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Growth and material applications of narrow-bandgap III-V-N alloy semiconductor quantum nano-structures

Research Project

Project/Area Number 19360003
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionThe University of Tokyo

Principal Investigator

ONABE Kentaro  The University of Tokyo, 大学院・新領域創成科学研究科, 教授 (50204227)

Co-Investigator(Kenkyū-buntansha) KATAYAMA Ryuji  東北大学, 金属材料研究所, 准教授 (40343115)
YAMAMOTO Takahisa  東京大学, 大学院・新領域創成科学研究科, 准教授 (20220478)
YAGUCHI Hiroyuki  埼玉大学, 大学院・理工学研究科, 教授 (50239737)
Project Period (FY) 2007 – 2009
Project Status Completed (Fiscal Year 2009)
Budget Amount *help
¥18,720,000 (Direct Cost: ¥14,400,000、Indirect Cost: ¥4,320,000)
Fiscal Year 2009: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2008: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2007: ¥13,650,000 (Direct Cost: ¥10,500,000、Indirect Cost: ¥3,150,000)
Keywordsエピタキシャル成長 / 希薄窒化物半導体 / III-V-N混晶 / 量子ナノ構造 / 量子ドット / InGaAsN / ジメチルヒドラジン / 自己形成量子ドット / 希薄窒化物
Research Abstract

In-containing III-V-N type alloy semiconductors, such as InAsN, InGaAsN, InGaPN and InPN, have been grown by MOVPE in the form of thin films or quantum dots. The growth characteristics and material properties, such as bandgap reduction and luminescence, have been clarified in relation with the N incorporation. In particular, room-temperature photoluminescence of 1.2μm wavelength has been realized with the InAsN quantum dots. A novel potential of III-V-N type alloy semiconductors for useful applications has been demonstrated with this study.

Report

(4 results)
  • 2009 Annual Research Report   Final Research Report ( PDF )
  • 2008 Annual Research Report
  • 2007 Annual Research Report
  • Research Products

    (63 results)

All 2010 2009 2008 2007 Other

All Journal Article (17 results) (of which Peer Reviewed: 17 results) Presentation (42 results) Remarks (4 results)

  • [Journal Article] Metastable cubic InN layers on GaAs (001) substrates grown by MBE : Growth condition and crystal structure2009

    • Author(s)
      S. Sanorpim, P. Jantawongrit, S. Kuntharin, C. Thanachayanont, T. Nakamura, R. Katavama, K. Onabe
    • Journal Title

      physica status solidi (c) Vol. 6

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] MOVPE growth of InN films using 1, 1-dimethylhydrazine as a nitrogen precursor2009

    • Author(s)
      Q. T. Thieu, Y. Seki, S. Kuboya, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth Vol. 311

      Pages: 2802-2805

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Metastable cubic InN layers on GaAs(001)substrates grown by MBE : Growth condition and crystal structure2009

    • Author(s)
      S.Sanorpim, P.Jantawongrit, S.Kuntharin, C.Thanachayanont, T.Nakamura, R.Katayama, K.Onabe
    • Journal Title

      physica status solidi(c) 6

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] MOVPE Growth of InN films Using 1,1-Dimethylhydrazine as a Nitrogen2009

    • Author(s)
      Q.T.Thieu, Y.Seki, S.Kuboya, R.Katayama, K.Onabe
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2802-2805

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] MOVPE growth and photoluminescence properties of InAsN QDs2008

    • Author(s)
      S. Kuboya, S. Takahashi, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      physica status solidi (c) Vol. 5

      Pages: 1715-1718

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effect of substrate-surface orientation on the N incorporation in GaAsN films on GaAs grown by MOVPE2008

    • Author(s)
      P. Klangtakai, S. Sanorpim, S. Kuboya, R. Katayama, K. Onabe
    • Journal Title

      Advanced Materials Research Vol. 55-57

      Pages: 825-828

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Incorporation of N in high N-content GaAsN films investigated by Raman scattering2008

    • Author(s)
      S. Sanorpim, P. Panpech, S. Vijarnwannaluk, F. Nakajima, S. Kuboya, R. Katayama, K. Onabe
    • Journal Title

      physica status solidi (c) Vol. 5

      Pages: 2923-2925

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] MOVPE and characterization of InAsN/GaAs multiple quantum wells2007

