Study of insulator/Si interfaces and their stress using a monoenergetic positron beam

• Project/Area Number: 19360285
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Physical properties of metals
• Research Institution: University of Tsukuba
• Principal Investigator: UEDONO Akira University of Tsukuba, 大学院・数理物質科学研究科, 教授 (20213374)
• Project Period (FY): 2007 – 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥14,560,000 (Direct Cost: ¥11,200,000、Indirect Cost: ¥3,360,000); Fiscal Year 2010: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000); Fiscal Year 2009: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000); Fiscal Year 2008: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000); Fiscal Year 2007: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
• Keywords: 陽電子消滅 / 低速陽電子ビーム / 絶縁膜 / 低速陽電子 / 絶縁膜界面

Research Abstract

We developed an analysis method for metal oxides/semiconductor structures based on the positron annihilation technique to study device processes. Using monoenergetic positron beams, XPS, and measurements of the electric properties of samples, we characterized TiN/SiO_2/Si HfSiO_x/Si CVD-SiO_2, and SiO_2 to study the relationship between point defects and the electric properties. We also studied low-k materials and barrier metals in Cu/low-k structures.

Research Products

• [Journal Article] The role of positron annihilation lifetime studies and nuclear sensors for characterizing porous materials (2011)
  • Author(s): E.Mume, et al.
  • Journal Title: J.Phys. : Conf.Ser. Volume: 262
  • Peer Reviewed
• [Journal Article] Imaging of the distribution of average positron lifetimes by using a positron probe microanalyzer (2011)
  • Author(s): N.Oshima, et al.
  • Journal Title: J.Phys. : Conf.Ser. Volume: 262
  • Peer Reviewed
• [Journal Article] Application of positron annihilation technique to front and backend processes for modern LSI devices (2011)
  • Author(s): A.Uedono, et al.
  • Journal Title: J.Phys. : Conf.Ser. Volume: 262
  • Peer Reviewed
• [Journal Article] Vacancy-boron complexes in plasma immersion ion-implanted Si probed by a monoenergetic positron beam (2010)
  • Author(s): A.Uedono, K.Tsutsui, S.Ishibashi, H.Watanabe, S.Kubota, Y.Nakagawa, B.Mizuno, T.Hattori, H.Iwai
  • Journal Title: Jpn.J.Appl.Phys. 49
  • NAID: 40017116081
  • Peer Reviewed
• [Journal Article] Epitaxial DyScO_3 films as passivation layers suppress the diffusion of oxygen vacancies in SrTiO3 (2010)
  • Author(s): G.Yuan, K.Nishio, M.Lippmaa, A.Uedono
  • Journal Title: J.Phys.D : Appl.Phys. 43
  • Peer Reviewed
• [Journal Article] Vacancy-boron complexes in plasma immersion ion-implanted Si probed by a monoenergetic positron beam (2010)
  • Author(s): A.Uedono, et al.
  • Journal Title: Jpn.J.Appl.Phys. Volume: 49
  • NAID: 40017116081
  • Peer Reviewed
• [Journal Article] Epitaxial DySc03 films as passivation layers suppress the diffusion of oxygen vacancies in SrTi03 (2010)
  • Author(s): G.Yuan, et al.
  • Journal Title: J.Phys.D Volume: 43
  • Peer Reviewed
• [Journal Article] Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (10-1-1) GaN heteroepitaxial layers grown by met alorganic vapor phase epitaxy (2010)
  • Author(s): T.Onuma, et al.
  • Journal Title: Appl.Phys.Lett. Volume: 96
  • Peer Reviewed
• [Journal Article] Identification of extremely radiative nature of A1N by time-resolved photoluminescence (2010)
  • Author(s): T.Onuma, et al.
  • Journal Title: Appl.Phys.Lett. Volume: 96
  • Peer Reviewed
• [Journal Article] Effect of V/III flux ratio on luminescence properties and defect formation of Er-doped GaN (2010)
  • Author(s): S.Chen, et al.
