Non-equilibrium phases appearing on semiconductor surfaces at low temperatures induced by electronic excitation

• Project/Area Number: 19340083
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Condensed matter physics I
• Research Institution: Kyushu University
• Principal Investigator: TOCHIHARA Hiroshi Kyushu University, 大学院・総合理工学研究院, 教授 (80080472)
• Co-Investigator(Kenkyū-buntansha): TAKAHASHI Toshio 東京大学, 物性研究所, 教授 (20107395) ; SHIRASAWA Tetsuroh 東京大学, 物性研究所, 助教 (80451889)
• Project Period (FY): 2007 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000); Fiscal Year 2009: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2008: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000); Fiscal Year 2007: ¥12,610,000 (Direct Cost: ¥9,700,000、Indirect Cost: ¥2,910,000)
• Keywords: Ge(111)表面 / Sn吸着 / 表面構造 / 半導体表面 / 電子線照射効果 / 低速電子回折 / 相転移 / 低温 / 表面構造相転移 / 半導体表面物性 / 非平衡物質 / Sn 吸着 / シリコン / 電子励起と脱励起 / ドーパント / 半導体キャリアー濃度 / 低温半導体 / LEED

Research Abstract

Just before starting the present study (2005), we had found that the structure of clean Si(001)c(4×2) surfaces undergoes the disordering induced by the irradiation of low-energy electron beam only below about 50K. In this study we have succeeded to find another example of electron-beam-irradiation induced disordering of the surface structure on the Ge(111)-Sn adsorption system only below 40K. We have clarified the conditions for the occurrence of this phenomenon, and proposed its microscopic mechanism.

Research Products

• [Journal Article] The Ground State of the Sn/Ge(111)-3×3 Surface and its Electron-Beam-Induced Disordering. (2010)
  • Author(s): T. Shirasawa, H. Tochihara, K. Kubo, W. Voegeli, T. Takahashi
  • Journal Title: Phys. Rev. B81
  • Peer Reviewed
• [Journal Article] The Ground State of the Sn/Ge(111)-3×3 Surface and its Electron-Beam-Induced Disordering. (2010)
  • Author(s): T.Shirasawa, H.Tochihara, K.Kubo, W.Voegeli, T.Takahashi
  • Journal Title: Physical Review B(Rapid Communications) 81
  • Peer Reviewed
• [Presentation] 電子線照射によるSn/Ge(111)-3 3表面構造の変化 (2009)
  • Author(s): 白澤徹郎, 栃原浩, 高橋敏男
  • Organizer: 日本物理学会2009年秋季大会
  • Place of Presentation: 熊本大学
  • Year and Date: 2009-09-25
• [Presentation] 電子線照射によるSn/Ge(111)-3×3表面構造の変化 (2009)
  • Author(s): 白澤徹郎, 栃原浩, 高橋敏男
  • Organizer: 日本物理学会2009年秋季大会
  • Place of Presentation: 熊本大学
  • Year and Date: 2009-09-25
• [Presentation] Electron-beam-induced disordering of the Sn/Ge(111)-3 3 structure (2009)
  • Author(s): Tetsuroh Shirasawa, Hiroshi Tochihara, Toshio Takahashi
  • Organizer: 26th European Conference on Surface Science
  • Place of Presentation: パルマ(イタリア)
  • Year and Date: 2009-09-02
• [Presentation] Electron-beam-induced disordering of the Sn/Ge(111)-3×3 structure (2009)
  • Author(s): Tetsuroh Shirasawa, Hiroshi Tochihara, Toshio Takahashi
  • Organizer: 26th European Conference on Surface Science
  • Place of Presentation: Parma, Italy
  • Year and Date: 2009-09-02
• [Presentation] Sn/Ge(111)及びSn/Si(111)低温相のLEEDによる検証 (2009)
  • Author(s): 久保公孝、白澤徹郎、高橋敏男
  • Organizer: 日本物理学会第64回年次大会
  • Place of Presentation: 立教大学
  • Year and Date: 2009-03-29