Field-effect phase transitions in nanoscale oxides
| Project/Area Number |
19340094
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Condensed matter physics II
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| Research Institution | The University of Tokyo |
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Principal Investigator |
LIPPMAA Mikk The University of Tokyo, 物性研究所, 准教授 (10334343)
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| Co-Investigator(Kenkyū-buntansha) |
大西 剛 東京大学, 物性研究所, 助教 (80345230)
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| Co-Investigator(Renkei-kenkyūsha) |
OHNISHI Tsuyoshi 物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, MANA 研究者 (80345230)
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| Project Period (FY) |
2007 – 2008
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| Project Status |
Completed (Fiscal Year 2008)
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| Budget Amount *help |
¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
Fiscal Year 2008: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000)
Fiscal Year 2007: ¥10,530,000 (Direct Cost: ¥8,100,000、Indirect Cost: ¥2,430,000)
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| Keywords | 電子デバイス・機器 / ナノ材料 / 表面・界面物性 / 物性実験 / マイクロ・デバイス / MBE,エピタキシャル |
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| Research Abstract |
We have developed a process for fabricating micron-scale fully epitaxial top-gate oxide field-effect transistors that use an oxide channel, oxide source and drain electrodes and a wide-gap oxide gate insulator. We have studied charge accumulation at CaHfO_3/SrTiO_3, DyScO_3/SrTiO_3, and SrTiO_3/LaTiO_3 interfaces. As a way to confine carriers in a narrower layer at an interface, we are developing Ruddlesden-Popper-type two-dimensionalquantum wells
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Report
(3 results)
Research Products
(79 results)
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[Presentation] SrTiO3 の発光2008
Author(s)
大西剛, 望月圭介, 山本博文, 藤本英司, 角谷正友, Mikk Lippmaa
Organizer
第55回応用物理学関係連合講演会
Place of Presentation
日本大学
Related Report
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[Book]2007
Author(s)
B. Posadas, M. Lippmaa, F. J. Walker, M. Dawber, C. H. Ahn, J.-M. Triscone
Publisher
Growth and novel applications of epitaxial oxide thin films
Related Report
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