  • Journal Title: Appl.Phys.Lett. Volume: 96
  • Peer Reviewed
• [Journal Article] 陽電子消滅の基礎と最先端 (2010)
  • Author(s): 上殿明良, 他
  • Journal Title: 応用物理学会結晶工学分科会第15回結晶工学セミナーテキスト Pages: 1-8
• [Journal Article] 低速陽電子ビームを用いた配線構造中のLow-k膜及びCu配線の欠陥評価 (2010)
  • Author(s): 上殿明良, 他
  • Journal Title: 電子デバイスにおける原子輸送・応力問題 第15回研究会予稿集 Pages: 31-34
• [Journal Article] Defect characterization of crystalline metal oxides and high-k films by means of positron annihilation (2010)
  • Author(s): A.Uedono, et al.
  • Journal Title: Proc.of 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Pages: 1498-1501
• [Journal Article] Damage characterization of low-k layers through Cu damascene process using monoenergetic positron beams (2010)
  • Author(s): A.Uedono, et al.
  • Journal Title: Proc.13th IEEE Int.Interconnect Tech.Conf.
  • Peer Reviewed
• [Journal Article] Vacancy-type defects in ultra-shallow junctions fabricated using plasma doping studied by positron annihilation (2010)
  • Author(s): A.Uedono, et al.
  • Journal Title: Proc.2010 Int.Workshop on Junction Technology Extended Abstracts Pages: 149-154
• [Journal Article] 陽電子消滅法を用いた材料解析-材料不良解析への応用- (2010)
  • Author(s): 上殿明良
  • Journal Title: SDM2009 190 Pages: 49-52
• [Journal Article] Characterization of low-k/Cu damascene structures using monoenergetic positron beams (2009)
  • Author(s): A.Uedono, N.Inoue, Y.Hayashi, K.Eguchi, T.Nakamura, Y.Hirose, M.Yoshimaru, N.Oshima, T.Ohdaira, R.Suzuki
  • Journal Title: Jpn.J.Appl.Phys. 48
  • NAID: 40016890464
  • Peer Reviewed
• [Journal Article] Positron annihilation study on defects in HfSiON films deposited byelectron-beam evaporation (2009)
  • Author(s): G.Yuan, X.Lu, H.Ishiwara, A.Uedono
  • Journal Title: Jpn.J.Appl.Phys. 48
  • Peer Reviewed
• [Journal Article] Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films During Electrical Stress Application (2009)
  • Author(s): R.Hasunuma, C.Tamura, T.Nomura, Y.Kikuchi, K.Ohmori, M.Sato, A.Uedono, T.Chikyow, K.Shiraishi, K.Yamada, K.Yamabe
  • Journal Title: Proc.IEEE Int.Electron Device Meeting (IEDM) Pages: 131-134
  • Peer Reviewed
• [Journal Article] A study on vacancy-type defects in the electroless Cu measured with a monoenergetic positron beam (2009)
  • Author(s): K.Yamanaka, A.Uedono
  • Journal Title: Scripta Materialia 61 Pages: 8-11
  • Peer Reviewed
• [Journal Article] Characterization of low-k SiOCH layers in fine-pitch Cu-damascene interconnects by monoenergetic positron beams (2009)
  • Author(s): A.Uedono, N.Inoue, Y.Hayashi, K.Eguchi, T.Nakamura, M.Yoshimaru, N.Oshima, T.Ohdaira, R.Suzuki
  • Journal Title: Proc.12tn IEEE 2009 Int.Interconnect Tech. Pages: 75-77
  • Peer Reviewed
• [Journal Article] Characterization of low-k/Cu damascene structures using monoenergetic positron beams (2009)
  • Author(s): A. Uedono, N. Inoue, Y. Hayashi, K. Eguchi, T. Nakamura, Y. Hirose, M. Yoshimaru, N. Oshima, T. Ohdaira, R. Suzuki
  • Journal Title: Jpn. J. Appl. Phys. 48
  • NAID: 40016890464
  • Peer Reviewed
• [Journal Article] Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films During Electrical Stress Application (2009)
  • Author(s): R. Hasunuma, C. Tamura, T. Nomura, Y. Kikuchi, K. Ohmori, M. Sato, A. Uedono, T. Chikyow, K. Shiraishi, K. Yamada, K. Yamabe
  • Journal Title: Proc. IEEE Int. Electron Device Meeting (IEDM) Pages: 131-134
  • Peer Reviewed
• [Journal Article] Characterization of low-k SiOCH layers in fine-pitch Cu-damascene interconnects by monoenergetic positron beams (2009)
  • Author(s): A. Uedono, N. Inoue, Y. Hayashi, K. Eguchi, T. Nakamura, M. Yoshimaru, N. Oshima, T. Ohdaira, R. Suzuki
  • Journal Title: Proc. 12tn IEEE 2009 Int. Interconnect Tech. Pages: 75-77
  • Peer Reviewed
• [Journal Article] Characterization of low-k/Cu damascene structures using monoenergetic positron beams (2009)
  • Author(s): 上殿明良, et al.
