Study of InAsSbN/GaAsSbN new type quantum structure device in the infra-red wavelength region.

• Project/Area Number: 19560016
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Osaka Prefecture University
• Principal Investigator: KAWAMURA Yuichi Osaka Prefecture University, 産学官連携機構, 教授 (80275289)
• Project Period (FY): 2007 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2009: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2008: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2007: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
• Keywords: ヘテロ構造 / 赤外光素子 / 化合物半導体 / 量子井戸構造 / 分子線成長法 / 環境計測 / リモートセンシング / 医療応用 / 食品検査

Research Abstract

New types of InGaAs(N)/GaAsSb type II photo-detectors and InAsSbN strained-quantum well lasers were studied. A Room temperature operation of 2D-image sensor of InGaAs/GaAsSb type II quantum well with low dark current was obtained. Laser operation at 2.3 μm of InAsSbN quantum well lasers was also obtained at 210K.

Research Products

• [Journal Article] Optical characterization of InGaAsN layers grown on InP substrates (2009)
  • Author(s): M. Yoshikawa, K. Miura, Y. Iguchi, Y. Kawamura
  • Journal Title: J. Crystal Growth vol.311 Pages: 1745-1745
  • Peer Reviewed
• [Journal Article] Optical characterization of InGaAsN layers grown on InP substrates (2009)
  • Author(s): M.Yoshikawa, K.Miura, Y.Iguchi, Y.Kawamura
  • Journal Title: Journal of Crystal Growth 311 Pages: 1745-1747
  • Peer Reviewed
• [Journal Article] InP-based InGaAsSbN quantum well laser diodes in 2μm wavelength region (2008)
  • Author(s): Y. Kawamura
  • Journal Title: IEEJ Transactions on Electronics, Information and Systems Vol.128No.5 Pages: 727-727
  • NAID: 10021132313
  • Peer Reviewed
• [Journal Article] Effect of Sb incorporation on electroluminescence of InGaAsSbN quantum well diodes on GaAs substrates (2008)
  • Author(s): Y. Kawamura, M. Nishino
  • Journal Title: Jpn. J. Appl. Phys vol.47No.8 Pages: 6302-6302
  • Peer Reviewed
• [Journal Article] Effect of Sb incorporation on electroluminescence of InGaAsSbN quantum well diodes on GaAs substrates (2008)
  • Author(s): Y. Kawamura, M. Nishino
  • Journal Title: Japanese. Journal of Applied. Physics 47 Pages: 6302-6303
  • Peer Reviewed
• [Journal Article] InP-based InGaAsSbN quantum well laser diodes in 2μm wavelengthregion (2008)
  • Author(s): Y. Kawamura
  • Journal Title: IEEJ Transactions on Electronics, Information and Systems 128 Pages: 727-233
  • NAID: 10021132313
  • Peer Reviewed
• [Journal Article] EL of InGaAsN/GaAsSb Type II quanrum well light emitting diodes grown on InP by molecular beam epitaxy (2007)
  • Author(s): Y, Kawamura, N. Inoue
  • Journal Title: Jpn. J. Appl. Phys 46,6A Pages: 457-457
  • Peer Reviewed
• [Journal Article] Properties of InAsSbN Quantum Well Laser Diodes Operating at 2μm Wavelength Region Grown on InP Substrates (2007)
  • Author(s): Y. Kawamra, N. Inoue
  • Journal Title: J. Crystal Growth
  • Peer Reviewed
