investigation of nano-scale conductance properties of few layer graphene films on SiC substrate. A precise control of layer numbers of graphene has been realized using low-energy electron microscopy. The local conductances of few layer graphene were measured using an integrated nanogap probe which was newly developed for this study. The measured results revealed a confinement effect in graphene nano-islands and a conductance modification near atomic step in continual graphene sheets. A lot of useful knowledge for future graphene electronics has been obtained.

Report

(4 results)
  • 2009 Annual Research Report   Final Research Report ( PDF )
  • 2008 Annual Research Report
  • 2007 Annual Research Report
  • Research Products

    (120 results)

All 2010 2009 2008 Other

All Journal Article (29 results) (of which Peer Reviewed: 22 results) Presentation (77 results) Book (1 results) Remarks (10 results) Patent(Industrial Property Rights) (3 results)

  • [Journal Article] Epitaxial few-layer graphene: toward single crystal growth2010

    • Author(s)
      H. Hibino, H. Kageshima, M. Nagase
    • Journal Title

      J. Phys. D (in press)

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Contact Conductance Measurement of Locally Suspended Graphene on SiC2010

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima H. Yamaguchi
    • Journal Title

      Appl. Phys. Express 3

      Pages: 45101-45101

    • NAID

      10027014343

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] 炭素材料グラフェン(寄稿記事)2010

    • Author(s)
      永瀬雅夫
    • Journal Title

      工業材料 58

      Pages: 44-45

    • Related Report
      2009 Final Research Report
  • [Journal Article] Epitaxial Graphene Growth Studied by Low-energy Electron Microscopy and First-principles2010

    • Author(s)
      H. Kageshima, H. Hibino, M. Nagase, H. Yamaguchi
    • Journal Title

      Materials Science Forum

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Epitaxial Graphene Growth Studied by Low-energy Electron Microscopy and First-principles2010

    • Author(s)
      Hiroyuki Kageshima, Hitoki Hibino, Masao Nagase, Hiroshi Yamaguchi
    • Journal Title

      Materials Science Forum 645-648

      Pages: 597-602

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Contact Conductance Measurement of Locally Suspended Graphene on SiC2010

    • Author(s)
      Masao Nagase, Hiroki Hibino, Hiroyuki Kageshima, Hiroshi Yamaguchi
    • Journal Title

      Appl.Phys.Express 3

    • NAID

      10027014343

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Local Conductance Measurement of Double-layer Graphene on SiC Substrate2009

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima H. Yamaguchi
    • Journal Title

      Nanotechnology 20

      Pages: 445704-445704

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Stacking domains of epitaxial few-layer graphene on SiC(0001)2009

    • Author(s)
      H. Hibino, S. Mizuno, H. Kageshima, M. Nagase, H. Yamaguchi
    • Journal Title

      Phys. Rev. B 80

      Pages: 85406-85406

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Direct Actuation of GaAs Membrane with the Microprobe of Scanning Probe Microscopy2009

    • Author(s)
      K. TAMARU, K. NONAKA, M. NAGASE, H. YAMAGUCHI, S. WARISAWA, S. ISHIHARA
    • Journal Title

      Jpn. J. Appl. Phys. 48

    • NAID

      210000066954

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces2009

    • Author(s)
      H. Kageshima, H. Hibino, M. Nagase, H. Yamaguchi
    • Journal Title

      Appl. Phys. Express 2

      Pages: 65502-65502

    • NAID

      10025086838

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] グラフェンのエレクトロニクスへの展開2009

    • Author(s)
      永瀬雅夫
    • Journal Title

      未来材料 9

      Pages: 38-45

    • NAID

      40016569099

    • Related Report
      2009 Final Research Report 2008 Annual Research Report
  • [Journal Article] グラフェンのミクロスコピックな物性の解明(寄稿記事)2009

    • Author(s)
      永瀬雅夫
    • Journal Title

      セラミックス 44

      Pages: 181-182

    • Related Report
      2009 Final Research Report
  • [Journal Article] Number-of-layers dependence of electronic properties of epitaxial few-layer graphene investigated by photoelectron emission microscopy2009

    • Author(s)
      H. Hibino, H. Kageshima, M. Kotsugi, F. Maeda, F.-Z. Guo, Y. Watanabe
    • Journal Title

      Phys. Rev. B 79

      Pages: 125437-125437

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Theoretical Study of Epitaxial Graphene Growth on SiC(0001)Surfaces2009

    • Author(s)
      Hiroyuki Kageshima, Hiroki Hibino, Masao Nagase, Hiroshi Yamaguchi
    • Journal Title

      Appl.Phys.Express 2

    • NAID

      10025086838

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Direct Actuation of GaAs Membrane with the Microprobe of Scanning Probe Microscopy2009

    • Author(s)
      Kojiro TAMARU, Keiichiro NONAKA, Masao NAGASE, Hiroshi YAMAGUCHI, Shinichi WARISAWA, Sunao ISHIHARA
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • NAID

      210000066954

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Metrology of microscopic properties of graphene on SiC2009

    • Author(s)
      M.Nagase, H.Hibino, H.Kageshima, H.Yamaguchi
    • Journal Title

      信学技報ED2009-61 SDM2009-56

      Pages: 47-52

    • Related Report
      2009 Annual Research Report
  • [Journal Article] Stacking domains of epitaxial few-layer graphene on SiC(0001)2009

