Basic Research for Carbon Electronics Devices using Solid C_<60> and/or Graphene

• Project/Area Number: 19360141
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: University of Fukui
• Principal Investigator: HASHIMOTO Akihiro University of Fukui, 大学院・工学研究科, 准教授 (10251985)
• Co-Investigator(Kenkyū-buntansha): YAMAMOTO Akio 福井大学, 大学院・工学研究科, 教授 (90210517) ; KUZUHARA Masaaki 福井大学, 大学院・工学研究科, 教授 (20377469) ; FUKUI Kazutoshi 福井大学, 大学院・工学研究科, 教授 (80156752) ; SHIOJIMA Kenji 福井大学, 大学院・工学研究科, 准教授 (70432151)
• Project Period (FY): 2007 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000); Fiscal Year 2009: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000); Fiscal Year 2008: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000); Fiscal Year 2007: ¥8,580,000 (Direct Cost: ¥6,600,000、Indirect Cost: ¥1,980,000)
• Keywords: 電気・電子材料(半導体、誘電体、磁性体、超誘電体、有機物、絶縁体、超伝導体など) / 固相C_<60>薄膜 / グラフェン / 炭素系デバイス / SiC基板 / 電界効果トランジスタ / AlN単結晶薄膜 / 固相C60薄膜 / A1N単結晶薄膜

Research Abstract

本研究は、固相C60FETのゲート膜として(1)Siあるいは導電性SiC基板上の単結晶AlN薄膜を用いること、及び(2)平坦化されたSiO_2膜上にグラフェンを転写して規則的なパターンを形成する、という2つの新たな方法を提案することにより単結晶C_<60>薄膜と絶縁膜の制御された界面を形成することで電界効果によるキャリア注入の本質を明らかにしようとするものである。
研究の結果、以下の知見を得た。すなわち、前記(1)については、理想界面を有する固相C_<60>層のエピタキシャル成長に必要な6H-SiC基板上の原子レベルで表面平坦なAlN表面の形成には、CMP処理SiC(0001)基板の減圧水素高温処理により6ML高さにステップ制御をした基板が必要であることを明らかにした。また、(2)については、微傾斜SiC基板上に形成したグラフェン多層膜上には、固相C_<60>が、ステップフローモードで成長することを見出し、核形成を電子線照射により制御できることを明らかにした。また、層数を制御した1層グラフェン層及び2層グラフェン層をSiO_2基板上への大面積直接転写に世界で初めて成功した。これらの研究成果は、理想的な界面形成技術の向上に大きな寄与を与えるものと考えられ、固相C_<60>及びグラフェンを用いた炭素系デバイスの研究に大きく貢献するものと考えられる。

Research Products

• [Journal Article] (2010)
  • Author(s): A. Hashimoto
  • Journal Title: Nano-electronics & Nanophotonics 6
• [Journal Article] C_<60> Field Effect Transistors (2010)
  • Author(s): Akihiro Hashimoto
  • Journal Title: Handbook of Nanophysics : Nanoelectronics & Nanophotonics 6
  • Peer Reviewed
• [Journal Article] (2009)
  • Author(s): M. Horie, K. Sugita, A. Hashimoto, A. Yamamoto
  • Journal Title: Solar Energy Materials and Solar Cells 93 Pages: 1013-1015
• [Journal Article] (2009)
  • Author(s): Md. R. Islam, K. Sugita, M. Horie, A. Hashimoto, A. Yamamoto
  • Journal Title: J. Cryst. Growth 31 Pages: 2817-2820
• [Journal Article] (2009)
  • Author(s): K. Sugita, A. Hashimoto, A. Yamamoto
  • Journal Title: Phys. Status Sol 6 Pages: 393-396
• [Journal Article] (2009)
  • Author(s): K. Sugita, A. Hashimoto, A. Yamamoto
  • Journal Title: Phys. Status Sol 6 Pages: 389-392
• [Journal Article] (2009)
  • Author(s): T.T. Kang, M. Yamamoto, M. Tanaka, A. Hashimoto, A. Yamamoto
  • Journal Title: J. Appl. Phys 106
• [Journal Article] (2009)
  • Author(s): T.T. Kang, M. Yamamoto, M. Tanaka, A. Hashimoto, A. Yamamoto
  • Journal Title: Optics Letters 34 Pages: 2507-2509
• [Journal Article] (2009)
  • Author(s): T.T. Kang, A. Hashimoto, A. Yamamoto
  • Journal Title: Phys. Rev. B 79 Pages: 33301-33301
