Studies on single-electron devices and circuits based on silicon integrated circuit process

• Project/Area Number: 19310093
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Microdevices/Nanodevices
• Research Institution: Shizuoka University
• Principal Investigator: INOKAWA Hiroshi Shizuoka University, 電子工学研究所, 教授 (50393757)
• Co-Investigator(Kenkyū-buntansha): FUJIWARA Akira 日本電信電話(株), 物性科学基礎研究所, 主幹研究員 (70393759) ; NISHIGUCHI Katsuhiko 日本電信電話(株), 物性科学基礎研究所, 研究主任 (00393760)
• Project Period (FY): 2007 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥19,110,000 (Direct Cost: ¥14,700,000、Indirect Cost: ¥4,410,000); Fiscal Year 2009: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000); Fiscal Year 2008: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000); Fiscal Year 2007: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
• Keywords: 単量子デバイス / 少数電子素子 / 電子デバイス・機器 / 低消費電力 / 単電子デバイス / 単電子転送 / シリコン / 集積回路

Research Abstract

標準的なシリコン(Si)集積回路プロセスを用いて、ゲート電圧で誘起されたトンネルバリアを有する単電子デバイスを検討した。Si細線に2本のゲートが横切るタイプの単電子転送デバイスを中心に特性を調べ、容量パラメータの抽出法の提案、転送電流に重畳するノイズの解析、回路動作高速化の検討、種々の情報処理回路の動作実証などを行った。その結果、Si集積回路プロセスにより単電子デバイス・回路を構成し研究を進めて行く礎が築かれた。

Research Products

• [Journal Article] Low Frequency Noise Characterization in Metal-Oxide-Semiconductor Field-Effect Transistor Based Charge Transfer Device at Room and Low Temperatures (2010)
  • Author(s): Vipul Singh, Hiroshi Inokawa, Tetsuo Endoh, Hiroaki Satoh
  • Journal Title: Jpn. J. Appl. Phys Vol.49
  • NAID: 40017033730
  • Peer Reviewed
• [Journal Article] Fabrication of double-dot single-electron transistor in silicon nanowire (2010)
  • Author(s): Mingyu Jo, Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Yukinori Ono, Hiroshi Inokawa, Jung-Bum Choi, Yasuo Takahashi
  • Journal Title: Thin Solid Films Vol.518
  • NAID: 110007360126
  • Peer Reviewed
• [Journal Article] Low Frequency Noise Characterization in Metal-Oxide-Semiconductor Field-Effect Transistor Based Charge Transfer Device at Room and Low Temperatures (2010)
  • Author(s): Vipul Singh
  • Journal Title: Jpn.J.Appl.Phys. 49
  • Peer Reviewed
• [Journal Article] Fabrication of double-dot single-electron transistor in silicon nanowire (2010)
  • Author(s): Mingyu Jo
  • Journal Title: Thin Solid Films 518
  • Peer Reviewed
• [Journal Article] Analysis of Current Noise in MOSFET-Based Charge-Transfer Device (2009)
  • Author(s): Hiroshi Inokawa, Vipul Singh, Hiroaki Satoh
  • Journal Title: Journal of Automation, Mobile Robotics & Intelligent Systems Vol.3 Pages: 72-75
  • Peer Reviewed
• [Journal Article] Single-Electron Device With Si Nanodot Array and Multiple Input Gates (2009)
  • Author(s): Takuya Kaizawa, Masashi Arita, Akira Fujiwara, Kenji Yamazaki, Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi, Jung-Bum Choi
  • Journal Title: IEEE Trans. Nanotechnol Vol.8 Pages: 535-541
  • Peer Reviewed
• [Journal Article] Full Adder Operation Based on Si Nanodot Array Device with Multiple Inputs and Outputs (2009)
  • Author(s): Kaizawa Takuya, Jo Mingyu, Arita Masashi, Fujiwara Akira, Yamazaki Kenji, Ono Yukinori, Inokawa Hiroshi, Takahashi Yasuo, Choi Jung-Bum
  • Journal Title: International Journal of Nanotechnology and Molecular Computation Vol.1 Pages: 58-69
  • Peer Reviewed
• [Journal Article] Single-electron counting statistics and its circuit application in nanoscale field-effect transistors at room temperature (2009)