    • Author(s)
      H.Hibino, S.Mizuno, H.Kageshima, M.Nagase, H.Yamaguchi
    • Journal Title

      Phys.Rev.B 80

      Pages: 85406-85406

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Local Conductance Measurement of Double-layer Graphene on SiC Substrate2009

    • Author(s)
      M.Nagase, H.Hibino, H.Kageshima, H.Yamaguchi
    • Journal Title

      Nanotechnology 20

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article]2009

    • Author(s)
      監修:斉木幸一朗、徳本洋志
    • Journal Title

      グラフェンの機能と応用展望(一部(第11章SiC上のグラフェン成長と電気特性)の執筆を分担)(シーエムシー出版)

      Pages: 147-158

    • Related Report
      2009 Annual Research Report
  • [Journal Article] Number-of-layers dependence of electronic properties of epitaxial few-layer graphene investigated by photoelectron emission microscopy2009

    • Author(s)
      H. Hibino, H. Kageshima, M. Kotsugi, F. Maeda, F. -Z. Guo, Y. Watanabe
    • Journal Title

      Phys. Rev. B 79

      Pages: 125437-125437

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] グラフェンのミクロスコピックな物性の解明2009

    • Author(s)
      永瀬雅夫
    • Journal Title

      セラミックス(日本セラミックス協会誌) 44

      Pages: 181-182

    • Related Report
      2008 Annual Research Report
  • [Journal Article] In-plane conductance measurement of graphene nanoislands using an integrated nanogap probe2008

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
    • Journal Title

      Nanotechnology 19

      Pages: 495701-495701

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Thickness Determination of Graphene Layers Formed on SiC Using Low-Energy Electron Microscopy2008

    • Author(s)
      H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi, H. Yamaguchi
    • Journal Title

      e-J. Surf. Sci. Nanotech. 6

      Pages: 107-110

    • Related Report
      2009 Final Research Report 2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Height Dependence of Young's Modulus for Carbon Nano-pillars Grown by Focused-Ion-Beam-Induced Chemical Vapor Deposition2008

    • Author(s)
      K. Nonaka, K. Tamaru, M. Nagase, H. Yamaguchi, S. Warisawa, S. Ishihara
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 5116-5119

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Local conductance measurement of few-layer graphene on SiC substrate using an integrated nanogap probe2008

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
    • Journal Title

      J. Phys: Conf. Series 100

      Pages: 52006-52006

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Height Dependence of Young's Modulus for Carbon Nanopillars Grown by Focused-Ion-Beam-Induced Chemical Vapor Depositio2008

    • Author(s)
      K. Nonaka, K. Tamaru, M. Nagase, H. Yamaguchi, S. Warisawa, S. Ishihara
    • Journal Title

      Jpn. J. Appl. Phys. 47

      Pages: 5116-5119

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] In-plane conductance measurement of graphene nanoislands using an integrated nanogapprobe2008

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
    • Journal Title

      Nanotechnology 19

      Pages: 495701-495701

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Local conductance measurement of few-layer graphene on SiC substrate using an integrated nanogap probe2008

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima and H. Yamaguchi,
    • Journal Title

      J. Phys : Conf. Series 100

      Pages: 52006-52006

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Metrology of microscopic properties of graphene on SiC

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
    • Journal Title

      信学技報 SDM2009-56

      Pages: 47-52

    • Related Report
      2009 Final Research Report
  • [Presentation] SiC上エピタキシャルグラフェンの原子構造と電子状態"(招待講演)2010

    • Author(s)
      影島博之
    • Organizer
      日本物理学会2010年春季第65回年次大会
    • Place of Presentation
      岡山大学/岡山市
    • Year and Date
      2010-03-22
    • Related Report
      2009 Final Research Report
  • [Presentation] SiC上エピタキシャルグラフェンの原子構造と電子状態2010

    • Author(s)
      影島博之
    • Organizer
      日本物理学会 2010年春季 第65回年次大会(招待講演)
    • Place of Presentation
      岡山大学、岡山市
    • Year and Date
      2010-03-22
    • Related Report
      2009 Annual Research Report
  • [Presentation] SiC上に成長したエピタキシャルグラフェンの構造と電子特性の表面電子顕微鏡による解析"(招待講演)2010

    • Author(s)
      日比野浩樹
    • Organizer
      日本物理学会2010年春季第65回年次大会
    • Place of Presentation
      岡山大学/岡山市
    • Year and Date
      2010-03-21
    • Related Report
      2009 Final Research Report
  • [Presentation] SiC上グラフェントランジスタの電気特性評価2010

    • Author(s)
      田邉真一, 関根佳明, 永瀬雅夫, 日比野浩樹
    • Organizer
      2010年春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学/平塚市
    • Year and Date
      2010-03-19
    • Related Report
      2009 Final Research Report
  • [Presentation] siC(0001)面上に形成されるグラフェン島の理論検討2010

    • Author(s)
      影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
    • Organizer
      2010年春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学/平塚市
    • Year and Date
      2010-03-18
    • Related Report
      2009 Final Research Report
  • [Presentation] 炭化反応が駆動する少数層グラフェン上のSiナノ粒子の移動2010