  • Journal Title: Jpn.J.Appl.Phys. 48
  • NAID: 40016890464
  • Peer Reviewed
• [Journal Article] Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films During Electrical Stress Application (2009)
  • Author(s): R.Hasunuma, et al.
  • Journal Title: Proc.IEEE Int.Electron Devices Meeting 2009 Pages: 131-134
  • Peer Reviewed
• [Journal Article] Novel low-k SiOC(k=2.4)with superior tolerance to direct polish and ashing for advanced BEOL integration (2009)
  • Author(s): N.Asami, et al.
  • Journal Title: Proc.12tn IEEE 2009 Int.Interconnect Tech. 12 Pages: 161-163
  • Peer Reviewed
• [Journal Article] Characterization of low-k SiOCH layers in fine-pitch Cu-damascene interconnects by monoenergetic positron beams (2009)
  • Author(s): 上殿明良, et al.
  • Journal Title: Proc.12tn IEEE 2009 Int.Interconnect Tech. 12 Pages: 75-77
  • Peer Reviewed
• [Journal Article] Development of positron microbeam in AIST (2009)
  • Author(s): N. Oshima
  • Journal Title: Materials Science Forum 607 Pages: 238-242
  • Peer Reviewed
• [Journal Article] 高強度陽電子ビームを利用した陽電子プローブマイクロアナラィザーの開発 (2008)
  • Author(s): 大島永康
  • Journal Title: 放射科学 85 Pages: 39-44
  • Peer Reviewed
• [Journal Article] Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams (2007)
  • Author(s): A. Uedono
  • Journal Title: J. Appl. Phys. 102
  • Peer Reviewed
• [Journal Article] Annealing properties of open volumes in strained SiN films studied by monoenergetic positron beams (2007)
  • Author(s): A. Uedono
  • Journal Title: J. App. Phys. 102
  • Peer Reviewed
• [Journal Article] Impact of high temperature annealing on traps in physical-vapor-deposited-TiN/SiO_2/Si analyzed by positron annihilation (2007)
  • Author(s): T. Matsuki
  • Journal Title: Jpn. J. Appl. Phys 46
  • Peer Reviewed
• [Presentation] Point defects in GaN and related group-III nitrides studied by means of positron annihilation (2011)
  • Author(s): A.Uedono
  • Organizer: SPIE Photonics West
  • Place of Presentation: California, USA(招待講演)
  • Year and Date: 2011-01-25
• [Presentation] 低速陽電子ビームを用いた材料の空孔型欠陥検出と評価 (2010)
  • Author(s): 上殿明良,石橋章司,大島永康,大平俊行,鈴木良一
  • Organizer: 応用物理学会 薄膜・表面物理分科会 第11回「イオンビームによる表面・界面解析」特別研究会
  • Place of Presentation: 名古屋 名城大学
  • Year and Date: 2010-12-03
• [Presentation] 低速陽電子ビームを用いた材料の空孔型欠陥検出と評価 (2010)
  • Author(s): 上殿明良
  • Organizer: 応用物理学会薄膜・表面物理分科会
  • Place of Presentation: 名城大学(招待講演)