  • Author(s): K Nishiguchi, A Fujiwara
  • Journal Title: Nanotechnology Vol.20
  • Peer Reviewed
• [Journal Article] Analysis of Current Noise in MOSFET-Based Charge-Transfer Device (2009)
  • Author(s): Hiroshi Inokawa
  • Journal Title: Journal of Automation, Mobile Robotics & Intelligent Systems 3 Pages: 72-75
  • Peer Reviewed
• [Journal Article] Single-Electron Device With Si Nanodot Array and Multiple Input Gates (2009)
  • Author(s): Takuya Kaizawa
  • Journal Title: IEEE Trans.Nanotechnol. 8 Pages: 535-541
  • Peer Reviewed
• [Journal Article] Full Adder Operation Based on Si Nanodot Array Device with Multiple Inputs and Outputs (2009)
  • Author(s): Takuya Kaizawa
  • Journal Title: International Journal of Nanotechnology and Molecular Computation 1 Pages: 58-69
  • Peer Reviewed
• [Journal Article] (2009)
  • Author(s): Yasuo Takahashi
  • Journal Title: Device Applications of Silicon Nanocrystals and Nanostructures(Springer, New York) Pages: 125-172
• [Journal Article] Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metaloxide-semiconductor field-effect transistor (2008)
  • Author(s): Satoru Miyamoto, Katsuhiko Nishiguchi, Yukinori Ono, Kohei M. Itoh, Akira Fujiwara
  • Journal Title: Appl. Phys. Lett Vol.93
  • Peer Reviewed
• [Journal Article] Single-Electron-Resolution Electrometer Based on Field-Effect Transistor (2008)
  • Author(s): Katsuhiko Nishiguchi, Charlie Koechlin, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa, Hiroshi Yamaguchi
  • Journal Title: Jpn. J. Appl. Phys Vol.47 Pages: 8305-8310
  • NAID: 40016346937
  • Peer Reviewed
• [Journal Article] Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones (2008)
  • Author(s): Neil M. Zimmerman, William H. Huber, Brian Simonds, Emmanouel Hourdakis, Akira Fujiwara, Yukinori Ono, Yasuo Takahashi, Hiroshi Inokawa, Miha Furlan, Mark W. Keller
  • Journal Title: J. Appl. Phys Vol.104
  • Peer Reviewed
• [Journal Article] A gate-defined silicon quantum dot molecule (2008)
  • Author(s): Hongwu Liu, Toshimasa Fujisawa, Hiroshi Inokawa, Yukinori Ono, Akira Fujiwara, Yoshiro Hirayama
  • Journal Title: Appl. Phys. Lett Vol.92
  • Peer Reviewed
• [Journal Article] Direct Measurement of Capacitance Parameters in Nanometer-Scale MOSFETs (2008)
  • Author(s): Hiroshi Inokawa, Akira Fujiwara, Katsuhiko Nishiguchi, Yukinori Ono, Hiroaki Satoh
  • Journal Title: IEEJ Trans. EIS Vol.128 Pages: 905-911
  • NAID: 10021132673
  • Peer Reviewed
• [Journal Article] Pauli-spin-blockade transport through a silicon double quantum dot (2008)
  • Author(s): H.W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, Y. Hirayama
  • Journal Title: Phys. Rev. B Vol.77
  • Peer Reviewed
• [Journal Article] Stochastic data processing circuit based on single electrons using nanoscale field-effect transistors (2008)
  • Author(s): K. Nishiguchi, Y. Ono, A. Fujiwara, H. Inokawa, Y. Takahashi
  • Journal Title: Appl. Phys. Lett Vol.92
  • Peer Reviewed
• [Journal Article] Silicon singlecharge transfer devices (2008)
  • Author(s): Yukinori Ono, Akira Fujiwara, Katsuhiko Nishiguchi, Yasuo Takahashi, Hiroshi Inokawa
  • Journal Title: J. Phys. Chem. Solid Vol.69 Pages: 702-707
  • Peer Reviewed
• [Journal Article] Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor (2008)
  • Author(s): Akira Fujiwara, Katsuhiko Nishiguchi, Yukinori Ono
  • Journal Title: Appl. Phys. Lett Vol.92
  • Peer Reviewed