    • Author(s)
      日比野浩樹, 影島博之, 永瀬雅夫, 山口浩司
    • Organizer
      2010年春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学/平塚市
    • Year and Date
      2010-03-18
    • Related Report
      2009 Final Research Report
  • [Presentation] SiC上数層グラフェンの断面TEM観察2010

    • Author(s)
      永瀬雅夫, 日比野浩樹, 影島博之, 山口浩司
    • Organizer
      2010年春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学/平塚市
    • Year and Date
      2010-03-18
    • Related Report
      2009 Final Research Report
  • [Presentation] SiC(0001)面上に形成されるグラフェン島の理論検討2010

    • Author(s)
      影島博之、日比野浩樹、永瀬雅夫、山口浩司
    • Organizer
      2010年春季 第57回 応用物理学関係連合講演会
    • Place of Presentation
      東海大学、平塚市
    • Year and Date
      2010-03-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] グラフェン開発の現状と極限材料応用の可能性について(招待講演)2010

    • Author(s)
      永瀬雅夫
    • Organizer
      平成21年度第2回理工学研究所講演会(日本大学
    • Place of Presentation
      日本大学理工学部駿河台校舎, 東京都
    • Year and Date
      2010-03-01
    • Related Report
      2009 Final Research Report
  • [Presentation] 炭素新材料グラフェン(招待講演)2010

    • Author(s)
      永瀬雅夫
    • Organizer
      第5回表面技術会議「環境対応の先端ナノ構造」
    • Place of Presentation
      東京ビックサイト, 東京都
    • Year and Date
      2010-02-18
    • Related Report
      2009 Final Research Report
  • [Presentation] SiC(0001)上グラフェン成長のエナージェティクス(招待講演)2010

    • Author(s)
      影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
    • Organizer
      第2回九州大学応用力学研究所グラフェン研究会「エピタキシャルグラフェンの形成と物性」
    • Place of Presentation
      神戸国際会議場/神戸
    • Year and Date
      2010-01-29
    • Related Report
      2009 Final Research Report
  • [Presentation] SiC(0001)上グラフェン成長のエナージェティクス2010

    • Author(s)
      影島博之、日比野浩樹、永瀬雅夫、山口浩司
    • Organizer
      第2回九州大学応用力学研究所グラフェン研究会「エピタキシャルグラフェンの形成と物性」(招待講演)
    • Place of Presentation
      九州大学、福岡市
    • Year and Date
      2010-01-29
    • Related Report
      2009 Annual Research Report
  • [Presentation] sic単結晶基板上のエピタキシャルグラフェン形成と基礎物性-デバイス展開を目指して-(招待講演)2009

    • Author(s)
      影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
    • Organizer
      第18回SiC及び関連ワイドギャップ半導体研究会
    • Place of Presentation
      神戸国際会議場/神戸
    • Year and Date
      2009-12-18
    • Related Report
      2009 Final Research Report
  • [Presentation] SiC単結晶基板上のエピタキシャルグラフェン形成と基礎物性-デバイス展開を目指して-」2009

    • Author(s)
      影島博之、日比野浩樹、永瀬雅夫、山口浩司
    • Organizer
      第18回SiC及び関連ワイドギャップ半導体研究会(招待講演)
    • Place of Presentation
      神戸国際会議場、神戸市
    • Year and Date
      2009-12-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] Microscopic characterization of few-layer graphene on SiC using an integrated nanogap probe2009

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
    • Organizer
      17th Int. Colloquium on Scanning Probe Microscopy (ICSPM17
    • Place of Presentation
      Atagawa-Height /Higashi-izu/Japan(Invited)
    • Year and Date
      2009-12-12
    • Related Report
      2009 Final Research Report
  • [Presentation] Microscopic characterization of few-layer graphene on SiC using an integrated nanogap probe2009

    • Author(s)
      M.Nagase, H.Hibino, H.Kageshima, H.Yamaguchi
    • Organizer
      17th Int.Colloquium on Scanning Probe Microscopy(ICSPM17)[Invited]
    • Place of Presentation
      Atagawa-Height, Higashi-izu, Japan
    • Year and Date
      2009-12-12
    • Related Report
      2009 Annual Research Report
  • [Presentation] Microscopic Evaluations of Structure and Electronic Properties of Epitaxial Graphene2009

    • Author(s)
      H. Hibino, H. Kageshima, M. Nagase
    • Organizer
      7th Int. Symp. Atomic Level Characterizations for New Materials and Devices (ALC'09)
    • Place of Presentation
      The Westin Maui Resort & Spa/Maui/Hawaii/ USA(Invited)
    • Year and Date
      2009-12-09
    • Related Report
      2009 Final Research Report
  • [Presentation] Microscopic Evaluations of Structure and Electronic Properties of Epitaxial Graphene2009

    • Author(s)
      H.Hibino, H.Kageshima, M.Nagase
    • Organizer
      7th Int.Symp.Atomic Level Characterizations for New Materials and Devices(ALC'09)[Invited]
    • Place of Presentation
      The Westin Maui Resort & Spa, Hawaii, USA
    • Year and Date
      2009-12-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] Microscopic characterization of few-layer graphene on SiC2009

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
    • Organizer
      Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN2009)
    • Place of Presentation
      Sheraton Maui Resort and Spa, Kaanapali/Hawaii/USA(Invited)
    • Year and Date
      2009-12-03
    • Related Report
      2009 Final Research Report
  • [Presentation] Microscopic characterization of few-layer graphene on SiC2009

