Noncontact Temperature Measurement During Rapid Thermal Annealing and Investigation on Impurity Activation
Project/Area Number |
19360187
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Measurement engineering
|
Research Institution | Hiroshima University |
Principal Investigator |
HIGASHI Seiichiro Hiroshima University, 大学院・先端物質科学研究科, 准教授 (30363047)
|
Project Period (FY) |
2007 – 2009
|
Project Status |
Completed (Fiscal Year 2009)
|
Budget Amount *help |
¥18,200,000 (Direct Cost: ¥14,000,000、Indirect Cost: ¥4,200,000)
Fiscal Year 2009: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2008: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2007: ¥8,710,000 (Direct Cost: ¥6,700,000、Indirect Cost: ¥2,010,000)
|
Keywords | 計測システム / 超々大規模集積回路 / 薄膜トランジスタ / 不純物活性化 / 極浅接合 / 急速熱処理 / 非接触温度測定 |
Research Abstract |
Activation of As and B atoms in Silicon wafer surface by thermal plasma jet (TPJ) annealing has been investigated. The sheet resistance of B-implanted samples saturates at an annealing temperature higher than 1400K, while it is 1000K in the case of As-implanted samples. In the case of As, not only the annealing temperature, but faster heating and cooling rates play important role to achieve efficient activation.
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Report
(4 results)
Research Products
(56 results)
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[Book] 薄膜トランジスタ(薄膜材料デバイス研究会編)2008
Author(s)
浦岡行治,神谷利夫,木村睦,佐野直樹,鮫島俊之,清水耕作,竹知和重,中村雅一,東清一郎,古田守,堀田将
Publisher
コロナ社
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