• [Journal Article] Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor (2008)
  • Author(s): Satoru Miyamoto
  • Journal Title: Appl.Phys.Lett. 93
  • Peer Reviewed
• [Journal Article] Single-Electron-Resolution Electrometer Based on Field-Effect Transistor (2008)
  • Author(s): Katsuhiko Nishiguchi
  • Journal Title: Jpn.J.Appl.Phys. 47 Pages: 8305-8310
  • Peer Reviewed
• [Journal Article] Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller(better)than in metal-based ones (2008)
  • Author(s): Neil M.Zimmerman
  • Journal Title: J.Appl.Phys. 104
  • Peer Reviewed
• [Journal Article] A gate-defined silicon quantum dot molecule (2008)
  • Author(s): Hongwu Liu
  • Journal Title: Appl.Phys.Lett. 92
  • Peer Reviewed
• [Journal Article] Direct Measurement of Capacitance Parameters in Nanometer-Scale MOSFETs (2008)
  • Author(s): Hiroshi Inokawa
  • Journal Title: IEEJ Trans.EIS 128 Pages: 905-911
  • NAID: 10021132673
  • Peer Reviewed
• [Journal Article] (2008)
  • Author(s): Yukinori Ono
  • Journal Title: Nanotechnology, Volume 4 : Information Technology II(Wiley-VCH, Weinheim) Pages: 45-68
• [Journal Article] Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor (2008)
  • Author(s): Akira Fujiwara
  • Journal Title: Appl.Phys.Lett. 92
  • Peer Reviewed
• [Journal Article] Stochastic data processing circuit based on single electrons using nanoscale field-effect transistors (2008)
  • Author(s): K. Nishiguchi
  • Journal Title: Appl.Phys.Lett. 92
  • Peer Reviewed
• [Journal Article] Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires (2007)
  • Author(s): Daniel Moraru, Yukinori Ono, Hiroshi Inokawa, Michiharu Tabe
  • Journal Title: Phys. Rev. B Vol.76
  • Peer Reviewed
• [Journal Article] Transfer and Detection of Single Electron using Metal-Oxide-Semiconductor Field-Effect-Transistor (2007)
  • Author(s): W.C. Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, N.J. Wu
  • Journal Title: IEICE Trans. Electron Vol.E90C Pages: 943-948
  • NAID: 110007519656
  • Peer Reviewed
• [Journal Article] Design of a Two-Bit-per-Cell Content-Addressable Memory Using Single-Electron Transistors (2007)
  • Author(s): K. Degawa, T. Aoki, T. Higuchi, H. Inokawa, Y. Takahashi
  • Journal Title: Journal of Multiple-Valued Logic and Soft Computing Vol.13 Pages: 249-266
  • Peer Reviewed
• [Journal Article] Transfer and Detection of Single Electron using Metal-Oxide-Semiconductor Field-Effect-Transistor (2007)
  • Author(s): W.C. Zhang
  • Journal Title: IEICE Trans.Electron. E90C Pages: 943-948
  • Peer Reviewed
• [Presentation] Fabrication of triple-dot single-electron transistor and its single-electron-transfer operation (2009)
  • Author(s): M.Jo
  • Organizer: International Symposium on Advanced Nanodevices and Nanotechnology
  • Place of Presentation: Kaanapali, Hawaii
  • Year and Date: 2009-11-29
• [Presentation] Unique Short-Channel Characteristics in Sub-100nm MOSFETs with Inversion-Layer Source/Drain (2009)
  • Author(s): Vipul Singh
  • Organizer: 22nd International Microprocesses and Nanotechnology Conference
  • Place of Presentation: Sapporo, Japan
  • Year and Date: 2009-11-16
• [Presentation] Low-Frequency Noise in MOSFET-Based Charge-Transfer Device (2009)
  • Author(s): Vipul Singh
  • Organizer: 2009 Int. Conf. Solid State Devices and Materials
  • Place of Presentation: Sendai, Japan
  • Year and Date: 2009-10-07
