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Epitaxial Growth and characterization of Room-temperature ferromagnetic chalcopyrite semiconductor thin films

Research Project

Project/Area Number 19560012
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionNagaoka University of Technology

Principal Investigator

内富 直隆  Nagaoka University of Technology, 工学部, 准教授 (20313562)

Co-Investigator(Kenkyū-buntansha) 加藤 有行  長岡技術科学大学, 工学部, 准教授 (10303190)
神保 良夫  長岡技術科学大学, 工学部, 技術職員 (10134975)
Co-Investigator(Renkei-kenkyūsha) KATO Ariyuki  長岡技術科学大学, 工学部, 准教授 (10303190)
JINBO Yoshio  長岡技術科学大学, 工学部, 技術職員 (10134975)
Project Period (FY) 2007 – 2008
Project Status Completed (Fiscal Year 2008)
Budget Amount *help
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2008: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2007: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Keywords結晶工学 / 結晶成長 / 表面・界面物性 / 半導体 / 界面・界面物性
Research Abstract

電子の電荷とスピンを利用する半導体スピントロニクスの実現には、半導体プロセスと整合し室温で強磁性を発現する半導体が求められる。本研究では、インジウムリン基板と格子整合するカルコパイライト半導体ZnSnAs_2薄膜のエピタキシャル成長技術の確立とその薄膜の物性評価を行った。引き続き、Mn ドープしたZnSnAs_2薄膜の結晶成長を行い室温で強磁性を示すことが確認された。このことから、Mn ドープZnSnAs_2薄膜はインジウムリン基板と格子整合する室温強磁性半導体として、新しいデバイス応用の可能性を示している

Report

(3 results)
  • 2008 Annual Research Report   Final Research Report ( PDF )
  • 2007 Annual Research Report
  • Research Products

    (37 results)

All 2009 2008 2007 2006

All Journal Article (6 results) (of which Peer Reviewed: 6 results) Presentation (28 results) Patent(Industrial Property Rights) (3 results)

  • [Journal Article] MBE growth of Mn-doped ZnSnAs2 thin films2009

    • Author(s)
      J.Asubar, Y.Jinbo, N.Uchitomi
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 929-932

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Impurity band conduction and negative magnetoresistance in p-ZnSnAs2 thin films2009

    • Author(s)
      J.T.Asubar, Y.Jinbo, N.Uchitomi
    • Journal Title

      Physica Status Solidi (C)

      Pages: 1-4

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Impurity band conduction and negative magnetoresistance in p-ZnSnAs2 thin films2009

    • Author(s)
      J. T. Asubar
    • Journal Title

      Physica Status Solidi (C) 6

      Pages: 1158-1161

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] MBE growth of Mn-doped ZnSnAs2 thin films2009

    • Author(s)
      J. T. Asubar
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 929-932

    • Related Report
      2008 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electrotransport properties of p-ZnSnAs2 thin films growm by molecular beam epitaxy on semi-insulating (001) InP substrates2008

    • Author(s)
      J.T.Asubar, A.Kato, Y.Jinbo, N.Uchitomi
    • Journal Title

      Journal of Applied Physics 47

      Pages: 657-660

    • Related Report
      2008 Final Research Report
    • Peer Reviewed
  • [Journal Article] Electrotransport Properties of p-ZnSnAs2 Thin Films Grown by Molecular Beam Epitaxy on Semi-insulating (001) InP Substrates2008

    • Author(s)
      J.T. Asubar,
    • Journal Title

      Japanese Journal of Applied Physics 47

      Pages: 657-660

    • Related Report
      2007 Annual Research Report
    • Peer Reviewed
  • [Presentation] Ferromagnetic Mn-doped ZnSnAs2 thin films lattice-matched with InP2009