    • Author(s)
      S. Kuboya, Q. T. Thieu, W. Ono, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth Vol. 298

      Pages: 544-547

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy2007

    • Author(s)
      P. Kongjaeng, S. Sanorpim, T. Yamamoto, W. Ono, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth Vol. 298

      Pages: 111-115

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxy2007

    • Author(s)
      S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth Vol. 298

      Pages: 150-153

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Photoluminescence and photoluminescence-excitation spectro-scopy of InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE2007

    • Author(s)
      D. Kaewket, S. Tungasmita, S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth Vol. 298

      Pages: 531-535

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] InAsN quantum dots grown on GaAs(001) substrates by MOVPE2007

    • Author(s)
      S. Kuboya, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      physica status solidi (c) Vol. 4

      Pages: 2387-2390

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] MOVPE and characterization of InAsN/GaAs multiple quantum wells2007

    • Author(s)
      S. Kuboya, Q. T. Thieu, W. Ono, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 544-547

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy2007

    • Author(s)
      P. Kongjaeng, S. Sanorpim, T. Yamamoto, W. Ono, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 111-115

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxy2007

    • Author(s)
      S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 150-153

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Photoluminescence and photoluminescence-excitation spectroscopy of InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE2007

    • Author(s)
      D. Kaewket, S. Tungasmita, S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 531-535

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] InAsN quantum dots grown on GaAs(001) substrates by MOVPE2007

    • Author(s)
      S. Kuboya, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      physica status solidi (c) 4

      Pages: 2387-2390

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Presentation] InP(001)基板上へのInPN薄膜のMOVPE成長2010

    • Author(s)
      関裕紀, 王彦哲, ティユ クァントゥ, 窪谷茂幸, サクンタム サノーピン, 尾鍋研太郎
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (神奈川)
    • Year and Date
      2010-03-18
    • Related Report
      2009 Final Research Report
  • [Presentation] Ge(001)基板上へのInGaAsN薄膜のMOVPE成長2010

    • Author(s)
      菊地健彦, ティユ クァントゥ, 加藤宏盟, 窪谷茂幸, サクンタム サノーピン, 尾鍋研太郎
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (神奈川)
    • Year and Date
      2010-03-18
    • Related Report
      2009 Final Research Report
  • [Presentation] InP(001)基板上へのInPN薄膜のMOVPE成長2010

    • Author(s)
      関裕紀, 王彦哲, ティユクァントゥ, 窪谷茂幸, サクンタムサノーピン, 尾鍋研太郎
    • Organizer
      2010年春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] Ge(001)基板上へのInGaAsN薄膜のMOVPE成長2010

    • Author(s)
      菊地健彦, ティユクァントゥ, 加藤宏盟, 窪谷茂幸, サクンタムサノーピン, 尾鍋研太郎
    • Organizer
      2010年春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-18
    • Related Report
      2009 Annual Research Report
  • [Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長 (4)2010

    • Author(s)
      テイユクァントウ, 立川卓, 菊地健彦, 関裕紀, 窪谷茂幸, 尾鍋研太郎
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (神奈川)
    • Year and Date
      2010-03-17
    • Related Report
      2009 Final Research Report
  • [Presentation] RF-MBE法によるYSZ(001)基板上立方晶InN及びInGaNの結晶成長2010

    • Author(s)
      中村桂土, 角田雅弘, 石田崇, 窪谷茂幸, 片山竜二, 尾鍋研太郎
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (神奈川)
    • Year and Date
      2010-03-17
    • Related Report
      2009 Final Research Report
  • [Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長(4)2010

    • Author(s)
      ティユクァントウ、立川卓、菊地健彦、関裕紀、窪谷茂幸、尾鍋研太郎
    • Organizer
      2010年春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-17
    • Related Report
      2009 Annual Research Report
  • [Presentation] RF-MBE法によるYSZ(001)基板上立方晶InN及びInGaNの結晶成長2010

    • Author(s)
      中村桂土、角田雅弘、石田崇、窪谷茂幸、片山竜二、尾鍋研太郎
    • Organizer
      2010年春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-17
    • Related Report
      2009 Annual Research Report
  • [Presentation] MOVPE Growth of High Optical Quality InGaPN Layers on GaAs (001) Substrates2009

