| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2009: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2008: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2007: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Research Abstract |
Amorphous fluorocarbon (a-C:F) films, which are applicable to insulation of electrical power equipment and integrated circuits, were deposited by plasma-enhanced chemical vapor deposition using a C_8F_<18> feedstock. When the a-C:F films were composed at a low plasma power, the thermal tolerance of the films was weak for less bondings between molecular chains in the a-C:F films (loose films). The dielectric constant of these a-C:F films had a tendency to be lower than that of conventional a-C:F films with dense bondings between molecular chains (firm films). This feature is desirable for reduction of the dielectric energy loss in power equipment and the delay of the signal transmission in the integrated circuits. In addition, we found a waving phenomenon of the firm film due to the heat given during the deposition of the firm film on a loose film. The voids made under the wavy film are also expected to contribute to the reduction of the dielectric constant of the a-C:F films.
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