• [Journal Article] Improvement of crystal quality of thick InGaAsN layers grown on InP substrates by adding antimony (2007)
  • Author(s): K. Miura, Y. Nagai, Y. Iguchi, H. Okada, Y. Kawamura
  • Journal Title: J. Crystal Growth
  • Peer Reviewed
• [Journal Article] Atomic arrangement in an MBE-grown CuPt-B type ordered GaAsSb layer as observed by cross sectional scanning tunneling microscope (2007)
  • Author(s): Gomyo, S. Ohkouchi, Y. Kawamura
  • Journal Title: J. Crystal Growth 301 Pages: 47-47
• [Journal Article] Properties of InAsSbN Quantum Well Laser Diodes Operating at 2 μm Wavelength Region Grown on InP Substrates (2007)
  • Author(s): Y. Kawamra and N. Inoue
  • Journal Title: Journal of Crystal Growth 301 Pages: 963-966
  • Peer Reviewed
• [Journal Article] Improvement of crystal quality of thick InGaAsN layers grown on InP substrates (2007)
  • Author(s): K. Miura, Y. Nagai, Y. Iguchi, H. Okada, Y. Kawamura
  • Journal Title: Journal of Crystal Growth 301 Pages: 575-578
  • Peer Reviewed
• [Journal Article] Electroluminescence of InGaAsN/GaAsSb Type II quanrum well light emitting diodes grown on InP by molecular beam epitaxy (2007)
  • Author(s): Y. Kawamura, N. Inoue
  • Journal Title: Japanese Joumal of Applied Physics 46 Pages: 2280-3381
  • Peer Reviewed
• [Presentation] 「InGaAs/GaAsSbタイプII量子井戸を用いた非冷却赤外2次元センサアレイ」講演予稿第1分冊 (2010)
  • Author(s): 三浦広平, 森大樹, 永井陽一, 稲田博史, 猪口康博, 河村裕一
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 神奈川
  • Year and Date: 2010-03-20
• [Presentation] 「SiCの赤外吸収(2)」講演予稿第1分冊 (2010)
  • Author(s): 井上直久, 須田良幸, 菅谷孝夫, 河村裕一
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 神奈川
  • Year and Date: 2010-03-18
• [Presentation] 「低炭素濃度Si結晶中の赤外吸収(7)」講演予稿第1分冊 (2010)
  • Author(s): 井上直久, 後藤康則, 杉山隆英, 河村裕一
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 神奈川
  • Year and Date: 2010-03-18
• [Presentation] 「InP基板上のInGaAsSbN層のアニール効果」講演予稿第1分冊 (2010)
  • Author(s): 吉川真央, 三浦広平, 猪口康博, 河村裕一
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 神奈川
  • Year and Date: 2010-03-18
• [Presentation] InP基板上InAsSbN単一量子井戸のMBE成長」講演予稿集第1分冊 (2010)
  • Author(s): 西野正嗣, 河村裕一
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 神奈川
  • Year and Date: 2010-03-18
• [Presentation] InP基板上のMBE成長GaAsSbの評価 (2009)
  • Author(s): 平池龍馬、三浦広平、猪口正博、河村裕一
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-17
• [Presentation] 「低炭素濃度Si結晶中の赤外吸収(6)」講演予稿集第1分冊 (2009)
  • Author(s): 井上直久, 後藤康則, 杉山隆英, 河村裕一
  • Organizer: 第70回応用物理学会学術講演会
  • Year and Date: 2009-09-09
• [Presentation] 「InGaAsP/InAlAsP MQW層の評価」講演予稿集第1分冊 (2009)
  • Author(s): 鹿山昌代, 河村裕一
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山
  • Year and Date: 2009-09-09
• [Presentation] 「InP基板上のMBE成長GaAsSbの評価」講演予稿集第1分冊 (2009)
  • Author(s): 平池龍馬, 三浦広平, 猪口正博, 河村裕一
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山
  • Year and Date: 2009-09-09
• [Presentation] InP基板上のMBE成長InGaAs/GaAsSb歪補償タイプII多重量子井戸層の評価 (2009)
  • Author(s): 米澤康弘, 河村裕一, 三浦広平, 猪口康博
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-31
