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High-Quality Formation of SiGe on Flexible Substrates for Transistor Application

Research Project

Project/Area Number 19360011
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionKyushu University

Principal Investigator

MIYAO Masanobu  Kyushu University, 大学院・システム情報科学研究院, 教授 (60315132)

Co-Investigator(Kenkyū-buntansha) SADOH Taizoh  九州大学, 大学院・システム情報科学研究院, 准教授 (20274491)
HAMAYA Kohei  九州大学, 大学院・システム情報科学研究院, 准教授 (90401281)
Project Period (FY) 2007 – 2009
Project Status Completed (Fiscal Year 2009)
Budget Amount *help
¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000)
Fiscal Year 2009: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2008: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
Fiscal Year 2007: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Keywords電子デバイス・機器 / 集積回路 / ディスプレイ / シリコンゲルマニウ / 薄膜トランジスタ / シリコンゲルマニウム
Research Abstract

Low-temperature growth of SiGe has been investigated to realize the flexible system-in-displays. We have developed a new solid-phase crystallization technique, which uses catalytic effects of some metals and electric-fields. Consequently, the low-temperature crystallization (<250℃) becomes possible. Moreover, new type of transistors having source and drain electrodes with Schottky barrier contacts have been fabricated. Very high carrier mobility compared to poly-Si has been demonstrated.

Report

(4 results)
  • 2009 Annual Research Report   Final Research Report ( PDF )
  • 2008 Annual Research Report
  • 2007 Annual Research Report
  • Research Products

    (48 results)

All 2010 2009 2008 2007

All Journal Article (40 results) (of which Peer Reviewed: 33 results) Presentation (8 results)

  • [Journal Article] Formation of single-crystalline Ge stripes on quartz substrates by SiGe mixing-triggered liquid-phase epitaxy2010

    • Author(s)
      K. Toko, T. Tanaka, T. Sadoh, M. Miyao
    • Journal Title

      Thin Solid Films 518

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxy2010

    • Author(s)
      T. Tanaka, M. Tanaka, M. Itakura, T. Sadoh, M. Miyao
    • Journal Title

      Thin Solid Films 518

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Al-induced low-temperature crystallization of Si1-xGex (0<x<1) by controlling layer exchange process2010

    • Author(s)
      M. Kurosawa, T. Sadoh, M. Miyao
    • Journal Title

      Thin Solid Films 518

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Liquid-phase epitaxial growth of Ge island on insulator using Ni-imprint-induced Si crystal as seed2010

    • Author(s)
      K. Toko, T. Sakane, T. Tanaka, T. Sadoh, M. Miyao
    • Journal Title

      Thin Solid Films 518

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] High Quality Single-Crystalline Ge-Rich SiGe on Insulator Structures by Si-doping Controlled Rapid Melting Growth2010

    • Author(s)
      T. Tanaka, K. Toko, T. Sadoh, M. Miyao
    • Journal Title

      Applied Physics Express 3,3

      Pages: 31301-31301

    • NAID

      10027013905

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Ge Fraction Dependence of Al-Induced Crystallization of SiGeat Low Temperatures2009

    • Author(s)
      M. Kurosawa, Y. Tsumura, T. Sadoh, M. Miyao
    • Journal Title

      Journal of the Korean Physical Society 54,1

      Pages: 451-454

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization2009

    • Author(s)
      K. Toko, T. Sadoh, M. Miyao
    • Journal Title

      Japanese Journal of Applied Physics 48,3

    • NAID

      210000066426

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex (x: 0-1) on Insulating Substrate2009

    • Author(s)
      M. Kurosawa, Y. Tsumira, T. Sadoh, M. Miyao
    • Journal Title

      Japanese Journal of Applied Physics 48,3

    • NAID

      210000066421

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO2 Structures2009

    • Author(s)
      T. Sadoh, H. Ohta, M. Miyao
    • Journal Title

      Japanese Journal of Applied Physics 48,3

    • NAID

      210000066423

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Giant Ge-on-Insulator Formation by Si-Ge Mixing-Triggered Liquid-Phase Epitaxy2009

    • Author(s)
      M Miyao, T. Tanaka, K. Toko, M. Tanaka
    • Journal Title

      Applied Physics Express 2,4

    • NAID

      10025085858

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Indentation-induced low-temperature solid-phase crystallization of Si1-xGex (x: 0-1) on insulator2009

    • Author(s)
      K. Toko, T. Sadoh, M. Miyao
    • Journal Title

      Applied Physics Letters 94,19

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor2009

    • Author(s)
      T. Sadoh, T. Tanaka, Y. Ohta, K. Toko, M. Miyao
    • Journal Title

      電子情報通信学会信学技報

    • Related Report
      2009 Final Research Report
  • [Journal Article] High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth2009

    • Author(s)
      M. Miyao, K. Toko, T. Tanaka, T. Sadoh
    • Journal Title

      Applied Physics Letters 95,2

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Defect-free single-crystal Ge island arrays on insulator by rapid-melting growth combined with seed-positioning technique2009

    • Author(s)
      K. Toko, T. Sakane, T. Tanaka, T. Sadoh, M. Miyao
    • Journal Title