• [Journal Article] (2009)
  • Author(s): A. Hashimoto, H. Terasaki, A. Yamamoto, S. Tanaka
  • Journal Title: Diamond & Related Materials 18 Pages: 388-391
• [Journal Article] Electron Beam Irradiation Effect for Solid C_<60> Epitaxy on Graphene (2009)
  • Author(s): Akihiro Hashimoto, Hiromitsu Terasaki, Akio Yamamoto, Satoru Tanaka
  • Journal Title: Diamond & Related Materials 18 Pages: 388-391
  • Peer Reviewed
• [Journal Article] Electron Beam Irradiation Effect for Solid C_<60> Epitaxy on Graphene (2009)
  • Author(s): Akihiro Hashimoto, et. al
  • Journal Title: Diamond & Related Materials 18 Pages: 388-391
  • Peer Reviewed
• [Journal Article] (2008)
  • Author(s): A. Hashimoto, K. Iwao, S. Tanaka, A. Yamamoto
  • Journal Title: Diamond & Related Materials 17 Pages: 1622-1624
• [Journal Article] (2008)
  • Author(s): Y. Houchin, A. Hashimoto, A. Yamamoto
  • Journal Title: Phys. Status Sol 5 Pages: 1571-1574
• [Journal Article] (2008)
  • Author(s): A. Hashimoto, K. Iwao, A. Yamamoto
  • Journal Title: Phys. Status Sol. 5 Pages: 1876-1878
• [Journal Article] (2008)
  • Author(s): K. Iwao, A. Yamamoto, A. Hashimoto
  • Journal Title: Phys. Status Sol. 5 Pages: 1771-1773
• [Journal Article] (2008)
  • Author(s): K. Sugita, Y. Nagai, D. Matsuoka, A. Hashimoto, H. Harima, A. Yamamoto
  • Journal Title: Phys. Status Sol 5 Pages: 1765-1767
• [Journal Article] (2008)
  • Author(s): A. Yamamoto, K. Sugita, Y. Nagai, A. Hashimoto
  • Journal Title: Phys. Sta. Sol. 5 Pages: 1762-1764
• [Journal Article] (2008)
  • Author(s): T.T. Kang, A. Hashimoto, A. Yamamoto
  • Journal Title: Applied Physics Letters 92 Pages: 110902-110902
• [Journal Article] Van der Waals epitaxy of solid C_<60> on graphene sheet (2008)
  • Author(s): Akihiro Hashimoto, et. al
  • Journal Title: Diamond & Related Materials 17 Pages: 1622-1624
  • Peer Reviewed
• [Journal Article] A trade-off relation between tilt and twist angle fluctuations in InN grown by RF-MBE (2008)
  • Author(s): Akihiro Hashimoto, et. al
  • Journal Title: Physica Status Solidi (c) 5 Pages: 1876-1878
  • Peer Reviewed
• [Journal Article] New nitridation technique for mosaicity control in RF-MBE InN growth (2008)
  • Author(s): Akihiro Hashimoto, et. al
  • Journal Title: Physica Status Solidi (c) 5 Pages: 1771-1773
  • Peer Reviewed
• [Journal Article] (2007)
  • Author(s): W.J. Wang, K. Sugita, Y. Nagai, Y. Houchin, A. Hashi-moto, A. Yamamoto
  • Journal Title: Powder Diffraction 22 Pages: 219-222
• [Journal Article] (2007)
  • Author(s): K. Sugita, Y. Nagai, Y. Houchin, A. Hashimoto, A. Yamamoto
  • Journal Title: Phys. Sta. Sol. 4 Pages: 2461-2464
• [Journal Article] (2007)
  • Author(s): Y. Nagai, H. Niwa, A. Hashimoto, A. Yamamoto
  • Journal Title: Phys. Status Sol. 4 Pages: 2457-2460
• [Journal Article] (2007)
  • Author(s): W.J. Wang, Y. Nagai, Y. Houchin, A. Hashimoto, A. Yamamoto
  • Journal Title: Phys. Status Sol. 4 Pages: 2415-2418