    • Author(s)
      D. Kaewket, S. Sanorpim, S. Tungasmita, R. Katayama, K. Onabe
    • Organizer
      8th International Conference on Nitride Semiconductors (ICNS-8)
    • Place of Presentation
      Jeju, Korea.
    • Year and Date
      2009-10-22
    • Related Report
      2009 Final Research Report
  • [Presentation] MOVPE Growth of High Optical Quality InGaPN Layers on GaAs(001)Substrates2009

    • Author(s)
      D.Kaewket, S.Sanorpim, S.Tungasmita, R.Katayama, K.Onabe
    • Organizer
      8th International Conference on Nitride Semiconductors(ICNS-8)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-22
    • Related Report
      2009 Annual Research Report
  • [Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009

    • Author(s)
      Q. T. Thieu, T. Nakagawa, Y. Seki, S. Kuboya, R. Katayama, K. Onabe
    • Organizer
      8th International Conference on Nitride Semiconductors (ICNS-8)
    • Place of Presentation
      Jeju, Korea.
    • Year and Date
      2009-10-20
    • Related Report
      2009 Final Research Report
  • [Presentation] Movpe Growth and Optical Characterization of InGaAsN T-shaped Quantum Wires Lattice-Matched to GaAs2009

    • Author(s)
      P. Klangtakai, S. Sanorpim, R. Katayama, K. Onabe
    • Organizer
      8th International Conference on Nitride Semiconductors (ICNS-8)
    • Place of Presentation
      Jeju, Korea.
    • Year and Date
      2009-10-20
    • Related Report
      2009 Final Research Report
  • [Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009

    • Author(s)
      Q.T.Thieu, T.Nakagawa, Y.Seki, S.Kuboya, R.Katayama, K.Onabe
    • Organizer
      8th International Conference on Nitride Semiconductors(ICNS-8)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-20
    • Related Report
      2009 Annual Research Report
  • [Presentation] Movpe Growth and Optical Characterization of InGaAsN T-shaped Quantum Wires Lattice-Matched to GaAs2009

    • Author(s)
      P.Klangtakail, S.Sanorpim, R.Katayama, K.Onabe
    • Organizer
      8th International Conference on Nitride Semiconductors(ICNS-8)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-20
    • Related Report
      2009 Annual Research Report
  • [Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長 (3)2009

    • Author(s)
      テイユクァントウ, 中川隆, 関裕紀, 窪谷茂幸, 片山竜二, 尾鍋研太郎
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学 (富山)
    • Year and Date
      2009-09-10
    • Related Report
      2009 Final Research Report
  • [Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長(3)2009

    • Author(s)
      ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
    • Organizer
      2009年秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Related Report
      2009 Annual Research Report
  • [Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009

    • Author(s)
      Q. T. Thieu, T. Nakagawa, Y. Seki, S. Kuboya, R. Katayama, K. Onabe
    • Organizer
      28th Electronic Materials Symposium (EMS28)
    • Place of Presentation
      Biwako, Japan.
    • Year and Date
      2009-07-08
    • Related Report
      2009 Final Research Report
  • [Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009

    • Author(s)
      Q.T.Thieu, T.Nakagawa, Y.Seki, S.Kuboya, R.Katayama, K.Onabe
    • Organizer
      28th Electronic Materials Symposium(EMS28)
    • Place of Presentation
      Biwako, Japan
    • Year and Date
      2009-07-08
    • Related Report
      2009 Annual Research Report
  • [Presentation] InP(001)基板上へのInPN薄膜のMOVPE成長2009

    • Author(s)
      関裕紀, 窪谷茂幸, ティユクァントゥ, 片山竜二, 矢口裕之, 尾鍋研太郎
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学 (茨城)
    • Year and Date
      2009-03-31
    • Related Report
      2009 Final Research Report
  • [Presentation] InP(001)板上へのInPN薄膜のMOVPE成長2009

    • Author(s)
      関裕紀,窪谷茂幸,ティユクァントゥ,片山竜二,矢口裕之,尾鍋研太郎
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-31
    • Related Report
      2008 Annual Research Report
  • [Presentation] InAsN薄膜の光学的特性2008

    • Author(s)
      窪谷茂幸, 黒田正行, 西尾晋, ティユクァントゥ, 片山竜二, 尾鍋研太郎
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部工業大学 (愛知)
    • Year and Date
      2008-09-03
    • Related Report
      2009 Final Research Report
  • [Presentation] InAsN薄膜の光学的特性2008