    • Author(s)
      Joel T. Asubar
    • Organizer
      The 13^<th> Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors
    • Place of Presentation
      宮城県仙台市
    • Year and Date
      2009-01-27
    • Related Report
      2008 Annual Research Report
  • [Presentation] Highly Resolution X-ray Diffraction Studies of Molecular Beam Epitaxy-Grown ZnSnAs2 Epitaxial Films on InP (001) Substrates2008

    • Author(s)
      J.Asubar, Y.Jinbo, N.Uchitomi
    • Organizer
      日本物理学会新潟支部第37回例会
    • Place of Presentation
      新潟市
    • Year and Date
      2008-12-02
    • Related Report
      2008 Final Research Report
  • [Presentation] Highly-Resolution X-ray Diffraction Studies of Molecular Beam Epitaxy-Grown ZnSnAs2 Epitaxial Films on InP (001)Substrates2008

    • Author(s)
      Joel T. Asubar
    • Organizer
      平成20年度 日本物理学会新潟支部 第37回例会
    • Place of Presentation
      新潟県新潟市
    • Year and Date
      2008-12-02
    • Related Report
      2008 Annual Research Report
  • [Presentation] Zn-Sn-As : Mn/Si(001)のMBE成長と評価2008

    • Author(s)
      我妻優二、J.Asubar, 神保良夫、内富直隆
    • Organizer
      第18回電気学会東京支部新潟支所研究発表会
    • Place of Presentation
      新潟市
    • Year and Date
      2008-11-03
    • Related Report
      2008 Final Research Report
  • [Presentation] Zn-Sn-As: Mn/Si(001)のMBE成長と評価2008

    • Author(s)
      我妻優二
    • Organizer
      第18回電気学会東京支部新潟支所研究発表会
    • Place of Presentation
      新潟県新潟市
    • Year and Date
      2008-11-03
    • Related Report
      2008 Annual Research Report
  • [Presentation] Room-temperature ferronmagetism in Mn-doped ZnSnAs2 thin films grown on InP substrates2008

    • Author(s)
      J.Asubar, Y.Jinbo, N.Uchitomi
    • Organizer
      The 2^<nd> IEEE Nanotechnology Materials and Devices Conference
    • Place of Presentation
      Kyoto
    • Year and Date
      2008-10-20
    • Related Report
      2008 Final Research Report
  • [Presentation] Room-temperature ferronmagetism in Mn-doped ZnSnAs2 thin films grown on InP substrates2008

    • Author(s)
      N. Uchitomi
    • Organizer
      The 2^<nd> IEEE Nanotechnology Materials and Devices Conference
    • Place of Presentation
      京都府京都市
    • Year and Date
      2008-10-20
    • Related Report
      2008 Annual Research Report
  • [Presentation] Impurity band conduction and negative magnetoresistance in p-ZnSnAs2 thin films2008

    • Author(s)
      J.T.Asubar, Y.Jinbo, N.Uchitomi
    • Organizer
      16^<th> International Conference on Ternary and Multinary Compounds
    • Place of Presentation
      Berlin
    • Year and Date
      2008-09-15
    • Related Report
      2008 Final Research Report
  • [Presentation] Ferromagnetic Mn-doped ZnSnAs2 thin films lattice-matched with InP2008

    • Author(s)
      Joel T. Asubar
    • Organizer
      16^<th> Inteference on Ternary and Multinary Compounds
    • Place of Presentation
      ドイツ・ベルリン
    • Year and Date
      2008-09-15
    • Related Report
      2008 Annual Research Report
  • [Presentation] ZnSnAs_2薄膜のキャリア輸送機構2008

    • Author(s)
      Joel Asubar, 神保良夫, 内富直隆
    • Organizer
      2008年(平成20年)秋季第69回応用物理学学術講演会
    • Place of Presentation
      春日井市
    • Year and Date
      2008-09-02
    • Related Report
      2008 Final Research Report
  • [Presentation] ZnSnAsj薄膜のキャリア輸送機構2008