• [Journal Article] Phys. Status Sol. (2007)
  • Author(s): K. Sugita, Y. Nagai, Y. Houchin, A. Hashimoto, A. Yamamoto
  • Journal Title: 4 Pages: 2461-2464
• [Journal Article] (2007)
  • Author(s): M.S. Cho, N. Sawazaki, A. Hashimoto, A. Yamamoto
  • Journal Title: Phys. Status Sol. 4 Pages: 2441-2444
• [Journal Article] (2007)
  • Author(s): K. Iwao, A. Yamamoto, A. Hashimoto
  • Journal Title: Phys. Status Sol. 4 Pages: 2453-2456
• [Journal Article] (2007)
  • Author(s): A. Hashimoto, K. Matsumoto, A. Yamamoto
  • Journal Title: J. Cryst. Growth 301/302 Pages: 1021-1024
• [Journal Article] (2007)
  • Author(s): A. Hashimoto, K. Iwao, A. Yamamoto
  • Journal Title: J. Cryst. Growth 301/302 Pages: 500-503
• [Journal Article] Fabrication and Characterization of C_<60> FET using A1N insulator Film (2007)
  • Author(s): Akihiro Hashimoto, et. al.
  • Journal Title: J. Cryst. Growth 301-302 Pages: 1021-1024
  • Peer Reviewed
• [Journal Article] Origin of n-Type Residual Carriers in RF-MOMBE Grown InN Layers (2007)
  • Author(s): Kohsuke Iwao, et. al.
  • Journal Title: Physica Status Solidi(c) 4 Pages: 2453-2456
  • Peer Reviewed
• [Journal Article] A quantitative study of suppressioneffect for oxygen contamination irradiation in InN RF-MOMBE growth (2007)
  • Author(s): Akihiro Hashimoto, et. al.
  • Journal Title: J. Cryst. Growth 301-302 Pages: 500-503
  • Peer Reviewed
• [Presentation] RF-MBE法によるHOPG基板上InN成長 (2010)
  • Author(s): 小竹弘倫, 田畑裕行, 下辻康広, 朴木博則, 山本嵩勇, 橋本明弘
  • Organizer: 2010年春季・第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学、平塚、日本
  • Year and Date: 2010-03-19
• [Presentation] ZnO基板上皿面GaN成長の低温MEEバッファ層による効果 (2010)
  • Author(s): 下辻康広, 朴木博則, 田畑裕行, 山本嵩勇, 橋本明弘
  • Organizer: 2010年春季・第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学、平塚、日本
  • Year and Date: 2010-03-19
• [Presentation] エピタキシャルグラフェン/Tiテープを用いたSiO2/Si基板上への大面積グラフェン転写プロセス (2010)
  • Author(s): 寺崎博満, 橋本明弘, 森田康平, 田中悟, 日比野浩樹
  • Organizer: 2010年春季・第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学、平塚、日本
  • Year and Date: 2010-03-18
• [Presentation] SiO2/Si基板上大面積転写エピタキシャルグラフェン層のラマン散乱分光法評価 (2010)
  • Author(s): 寺崎博満, 橋本明弘, 森田康平, 田中悟, 日比野浩樹
  • Organizer: 2010年春季・第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学、平塚、日本
  • Year and Date: 2010-03-18
• [Presentation] エピタキシャル・グラフェンの大面積転写技術 (2010)
  • Author(s): 橋本明弘
  • Organizer: 第2回九大グラフェン研究会 (主催・九大応用力学研究所)
  • Place of Presentation: 九州大学、福岡、日本
  • Year and Date: 2010-01-22
• [Presentation] A Breakthrough Toward Wafer-size Bi-layer Graphene Transfer (2009)
  • Author(s): 橋本明弘, 寺崎博満, 森田康平, 田中悟, 日比野浩樹
  • Organizer: Abstracts of MRS 2009 Fall Meeting, Symp. L5.2
  • Place of Presentation: Boston, USA
  • Year and Date: 2009-11-30
• [Presentation] RF-MBE Growth on Vicinal Sapphire Substrate using Migration Enhanced Epitaxy (2009)
  • Author(s): 下辻康広, 山本嵩勇, 橋本明弘
  • Organizer: Abstract book of 8th Int'l Conference of NitrideSemicon ductors (ICNS8), ThP-32
