| Budget Amount *help |
¥18,200,000 (Direct Cost: ¥14,000,000、Indirect Cost: ¥4,200,000)
Fiscal Year 2009: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2008: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2007: ¥8,710,000 (Direct Cost: ¥6,700,000、Indirect Cost: ¥2,010,000)
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| Research Abstract |
Activation of As and B atoms in Silicon wafer surface by thermal plasma jet (TPJ) annealing has been investigated. The sheet resistance of B-implanted samples saturates at an annealing temperature higher than 1400K, while it is 1000K in the case of As-implanted samples. In the case of As, not only the annealing temperature, but faster heating and cooling rates play important role to achieve efficient activation.
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