    • Author(s)
      M.Nagase, H.Hibino, H.Kageshima, H.Yamaguchi
    • Organizer
      Int.Symp.Advanced Nanodevices and Nanotechnology(ISANN2009)[Invited]
    • Place of Presentation
      Sheraton Maui Resort and Spa, Kaanapali, Hawaii, USA
    • Year and Date
      2009-12-03
    • Related Report
      2009 Annual Research Report
  • [Presentation] グラフェンの基礎物性とその理論-デバイス応用の観点から-2009

    • Author(s)
      影島博之
    • Organizer
      早稲田大学大学院先進理工学研究科第82回QMSセミナー
    • Place of Presentation
      早稲田大学/新宿区(招待講演)
    • Year and Date
      2009-11-20
    • Related Report
      2009 Final Research Report
  • [Presentation] グラフェンの基礎物性とその理論-デバイス応用の観点から-2009

    • Author(s)
      影島博之
    • Organizer
      早稲田大学大学院先進理工学研究科第82回QMSセミナー(招待講演)
    • Place of Presentation
      早稲田大学、新宿区
    • Year and Date
      2009-11-20
    • Related Report
      2009 Annual Research Report
  • [Presentation] Structure and Electronic Properties of Epitaxial Graphene grown on SiC Studied by Surface Electron Microscopy2009

    • Author(s)
      H. Hibino, H. Kageshima, M. Nagase
    • Organizer
      22nd Int. Microproesses and Nanotechnology Conf. (MNC2009)
    • Place of Presentation
      Sheraton Sapporo Hotel/Sapporo/Japan(Invited)
    • Year and Date
      2009-11-18
    • Related Report
      2009 Final Research Report
  • [Presentation] Structure and Electronic Properties of Epitaxial Graphene grown on SiC Studied by Surface Electron Microscopy2009

    • Author(s)
      H.Hibino, H.Kageshima, M.Nagase
    • Organizer
      22nd Int.Microproesses and Nanotechnology Conf.(MNC2009)[Invited]
    • Place of Presentation
      Sheraton Sapporo Hotel, Sapporo, Japan
    • Year and Date
      2009-11-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] sic上グラフェン島の理論検討2009

    • Author(s)
      影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
    • Organizer
      東京大学物性研究所短期研究会
    • Place of Presentation
      東大物性研/柏市
    • Year and Date
      2009-10-24
    • Related Report
      2009 Final Research Report
  • [Presentation] SiC上グラフェン島の理論検討2009

    • Author(s)
      影島博之、日比野浩樹、永瀬雅夫、山口浩司
    • Organizer
      東京大学物性研究所短期研究会
    • Place of Presentation
      東大物性研、柏市
    • Year and Date
      2009-10-24
    • Related Report
      2009 Annual Research Report
  • [Presentation] Study of Epitaxial Graphene Growth using LEEM and First-principles2009

    • Author(s)
      H. Kageshima, H. Hibino, M. Nagase
    • Organizer
      13th Int. Conf. on Silicon Carbide and Related Materials, (ICSCRM2009)
    • Place of Presentation
      Nurnberg/ Germany(Invited)
    • Year and Date
      2009-10-12
    • Related Report
      2009 Final Research Report
  • [Presentation] Study of Epitaxial Graphene Growth using LEEM and First-principles2009

    • Author(s)
      H.Kageshima, H.Hibino, M.Nagase
    • Organizer
      13th International Conference on Silicon Carbide and Related Materials,(ICSCRM2009)[Invited]
    • Place of Presentation
      Nurnberg, Germany
    • Year and Date
      2009-10-12
    • Related Report
      2009 Annual Research Report
  • [Presentation] Surface electron microscopy studies of structure and electronic properties of epitaxial few-layer graphene grown on SiC2009

    • Author(s)
      H. Hibino
    • Organizer
      2009 RIEC Cooperative Research Project on "Control and Elucidation of Growth Mechanism of Graphene for device applications in the next generation"
    • Place of Presentation
      RIEC/Tohoku Univ. /Sendai/ Japan
    • Year and Date
      2009-10-06
    • Related Report
      2009 Final Research Report
  • [Presentation] First-principles study on energetics of C aggregation on SiC surfaces for understanding epitaxial graphene growth mechanism2009

    • Author(s)
      H. Kageshima
    • Organizer
      2009 RIEC Cooperative Research Project on "Control and Elucidation of Growth Mechanism of Graphene for device applications in the next generation"
    • Place of Presentation
      RIEC/Tohoku Univ. /Sendai/Japan
    • Year and Date
      2009-10-06
    • Related Report
      2009 Final Research Report
  • [Presentation] Microscopic conductance measurement of few-layer graphene on SiC2009

    • Author(s)
      M. Nagase
    • Organizer
      2009 RIEC Cooperative Research Project on "Control and Elucidation of Growth Mechanism of Graphene for device applications in the next generation"
    • Place of Presentation
      RIEC/Tohoku Univ. /Sendai/Japan
    • Year and Date
      2009-10-06
    • Related Report
      2009 Final Research Report
  • [Presentation] Microscopic conductance measurement of few-layer graphene on SiC2009

