Determination of Insulator/Si Interface Structure by Extremely Sensitive and Highly Resolved Interfacial Analyses

• Project/Area Number: 19360014
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Tohoku University
• Principal Investigator: HATTORI Takeo Tohoku University, 未来科学技術共同研究センター, 教授 (10061516)
• Co-Investigator(Kenkyū-buntansha): KIMURA Kenji 京都大学, 工学(系)研究科(研究院), 教授 (50127073) ; NAKAJIMA Kaoru 京都大学, 工学(系)研究科(研究院), 助教 (80293885) ; NOHIRA Hiroshi 東京都市大学, 工学部, 准教授 (30241110) ; TERAMOTO Akinobu 東北大学, 未来科学技術共同研究センター, 准教授 (80359554) ; SUWA Tomoyuki 東北大学, 未来科学技術共同研究センター, 助教 (70431541) ; KINOSHITA Toyohiko (財)高輝度光科学研究センター, 分子物性IIグループ, 主席研究員 (60202040)
• Project Period (FY): 2007 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000); Fiscal Year 2009: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000); Fiscal Year 2008: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000); Fiscal Year 2007: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000)
• Keywords: 界面 / シリコン酸化膜 / シリコン窒化膜 / 光電子分光法

Research Abstract

Composition and chemical structures of high quality Si-SiO_2 systems formed using oxygen radicals and those of high quality Si-Si_3N_4 systems formed using nitrogen-hydrogen radicals were studied by measuring angle-resolved photoelectron spectra arising from Si 2p and O 1s core levels and valence band with the same probing depth.

