| Project/Area Number |
19340094
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Condensed matter physics II
|
|---|
| Research Institution | The University of Tokyo |
|---|
Principal Investigator |
LIPPMAA Mikk The University of Tokyo, 物性研究所, 准教授 (10334343)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
大西 剛 東京大学, 物性研究所, 助教 (80345230)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
OHNISHI Tsuyoshi 物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, MANA 研究者 (80345230)
|
|---|
| Project Period (FY) |
2007 – 2008
|
| Project Status |
Completed (Fiscal Year 2008)
|
| Budget Amount *help |
¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
Fiscal Year 2008: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000)
Fiscal Year 2007: ¥10,530,000 (Direct Cost: ¥8,100,000、Indirect Cost: ¥2,430,000)
|
|---|
| Keywords | 電子デバイス・機器 / ナノ材料 / 表面・界面物性 / 物性実験 / マイクロ・デバイス / MBE,エピタキシャル |
|---|
| Research Abstract |
We have developed a process for fabricating micron-scale fully epitaxial top-gate oxide field-effect transistors that use an oxide channel, oxide source and drain electrodes and a wide-gap oxide gate insulator. We have studied charge accumulation at CaHfO_3/SrTiO_3, DyScO_3/SrTiO_3, and SrTiO_3/LaTiO_3 interfaces. As a way to confine carriers in a narrower layer at an interface, we are developing Ruddlesden-Popper-type two-dimensionalquantum wells
|
