High-Quality Formation of SiGe on Flexible Substrates for Transistor Application
| Project/Area Number |
19360011
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Applied materials science/Crystal engineering
|
|---|
| Research Institution | Kyushu University |
|---|
Principal Investigator |
MIYAO Masanobu Kyushu University, 大学院・システム情報科学研究院, 教授 (60315132)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
SADOH Taizoh 九州大学, 大学院・システム情報科学研究院, 准教授 (20274491)
HAMAYA Kohei 九州大学, 大学院・システム情報科学研究院, 准教授 (90401281)
|
|---|
| Project Period (FY) |
2007 – 2009
|
| Project Status |
Completed (Fiscal Year 2009)
|
| Budget Amount *help |
¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000)
Fiscal Year 2009: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2008: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
Fiscal Year 2007: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
|
|---|
| Keywords | 電子デバイス・機器 / 集積回路 / ディスプレイ / シリコンゲルマニウ / 薄膜トランジスタ / シリコンゲルマニウム |
|---|
| Research Abstract |
Low-temperature growth of SiGe has been investigated to realize the flexible system-in-displays. We have developed a new solid-phase crystallization technique, which uses catalytic effects of some metals and electric-fields. Consequently, the low-temperature crystallization (<250℃) becomes possible. Moreover, new type of transistors having source and drain electrodes with Schottky barrier contacts have been fabricated. Very high carrier mobility compared to poly-Si has been demonstrated.
|
Report
(4 results)
Research Products
(48 results)