Research Products

• [Journal Article] Crystallographic orientation dependence of compositional transition and valence band offset at SiO_2/Si interface formed using oxygen radicals (2010)
  • Author(s): T. Suwa, A. Teramoto, Y. Kumagai, K. Abe, X. Li, Y. Nakao, M. Yamamoto, Y. Kato, T. Muro, T. Kinoshita, T. Ohmi, T. Hattori
  • Journal Title: Applied Physics Letters Vol. 96, No. 10
  • NAID: 110008106358
  • Peer Reviewed
• [Journal Article] Si-SiO_2系の形成・構造・物性」、表面科学 (日本表面科学会) (2010)
  • Author(s): 服部健雄, 廣瀬和之
  • Journal Title: (社)日本表面科学会創立30周年記念特集号分野別記念解説 Vol. 31, No. 1
• [Journal Article] Crystallographic orientation dependence of compositional transition and valence band offset at SiO_2/Si interface formed using oxygen radicals (2010)
  • Author(s): T.Suwa
  • Journal Title: Applied Physics Letters Vol.96
  • NAID: 110008106358
  • Peer Reviewed
• [Journal Article] Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film (2009)
  • Author(s): K. Kakushima, K. Tachi, J. Song, S. Sato, H. Nohira, E. Ikenaga, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai
  • Journal Title: Journal of Applied Physics Vol. 106, No. 12
  • Peer Reviewed
• [Journal Article] 巻頭言、LSIにかかわる技術の変遷と課題 (2009)
  • Author(s): 服部健雄
  • Journal Title: 応用物理学会誌 Vol. 78, No. 9 Pages: 841-841
• [Journal Article] Complementary Metal-Oxide-Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface (2009)
  • Author(s): R. Kuroda, A. Teramoto, Y. Nakao, T. Suwa, M. Konda, R. Hasebe, X. Li, T. Isogai, H. Tanaka, S. Sugawa, T. Ohmi
  • Journal Title: Jpn.J.Appl.Phys vol. 48
  • NAID: 210000066559
  • Peer Reviewed
• [Journal Article] Different mechanism to explain the 1/f noise in n- and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers (2009)
  • Author(s): P. Gaubert, A. Teramoto, W. Cheng, T. Hamada, T. Ohmi
  • Journal Title: J.Vac.Sci.Technol.B Vol. 27, No. 1 Pages: 394-401
  • Peer Reviewed
• [Journal Article] Atomically Flat Silicon Surface and Silicon /Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal-Insulator-Silicon FETs (2009)
  • Author(s): R. Kuroda, T. Suwa, A. Teramoto, R. Hasebe, S. Sugawa, T. Ohmi
  • Journal Title: IEEE Trans.Electron Devices Vol. 56, No. 2 Pages: 291-298
  • NAID: 120002338863
  • Peer Reviewed
• [Journal Article] Complementary Metal-Oxide- Silicon Field-Effect- Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface (2009)
  • Author(s): R.Kuroda
  • Journal Title: Jpn.J.Appl.Phys. vol.48
  • Peer Reviewed
• [Journal Article] Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for(100)Surface Orientation Large- Diameter Wafers Introducing High Performance and Low- Noise Metal-Insulator-Silicon FETs (2009)
  • Author(s): R.Kuroda
  • Journal Title: IEEE Trans.Electron Devices Vol.56 Pages: 291-298
  • Peer Reviewed
• [Journal Article] Angle-resolved photoelectron study on the structures of silicon nitride films and Si_3N_4/Si interfaces formed using nitrogen-hydrogen radicals (2008)
  • Author(s): T. Aratani, M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, T. Suwa, A. Teramoto, T. Ohmi, T. Hattori
  • Journal Title: Journal of Applied Physics Vol. 104, No. 11
  • Peer Reviewed
• [Journal Article] Obser-vation of band bending of metal/high-k Si capacitor with high energy x-ray photo-electron spectroscopy and its application to interface dipole measurement (2008)
  • Author(s): K. Kakushima, K. Okamoto, K. Tachi, J. Song, T. Kawanago, K. Tsutsui, N. Sugii, P. Ahmet, T. Hattori, H. Iwai
  • Journal Title: Journal of Applied Physics Vol. 104, No. 10
  • Peer Reviewed
• [Journal Article] Activated boron and its concen-tration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements (2008)
  • Author(s): K. Tsutsui, T. Matsuda, M. Watanabe, C-G Jin, Y. Sasaki, B. Mizuno, E. Ikenaga, K. Kakushima, P. Alhmet, T. Maruizumi, H. Nohira, T. Hattori, H. Iwai
  • Journal Title: Journal of Applied Physics Vol. 104, No. 9
  • Peer Reviewed
• [Journal Article] Investigation of the effect of in situ annealing of FePt nanodots under high vacuum on the chemical states of Fe and Pt by x-ray photoelectron spectroscopy (2008)
  • Author(s): M. Murugesan, J. C. Bea, C.-K. Yin, H. Nohira, E. Ikenaga, T. Hattori, M. Nishijima, T. Fukushima, T. Tanaka, M. Miyao, M. Koyanagi
  • Journal Title: Journal of Applied Physics Vol. 104, No. 7
  • Peer Reviewed
• [Journal Article] Evaluation of Si_3N_4/Si Interface by UV Raman Spectrsocopy (2008)
  • Author(s): A. Ogura, T. Yoshida, D. Kosemura, Y. Kakemura, T. Aratani, M. Higuchi, S. Sugawa, A. Teramoto, T. Ohmi, T. Hattori
  • Journal Title: Applied Surface Science Vol. 254 Pages: 6229-6231
  • Peer Reviewed
• [Journal Article] Band bending measurement of HfO_2/SiO_2/Si capacitor with ultra-thin La_2O_3 insertion by XPS (2008)
  • Author(s): K. Kakushima, K. Okamoto, M. Adachi, K. Tachi, J. Song, S. Sato, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai
  • Journal Title: Applied Surface Science Vol. 254 Pages: 6106-6108
  • Peer Reviewed
• [Journal Article] Angle-resolved Photoelectron Study on the Structures of Silicon Nitride Films and Si_3N_4 / Si Interfaces Formed using Nitrogen-Hydrogen Radicals (2008)
  • Author(s): Takashi Aratani
  • Journal Title: Journal of Applied Physics 104
  • Peer Reviewed
• [Journal Article] Evaluation of Si_3N_4 / Si Interface by UV Raman Spectrsocopy (2008)
  • Author(s): Atsushi Ogura
  • Journal Title: Applied Surface Science 254 Pages: 6229-6231
  • Peer Reviewed
• [Journal Article] マイクロ波励起プラズマを用いた高品質シリコン窒化膜の形成 (2007)
  • Author(s): 寺本章伸, 荒谷崇, 樋口正顕, 池永英司, 平山昌樹, 須川成利, 服部健雄, 大見忠弘
  • Journal Title: 真空 (日本真空協会) Vol. 50, No. 11 Pages: 659-664
  • NAID: 10020009820
  • Peer Reviewed
• [Journal Article] ラジカル窒化シリコン酸窒化膜における窒素プロファイルのX線光電子分光分析による評価 (2007)
  • Author(s): 河瀬和雅, 梅田浩司, 井上真雄, 諏訪智之, 寺本章伸, 服部健雄, 大見忠弘
  • Journal Title: 真空 (日本真空協会) Vol. 50, No. 11 Pages: 672-677
  • NAID: 10020009875
  • Peer Reviewed
• [Journal Article] Subnitride and valence band offset at Si_3N_4/Si interface formed using nitrogen-hydrogen radicals (2007)
  • Author(s): M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, T. Maruizumi, A. Teramoto, T. Ohmi, T. Hattori
  • Journal Title: Applied Physics Letters Vol. 90, No. 12
  • Peer Reviewed
• [Journal Article] Electrical Characteristics of Si_3N_4 Films Formed by Directly Radical Nitridation on Si (110) and Si (100) Surfaces (2007)
  • Author(s): M. Higuchi, T. Aratani, T. Hamada, S. Shinagawa, H. Nohira, E. Ikenaga, A. Teramoto, T. Hattori, S. Sugawa, T. Ohmi
  • Journal Title: Japanese Journal of Applied Physics Vol. 46, No. 4B Pages: 1895-1898
  • NAID: 10022545462
  • Peer Reviewed
• [Journal Article] Angle-resolved photoelectron spectroscopy on gate insulators (2007)
  • Author(s): T. Hattori, H. Nohira, S. Shinagawa, M. Hori, M. Kase, T. Maruizumi
  • Journal Title: Microelectronics Reliability Vol. 47 Pages: 20-26
  • Peer Reviewed
• [Journal Article] Photoelectron Spectros-copy Studies of SiO_2/Si Interfaces (2007)
  • Author(s): K. Hirose, H. Nohira, K. Azuma, T. Hattori
  • Journal Title: Progress in Surface Science Vol. 82 Pages: 3-54
  • Peer Reviewed
• [Journal Article] Very High Carrier Mobility for High-Performance CMOS on a Si (110) Surface (2007)
  • Author(s): A. Teramoto, T. Hamada, M. Yamamoto, P. Gaubert, H. Akahori, K. Nii, M. Hirayama, K. Arima, K. Endo, S. Sugawa, T. Ohmi
  • Journal Title: IEEE Trans.Electron Devices Vol. 54, No. 6 Pages: 1438-1445
  • NAID: 120002338878
  • Peer Reviewed
• [Journal Article] Electric Characteristics of Si_3N_4 Films Formed by Directly Radical Nitridation on Si(110)and Si(100)Surfaces (2007)
  • Author(s): Masaaki HIGUCHI
  • Journal Title: Japanese Journal of Applied Physics 46 Pages: 1895-1898
  • Peer Reviewed
• [Presentation] 原子スケールで平坦なSiO_2/Si界面極近傍における歪評価 (2010)
  • Author(s): 服部真季, 小瀬村大亮, 武井宗久, 永田晃基, 赤松弘彬, 小椋厚志, 諏訪智之, 寺本章伸, 服部健雄, 大見忠弘, 小金澤智之, 廣沢一郎
  • Organizer: 応用物理学会、19p-P13-13
  • Place of Presentation: 東海大学
  • Year and Date: 2010-03-19
• [Presentation] Study on Compositional Tran-sition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron (2009)
  • Author(s): T. Suwa, T. Aratani, M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, A. Teramoto, T. Ohmi, T. Hattori
  • Organizer: Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2009)
  • Place of Presentation: Busan, Korea
  • Year and Date: 2009-06-25
• [Presentation] UV-Raman Spectroscopy Study on SiO_2/Si Interface (2009)
  • Author(s): M. Hattori, T. Yoshida, D. Kosemura, A. Ogura, T. Suwa, A. Teramoto, T. Hattori, T. Ohmi
  • Organizer: Symposium on Dielectric and Semiconductor Materials、Devices、and Processing、215th ECS Meeting
  • Place of Presentation: San Francisco
  • Year and Date: 2009-05-25
• [Presentation] UVラマン分光法によるSiO_2/Si界面の評価 (2009)
  • Author(s): 服部真季, 吉田哲也, 小瀬村大亮, 小椋厚志, 諏訪智之, 寺本章伸, 服部健雄, 大見忠弘
  • Organizer: 応用物理学会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-30
• [Presentation] Study on Gate Stacks in Future Nano-Scaled CMOS using Hard X-Ray Photoelec-tron Spectroscopy (2009)
  • Author(s): S. Zaima, T. Hattori
  • Organizer: International Work-shop for New Opportunities in Hard X-ray Photoelectron Spectroscopy : HAXPES 2009
  • Place of Presentation: Long Island, NY, USA
• [Presentation] Study on Compositional Tran- sition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron (2009)
  • Author(s): T.Suwa
  • Organizer: Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: Busan、Korea
• [Presentation] Evaluation of Si_3N_4/Si Interface by UV Raman Spectroscopy (2007)
  • Author(s): T. Yoshida, K. Yamasaki, D. Kosemura, Y. Kakemura, T. Aratani, M. Higuchi, S. Sugawa, A. Teramoto, T. Ohmi, T. Hattori
  • Organizer: Fifth International symposium on Control of Semiconductor Interfaces, OA2-5
  • Place of Presentation: Hachioji, Tokyo
  • Year and Date: 2007-11-13