    • Author(s)
      M.Nagase
    • Organizer
      2009 RIEC Cooperative Research Project on "Control and Elucidation of Growth Mechanism of Graphene for device applications in the next generation"
    • Place of Presentation
      RIEC, Tohoku Univ., Sendai, Japan
    • Year and Date
      2009-10-06
    • Related Report
      2009 Annual Research Report
  • [Presentation] First-principles study on energetics of C aggregation on SiC surfaces for understanding epitaxial graphene growth mechanism2009

    • Author(s)
      H.Kageshima
    • Organizer
      2009 RIEC Cooperative Research Project on "Control and Elucidation of Growth Mechanism of Graphene for device applications in the next generation"
    • Place of Presentation
      RIEC, Tohoku Univ., Sendai, Japan
    • Year and Date
      2009-10-06
    • Related Report
      2009 Annual Research Report
  • [Presentation] Surface electron microscopy studies of structure and electronic properties of epitaxial few-layer graphene grown on SiC2009

    • Author(s)
      H.Hibino
    • Organizer
      2009 RIEC Cooperative Research Project on "Control and Elucidation of Growth Mechanism of Graphene for device applications in the next generation"
    • Place of Presentation
      RIEC, Tohoku Univ., Sendai, Japan
    • Year and Date
      2009-10-06
    • Related Report
      2009 Annual Research Report
  • [Presentation] SiC(0001)上のC原子の吸着構造とその安定性2009

    • Author(s)
      影島博之、日比野浩樹、永瀬雅夫、山口浩司
    • Organizer
      日本物理学会2009年秋季大会
    • Place of Presentation
      熊本大学、熊本市
    • Year and Date
      2009-09-27
    • Related Report
      2009 Annual Research Report
  • [Presentation] SiC上グラフェンへの導電性プローブのコンタクト特性(2)2009

    • Author(s)
      永瀬雅夫, 日比野浩樹, 影島博之, 山口浩司
    • Organizer
      2009年秋季・第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学/富山市
    • Year and Date
      2009-09-09
    • Related Report
      2009 Final Research Report
  • [Presentation] SiC上グラフェンへの導電性プローブのコンタクト特性(2)2009

    • Author(s)
      永瀬雅夫、日比野浩樹、影島博之、山口浩司
    • Organizer
      2009年秋季・第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学、富山市
    • Year and Date
      2009-09-09
    • Related Report
      2009 Annual Research Report
  • [Presentation] SiC(0001)面上グラフェン形成の第一原理計算-吸着原子・原子空孔の影響-2009

    • Author(s)
      影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
    • Organizer
      2009年秋季・第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学/富山市
    • Year and Date
      2009-09-08
    • Related Report
      2009 Final Research Report
  • [Presentation] エピタキシャルグラフェン/SiC界面構造のX線CTR散乱による解析2009

    • Author(s)
      日比野浩樹, 前田文彦, 影島博之, 永瀬雅夫, 広沢一郎, 渡辺義夫
    • Organizer
      2009年秋季・第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学/富山市
    • Year and Date
      2009-09-08
    • Related Report
      2009 Final Research Report
  • [Presentation] エピタキシャルグラフェン/SiC界面構造のX線CTR散乱による解析2009

    • Author(s)
      日比野浩樹、前田文彦、影島博之、永瀬雅夫、広沢一郎、渡辺義夫
    • Organizer
      2009年秋季・第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学、富山市
    • Year and Date
      2009-09-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] SiC(0001)面上グラフェン形成の第一原理計算-吸着原子・原子空孔の影響-」2009

    • Author(s)
      影島博之、日比野浩樹、永瀬雅夫、山口浩司
    • Organizer
      2009年秋季・第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学、富山市
    • Year and Date
      2009-09-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] "エピタキシャル・グラフェンの走査プローブ顕微鏡による物性評価"(招待講演)2009

    • Author(s)
      永瀬雅夫
    • Organizer
      有機バイオSPM研究会2009「先端材料をプローブ顕微鏡で観る・測る」
    • Place of Presentation
      幕張メッセ国際展示場/千葉市
    • Year and Date
      2009-09-04
    • Related Report
      2009 Final Research Report
  • [Presentation] エピタキシャル・グラフェンの走査プローブ顕微鏡による物性評価2009

    • Author(s)
      永瀬雅夫
    • Organizer
      有機バイオSPM研究会・2009「先端材料をプローブ顕微鏡で観る・測る」(招待講演)
    • Place of Presentation
      幕張メッセ国際展示場, 千葉市
    • Year and Date
      2009-09-04
    • Related Report
      2009 Annual Research Report
  • [Presentation] Metrology of microscopic properties of graphene on SiC2009

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
    • Organizer
      2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2009)
    • Place of Presentation
      Haeundae Grand Hotel/Busan/ Korea(Invited)
    • Year and Date
      2009-06-24
    • Related Report
      2009 Final Research Report
  • [Presentation] Metrology of microscopic properties of graphene on SiC2009

    • Author(s)
      M.Nagase, H.Hibino, H.Kageshima, H.Yamaguchi
    • Organizer
      2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD2009)[Invited]
    • Place of Presentation
      Haeundae Grand Hotel, Busan, Korea
    • Year and Date
      2009-06-24
    • Related Report
      2009 Annual Research Report
  • [Presentation] グラフェンの現状と宇宙エレベータテザーとしての可能性について"(招待講演)2009