• [Presentation] SiC薄膜の赤外吸収 (2009)
  • Author(s): 井上直久, 須田良幸, 山口雄一郎, 河村裕一, 久保田嘉孝
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波
  • Year and Date: 2009-03-30
• [Presentation] 低炭素濃度CZ-Si結晶中の低線量照射誘起複合体の赤外吸収 (2009)
  • Author(s): 井上直久, 後藤安則, 杉山隆英, 河村裕一, 久保田嘉孝
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波
  • Year and Date: 2009-03-30
• [Presentation] InGaAs/GaAsSbタイプII量子井戸を受光層に用いた低暗電流pinフォトダイオード"講演予稿第1分冊 (2009)
  • Author(s): 三浦広平, 永井陽一, 稲田博史, 猪口康博, 坪倉光隆, 河村裕一
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波
• [Presentation] InP基板上のMBE成長InGaAs/GaAsSb歪補償タイプII多重量子井戸層の評価"講演予稿集第1分冊 (2009)
  • Author(s): 米澤康弘, 河村裕一, 三浦広平, 猪口康博
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波
• [Presentation] 低炭素濃度CZ-Si結晶中の低線量照射複合体の赤外吸収"講演予稿集第1分冊 (2008)
  • Author(s): 井上直久, 後藤康則, 杉山隆英, 河村裕一
  • Organizer: 第69会応用物理学会学術講演会
  • Place of Presentation: 名古屋
  • Year and Date: 2008-09-05
• [Presentation] InP上にMBE成長した厚いInGaAsSbNの光学的評価"講演予稿集第1分冊 (2008)
  • Author(s): 吉川真央, 三浦広平, 永井陽一, 猪口康博, 河村裕一
  • Organizer: 第69会応用物理学会学術講演会
  • Place of Presentation: 名古屋
  • Year and Date: 2008-09-05
• [Presentation] InP基板上のGaAsSbとInGaAs/GaAsSbタイプII量子井戸のtem観察"講演予稿集第1分冊 (2008)
  • Author(s): 河村裕一, 三浦広平, 坪倉光隆, 岡田浩
  • Organizer: 第69会応用物理学会学術講演会
  • Place of Presentation: 名古屋
  • Year and Date: 2008-09-03
• [Presentation] InP基板上のInGaAsN/GaAsSbタイプII量子井戸ダイオードの発光特性"講演予稿集第1分冊 (2008)
  • Author(s): 河村裕一, 井上直久
  • Organizer: 第68会応用物理学会学術講演会
  • Place of Presentation: 北海道
  • Year and Date: 2008-09-03
• [Presentation] MBE growth of thick InGaAsN layerslattice-matched to InP substrates (2007)
  • Author(s): K. Miura, Y. Nagai, Y. Iguchi, M. Tsubokura, H. Okada, Y. Kawamura
  • Organizer: The 19^<th> International Conference on InP and related materials
  • Place of Presentation: 松江市
  • Year and Date: 2007-05-17
• [Book] 光技術動向調査報告書 (2007)
  • Author(s): 河村 裕一(分担執筆)
  • Total Pages: 450
  • Publisher: 光産業技術振興協会
• [Remarks]
  • URL: http://tokachi.riast.osakafu-u.ac.jp/%7Esentan4/home.html
• [Patent(Industrial Property Rights)] 半導体素子 (2008)
  • Inventor(s): 河村裕一
  • Industrial Property Rights Holder: 大阪府立大学
  • Filing Date: 2008-08-07
• [Patent(Industrial Property Rights)] 半導体素子 (2008)
  • Inventor(s): 河村裕一
  • Industrial Property Rights Holder: 大阪府立大学
  • Industrial Property Number: 2008-119978
  • Filing Date: 2008-08-10
• [Patent(Industrial Property Rights)] 新規受光素子 (2007)
  • Inventor(s): 河村裕一
  • Industrial Property Rights Holder: 大阪府立大学
  • Filing Date: 2007-04-10
• [Patent(Industrial Property Rights)] 受光デバイス (2007)
  • Inventor(s): 河村裕一
  • Industrial Property Rights Holder: 大阪府立大学
  • Filing Date: 2007-05-15
• [Patent(Industrial Property Rights)] 半導体ウェハ・その製造 (2007)
  • Inventor(s): 河村裕一
  • Industrial Property Rights Holder: 大阪府立大学
  • Filing Date: 2007-07-07
• [Patent(Industrial Property Rights)] 光受光素子 (2007)
  • Inventor(s): 河村 裕一
  • Industrial Property Rights Holder: 大阪府立大学
  • Industrial Property Number: 2007-190281
  • Filing Date: 2007-07-23