  • Place of Presentation: ICC Jeju, Korea
  • Year and Date: 2009-10-23
• [Presentation] A breakthrough toward wafer-size bi-layer graphene transfer (2009)
  • Author(s): 橋本明弘, 寺崎博満, 森田康平, 日日比野浩樹, 田中悟
  • Organizer: Technical Digest of International Conference on Silicon Cai Materials 2009, (ICSCRM2009), Tu-P-86 (Late News)
  • Place of Presentation: Nurnberg, Germany
  • Year and Date: 2009-10-17
• [Presentation] 微傾斜Si面SiCエピタキシャルグラフェンシード層を用いた大面積グラフェン層の転写法 (2009)
  • Author(s): 寺崎博満, 橋本明弘, 塩島謙次, 森田康平, 田中悟, 日比野浩樹
  • Organizer: 2009年秋季・第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学、富山、日本
  • Year and Date: 2009-09-10
• [Presentation] 微傾斜Si面SiCエピタキシャルグラフェンシード層を用いた大面積転写グラフェン層の顕微ラマン散乱分光測定 (2009)
  • Author(s): 寺崎博満, 橋本明弘, 塩島謙次, 森田康平, 田中悟, 日比野浩樹
  • Organizer: 2009年秋季・第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学、富山、日本
  • Year and Date: 2009-09-10
• [Presentation] 転写されたSiC上エピタキシャルグラフェン層の層数・表面構造評価 (2009)
  • Author(s): 上原直也, 寺崎博満, 森田康平, 塩島謙次, 日比野浩樹, 水野清義, 橋本明弘, 田中悟
  • Organizer: 2009年秋季・第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学、富山、日本
  • Year and Date: 2009-09-10
• [Presentation] Double resonant Raman spectra of a large area epitaxial graphene transferred from vicinal Si-face SiC substrate (2009)
  • Author(s): 橋本明弘, 寺崎博満, 田中悟
  • Organizer: Delegate Manual of 20th Europian Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides (DIAMOND2009), O62
  • Place of Presentation: Athens, Greek
  • Year and Date: 2009-09-10
• [Presentation] Characterization of InN grown by Pt catalyst-assisted MOVPE (2009)
  • Author(s): K. Sasamoto, K. Sugita, A. Hashimoto, A. Yamamoto
  • Organizer: Abstract book of 8th Int'l Conference of Nitride Semiconductors (ICNS8)
  • Place of Presentation: Jeju, Korea
• [Presentation] Step-graded Interlayers for the improvement of MOVPE InxGa1-xN (x ~ 0. 4) Epi-layer Quality (2009)
  • Author(s): Md. R. Islam, Y. Ohmura, A. Hashimoto, A. Yamamoto, K. Kinoshita, Y. Koji
  • Organizer: Abstract book of 8th Int'l Conference of Nitride Semiconductors (ICNS8)
  • Place of Presentation: Jeju, Korea
• [Presentation] RF-MBE Growth on Vicinal Sapphire Substrate using Migration Enhanced Epitaxy (2009)
  • Author(s): M. Yamamoto, Ting-Ting Kang, M. Tanaka, A. Hashimoto, A. Yamamoto
  • Organizer: Abstract book of 8th Int'l Conference of Nitride Semiconductors (ICNS8)
  • Place of Presentation: Jeju, Korea
• [Presentation] A Breakthrough Toward Wafer-size bi-layer Graphene Transfer (2009)
  • Author(s): A. Hashimoto, H. Terasaki, K. Morita, S. Tanaka, H. Hibino
  • Organizer: Abstracts of MRS 2009 Fall Meeting
  • Place of Presentation: Boston, USA
• [Presentation] Double resonant Raman spectra of a large area epitaxial graphene transferred from vicinal Si-face SiC substrate (2009)
  • Author(s): A. Hashimoto, H. Terasaki, S. Tanaka