    • Author(s)
      永瀬雅夫
    • Organizer
      (社)宇宙エレベータ協会第3回ワークショップ
    • Place of Presentation
      日本大学理工学部駿河台キャンパス/東京都
    • Year and Date
      2009-05-24
    • Related Report
      2009 Final Research Report
  • [Presentation] グラフェンの現状と宇宙エレベータテザーとしての可能性について2009

    • Author(s)
      永瀬雅夫
    • Organizer
      (社)宇宙エレベータ協会・第3回ワークショップ(招待講演)
    • Place of Presentation
      日本大学理工学部駿河台キャンパス、東京都
    • Year and Date
      2009-05-24
    • Related Report
      2009 Annual Research Report
  • [Presentation] SiC上グラフェンの物性評価(招待講演)2009

    • Author(s)
      永瀬雅夫
    • Organizer
      有機デバイス研究会第77会研究会「グラフェンの最新技術動向と展望」
    • Place of Presentation
      静岡大学浜松キャンパス/浜松市
    • Year and Date
      2009-04-24
    • Related Report
      2009 Final Research Report
  • [Presentation] SiC上グラフェンの物性評価2009

    • Author(s)
      永瀬雅夫
    • Organizer
      有機デバイス研究会・第77会研究会「グラフェンの最新技術動向と展望」(招待講演)
    • Place of Presentation
      静岡大学浜松キャンパス・佐鳴会館、浜松市
    • Year and Date
      2009-04-24
    • Related Report
      2009 Annual Research Report
  • [Presentation] SiC上グラフェンへの導電性プローブのコンタクト特性2009

    • Author(s)
      永瀬雅夫, 日比野浩樹, 影島博之, 山口浩司
    • Organizer
      2009年(平成21年)春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学/つくば市
    • Year and Date
      2009-04-01
    • Related Report
      2009 Final Research Report
  • [Presentation] SiC上グラフェンへの導電性プローブのコンタクト特性2009

    • Author(s)
      永瀬雅夫、日比野浩樹、影島博之、山口浩司
    • Organizer
      2009年(平成21年)春季 第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学, つくば市
    • Year and Date
      2009-04-01
    • Related Report
      2009 Annual Research Report
  • [Presentation] SiC(0001)面上エピタキシャルグラフェン形成に関する第一原理計算2009

    • Author(s)
      影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
    • Organizer
      2009年(平成21年)春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学/つくば市
    • Year and Date
      2009-03-31
    • Related Report
      2009 Final Research Report
  • [Presentation] SiC上に成長したエピタキシャルグラフェンの積層ドメイン構造2009

    • Author(s)
      日比野浩樹, 水野清義, 影島博之, 永瀬雅夫, 山口浩司
    • Organizer
      2009年(平成21年)春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学/つくば市
    • Year and Date
      2009-03-31
    • Related Report
      2009 Final Research Report
  • [Presentation] SiC上に成長したエピタキシャルグラフェンの積層ドメイン構造2009

    • Author(s)
      日比野浩樹, 水野清義, 影島博之, 永瀬雅夫, 山口浩司
    • Organizer
      2009年(平成21年)春季 第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学, つくば市
    • Year and Date
      2009-03-31
    • Related Report
      2008 Annual Research Report
  • [Presentation] SiC(0001)面上エピタキシャルグラフェン形成に関する第一原理計算2009

    • Author(s)
      影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
    • Organizer
      2009年(平成21年)春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学, つくば市
    • Year and Date
      2009-03-31
    • Related Report
      2008 Annual Research Report
  • [Presentation] Novel microscopies for graphene on SiC2009

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima H. Yamaguchi
    • Organizer
      2009 RCIQE Int. Seminar on "Advanced Semiconductor Materials and Devices"
    • Place of Presentation
      Hokkaido Univ. /Sapporo/ Japan(Invited)
    • Year and Date
      2009-03-02
    • Related Report
      2009 Final Research Report
  • [Presentation] Novel microscopies for graphene on SiC" : [Invited]2009

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
    • Organizer
      2009 RCIQE Int. Seminar on "Advanced Semiconductor Materials and Devil
    • Place of Presentation
      Conference Hall Hokkaido Univ., Sapporo. Japan
    • Year and Date
      2009-03-02
    • Related Report
      2008 Annual Research Report
  • [Presentation] Local Conductance of Deformed Graphene Near Atomic Steps on SiC2009

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
    • Organizer
      Int. Symp. Nanoscale Transport and Technol. (ISNTT2009)
    • Place of Presentation
      NTT Atsugi R&D Center/Atsugi/Japan
    • Year and Date
      2009-01-23
    • Related Report
      2009 Final Research Report
  • [Presentation] Local Conductance of Deformed Graphene Near Atomic Steps on SiC2009

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
    • Organizer
      Int. Symp. Nanoscale Transport and Technol. (ISNTT2009)
    • Place of Presentation
      NTT Atsugi R&D Center, Atsugi, Japan
    • Year and Date
      2009-01-23
    • Related Report
      2008 Annual Research Report
  • [Presentation] SiC上のグラフェン-走査プローブ顕微鏡による評価技術-(招待講演)2009