      Applied Physics Letters 95,11

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation2009

    • Author(s)
      M. Kurosawa, N. Kawabata, T. Sadoh, M. Miyao
    • Journal Title

      Applied Physics Letters 95,13

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization2009

    • Author(s)
      K. Toko, I. Nakao, T. Sadoh, T. Noguchi, M. Miyao
    • Journal Title

      Solid-State Electronics 53

      Pages: 1159-1164

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Stress-enhancement in free-standing Si pillars through nonequilibrium dehydrogenation in SiN:H stress-liners by ultraviolet light irradiation2009

    • Author(s)
      T. Tanaka, T. Sadoh, M. Kurosawa, M. Tanaka, M. Yamaguchi, S. Suzuki, T. Kitamura, M. Miyao
    • Journal Title

      Applied Physics Letters 95

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] アルミニウム誘起層交換法によるSiGe/ガラスの低温成長2009

    • Author(s)
      黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信
    • Journal Title

      電子情報通信学会信学技報

      Pages: 19-21

    • NAID

      110007227256

    • Related Report
      2009 Final Research Report
  • [Journal Article] Giant Ge-on-Insulator Formation by Si-Ge Mixing-Triggered Liquid-Phase Epitaxy2009

    • Author(s)
      M.Miyao, et al.
    • Journal Title

      Applied Physics Express 2

    • NAID

      10025085858

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Indentation-induced low-temperature solid-phase crystallization of Sil-xG ex(x : 0-1)on insulator2009

    • Author(s)
      K.Toko, et al.
    • Journal Title

      Applied Physics Letters 94

    • Related Report
      2009 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation2009

    • Author(s)
      M.Kurosawa, et al.
    • Journal Title

      Applied Physics Letters 95

    • Related Report
      2009 Annual Research Report
  • [Journal Article] Abnormal oxidation characteristics of SiGe/SOI structures depending on piled-up Ge fraction at SiO2/SiGe interface2008

    • Author(s)
      M. Tanaka, T. Ohka, T. Sadoh, M. Miyao
    • Journal Title

      J. Appl. Phys. 103

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Nucleation Controlled Metal-Induced Lateral Crystallization of Amorphous Si1-xGex with Whole Ge Fraction on Insulator2008

    • Author(s)
      T. Sadoh, K. Toko, H. Kanno, S. Masumori, M. Itakura, N. Kuwano, M. Miyao
    • Journal Title

      Jpn. J. Appl. Phys. 47,3

      Pages: 1876-1879

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Influences of Si Pillar Geometry on SiN-Stressor Induced Local Strain2008

    • Author(s)
      M. Tanaka, T. Sadoh, J. Morioka, T. Kitamura, M. Miyao
    • Journal Title

      Applied Surface Science 254,19

      Pages: 6226-6228

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Low-Temperature Solid-Phase Crystallization of Amorphous SiGe Films on Glass by Imprint Technique2008

    • Author(s)
      K. Toko, H. Kanno, A. Kenjo, T. Sadoh T. Asano, M. Miyao
    • Journal Title

      Solid-State Electronics 52,8

      Pages: 1221-1224

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Formation of SiGe Quasi-Single Crystal Grain on Insulator by Indentation-Induced Solid-Phase Crystallization2008

    • Author(s)
      T. Sadoh, K. Toko, K. Ikeda, S. Hata, M. Itakura, H. Nakashima, M. Nishida, M. Miyao
    • Journal Title

      ECS Transactions 16,10

      Pages: 219-222

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Enhancement of Local Strain in Si Microstructure by Oxidation Induced Ge Condensation2008

    • Author(s)
      M. Tanaka, T. Tanaka, T. Sadoh, J. Morioka, T. Kitamura, M. Miyao
    • Journal Title

      ECS Transactions 16,10

      Pages: 189-192

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Comprehensive study of low temperature (<1000oC) oxidation process in SiGe/SOI structures2008

    • Author(s)
      M. Tanaka, T. Ohka, T. Sadoh, M. Miyao
    • Journal Title

      Thin Solid Films 517,1

      Pages: 251-253

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence2008

    • Author(s)
      Dong Wang, H. Nakashima, M. Tanaka, T. Sadoh, M. Miyao, J. Morioka, T. Kitamura
    • Journal Title

      Thin Solid Films 517,1

      Pages: 31-33

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H+ irradiation-assisted Ge condensation method2008

    • Author(s)
      M. Tanaka, A. Kenjo, T. Sadoh, M. Miyao
    • Journal Title

      Thin Solid Films 517,1

      Pages: 248-250

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] 次世代TFTに向けたa-Ge/石英の低温固相成長2008

    • Author(s)
      中尾勇兼, 都甲薫, 野口隆, 佐道泰造
    • Journal Title

      電子情報通信学会信学技報

      Pages: 83-88

    • NAID

      110006792721

    • Related Report
      2009 Final Research Report
  • [Journal Article] 金属触媒誘起固相成長法による多結晶Ge/絶縁膜の低温形成~電界印加効果、触媒種効果~2008