    • Author(s)
      Joel T. Asubar
    • Organizer
      2008年(平成20年)秋季第69回応用物理学学術講演会
    • Place of Presentation
      愛知県春日井市
    • Year and Date
      2008-09-02
    • Related Report
      2008 Annual Research Report
  • [Presentation] Growth, structural and transport properties of ZnSnAs2 thin films on InP (001) substrate2008

    • Author(s)
      J.Asubar, S.Nakamura, Y.Jinbo, N.Uchitomi
    • Organizer
      s27^<th> Electronic Materials Symposium
    • Place of Presentation
      Izunokuni
    • Year and Date
      2008-07-21
    • Related Report
      2008 Final Research Report
  • [Presentation] Growth, structural and transport properties of ZnSnAs2 thin films on InP (001)substrates2008

    • Author(s)
      Joel T. Asubar
    • Organizer
      27^<th> Electronic Materials Symposium
    • Place of Presentation
      静岡県伊豆の国市
    • Year and Date
      2008-07-21
    • Related Report
      2008 Annual Research Report
  • [Presentation] MBE growth of Mn-doped ZnSnAs2 thin films2008

    • Author(s)
      J. Asubar, Y. Jinbo, N. Uchitomi
    • Organizer
      The 4^<th> Asian Confrerence on Crystal Growth and Crystal Technology
    • Place of Presentation
      Sendai
    • Year and Date
      2008-05-21
    • Related Report
      2008 Final Research Report
  • [Presentation] MBE growth of Mn-doped ZnSnAs2 thin films2008

    • Author(s)
      Joel T. Asubar
    • Organizer
      The 4^<th> Asian Confrerence on Crystal Growth and Crystal Technology
    • Place of Presentation
      宮城県仙台市
    • Year and Date
      2008-05-21
    • Related Report
      2008 Annual Research Report
  • [Presentation] Growth and properties of Mn-doped ZnSnAs2 epitaxial films2007

    • Author(s)
      J.Asubar, T. Yokoyama, S.Nakamura, Y.Jinbo, N.Uchitomi
    • Organizer
      平成19年度応用物理学会北陸信越支部学術講演会
    • Place of Presentation
      富山
    • Year and Date
      2007-11-30
    • Related Report
      2008 Final Research Report
  • [Presentation] Growth and Properties of Mn-doped ZnAsAs2 epitaxial films2007

    • Author(s)
      J.T. Asubar
    • Organizer
      平成19年度応用物理学会北陸信越支部学術講演会
    • Place of Presentation
      富山県富山市
    • Year and Date
      2007-11-30
    • Related Report
      2007 Annual Research Report
  • [Presentation] n-InP (001)上にエピタキシャル成長したZnsnAs2薄膜の評価2007

    • Author(s)
      横山忠輔, J.Asubar, 神保良夫, 内富直隆
    • Organizer
      第17回電気学会東京支部新潟支所研究発表会
    • Place of Presentation
      長岡
    • Year and Date
      2007-11-23
    • Related Report
      2008 Final Research Report
  • [Presentation] Interpretation of the temperature dependence of the transport properties ZnSnas2 epitaxial films grown by MBE2007

    • Author(s)
      J.Asubar, Y.Jinbo, N.Uchitomi
    • Organizer
      第17回電気学会東京支部新潟支所研究発表会
    • Place of Presentation
      長岡市
    • Year and Date
      2007-11-23
    • Related Report
      2008 Final Research Report
  • [Presentation] Interpretation of the Temperature Dependence of the Transport Properties ZnSnAs2 epitaxial films grown by MBE2007

    • Author(s)
      J.T. Asubar
    • Organizer
      第17回電気学会東京支部新潟支所研究発表会
    • Place of Presentation
      新潟県長岡市
    • Year and Date
      2007-11-23
    • Related Report
      2007 Annual Research Report
  • [Presentation] Electrical properties of ZnAsAs2 thin films grown by MBE2007