    • Author(s)
      永瀬雅夫
    • Organizer
      学振ナノプローブテクノロジー第167委員会第53回研究会
    • Place of Presentation
      キャンパスプラザ京都/京都市
    • Year and Date
      2009-01-08
    • Related Report
      2009 Final Research Report
  • [Presentation] SiC上のグラフェジ-走査プローブ顕微鏡による評価技術-:(招待講演)2009

    • Author(s)
      永瀬雅夫
    • Organizer
      学振ナノプローブテクノロジー第167委員会・第53回研究会
    • Place of Presentation
      キャンパスプラザ京都、京都市
    • Year and Date
      2009-01-08
    • Related Report
      2008 Annual Research Report
  • [Presentation] Local conductane measurement of deformed double-layer graphene on atomic step-structures of SiC substrate2008

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
    • Organizer
      13th Advanced Heterostructures and Nanostructures Workshop (AHNW2008)
    • Place of Presentation
      Hapuna Beach Prince Hotel/Big Island of Hawaii/USA
    • Year and Date
      2008-12-10
    • Related Report
      2009 Final Research Report
  • [Presentation] Local conductane measurement of deformed double-layer graphene on atomic step-structures of SiC substrate2008

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
    • Organizer
      13th Advanced Heterostructures and Nanostructures Workshop (AHNW200)
    • Place of Presentation
      Hapuna Beach Prince Hotel, Big Island of Hawaii, USA
    • Year and Date
      2008-12-10
    • Related Report
      2008 Annual Research Report
  • [Presentation] Local conductance measurement of thermally grown graphene on SiC substrate2008

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
    • Organizer
      Int. Symp. on Graphene Devices 2008 (ISGD2008)
    • Place of Presentation
      Univ. of Aizu/ Aizuwakamatsu/ Japan
    • Year and Date
      2008-11-18
    • Related Report
      2009 Final Research Report
  • [Presentation] Local conductance measurement of thermally grown graphene on SiC substrate2008

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
    • Organizer
      International Symposium on Graphene Devices 2008 (ISGD2008)
    • Place of Presentation
      Univ, of Aizu, Aizuwakamatsu, Japan
    • Year and Date
      2008-11-18
    • Related Report
      2008 Annual Research Report
  • [Presentation] Theoretical study on epitaxial graphene formation on SiC(0001) surface2008

    • Author(s)
      H. Kageshima, H. Hibino, M. Nagase, H. Yamaguchi
    • Organizer
      Int. Symp. on Graphene Devices 2008 (ISGD2008)
    • Place of Presentation
      Univ. of Aizu/Aizuwakamatsu/ Japan
    • Year and Date
      2008-11-17
    • Related Report
      2009 Final Research Report
  • [Presentation] Evaluation of the number of graphene layers grown on SiC: SPM and RAMAN spectroscopy studies2008

    • Author(s)
      H. Hibino, M. Nagase, C. Jackson, H. Kageshima, Y. Kobayashi, H. Yamaguchi
    • Organizer
      Int. Symp. on Graphene Devices 2008 (ISGD2008)
    • Place of Presentation
      Univ. of Aizu/Aizuwakamatsu/ Japan
    • Year and Date
      2008-11-17
    • Related Report
      2009 Final Research Report
  • [Presentation] Evaluation of the number of graphene layers grown on SiC : SPM and RAMAN spectroscopy studies2008

    • Author(s)
      H. Hibino, M. Nagase, C. Jackson, H. Kageshima, Y. Kobayashi, H. Yamaguchi
    • Organizer
      International Symposium on Graphene Devices 2008 (ISGD2008)
    • Place of Presentation
      Univ. of Aizu, Aizuwakamatsu, Japan
    • Year and Date
      2008-11-17
    • Related Report
      2008 Annual Research Report
  • [Presentation] Theoretical study on epitaxial graphene formation on SiC(0001) surface2008

    • Author(s)
      H. Kageshima, H. Hibino, M. Nagase, H. Yamaguchi
    • Organizer
      International Symposium on Graphene Devices 2008 (ISGD2008)
    • Place of Presentation
      Univ. of Aizu, Aizuwakamatsu, Japan
    • Year and Date
      2008-11-17
    • Related Report
      2008 Annual Research Report
  • [Presentation] In-plane conductane images of few-layer graphene on SiC substrate2008

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
    • Organizer
      IEEE Nanotechnology Materials and Devices 2008 (NMDC2008)
    • Place of Presentation
      Kyoto Univ. /Kyoto/Japan
    • Year and Date
      2008-10-21
    • Related Report
      2009 Final Research Report
  • [Presentation] In-plane conductane images of few-layer graphene on SiC substrate2008

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
    • Organizer
      IEEE Nanotechnology Materials and Devices 2008 (NMDC2008)
    • Place of Presentation
      Kyoto Univ., Kyoto, Japan
    • Year and Date
      2008-10-21
    • Related Report
      2008 Annual Research Report
  • [Presentation] 二層グラフェン導電率へのSiC基板表面ステップ構造の影響2008

    • Author(s)
      永瀬雅夫, 日比野浩樹, 影島博之, 山口浩司
    • Organizer
      2008年(平成20年)秋季第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学/春日井市
    • Year and Date
      2008-09-03
    • Related Report
      2009 Final Research Report
  • [Presentation] 二層グラフェン導電率へのSiC基板表面ステップ構造の影響2008