  • Year and Date: 2010-12-03
• [Presentation] 陽電子消滅法によるCu(In,Ga)Se_2薄膜太陽電池の欠陥評価 (2010)
  • Author(s): 天神林和樹
  • Organizer: 京都大学原子炉実験所専門研究会
  • Place of Presentation: 京都大学原子炉実験所
  • Year and Date: 2010-11-27
• [Presentation] PPMAによる塑性変形した高純度鉄試料中の欠陥分布評価 (2010)
  • Author(s): 窪田翔二
  • Organizer: 京都大学原子炉実験所専門研究会
  • Place of Presentation: 京都大学原子炉実験所
  • Year and Date: 2010-11-27
• [Presentation] 低速陽電子ビームの大気取り出し技術の開発 (2010)
  • Author(s): 渡邉宏理
  • Organizer: 京都大学原子炉実験所専門研究会
  • Place of Presentation: 京都大学原子炉実験所
  • Year and Date: 2010-11-27
• [Presentation] 陽電子の基礎と最先端 (2010)
  • Author(s): 上殿明良,石橋章司,大島永康,大平俊行,鈴木良一
  • Organizer: 第15回結晶工学セミナー「物理・化学分析の最先端技術を基礎から理解する」-究極の分析を目指して-
  • Place of Presentation: 東京学習院大学
  • Year and Date: 2010-11-18
• [Presentation] 陽電子の基礎と最先端 (2010)
  • Author(s): 上殿明良
  • Organizer: 第15回結晶工学セミナー
  • Place of Presentation: 学習院大学(招待講演)
  • Year and Date: 2010-11-18
• [Presentation] Defect characterization of crystalline metal oxides and high-k films by means of positron annihilation (2010)
  • Author(s): A.Uedono, S.Ishibashi, N.Oshima, T.Ohdaira, R.Suzuki
  • Organizer: 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
  • Place of Presentation: Shanghai, China
  • Year and Date: 2010-11-02
• [Presentation] Defect characterization of crystalline metal oxides and high-k films by means of positron annihilation (2010)
  • Author(s): A.Uedono
  • Organizer: 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
  • Place of Presentation: Shanghai, China(招待講演)
  • Year and Date: 2010-11-02
• [Presentation] Structure-modification model of porogen-based porous SiOC film with UV curing (2010)
  • Author(s): Y.Oka, A.Uedono, K.Goto, Y.Hirose, M.Matsuura, M.Fujisawa, K.Asai
  • Organizer: Advanced Metallization Conference 2010
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-10-20
• [Presentation] Structure-modification model of porogen-based porous SiOC film with UV curing (2010)
  • Author(s): Y.Oka
  • Organizer: Advanced Metallization Conference 2010
  • Place of Presentation: University of Tokyo, Tokyo
  • Year and Date: 2010-10-20
• [Presentation] Time-resolved Photoluminescence and Time-resolved Cathodoluminescence Studies on AIN Epilayers Grown by Low-pressure Metalorganic Vapor Phase Epitaxy (2010)
  • Author(s): S.F.Chichibu
  • Organizer: Int.Workshop on Nitride Semiconductors
  • Place of Presentation: Florida, U.S.A.