  • Organizer: Delegate Manual of 20th Europian Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides (DIAMOND2009)
  • Place of Presentation: Athens, Greek
• [Presentation] RF-MBE InN Growth on Step-ordered Off-angle Sapphire Substrates (2008)
  • Author(s): Akihiro Hashimoto
  • Organizer: Int. Workshop on Nitride Semiconductor 2008 (IWN2008), WS2a
  • Place of Presentation: Montreux, Switzerland
  • Year and Date: 2008-10-06
• [Presentation] Step-flow Growth in Solid C_<60> Epitaχy on Graphene (2008)
  • Author(s): Akihiro Hashimoto
  • Organizer: 19th Europian Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, a Nitrides, (DIAMOND2008)
  • Place of Presentation: Sitges, Spain
  • Year and Date: 2008-09-11
• [Presentation] MBE法によるグラフェン/傾斜SiC基板上固相C60薄膜のステップフロー成長 (2008)
  • Author(s): 橋本明弘
  • Organizer: 第69回応用物理学会学術講演会, 5a-X-1
  • Place of Presentation: 中部大学、愛知
  • Year and Date: 2008-09-05
• [Presentation] RF-MBE Growth of In-rich InGaN for Tandem Solar Cell (2008)
  • Author(s): Akihiro Hashimoto
  • Organizer: 15th Int'l Conference on Molecular BeamEpitaxy (MBE2008), MP28
  • Place of Presentation: Vancouver, Canada
  • Year and Date: 2008-09-04
• [Presentation] A Study of Mg-doping Behavior of RF-MBE InN using Homo-junction Structure (2008)
  • Author(s): Akihiro Hashimoto
  • Organizer: 15th Int'l Conference on Molecxilar Beam Epitaxy (MBE2008), MP25
  • Place of Presentation: Vancouver, Canada
  • Year and Date: 2008-09-04
• [Presentation] RF-MBE法による高品質InN 用のテンプレートとしての微傾斜サファイア基板上のAIN成長 (2008)
  • Author(s): 橋本明弘
  • Organizer: 第69回応用物理学会学術講演会, 4a-CA-8
  • Place of Presentation: 中部大学、愛知
  • Year and Date: 2008-09-04
• [Presentation] 傾斜SiC基板上エピクキシャルグラフェンの表面欠陥近傍の顕微ラマン分光測定 (2008)
  • Author(s): 橋本明弘
  • Organizer: 第69回応用物理学会学術講演会, 2p-R-10
  • Place of Presentation: 中部大学、愛知
  • Year and Date: 2008-09-02
• [Presentation] Direct Measurements of Van der Waals Force in HOPG (2008)
  • Author(s): Akihiro Hashimoto
  • Organizer: 2^<nd> Conference on New Diamond & Nano Carbons 2008 (NDNC2008), P1-064
  • Place of Presentation: Taipei, Taiwan
  • Year and Date: 2008-05-27
• [Presentation] Electron Beam Irradiation Effect for Solid C_<60> Epitaxy on Graphene (2008)
  • Author(s): Akihiro Hashimoto
  • Organizer: 2^<nd> Conference on New Diamond & Nano Carbons 2008 (NDNC2008), Oral B4-002
  • Place of Presentation: Taipei, Taiwan
  • Year and Date: 2008-05-26
• [Presentation] Graphene/SiC上の固相C60薄膜のファンデルワールスエピタキシー (2008)
  • Author(s): 橋本 明弘
  • Organizer: 第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学理工学部、船橋
  • Year and Date: 2008-03-27
• [Presentation] Graphenen層の分子間力測定 (2008)
  • Author(s): 橋本 明弘
  • Organizer: 第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学理工学部、船橋
  • Year and Date: 2008-03-27
• [Presentation] A breakthrough toward wafer-size bi-layer graphene transfer (2008)
  • Author(s): A. Hashimoto, H. Terasaki, K. Morita, H. Hibino, S. Tanaka
