Effects of strain and temperature on dielectric properties of "size effect free" dielectrics

• Project/Area Number: 19360294
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Inorganic materials/Physical properties
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: FUNAKUBO Hiroshi Tokyo Institute of Technology, 大学院・総合理工学研究科, 准教授 (90219080)
• Co-Investigator(Kenkyū-buntansha): UCHIDA Hiroshi 上智大学, 理工学部, 助教 (60327880)
• Project Period (FY): 2007 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥21,060,000 (Direct Cost: ¥16,200,000、Indirect Cost: ¥4,860,000); Fiscal Year 2008: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2007: ¥16,640,000 (Direct Cost: ¥12,800,000、Indirect Cost: ¥3,840,000)
• Keywords: サイズ効果 / 誘電体薄膜 / 残留歪み / 温度依存性

Research Abstract

サイズ効果フリー特性を有するSrBi_4Ti_4O_<15>について、誘電特性に及ぼす残留歪と温度の影響を調べた。結晶方位の異なる膜を作製して評価したところ、誘電率の温度依存性には結晶方位依存性が存在し、(001)配向が最も小さな温度依存性を示すことが明らかになった。一方基板からの熱歪の異なる基板上に作製したc軸1軸配向膜でも、比誘電率の温度依存性は小さいことが明らかになった。

