| Budget Amount *help |
¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000)
Fiscal Year 2009: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2008: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2007: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
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| Research Abstract |
Recently, a large resistance change by the application of an electric pulse was observed at room temperature in metal oxides such as Pr_<1-x>Ca_xMnO_3 (PCMO). This effect provides a possibility of a next-generation nonvolatile memory, called resistance random access memory (ReRAM). In this work, the composition control based on the in situ spectroscopic monitoring was developed to improve the reproducibility of the resistance switching in the deposited PCMO films. The frequency response of complex impedance of the PCMO-based devices was measured to study the resistance switching mechanism. The electric-pulse-induced change of the impedance spectra suggested that the resistance switching in the PCMO-based devices was due to the resistance change in both the grain bulk and the interface between the film and the electrode.
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