  • Organizer: Technical Digest of International Conference on Silicon Carbide & Related Materials 2009
  • Place of Presentation: Nurnberg, Germany
• [Presentation] RF-MBE InN Growth on Step-ordered Off-angle Sapphire Substrates (2008)
  • Author(s): A. Hashimoto, H. Terasaki, S. Tanaka
  • Organizer: Technical Digests of Int. Workshop on Nitride Semiconductor 2008 (IWN2008)
  • Place of Presentation: Montreux, Switzerland
• [Presentation] Step-flow Growth in Solid C60 Epitaxy on Graphene (2008)
  • Author(s): A. Hashimoto, H. Terasaki, S. Tanaka
  • Organizer: Delegate Manual of 19th Europian Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides (DIAMOND2008)
  • Place of Presentation: Sitges, Spain
• [Presentation] RF-MBE Growth of In-rich InGaN for Tandem Solar Cell (2008)
  • Author(s): A. Hashimoto, K. Iwao H. Hohnoki, A. Yamamoto
  • Organizer: Abstract Book of 15th Int'l Conference on Molecular Beam Epitaxy (MBE2008)
  • Place of Presentation: Vancouver, Canada
• [Presentation] A Study of Mg-doping Behaviour of RF-MBE InN using Homo-junction Structure (2008)
  • Author(s): A. Hashi- moto, K. Iwao H. Honoki, A. Yamamoto
  • Organizer: Abstract Book of 15th Int'l Conference on Molecular Beam Epitaxy (MBE2008)
  • Place of Presentation: Vancouver, Canada
• [Presentation] Direct Measurements of Van der Waals Force in HOPG H. Terasaki (2008)
  • Author(s): A. Yamamoto, T. Honda, A. Hashi-moto
  • Organizer: Program Book of 2nd Conference on New Diamond & Nano Carbons 2008 (NDNC2008)
  • Place of Presentation: Taipei, Taiwan
• [Presentation] Electron Beam Irradiation Effect for Solid C60 Epitaxy on Graphene (2008)
  • Author(s): A. Hashimoto, H. Terasaki, A. Yamamoto, S. Tanaka
  • Organizer: Program Book of 2nd Conference on New Diamond & Nano Carbons 2008 (NDNC2008)
  • Place of Presentation: Taipei, Taiwan
• [Presentation] RF-MBE Growth of In-rich InGaN for Tandem Solar Cell (2007)
  • Author(s): Akihiro Hashimoto
  • Organizer: 17th International Photovoltaic Science and Engineering Conference(PVSEC-17)
  • Place of Presentation: 福岡コンベンションセンター,福岡
  • Year and Date: 2007-12-05
• [Presentation] A trade-off relation between tilt and twist angle fluctuations in InN grown by RF-MBE (2007)
  • Author(s): Akihiro Hashimoto
  • Organizer: 7th International Conference of Nitride Semiconductors(ICNS-7)
  • Place of Presentation: Las Vegas, USA
  • Year and Date: 2007-09-18
• [Presentation] Mosaicity control of In-rich InGaN in RF-MBE growth by template technique (2007)
  • Author(s): Akihiro Hashimoto
  • Organizer: 7th International Conference of Nitride Semiconductors(ICNS-7)
  • Place of Presentation: Las Vegas, USA
  • Year and Date: 2007-09-18
• [Presentation] New nitridation technique for mosaicity Control in RF-MBE InN Growth (2007)
  • Author(s): Akihiro Hashimoto
  • Organizer: 7th International Conference of Nitride Semiconductors(ICNS-7)
  • Place of Presentation: Las Vegas, USA
  • Year and Date: 2007-09-18