• [Presentation] Analysis of Current Noise in MOSFET-Based Charge-Transfer Device (2009)
  • Author(s): Hiroshi Inokawa
  • Organizer: The 8th International Conference on Global Research and Education
  • Place of Presentation: Kazimierz Dolny, Poland
  • Year and Date: 2009-09-14
• [Presentation] Novel-functional single-electron devices using silicon nanodot array (2009)
  • Author(s): Y.Takahashi
  • Organizer: 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: Busan, Korea
  • Year and Date: 2009-06-24
• [Presentation] Fabrication of double-dot single-electron transistor in silicon nanowire (2009)
  • Author(s): M.Jo
  • Organizer: 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: Busan, Korea
  • Year and Date: 2009-06-24
• [Presentation] Fabrication of Coupled-Dot Single-Electron Transistor in Silicon Nanowire (2009)
  • Author(s): M.Jo
  • Organizer: 2009 IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2009-06-13
• [Presentation] Double-dot single-electron transistor fabricated in silicon nanowire (2009)
  • Author(s): M.Jo
  • Organizer: 6th International Conference on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Los Angeles, USA
  • Year and Date: 2009-05-17
• [Presentation] Unique Short-Channel Characteristics in Sub-100 nm MOSFETs with Inversion-Layer Source/Drain (2009)
  • Author(s): Vipul Singh, Hiroshi Inokawa, Hiroaki Satoh
  • Organizer: 22nd International Microprocesses and Nanotechnology Conference
  • Place of Presentation: Sapporo(508-509)
• [Presentation] Low-Frequency Noise in MOSFET-Based Charge-Transfer Device (2009)
  • Author(s): Vipul Singh, Hiroshi Inokawa, Hiroaki Satoh
  • Organizer: 2009 Int. Conf. Solid State Devices and Materials
  • Place of Presentation: Sendai(587-588)
• [Presentation] Fabrication of triple-dot single-electron transistor and its single-electron- transfer operation (2009)
  • Author(s): M. Jo, Y. Kato, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi, J. -B. Choi
  • Organizer: International Symposium on Advanced Nanodevices and Nanotechnology
  • Place of Presentation: Kaanapali, Hawaii
• [Presentation] Analysis of Current Noise in MOSFET-Based Charge-Transfer Device (2009)
  • Author(s): Hiroshi Inokawa, Vipul Singh, Hiroaki Satoh
  • Organizer: The 8th International Conference on Global Research and Education
  • Place of Presentation: Kazimierz Dolny & Warsaw, Poland(411- 416)
• [Presentation] Novel-functional single-electron device using nanodot array with multiple outputs (2009)
  • Author(s): Yasuo Takahashi
  • Organizer: 2009 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices"
  • Place of Presentation: Sapporo, Japan
• [Presentation] Single-Dopant Effect in Si MOSFETs (2008)
  • Author(s): Y. Ono, M.A.H. Khalafalla, A. Fujiwara, K. Nishiguchi, K. Takashina, S. Horiguchi, Y. Takahashi, H. Inokawa
  • Organizer: The IEEE Nanotechnology Materials and Devices Conference
  • Place of Presentation: Kyoto
• [Presentation] Escape dynamics of electrons in a single-electron ratchet using silicon nanowire MOSFETs (2008)
  • Author(s): Satoru Miyamoto, Katsuhiko Nishiguchi, Yukinori Ono, Kohei M. Itoh, Akira Fujiwara
  • Organizer: The IEEE Nanotechnology Materials and Devices Conference
  • Place of Presentation: Kyoto
• [Presentation] Novel-Functional Single-Electron Device Using Nanodot Array with Multiple Inputs and Outputs (2008)
  • Author(s): Yasuo Takahashi