  • Year and Date: 2010-09-23
• [Presentation] 陽電子消滅法によるCu(In, Ga)Se_2薄膜太陽電池の欠陥評価 (2010)
  • Author(s): 天神林和樹
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-17
• [Presentation] 陽電子消滅によるAIGaN中の欠陥評価 (2010)
  • Author(s): 上殿明良
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学(招待講演)
  • Year and Date: 2010-09-15
• [Presentation] Application of positron annihilation technique to front and backend processes for modern LSI devices (2010)
  • Author(s): A.Uedono, S.Ishibashi, N.Oshima, T.Ohdaira, R Suzuki
  • Organizer: 12th Int.Workshop on Slow Positron Beam Technique
  • Place of Presentation: Magnetic Island, State of Queensland, Australia
  • Year and Date: 2010-08-01
• [Presentation] Application of positron annihilation technique to front and backend processes for modern LSI devices (2010)
  • Author(s): A.Uedono
  • Organizer: 12th Int.Workshop on Slow Positron Beam Technique
  • Place of Presentation: Magnetic Island, State of Queensland, Australia(招待講演)
  • Year and Date: 2010-08-01
• [Presentation] 低速陽電子ビームを用いた配線構造中のLow-k膜及びCu 配線の欠陥評価 (2010)
  • Author(s): 上殿明良,井上尚也,林喜宏,江口和弘,中村友二,廣瀬幸範,吉丸正樹,大島永康,大平俊行,鈴木良一
  • Organizer: 第15回電子デバイスにおける原子輸送・応力問題研究会
  • Place of Presentation: 横浜市 白山ハイテクパーク
  • Year and Date: 2010-07-23
• [Presentation] 低速陽電子ビームを用いた配線構造中のLow-k膜及びCu配線の欠陥評価 (2010)
  • Author(s): 上殿明良
  • Organizer: 第15回電子デバイスにおける原子輸送・応力問題研究会
  • Place of Presentation: 白山ハイテクパーク(招待講演)
  • Year and Date: 2010-07-23
• [Presentation] 延性破壊した高純度鉄試料の陽電子寿命画像による評価 (2010)
  • Author(s): 大島永康
  • Organizer: 第47回アイソトープ・放射線研究発表会
  • Place of Presentation: 日本科学未来館
  • Year and Date: 2010-07-08
• [Presentation] Defect Characterization of Cu(In1・xGax)Se_2 thin film (2010)
  • Author(s): M.M.Islam
  • Organizer: 第7回次世代の太陽光発電シンポジウム
  • Place of Presentation: 北九州国際会議場
  • Year and Date: 2010-07-08
• [Presentation] Defect characterization of Cu(In, Ga)Se_2 thin film with varying Ga/III ratio (2010)
  • Author(s): M.M.Islam
  • Organizer: E-MRS 2010 Spring Meeting
  • Place of Presentation: Strasbourg, France
  • Year and Date: 2010-06-11
• [Presentation] Damage characterization of low-k layers through Cu damascene process using monoenergetic positron beams (2010)
  • Author(s): A.Uedono, N.Inoue, Y.Hayashi, K.Eguchi, T.Nakamura, Y.Hirose, M.Yoshimaru, N.Oshima, T.Ohdaira, R.Suzuki
  • Organizer: 2010 IEEE Int.Interconnect Technology Conf.
  • Place of Presentation: Hyatt Regency San Francisco Airport Hotel, Burlingame, California, USA
  • Year and Date: 2010-06-08
• [Presentation] Damage characterization of low-k layers through Cu damascene process using monoenergetic positron beams (2010)
  • Author(s): A.Uedono
  • Organizer: 2010 IEEE Int.Interconnect Technology Conf.
  • Place of Presentation: California, USA
  • Year and Date: 2010-06-08
• [Presentation] 陽電子プローブマイクロアナライザによる延伸鉄試料の欠陥分布評価 (2010)
  • Author(s): 大島永康
  • Organizer: 日本顕微鏡学会第66回学術講演会
  • Place of Presentation: 名古屋国際会議場
  • Year and Date: 2010-05-23
• [Presentation] AIN及び高AlNモル分率A1_xGa_(1・x)Nエピタキシャル層の時間分解分光計測 (2010)
  • Author(s): 秩父重英
  • Organizer: 応用電子物性分科会研究例会
  • Place of Presentation: 大阪大学
  • Year and Date: 2010-05-21
• [Presentation] Vacancy-type defects in ultra-shallow junctions fabricated using plasma doping studied by positron annihilation (2010)
  • Author(s): A.Uedono, K.Tsutsui, S.Ishibashi, H.Watanabe, S.Kubota, K.Tenjinbayashi1, Y.Nakagawa, B.Mizuno, T.Hattori, H.Iwai
  • Organizer: 10th Int.Workshop on Junction Technology
  • Place of Presentation: FuXuan Hotel at Fundan University, FuXuan Hotel, Shanghai, China
  • Year and Date: 2010-05-11
• [Presentation] Vacancy-type defects in ultra-shallow junctions fabricated using plasma doping studied by positron annihilation (2010)
  • Author(s): A.Uedono
  • Organizer: 10th Int.Workshop on Junction Technology
  • Place of Presentation: Shanghai, China(招待講演)
  • Year and Date: 2010-05-11
• [Presentation] Degradation in HfSiON film induced by electrical stress application (2010)
  • Author(s): R.Hasunuma, C.Tamura, T.Nomura, Y.Kikuchi, K.Ohmori, M.Sato, A.Uedono, T.Chikyow, K.Shiraishi, K.Yamada, K.Yamabe
  • Organizer: 217th Electrochemical Society Meeting
  • Place of Presentation: Hyatt Regency Vancouver and The Fairmont Hotel Vancouver, Vancouver, Canada
  • Year and Date: 2010-04-27
• [Presentation] Degradation in HfSiON film induced by electrical stress application (2010)
  • Author(s): R.Hasunuma
  • Organizer: 217th Electrochemical Society Meeting
  • Place of Presentation: Vancouver, Canada
  • Year and Date: 2010-04-27
• [Presentation] 低速陽電子ビームを用いたCu/Low-k配線構造中の欠陥検出 (2010)
  • Author(s): 上殿明良,井上尚也,林喜宏,江口和弘,中村友二,廣瀬幸範,吉丸正樹,大島永康,大平俊行,鈴木良一
  • Organizer: 配線・実装技術と関連材料技術,
  • Place of Presentation: 機械振興会館 東京
  • Year and Date: 2010-02-05
• [Presentation] 低速陽電子ビームを用いたCu/Low-k配線構造中の欠陥検出 (2010)
  • Author(s): 上殿明良, 井上尚也, 林喜宏, 江口和弘, 中村友二, 廣瀬幸範, 吉丸正樹, 大島永康, 大平俊行, 鈴木良一
  • Organizer: 配線・実装技術と関連材料技術
  • Place of Presentation: 機械振興会館 東京
  • Year and Date: 2010-02-05
• [Presentation] 熱処理によるCVD-SiO_2の緻密化と圧縮応力緩和 (2010)
  • Author(s): 染谷満, 他
  • Organizer: 応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会-材料・プロセス・評価の物理-」(第15回研究会)
  • Place of Presentation: 東レ総合研修センター静岡
• [Presentation] Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films During Electrical Stress Application (2009)
  • Author(s): R.Hasunuma, et al.
  • Organizer: 2009 IEEE Int.Electron Devices Meeting
  • Place of Presentation: Hilton Baltimore, Baltimore. MD, USA
  • Year and Date: 2009-12-07
• [Presentation] Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films During Electrical Stress Application (2009)
  • Author(s): R.Hasunuma, C.Tamura, T.Nomura, Y.Kikuchi, K.Ohmori, M.Sato, A.Uedono, T.Chikyow, K.Shiraishi, K.Yamada, K.Yamabe
  • Organizer: 2009 IEEE Int.Electron Devices Meeting
  • Place of Presentation: Hilton Baltimore, Baltimore, MD, USA
• [Presentation] 陽電子消滅法を用いた材料解析-材料不良解析への応用- (2009)
  • Author(s): 上殿明良
  • Organizer: X線分析研究懇談会
  • Place of Presentation: 大阪市立大学
• [Presentation] Characterization of low-k SiOCH layers in fine-pitch Cu-damascene interconnects by monoenergetic positron beams (2009)
  • Author(s): A.Uedono, N.Inoue, Y.Hayashi, K.Eguchi, T.Nakamura, M.Yoshimaru, N.Oshima, T.Ohdaira, R.Suzuki
  • Organizer: 12tn IEEE 2009 Int.Interconnect Tech.
  • Place of Presentation: Royton Sapporo Hotel, Hokkaido, Japan
• [Presentation] Novel low-k SiOC (k=2.4) with superior tolerance to direct polish and ashing for advanced BEOL integration (2009)
  • Author(s): N.Asami, T.Owada, S.Akiyama, N.Ohara, Y.Iba, T.Kouno, H.Kudo, S.Takesako, T.Osada, T.Kirimura, H.Watatani, A.Uedono, Y.Nara, M.Kase
  • Organizer: 12tn IEEE 2009 Int.Interconnect Tech.
  • Place of Presentation: Royton Sapporo Hotel, Hokkaido, Japan
• [Presentation] Characterization of low-k SiOCH layers in fine-pitch Cu-damascene interconnects by monoenergetic positron beams (2009)
  • Author(s): 上殿明良, et al.
  • Organizer: 12tn IEEE 2009 Int.Interconnect Tech.
  • Place of Presentation: Royton Sapporo Hotel Hokkaido
• [Presentation] Novel low-k SiOC(k=2.4)with superior tolerance to direct polish and ashing for advanced BEOL integration (2009)
  • Author(s): N.Asami, et al.
  • Organizer: 12tn IEEE 2009 Int.Interconnect Tech.
  • Place of Presentation: Royton Sapporo Hotel Hokkaido
• [Presentation] 多結晶HfO2の電気伝導機構 (2008)
  • Author(s): 杉村聡太郎
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2008-08-02
• [Presentation] 陽電子プローブマイクロアナライザー(PPMA)を用いた二次元イメージング測定 (2008)
  • Author(s): 鳴海貴允
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2008-08-02
• [Presentation] 陽電子消滅寿命測定試験所間比較試験 (2008)
  • Author(s): 伊藤賢志
  • Organizer: 第45回アイソトープ・放射線研究発表会
  • Place of Presentation: 日本青年館(東京都)
  • Year and Date: 2008-07-02
• [Presentation] Development of Positron Microbeam in AIST (2008)
  • Author(s): N. Oshima
  • Organizer: 19th International Workshop on Positron and Positronium Chemistry
  • Place of Presentation: Wuhan, China
  • Year and Date: 2008-05-11
• [Presentation] Interlaboratory Comparison of Positron Annihilation Lifetime Measurements (2008)
  • Author(s): K. Ito
  • Organizer: 9th International Workshop on Positron and Positronium Chemistry
  • Place of Presentation: Wuhan, China
  • Year and Date: 2008-05-11
• [Presentation] 単色陽電子ビームによる金属ゲート形成により絶縁膜へ導入された欠陥の検出 (2007)
  • Author(s): 鳴海貴允
  • Organizer: 応用物理学会
  • Place of Presentation: 北海道工業大学
  • Year and Date: 2007-09-04
• [Presentation] 陽電子消滅を用いた高温アニールTiN/SiO_2界面反応に対するTiNスパッタ条件影響解析 (2007)
  • Author(s): 松木武雄
  • Organizer: 応用物理学会
  • Place of Presentation: 北海道工業大学
  • Year and Date: 2007-09-04
• [Remarks] ホームページ等
  • URL: http://www.sakura.cc.tsukuba.ac.jp/~slowpos1/
• [Patent(Industrial Property Rights)] 低速陽電子ビーム発生装置 (2009)
  • Inventor(s): 上殿明良,服部信美,中村友二,江口和弘,五十嵐信行,吉丸正樹
  • Industrial Property Rights Holder: 株式会社半導体理工学研究センター,国立大学法人筑波大学
  • Acquisition Date: 2009-10-16