• [Presentation] A new formation method of large area grapheme on SiO2/Si substrate (2007)
  • Author(s): Akihiro Hashimoto
  • Organizer: 18th European conference on diamond, diamond-like materials, carbon nanotubes, and nitrides
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2007-09-13
• [Presentation] Van der Waals Epitaxy of Solid Fullerene on Graphene Sheet (2007)
  • Author(s): Akihiro Hashimoto
  • Organizer: 18th European conference on diamond, diamond-like materials, carbon nanotubes, and nitrides
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2007-09-12
• [Presentation] RF-MBE法で成長したInNにおけるサファイア基板二段階窒化の効果 (2007)
  • Author(s): 橋本 明弘
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学、札幌
  • Year and Date: 2007-09-06
• [Presentation] SiO2/Si基板上への大面積グラフェン形成法 (2007)
  • Author(s): 橋本 明弘
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学、札幌
  • Year and Date: 2007-09-06
• [Presentation] RF-MBE Growth of In-rich InGaN for Tandem Solar Cell (2007)
  • Author(s): A. Hashimoto, K. Iwao, A. Yamamoto
  • Organizer: Extended Abstract of 17th Int'l Photovoltaic Science and Engineering Conference (PVSEC-17)
  • Place of Presentation: Fukuoka, Japan
• [Presentation] MOVPE Growth and Mg-doping of InxGa1-xN (x~0. 4) for Tandem Solar Cell (2007)
  • Author(s): M. Horie, A. Hashimoto, A. Yamamoto
  • Organizer: Extended Abstract of 17th Int'l Photovoltaic Science and Engineering Conference (PVSEC-17)
  • Place of Presentation: Fukuoka, Japan
• [Presentation] MOVPE Growth of In-rich InAlN for InAlN Tandem Solar Cell (2007)
  • Author(s): Y. Houchin, A. Hashimoto, A. Yamamoto
  • Organizer: Extended Abstract of 17th Int'l Photovoltaic Science and Engineering Conference (PVSEC-17)
  • Place of Presentation: Fukuoka, Japan
• [Presentation] Transfer of Large Area Graphene Sheets from Carbonized 6H-SiC by a Direct Bonding Technique (2007)
  • Author(s): A. Hashimoto, K. Iwao, S. Tanaka, A. Yama- moto
  • Organizer: Abstracts of MRS 2007 Fall Meeting
  • Place of Presentation: Boston, USA
• [Presentation] Marked Improvements in Electrical and Optical Properties for MOVPE InN Annealed at a Low Temperature (~300 C) in O2 Atmosphere (2007)
  • Author(s): Y. Nagai, K. Sugita, A. Hashimoto, A. Yamamoto
  • Organizer: Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
  • Place of Presentation: Las Vegas, USA
• [Presentation] New Nitridation Technique for Mosaicity Control in RF-MBE InN Growth (2007)
  • Author(s): K. Iwao, A. Yamamoto, A. Hashimoto
  • Organizer: Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
  • Place of Presentation: Las Vegas, USA
• [Presentation] Mosaicity Control of In-rich InGaN in RF-MBE Growth by Template Technique (2007)
  • Author(s): K. Iwao, Y. Yamada, A. Yamamoto, A. Hashimoto
  • Organizer: Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
  • Place of Presentation: Las Vegas, USA