    • Author(s)
      J.T. Asubar
    • Organizer
      電子情報通信学会技術研究報告(電子部品・材料)
    • Place of Presentation
      新潟県長岡市
    • Year and Date
      2007-11-17
    • Related Report
      2007 Annual Research Report
  • [Presentation] Electrical properties of ZnSnAs2 thin films grown by MBE2007

    • Author(s)
      J.Asubar, T.Yokoyama, Y.Jinbo, N.Uchitomi
    • Organizer
      電子情報通信学会研究報告(電子部品、材料)
    • Place of Presentation
      長岡市
    • Year and Date
      2007-07-17
    • Related Report
      2008 Final Research Report
  • [Presentation] Uchitomi, Growth and characterization of ZnSnAs2 epitaxial films on n-type and semiinsulating (001) InP substrates2007

    • Author(s)
      J.T.Asubar, T.Yokoyama, S.Nakamura, Y.Jinbo, N.Uchitomi
    • Organizer
      26th Electronic Material Symposium
    • Place of Presentation
      Moriyama
    • Year and Date
      2007-07-05
    • Related Report
      2008 Final Research Report
  • [Presentation] Growth and Characterization of ZnSnAs2 epitaxial films on N-type and Semi-insulating (001) InP substrates2007

    • Author(s)
      J.T. Asubar
    • Organizer
      26th Electronic Material Symposium
    • Place of Presentation
      滋賀県守山市
    • Year and Date
      2007-07-05
    • Related Report
      2007 Annual Research Report
  • [Presentation] Electrotransport properties of p-ZnSnAs2 thin films grown by molecular beam epitaxy on semi-insulating (001) InP substrates2007

    • Author(s)
      J. Asubar, A. Kato, Y.Jinbo, N.Uchitomi
    • Organizer
      The International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
    • Place of Presentation
      Nagano
    • Year and Date
      2007-06-21
    • Related Report
      2008 Final Research Report
  • [Presentation] Electrotransport Properties of p-ZnSnAs2 Thin Films Grown by Molecular Beam Epitaxy on Semi-insulating (001) InP Substrates2007

    • Author(s)
      J.T. Asubar
    • Organizer
      The International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
    • Place of Presentation
      長野県長野市
    • Year and Date
      2007-06-21
    • Related Report
      2007 Annual Research Report
  • [Presentation]2007

    • Author(s)
      J.T.Asubar, Y.Jinbo, N.Uchitomi
    • Organizer
      The 13^<th> Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors
    • Place of Presentation
      仙台市
    • Year and Date
      2007-01-27
    • Related Report
      2008 Final Research Report
  • [Presentation] Epitaxial growth of ZnSnAs2 thin films on n-InP(001) substrates2007

    • Author(s)
      T. Yokoyama, J. Asubar, M.Yamazaki, Y. Jinbo, N. Uchitomi
    • Organizer
      The 2007 International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
    • Place of Presentation
      Nagano
    • Related Report
      2008 Final Research Report
  • [Patent(Industrial Property Rights)] 磁性半導体2008

    • Inventor(s)
      内富直隆
    • Industrial Property Rights Holder
      長岡技術科学大学
    • Industrial Property Number
      2006-300134
    • Filing Date
      2008-11-25
    • Related Report
      2008 Final Research Report
  • [Patent(Industrial Property Rights)] 磁性半導体素子2008

    • Inventor(s)
      内富直隆
    • Industrial Property Rights Holder
      内富直隆
    • Industrial Property Number
      2008-300134
    • Filing Date
      2008-11-25
    • Related Report
      2008 Annual Research Report
  • [Patent(Industrial Property Rights)] 磁性半導体薄膜及び磁性半導体薄膜の製造方法2006

    • Inventor(s)
      内富直隆
    • Industrial Property Rights Holder
      長岡技術科学大学
    • Industrial Property Number
      2006-238022
    • Filing Date
      2006-09-01
    • Related Report
      2008 Final Research Report

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Published: 2007-04-01   Modified: 2016-04-21  

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