Research Products

• [Journal Article] Effect of the Annealing Temperature on Dielectric Properties of Bi_<1.5>Zn_<1.0>Nb_<1.5>O_7 Films Prepared by MOCVD (2009)
  • Author(s): Hiroshi Funakubo, Shingo Okaura, Muneyasu Suzuki, Hiroshi Uchida, and Seiichiro Koda
  • Journal Title: Key Eng. Mater 388 Pages: 175-178
  • Peer Reviewed
• [Journal Article] Fabrication of conductive oxide polycrystalline BaPbO_3 films by chemical solution deposition and their electrical resistivity (2009)
  • Author(s): Hiroshi Naganuma, Kayoko Yamada, Hiromi Shima, Kensuke Akiyama, Takashi Iijima, Hiroshi Funakubo, and Soichiro Okamura
  • Journal Title: J Electroceram 22 Pages: 78-81
  • Peer Reviewed
• [Journal Article] “Effect of the Annealing Temperature on Dielectric Properties of Bi_<1.5>Zn_<1.0>Nb_<1.5>O_7 Films Prepared by MOCVD (2009)
  • Author(s): Hiroshi Funakubo, Shingo Okaura, Muneyasu Suzuki, Hiroshi Uchida, Seiichiro Koda
  • Journal Title: Key Eng. Mater. 388 Pages: 175-178
  • Peer Reviewed
• [Journal Article] “Fabrication of conductive oxide polycrystalline BaPbO_3 films by chemical solution deposition and their electrical resistivity (2009)
  • Author(s): Hiroshi Naganuma, Kayoko Yamada, Hiromi Shima, Kensuke Akiyama, Takashi Iijima, Hiroshi Funakubo, Soichiro Okamura
  • Journal Title: J Electroceram 22 Pages: 78-81
  • Peer Reviewed
• [Journal Article] Low strain sensitivity of the dielectric property of pryrochlore Bi-Zn-Nb-O films (2008)
  • Author(s): Hiroshi Funakubo, Shingo Okaura, Muneyasu Suzuki, Hiroshi Uchida, Seiichiro Koda, Rikyu Ikariyama, and Tomoaki Yamada
  • Journal Title: Appl. Phys. Lett 92
  • Peer Reviewed
• [Journal Article] Single domain epitaxial growth of yttria stabilized zirconia on Si(111)substrate (2008)
  • Author(s): S. Kaneko, K. Akiyama, T. Ito, Y. Hirabayashi, S. Ohya, T. Oguni, Y. Sawada, H. Funakubo, and M. Yoshimoto
  • Journal Title: Ceram. Inter 34(4) Pages: 1047-1050
  • Peer Reviewed
• [Journal Article] Degradation free Dielectric Property Using Bismuth Layer structure Dielectrics Having Natural Superlattice Structure (2008)
  • Author(s): Hiroshi Funakubo
  • Journal Title: J. Ceram. Soc. Jpn 116(12)
  • NAID: 110007007486
  • Peer Reviewed
• [Journal Article] Cubic on cubic growth of a MgO(001) thin film prepared on Si(001) substrate at low ambient pressure by the sputtering method (2008)
  • Author(s): S. Kaneko, H. Funakubo, T. Kadowaki, Y. Hirabayashi, and K. Akiyama
  • Journal Title: EPL 81
  • Peer Reviewed
• [Journal Article] Temperature Dependency of Dielectric Properties in Epitaxially Grown SrBi_4Ti_4O_<15> Films with Different Orientation (2008)
  • Author(s): Hiroshi Funakubo, Muneyasu Suzuki, Kenji Takahashi, and Takayuki Watanabe
  • Journal Title: Key Engineering Materials 368-372 Pages: 1811-1813
  • Peer Reviewed
• [Journal Article] “Low strain sensitivity of the dielectric property of pryrochlore Bi-Zn-Nb-O films (2008)
  • Author(s): Hiroshi Funakubo, Shingo Okaura, Muneyau Suzuki, Hiroshi Uchida, Seiichiro Koda, Rikyu Ikariyama, Tomoaki Yamada
  • Journal Title: Appl. Phys. Lett. 92
  • Peer Reviewed
• [Journal Article] Single domain epitaxial growth of yttria-stabilized zirconia on Si(lll)substrate (2008)
  • Author(s): S. Kaneko, K. Akiyama, T. Ito, Y. Hirabayashi, S. Ohya, T. Oguni, Y. Sawada, H. Funakubo, M. Yoshimoto
  • Journal Title: Ceram. Inter. 34(4) Pages: 1047-1050
  • Peer Reviewed
• [Journal Article] Degradation-free Dielectric Property Using Bismuth Layer-structure Dielectrics Having Natural Superlattice Structure (2008)
  • Author(s): Hiroshi Funakubo
  • Journal Title: J. Ceram. Soc. Jpn. 116(12)
  • NAID: 110007007486
  • Peer Reviewed
• [Journal Article] Cubic-on-cubic growth of a MgO (001) thin film prepared on Si (001) substrate at low ambient pressure by the sputtering method, (2008)
  • Author(s): S. Kaneko, H. Funakubo, T. Kadowaki, Y. Hirabayashi and K. Akiyama
  • Journal Title: EPL 81
  • Peer Reviewed
• [Journal Article] Temperature Dependency of Dielectric Properties in Epitaxially Grown SrBi_4Ti_4O^<15> Films with Different Orientation (2008)
  • Author(s): Hiroshi Funakubo Muneyasu Suzuki, Kenji Takahashi and Takayuki Watanabe
  • Journal Title: Key Engineering Materials 368-372 Pages: 1811-1813
  • Peer Reviewed
• [Journal Article] ビスマス層状誘電体のナノレイヤー積層方向に見られる新規誘電特性 (2007)
  • Author(s): 舟窪浩
  • Journal Title: (社)日本セラミックス協会 42 Pages: 169-174
  • NAID: 10018578700
• [Journal Article] ビスマス層状誘電体のナノレイヤー積層方向に見られる新規誘電特性, (2007)
  • Author(s): 舟窪 浩
  • Journal Title: (社)日本セラミックス協会 42 Pages: 169-174
  • NAID: 10018578700
• [Presentation] Si基板上における(001)高配向性(Ca, Sr)Bi_4Ti_4O_<15>薄膜の作製 (2009)
  • Author(s): 水谷佑樹, 内田寛, 舟窪浩, 幸田清一郎
  • Organizer: 日本セラミックス協会2009年度年会
  • Place of Presentation: 東京理科大学野田キャンパス
  • Year and Date: 2009-03-16
• [Presentation] Si基板上における(001)高配向性(Ca, Sr)Bi_4Ti_4O_<15>薄膜の作製 (2009)
  • Author(s): 水谷佑樹, 内田寛, 舟窪浩, 幸田清一郎
  • Organizer: 日本セラミックス協会 2009年度年会
  • Place of Presentation: 東京理科大学野田キャンパス
  • Year and Date: 2009-03-16
• [Presentation] 化学溶液法による(001)配向(Ca, Sr)Bi_4Ti_4O_<15>薄膜の作製 (2008)
  • Author(s): 水谷佑樹, 内田寛, 舟窪浩, 幸田清一郎
  • Organizer: 2008年度秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2008-09-02
• [Presentation] 化学溶液法による(001)配向(Ca, Sr)Bi_4Ti_4_O_<15>薄膜の作製 (2008)
  • Author(s): 水谷佑樹, 内田寛, 舟窪浩, 幸田清一郎
  • Organizer: 2008年度秋季 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学
  • Year and Date: 2008-09-02
• [Presentation] Degradation Free Characteristics of c axis Oriented Bismuth Layer Structured Dielectrics (2007)
  • Author(s): Hiroshi Funakubo, Kenji Takahashi, Muneyasu Suzuki, Takashi Kojima, Takayuki Watanabe, Kazumi Kato, Yukio Sakashita, Kazushi Sumitani, and Osami Sakata
  • Organizer: International Symposium on Integrated Ferroelectrics(ISIF 2007)
  • Place of Presentation: Bordeaux, France
• [Presentation] Film thickness dependence of the dielectric thin films in c axis oriented bismuth layer perovskite materials (2007)
  • Author(s): H. Funakubo
  • Organizer: The Fifth China International Conference on High Performance Ceramics(CICC-5)
  • Place of Presentation: Vaya Huatian International Hotel, Changsha, China
• [Presentation] Degradation Free Characteristics of c-axis Oriented Bismuth Layer-Structured Dielectrics (2007)
  • Author(s): Hiroshi Funakubo, Kenji Takahashi, Muneyasu Suzuki, Takashi Kojima, Takayuki Watanabe, Kazumi Kato, Yukio Sakashita, Kazushi Sumitani and Osami Sakata
  • Organizer: International Symposium on Integrated Ferroelectrics (ISIF 2007)
  • Place of Presentation: Bordeaux, France
• [Presentation] Film thickness dependence of the dielectric thin films in c-axis oriented bismuthlayer perovskite materials (2007)
  • Author(s): H. Funakubo
  • Organizer: The Fifth China International Conference on High-Performance Ceramics (CICC-5)
  • Place of Presentation: Vaya Huatian International Hotel, Changsha, China
• [Remarks]
  • URL: http://f-lab.iem.titech.ac.jp/f-lab.htm
• [Remarks]
  • URL: http://f-lab.iem.titech.ac.jp/f-lab.htm