| Budget Amount *help |
¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000)
Fiscal Year 2009: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2008: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
Fiscal Year 2007: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
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| Research Abstract |
Low-temperature growth of SiGe has been investigated to realize the flexible system-in-displays. We have developed a new solid-phase crystallization technique, which uses catalytic effects of some metals and electric-fields. Consequently, the low-temperature crystallization (<250℃) becomes possible. Moreover, new type of transistors having source and drain electrodes with Schottky barrier contacts have been fabricated. Very high carrier mobility compared to poly-Si has been demonstrated.
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