Physical chemistry on the preparation of β-FeSi2semiconductor by the exchange reaction between molten salts and silicon

• Project/Area Number: 19360342
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Metal making engineering
• Research Institution: The University of Tokyo
• Principal Investigator: MORITA Kazuki The University of Tokyo, 生産技術研究所, 教授 (00210170)
• Project Period (FY): 2007 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥20,280,000 (Direct Cost: ¥15,600,000、Indirect Cost: ¥4,680,000); Fiscal Year 2009: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000); Fiscal Year 2008: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000); Fiscal Year 2007: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000)
• Keywords: 環境材料 / 金属生産工学 / 結晶成長 / 太陽光発電 / 表面・界面物性 / β-FeSi_2 / 環境半導体 / 溶融塩 / 陽イオン交換反応

Research Abstract

Until now, it is difficult to obtain the β-FeSi2 bulk crystal directly from the Fe-Si binary liquid, however, in this study, the new method to prepare β-FeSi2 film on Si Substrate by cation exchange reaction between molten salts and Si have been established. In addition to that, the doping method (such as Co, Ni, etc.) to β-FeSi2 by this exchange reaction was suggested, and the electrical and optical properties of this β-FeSi2 film was investigated.

Research Products

• [Journal Article] Preparation of Co-added β-FeSi_2 by Cation-exchange Reaction between Molten Salts and Si (2010)
  • Author(s): Motohiro Sakamoto, Kazuki Morita
  • Journal Title: Materials Transactions vol.51, No.1 Pages: 90-93
  • NAID: 10026264682
  • Peer Reviewed
• [Journal Article] Preparation of Co-Added β-FeSi_2 by Cation-Exchange Reaction between Molten Salts and Si (2010)
  • Author(s): M.Sakamoto, K.Morita
  • Journal Title: Materials Transaction Volume: 51 Pages: 90-93
  • NAID: 10026264682
  • Peer Reviewed
• [Journal Article] Growth of b-FeSi_2 Layers on Si(100) Substrates by Exchange Reaction between Si and Molten Salts (2007)
  • Author(s): Tsuyoshi Yoneyama, Takeshi Yoshikawa, Kazuki Morita
  • Journal Title: Japanese Journal of Applied Physics 46 Pages: 5233-5237
  • Peer Reviewed
• [Journal Article] Growth of β-FeSi_2 Layers on Si(100) Substrate by Exchange Reaction between Si and Molten Salts (2007)
  • Author(s): T. Yoneyama, T. Yoshikawa, K. Morita
  • Journal Title: Japanese Journal of Applied Physics 46 Pages: 5233-5237
  • Peer Reviewed
• [Presentation] Characterization of Co Added β-FeSi_2 Film by Cation Exchange Reaction between Molten Salts and Si Wafer (2009)
  • Author(s): M.Sakamoto, K.Morita
  • Organizer: 8th UT2-COSM (Tokyo-Toronto) Graduate Student Workshop
  • Place of Presentation: トロント大学(カナダ)
  • Year and Date: 2009-08-26
• [Presentation] Characterization of β-FeSi_2 Film Synthesized by Exchange Reaction between Si and Molten Salts (2009)
  • Author(s): 坂元基紘, 森田一樹
  • Organizer: 138th TMS Annual Meeting
  • Place of Presentation: サンフランシスコ、アメリカ
  • Year and Date: 2009-02-16
• [Presentation] Characterization of β-FeSi_2 Film Synthesized by Exchange Reaction between Si and Molten Salts (2009)
  • Author(s): Motohiro Sakamoto, Kazuki Morita
  • Organizer: TMS 2009 Annual Meeting & Exhibition
  • Place of Presentation: San Francisco, USA
  • Year and Date: 2009-02-15
• [Presentation] 溶融塩-Si交換反応によるβ-FeSi_2膜の作製と評価 (2008)
  • Author(s): 坂元基紘、米山毅、森田一樹
  • Organizer: 日本金属学会143回
  • Place of Presentation: 熊本
  • Year and Date: 2008-09-24
• [Presentation] 溶融塩-Si交換反応によるβ-FeSi_2膜の創製および特性評価 (2008)
  • Author(s): 坂元基紘, 米山毅, 森田一樹
  • Organizer: 日本金属学会2008年秋期(第143回)大会
  • Place of Presentation: 熊本大学
  • Year and Date: 2008-09-24
• [Remarks] ホームページ等
• [Patent(Industrial Property Rights)] β-FeSi_2形成方法および電子デバイス作成方法 (2007)
  • Inventor(s): 森田一樹、吉川健、米山毅
  • Industrial Property Rights Holder: 国立大学法人東京大学
  • Patent Publication Number: 2007-281411
  • Filing Date: 2007-10-25