Physical chemistry on the preparation of β-FeSi2semiconductor by the exchange reaction between molten salts and silicon
| Project/Area Number |
19360342
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Metal making engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
MORITA Kazuki The University of Tokyo, 生産技術研究所, 教授 (00210170)
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| Project Period (FY) |
2007 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥20,280,000 (Direct Cost: ¥15,600,000、Indirect Cost: ¥4,680,000)
Fiscal Year 2009: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2008: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2007: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000)
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| Keywords | 環境材料 / 金属生産工学 / 結晶成長 / 太陽光発電 / 表面・界面物性 / β-FeSi_2 / 環境半導体 / 溶融塩 / 陽イオン交換反応 |
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| Research Abstract |
Until now, it is difficult to obtain the β-FeSi2 bulk crystal directly from the Fe-Si binary liquid, however, in this study, the new method to prepare β-FeSi2 film on Si Substrate by cation exchange reaction between molten salts and Si have been established. In addition to that, the doping method (such as Co, Ni, etc.) to β-FeSi2 by this exchange reaction was suggested, and the electrical and optical properties of this β-FeSi2 film was investigated.
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Report
(4 results)
Research Products
(11 results)