    • Author(s)
      永瀬雅夫, 日比野浩樹, 影島博之, 山口浩司
    • Organizer
      2008年(平成20年)秋季 第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学, 春日井市
    • Year and Date
      2008-09-03
    • Related Report
      2008 Annual Research Report
  • [Presentation] Local Conductance of Graphene Near Buried Atomic Steps on SiC Substrate2008

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
    • Organizer
      Int. Conf. Nanoscience and Technol. 2008 (ICN+T2008)
    • Place of Presentation
      Keystone/CO/USA
    • Year and Date
      2008-07-22
    • Related Report
      2009 Final Research Report
  • [Presentation] Local Conductance of Graphene Near Buried Atomic Steps on SiC Substrate2008

    • Author(s)
      M. Nagase, H. Hibino, H. Kagoshima, H. Yamaguchi
    • Organizer
      Int. Conf. Nanoscience and Technol. 2008 (ICN+T2008)
    • Place of Presentation
      Keystone, CO, USA
    • Year and Date
      2008-07-22
    • Related Report
      2008 Annual Research Report
  • [Presentation] iC上のグラフェン成長と電気特性(招待講演)2008

    • Author(s)
      永瀬雅夫, 日比野浩樹, 影島博之, 山口浩司
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学理工学部船橋キャンパス
    • Year and Date
      2008-03-28
    • Related Report
      2009 Final Research Report
  • [Presentation] SiC上グラフェン 成長と電気特性[Invited]2008

    • Author(s)
      永瀬雅夫,日比野浩樹,影島博之,山口浩司
    • Organizer
      2008年春季 第55回応用物理学関係連合会講演会 薄膜・表面物理分科会企画シンポジウム
    • Place of Presentation
      日本大学理工学部 船橋キャンパス,船橋市
    • Year and Date
      2008-03-28
    • Related Report
      2007 Annual Research Report
  • [Book] グラフェンの機能と応用展望、一部(第11章SiC上のグラフェン成長と電気特性)の執筆を分担2009

    • Author(s)
      永瀬雅夫, 他、監修:斉木幸一朗、徳本洋志
    • Publisher
      シーエムシー出版
    • Related Report
      2009 Final Research Report
  • [Remarks]

    • URL

      http://www.brl.ntt.co.jp/people/nagase/

    • Related Report
      2009 Final Research Report
  • [Remarks] 日刊工業新聞、グラフェントランジスタ次世代素子実用化競う、[コメント掲載]、2009.12.7

    • Related Report
      2009 Final Research Report
  • [Remarks] 日本経済新聞、高機能の新炭素材料「グラフェン」、[コメント掲載]、2009.9.7

    • Related Report
      2009 Final Research Report
  • [Remarks] GAKKEN MOOK決定版ロケットと宇宙開発(2009.7) p.134、学研、グラフェンの画像(資料提供)

    • Related Report
      2009 Final Research Report
  • [Remarks] 日本経済新聞、サイエンス:宇宙旅行、エレベータで、[コメント掲載]、2009.7.12

    • Related Report
      2009 Final Research Report
  • [Remarks] 日刊工業新聞、CNTからグラフェンへ、[コメント掲載]2009.5.26

    • Related Report
      2009 Final Research Report
  • [Remarks] 化学と工業2008年12月号、日本化学会、カーボンナノチューブを越えるか新炭素系材料「グラフェン」、[取材記事]

    • Related Report
      2009 Final Research Report
  • [Remarks] 日刊工業新聞、炭素材料「グラフェン」に脚光、[取材記事] 2008.12.1

    • Related Report
      2009 Final Research Report
  • [Remarks]

    • URL

      http://www.brl.ntt.co.jp/people/nagase/

    • Related Report
      2009 Annual Research Report
  • [Remarks] 上記以外で個別報告(様式C-25)済み成果・取材記事“新炭素系材料「グラフェン」":日本化学学会誌「化学と工業」2008年12月号・取材記事“炭素材料「グラフェン」に脚光";日刊工業新聞2008.12.1研究代表者webページ

    • URL

      http://www.brl.ntt.co.jp/people/nagase/index-j.html

    • Related Report
      2008 Annual Research Report
  • [Patent(Industrial Property Rights)] グラフェントランジスタおよびその製造方法2010

    • Inventor(s)
      田邉真一、日比野浩樹、永瀬雅夫、関根佳明
    • Industrial Property Rights Holder
      日本電信電話株式会社
    • Industrial Property Number
      2010-037004
    • Filing Date
      2010-02-23
    • Related Report
      2009 Annual Research Report 2009 Final Research Report
  • [Patent(Industrial Property Rights)] 抵抗可変電子素子2008

    • Inventor(s)
      永瀬雅夫、日比野浩樹、影島博之、山口浩司
    • Industrial Property Rights Holder
      日本電信電話株式会社
    • Industrial Property Number
      2008-226923
    • Filing Date
      2008-09-04
    • Related Report
      2009 Final Research Report
  • [Patent(Industrial Property Rights)] 抵抗可変電子素子2008

    • Inventor(s)
      永瀬雅夫, 日比野浩樹, 影島博之, 山口浩司
    • Industrial Property Rights Holder
      日本電信電話(株)
    • Industrial Property Number
      2008-226923
    • Filing Date
      2008-09-04
    • Related Report
      2008 Annual Research Report

URL: 

Published: 2007-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi