Budget Amount *help |
¥14,560,000 (Direct Cost: ¥11,200,000、Indirect Cost: ¥3,360,000)
Fiscal Year 2010: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2009: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2008: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2007: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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Research Abstract |
We developed an analysis method for metal oxides/semiconductor structures based on the positron annihilation technique to study device processes. Using monoenergetic positron beams, XPS, and measurements of the electric properties of samples, we characterized TiN/SiO_2/Si HfSiO_x/Si CVD-SiO_2, and SiO_2 to study the relationship between point defects and the electric properties. We also studied low-k materials and barrier metals in Cu/low-k structures.
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