    • Author(s)
      萩原貴嗣, 都甲薫, 佐道泰造
    • Journal Title

      電子情報通信学会信学技報

      Pages: 101-105

    • NAID

      110006792724

    • Related Report
      2009 Final Research Report
  • [Journal Article] (招待)a-SiGe薄膜の低温結晶化機構の電子顕微鏡的研究2008

    • Author(s)
      板倉賢, 宮尾正信
    • Journal Title

      電子情報通信学会信学技報

    • Related Report
      2009 Final Research Report
  • [Journal Article] 縁膜上における非晶質SiGeのインデント誘起固相成長2008

    • Author(s)
      都甲薫, 佐道泰造宮尾正信
    • Journal Title

      電気学会・電子材料研究会資料

      Pages: 31-34

    • Related Report
      2009 Final Research Report
  • [Journal Article] Nucleation Controlled Metal-Induced Lateral Crystallization of Amorphous Si_<1-x>Ge_x with Whole Ge Fraction on Insulator2008

    • Author(s)
      T. Sadoh, et al.
    • Journal Title

      Japanese Journal of Applied Physics 47

      Pages: 1876-1879

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Low-Temperature Solid-Phase Crystallization of Amorphous SiGe Films on Glass by Imprint Technique2008

    • Author(s)
      K. Toko, et al.
    • Journal Title

      Solid-State Electronics 52

      Pages: 1221-1224

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Comparative Study of Al-Induced Crystallization for Poly-Si and Ge on Insulating Film2007

    • Author(s)
      Y. Tsumura, I. Nakao, H. Kanno, A. Kenjo, T. Sadoh, M. Miyao
    • Journal Title

      ECS Transactions 11,6

      Pages: 395-402

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] High-Performance Poly-Ge Thin-Film Transistor with NiGe Schottky Source/Drain2007

    • Author(s)
      T. Sadoh, H. Kamizuru, A. Kenjo, M. Miyao
    • Journal Title

      Materials Science Forum 561-565

      Pages: 1181-1184

    • Related Report
      2009 Final Research Report
    • Peer Reviewed
  • [Journal Article] Comparative Study of Al-lnduced Crystallization for Poly-Si and Ge on Insulating Film2007

    • Author(s)
      Y. Tsumura, et. al.
    • Journal Title

      ECS Transactions 11

      Pages: 395-402

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High-Performance Poly-Ge Thin-Film Transistor with Nice Schottky Source/Drain2007

    • Author(s)
      T. Sadoh, et. al.
    • Journal Title

      Materials Science Forum 561-565

      Pages: 1181-1184

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Presentation] SiGe Mixing-Triggered Liquid-Phase Epitaxy for Defect-Free GOI (Ge on Insulator)2010

    • Author(s)
      K. Toko, M. Kurosawa, T. Tanaka, T. Sadoh, M. Miyao
    • Organizer
      5th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai, JAPAN(招待講演)
    • Related Report
      2009 Final Research Report
  • [Presentation] Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor2009

    • Author(s)
      T. Sadoh, T. Tanaka, Y. Ohta, K. Toko, M. Miyao
    • Organizer
      AWAD2009
    • Place of Presentation
      Busan, Korea(招待講演)
    • Related Report
      2009 Final Research Report
  • [Presentation] (招待講演)Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor2009

    • Author(s)
      T.Sadoh, et al.
    • Organizer
      AWAD2009
    • Place of Presentation
      韓国・プサン
    • Related Report
      2009 Annual Research Report
  • [Presentation] a-SiGe薄膜の低温結晶化機構の電子顕微鏡的研究2008

    • Author(s)
      板倉賢, 宮尾正信
    • Organizer
      電子情報通信学会研究会sdm
    • Place of Presentation
      沖縄(招待講演)
    • Related Report
      2009 Final Research Report
  • [Presentation] Materials Innovation for Advanced TFT : Why and How?2008

    • Author(s)
      M. Miyao, T. Sadoh, Y. Maeda
    • Organizer
      The 4th International Thin-Film Transistor Conference
    • Place of Presentation
      Seoul, Korea(招待講演)
    • Related Report
      2009 Final Research Report
  • [Presentation] (招待講演)a-SiGe薄膜の低温結晶化機構の電子顕微鏡的研究2008

    • Author(s)
      板倉賢, et al.
    • Organizer
      電子情報通信学会SDM研究会
    • Place of Presentation
      沖縄
    • Related Report
      2008 Annual Research Report
  • [Presentation] シリコン系ヘテロ超構造技術の創出と未来型デバイスの夢-半導体ナノテクノロジーリサーチコアの活動を中心として-2007

    • Author(s)
      宮尾正信
    • Organizer
      薄膜材料デバイス研究会第4回研究集会
    • Place of Presentation
      京都(招待講演)
    • Related Report
      2009 Final Research Report
  • [Presentation] 16.Electric Field Assisted Low-Temperature Growth of SiGe on Insulating Films for Future TFT2007

    • Author(s)
      M. Miyao, et. al.
    • Organizer
      TFPA2007
    • Place of Presentation
      中国・上海
    • Related Report
      2007 Annual Research Report

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Published: 2007-04-01   Modified: 2016-04-21  

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