    • Author(s)
      窪谷茂幸,黒田正行,西尾晋,ティユクァントゥ,片山竜二,尾鍋研太郎
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部工業大学
    • Year and Date
      2008-09-03
    • Related Report
      2008 Annual Research Report
  • [Presentation] MOVPE growth of GaAsN and InAsN films by using N_2 carrier gas2008

    • Author(s)
      S. Kuboya, H. Kato, Q. T. Thieu, R. Katavama, K. Onabe
    • Organizer
      27th Electronic Materials Symposium (EMS-27)
    • Place of Presentation
      修善寺 (静岡)
    • Year and Date
      2008-07-10
    • Related Report
      2009 Final Research Report
  • [Presentation] MOVPE growth of GaAsN and InAsN films by using N2 carrier gas2008

    • Author(s)
      S. Kuboya, H. Kato, Q. T. Thieu, R. Katayama and K. Onabe
    • Organizer
      28th Electronic Materials Symposium (EMS28)
    • Place of Presentation
      Shuzenji, Japan
    • Year and Date
      2008-07-10
    • Related Report
      2008 Annual Research Report
  • [Presentation] MOVPE growth of GaAsN and InAsN films by using N_2 carrier gas2008

    • Author(s)
      S. Kuboya, H. Kato, Q. T. Thieu, R. Katayama, K. Onabe
    • Organizer
      27th Electronic Materials Symposium (EMS-27)
    • Place of Presentation
      修善寺(静岡)
    • Year and Date
      2008-07-10
    • Related Report
      2007 Annual Research Report
  • [Presentation] MOVPE growth properties of high quality InAsN films2008

    • Author(s)
      S. Kuboya, Q. T. Thieu, H. Kato, F. Nakajima, R. Katayama, K. Onabe
    • Organizer
      14th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV)
    • Place of Presentation
      Metz, France.
    • Year and Date
      2008-06-04
    • Related Report
      2009 Final Research Report
  • [Presentation] Compositional pulling effect in MOVPE growth of InGaAsN films on bulk InGaAs substrate2008

    • Author(s)
      S. Sanorpim, R. Katavama, S. Kuboya, K. Onabe
    • Organizer
      14th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV)
    • Place of Presentation
      Metz, France.
    • Year and Date
      2008-06-04
    • Related Report
      2009 Final Research Report
  • [Presentation] MOVPE growth properties of high quahty InAsN films2008

    • Author(s)
      S. Kuboya, Q. T. Thieu, H. Kato, F. Nakajhna, R. Katayama, K. Onabe
    • Organizer
      14th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE・XIV)
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-04
    • Related Report
      2008 Annual Research Report
  • [Presentation] Composition pulling effect in MOVPE growth of InGaAsN films on bulk InGaAs substrate2008

    • Author(s)
      S. Sanorpim, R. Katayama, S. Kuboya, K. Onabe
    • Organizer
      14th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE・XIV)
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-04
    • Related Report
      2008 Annual Research Report
  • [Presentation] MOVPE growth properties of high quality InAsN films2008

    • Author(s)
      S. Kuboya, Q. T. Thieu, H. Kato, F. Nakajima, R. Katayama, K. Onabe
    • Organizer
      14th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV)
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-04
    • Related Report
      2007 Annual Research Report
  • [Presentation] Compositional pulling effect in MOVPE growth of InGaAsN films on bulk InGaAs substrate2008

    • Author(s)
      S. Sanorpim, R. Katayama, S. Kuboya, K. Onabe
    • Organizer
      14th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV)
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-04
    • Related Report
      2007 Annual Research Report
  • [Presentation] GaAsN及びInAsN薄膜の水素・窒素混合キャリアガスを用いたMOVPE成長2008

    • Author(s)
      窪谷茂幸, 加藤宏盟, ティユクァントゥ, 片山竜二, 尾鍋研太郎
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学 (千葉)
    • Year and Date
      2008-03-29
    • Related Report
      2009 Final Research Report
  • [Presentation] ラマン分光を用いたGaInAsN混晶の発光効率の変化に関する研究2008

    • Author(s)
      谷岡健太郎, 堀口歩, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学 (千葉)
    • Year and Date
      2008-03-29
    • Related Report
      2009 Final Research Report
  • [Presentation] ラマン分光を用いたGaInAsN混晶の発光効率の変化に関する研究2008