• [Presentation] A Trade-off Relation between Tilt and Twist Angle Fluctuations in InN Grown by RF-MBE (2007)
  • Author(s): A. Hashimoto, A. Yamamoto, K. Iwao
  • Organizer: Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
  • Place of Presentation: Las Vegas, USA
• [Presentation] Atmospheric-Pressure MOVPE Growth of In-Rich InAlN (2007)
  • Author(s): Y. Houchin, A. Hashimoto, A. Yamamoto
  • Organizer: Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
  • Place of Presentation: Las Vegas, USA
• [Presentation] The Importanve of Reducing Strain for the Improvement of Crystalline Quality of MOVPE InN (2007)
  • Author(s): K. Sugita, A. Hashimoto, A. Yamamoto
  • Organizer: Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
  • Place of Presentation: Las Vegas, USA
• [Presentation] Etching and Optical Deterioration of Nitrogen-Fa Face of Wultzite InN in NH3 Ambient (2007)
  • Author(s): A. Yamamoto, K. Sugita, Y. Nagai, A. Hashimoto
  • Organizer: Abstract book of 7th Int'l Conference of Nitride Semiconductors (ICNS7)
  • Place of Presentation: Las Vegas, USA
• [Presentation] A New Formation Method of Large Area Graphene on SiO2/Si Substrate (2007)
  • Author(s): A. Hashimoto, K. Iwao, S. Tanaka, A. Yamamoto
  • Organizer: Abstract book of The 18th Europian Diamond and Related Mterials
  • Place of Presentation: Berlin
• [Presentation] Van der Waals Epitaxy of Solid Fullerene on Graphene Sheet (2007)
  • Author(s): A. Hashimoto, K. Iwao, S. Tanaka, A. Yamamoto
  • Organizer: Abstract book of The 18th Europian Diamond and Related Mterials
  • Place of Presentation: Berlin
• [Presentation] GaInNAs Epitaxy for High Efficient Tandem Solar Cell by RF-MBE (Invited) (2007)
  • Author(s): A. Hashimoto
  • Organizer: Abstracts of MBE-Taiwan 2007
  • Place of Presentation: Kaohsiung, Taiwan
• [Presentation] Transfer of Large Area Graphene Sheets from Carbonized 6H-SiC by a Direct Bonding Technique (2007)
  • Author(s): Akihiro Hashimoto
  • Organizer: Material Research Society(MRS)2007 Fall Meeting
  • Place of Presentation: Boston, USA
• [Book] 高効率太陽電池の開発と応用 (2009)
  • Author(s): 橋本明弘
  • Publisher: シー・エム・シー出版
• [Book] 高効率太陽電池の開発と応用 (第4章多接合太陽電池、第2節化合物半導体のエピタキシャル成長、pp49～pp66) (2009)
  • Author(s): 橋本明弘, 他(分担執筆)
  • Total Pages: 18
  • Publisher: シー・エム・シー出版
• [Remarks]
  • URL: http://www.eng.u-fukui.ac.jp/outline/master.html#Electrical_and_Electronics
• [Patent(Industrial Property Rights)] グラフェンシートの製造方法 (2007)
  • Inventor(s): 橋本明弘、田中悟
  • Industrial Property Rights Holder: 福井大学
  • Filing Date: 2007-09-10
• [Patent(Industrial Property Rights)] グラフェンシートの製造方法 (2007)
  • Inventor(s): 橋本明弘
  • Industrial Property Rights Holder: 福井大学
  • Industrial Property Number: 2007-261188
  • Filing Date: 2007-10-04
• [Patent(Industrial Property Rights)] グラフェンシートの製造方法 (2007)
  • Inventor(s): 橋本明弘
  • Industrial Property Rights Holder: 福井大学
  • Industrial Property Number: 2007-233535
  • Filing Date: 2007-09-10