  • Organizer: The International Union of Materials Research Societies-International Conference in Asia(IUMRS-ICS)
  • Place of Presentation: Nagoya, Japan
• [Presentation] Escape dynamics of electrons in a single-electron ratchet using silicon nanowire MOSFETs (2008)
  • Author(s): Satoru Miyamoto
  • Organizer: The IEEE Nanotechnology Materials and Devices Conference(NMDC)
  • Place of Presentation: Kyoto, Japan
• [Presentation] Single-Dopant Effect in Si MOSFETs (2008)
  • Author(s): Yukinori Ono
  • Organizer: The IEEE Nanotechnology Materials and Devices Conference(NMDC)
  • Place of Presentation: Kyoto, Japan
• [Presentation] A Simple Test Structure for Extracting Capacitances in Nanometer-Scale MOSFETs (2007)
  • Author(s): H. Inokawa, A. Fujiwara, K. Nishiguchi, Y. Ono, H. Satoh
  • Organizer: The 6th International Conference on Global Research and Education
  • Place of Presentation: Hamamatsu
• [Presentation] Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors (2007)
  • Author(s): Hiroshi Inokawa, Akira Fujiwara, Katsuhiko Nishiguchi, Yukinori Ono
  • Organizer: 2007 Int. Conf. Solid State Devices and Materials
  • Place of Presentation: Tsukuba
• [Presentation] Nanoampere charge pumping by single-electron ratchet using Si nanowire MOSFETs (2007)
  • Author(s): Akira Fujiwara, Katsuhiko Nishiguchi, Yukinori Ono
  • Organizer: 2007 Int. Conf. Solid State Devices and Materials
  • Place of Presentation: Tsukuba
• [Presentation] Room-temperatureoperating single-electron devices using silicon nanowire MOSFET (2007)
  • Author(s): Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa, Yasuo Takahashi
  • Organizer: 2007 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices
  • Place of Presentation: Gyeongju, Korea
• [Presentation] A Simple Test Structure for Extracting Capacitances in Nanometer-Scale MOSFETs (2007)
  • Author(s): H. Inokawa
  • Organizer: The 6th International Conference on Global Research and Education (Inter-Academia 2007)
  • Place of Presentation: Hamamatsu,Japan
• [Presentation] Nanoampere charge pumping by single-electron ratchet using Si nanowire MOSFETs (2007)
  • Author(s): Akira Fujiwara
  • Organizer: Int.Conf.Solid State Devices and Materials (SSDM)
  • Place of Presentation: Tsukuba,Japan
• [Presentation] Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors (2007)
  • Author(s): Hiroshi Inokawa
  • Organizer: Int.Conf.Solid State Devices and Materials (SSDM)
  • Place of Presentation: Tsukuba,Japan
• [Presentation] Room-temperature-operating single-electron devices using silicon nanowire MOSFET (2007)
  • Author(s): Katsuhiko Nishiguchi
  • Organizer: 2007Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD)
  • Place of Presentation: Gyeongju,Korea
• [Book] "Silicon Single-Electron Devices, " in Device Applications of Silicon Nanocrystals and Nanostructures Koshida, Nobuyoshi (ed.) (2009)
  • Author(s): Yasuo Takahashi, Yukinori Ono, Akira Fujiwara, Katsuhiko Nishiguchi, Hiroshi Inokawa
  • Publisher: Springer
• [Book] "Single-Electron Transistor and its Logic Application" in Nanotechnology (2008)
  • Author(s): Yukinori Ono, Hiroshi Inokawa, Yasuo Takahashi, Katsuhiko Nishiguchi, Akira Fujiwara
  • Publisher: Wiley-VCH
• [Remarks]
  • URL: http://www.rie.shizuoka.ac.jp/~nanosys/
• [Remarks]
  • URL: http://www.rie.shizuoka.ac.jp/~nanosys/
• [Remarks]
  • URL: http://www.rie.shizuoka.ac.jp~nanosys/
• [Remarks]
  • URL: http://www.rie.shizuoka.ac.jp/~nanosys/