    • Author(s)
      谷岡健太郎, 堀口歩, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
    • Organizer
      2008年春季 第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学(千葉)
    • Year and Date
      2008-03-29
    • Related Report
      2007 Annual Research Report
  • [Presentation] InAsN quantum dots grown by MOVPE2008

    • Author(s)
      S. Kuboya, Q. T. Thieu, S. Takahashi, F. Nakajima, R. Katavama, K. Onabe
    • Organizer
      Workshop on Frontier Optoelectronic Materials and Devices
    • Place of Presentation
      箱根 (神奈川)
    • Year and Date
      2008-03-05
    • Related Report
      2009 Final Research Report
  • [Presentation] InAsN quantum dots grown by MOVPE2008

    • Author(s)
      S. Kuboya, Q. T. Thieu, S. Takahashi, F. Nakajima, R. Katayama, K. Onabe
    • Organizer
      Workshop on Frontier Optoelectronic Materials and Devices
    • Place of Presentation
      箱根(神奈川)
    • Year and Date
      2008-03-05
    • Related Report
      2007 Annual Research Report
  • [Presentation] MOVPE growth and photoluminescence properties of InAsN quantum dots2007

    • Author(s)
      S. Kuboya, S. Takahashi, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
    • Organizer
      7th International Conference on Nitride Semiconductors (ICNS-7)
    • Place of Presentation
      Las Vegas, USA.
    • Year and Date
      2007-09-19
    • Related Report
      2009 Final Research Report
  • [Presentation] MOVPE growth and photoluminescence properties of InAsN quantum dots2007

    • Author(s)
      S. Kuboya, S. Takahashi, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
    • Organizer
      7th International Conference on Nitride Semiconductors (ICNS-7)
    • Place of Presentation
      Las Vegas, USA
    • Year and Date
      2007-09-19
    • Related Report
      2007 Annual Research Report
  • [Presentation] 光照射によるGaInAsN混晶の発光効率向上に関する研究2007

    • Author(s)
      谷岡健太郎, 遠藤雄太, 伊藤正俊, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
    • Organizer
      2007年秋季第68回応用物理学学術講演会
    • Place of Presentation
      北海道工業大学 (北海道)
    • Year and Date
      2007-09-07
    • Related Report
      2009 Final Research Report
  • [Presentation] 光照射によるGaInAsN混晶の発光効率向上に関する研究2007

    • Author(s)
      谷岡健太郎, 遠藤雄太, 伊藤正俊, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
    • Organizer
      2007年秋季 第68回応用物理学学術講演会
    • Place of Presentation
      北海道工業大学(北海道)
    • Year and Date
      2007-09-07
    • Related Report
      2007 Annual Research Report
  • [Presentation] Photoluminescence properties of InAsN QDs grown by MOVPE2007

    • Author(s)
      S. Kuboya, Q. T. Thieu, S. Takahashi, F. Nakajima, R. Katayama, K. Onabe
    • Organizer
      26th Electronic Materials Symposium (EMS-26)
    • Place of Presentation
      琵琶湖 (滋賀)
    • Year and Date
      2007-07-04
    • Related Report
      2009 Final Research Report
  • [Presentation] Photoluminescence properties of InAsN QDs grown by MOVPE2007

    • Author(s)
      S. Kuboya, Q. T. Thieu, S. Takahashi, F. Nakajima, R. Katayama, K. Onabe
    • Organizer
      26th Electronic Materials Symposium (EMS-26)
    • Place of Presentation
      琵琶湖(滋賀)
    • Year and Date
      2007-07-04
    • Related Report
      2007 Annual Research Report
  • [Remarks] ホームページ等

    • URL

      http://www.onblab.k.u-tokyo.ac.jp

    • Related Report
      2009 Final Research Report
  • [Remarks]

    • URL

      http://www.onblab.k.u-tokyo.ac.jp/onblab/

    • Related Report
      2009 Annual Research Report
  • [Remarks]

    • URL

      http://www.onblab.k.u-tokyo.ac.jp/onblab/

    • Related Report
      2008 Annual Research Report
  • [Remarks]

    • URL

      http://www.onblab.k.u-tokyo.ac.jp/

    • Related Report
      2007 Annual Research Report

URL: 

Published: 2007-04-01   Modified: 2016-04-21  

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