Low Temperature Bonding Process through Self-Sintering of Nanoparticles and its Application to Electronics Assembly
Project/Area Number |
19360332
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Material processing/treatments
|
Research Institution | Osaka University |
Principal Investigator |
HIROSE Akio Osaka University, 工学研究科, 教授 (70144433)
|
Co-Investigator(Kenkyū-buntansha) |
SANO Tomokazu 大阪大学, 工学研究科, 准教授 (30314371)
OGURA Tomo 大阪大学, 工学研究科, 助教 (90505984)
|
Project Period (FY) |
2007 – 2009
|
Project Status |
Completed (Fiscal Year 2009)
|
Budget Amount *help |
¥19,110,000 (Direct Cost: ¥14,700,000、Indirect Cost: ¥4,410,000)
Fiscal Year 2009: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2008: ¥6,890,000 (Direct Cost: ¥5,300,000、Indirect Cost: ¥1,590,000)
Fiscal Year 2007: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
|
Keywords | ナノ粒子 / 焼結 / 固相接合 / 鉛フリー / パワー半導体 / 実装 / 酸化銀還元 / 分子動力学シミュレーション / ダイボンデイング / 有機-銀複合ナノ粒子 / エピタキシアル / 分子動力学 / ヘテロエピタキシアル |
Research Abstract |
A novel bonding process using Ag nanoparticles with a particle size less than several tens nm that realizes solid state metal-to-metal bonding at a bonding temperature of 300℃ or lower has been developed. In particular, we have devised a bonding process through in-situ formation of Ag nanoparticles by reducing Ag_2O microparticles that achieves successful metal-to-metal bonding at 200℃. This bonding process is also more convenient and lower cost, and allows higher bonding strength than that directly using Ag nanoparticles. We have applied this bonding process to assembly of a power semiconductor and achieved higher reliability than the conventional assembly by soldering.
|
Report
(4 results)
Research Products
(69 results)