Atomic-scale dielectric properties at the interface between Si and La-based oxides

• Project/Area Number: 19560020
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: The University of Electro-Communications
• Principal Investigator: NAKAMURA Jun The University of Electro-Communications, 電気通信学部, 准教授 (50277836)
• Project Period (FY): 2007 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000); Fiscal Year 2009: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2008: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000); Fiscal Year 2007: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
• Keywords: ナノ材料 / 電子デバイス / 表面界面物性

Research Abstract

密度汎関数理論に基づく第一原理電子状態計算を用いて、La酸化物超薄膜単体およびLa酸化物とSi基板界面における原子レベル誘電特性、電子状態計算を行った。La酸化物表面においては、表面緩和により誘電率が著しく低下することがわかった。また、界面におけるバンドオフセットは、界面原子配列の詳細に大きく依存することがわかった。

Research Products

• [Journal Article] n-plane strain effects on dielectric properties of the HfO2 thin film (2009)
  • Author(s): S. Wakui, J. Nakamura, A. Natori
  • Journal Title: J. Vac. Sci. Technol. B 27 Pages: 2020-2020
  • Peer Reviewed
• [Journal Article] Negative donors in bulk Si and Si/SiO2 quantum wells in a magnetic field (2009)
  • Author(s): J. Inoue, T. Chiba, A. Natori, J. Nakamura
  • Journal Title: Phys. Rev. B 79 Pages: 305206-305206
  • Peer Reviewed
• [Journal Article] In-plane strain effects on dielectric properties of the HfO2 thin film (2009)
  • Author(s): S.Wakui
  • Journal Title: J.Vac.Sci.Technol.B 27 Pages: 2020-2023
  • Peer Reviewed
• [Journal Article] Negative donors in bulk Si and Si/SiO2 quantum wells in a magnetic field (2009)
  • Author(s): J.Inoue
  • Journal Title: Phys.Rev.B 79
  • Peer Reviewed
• [Journal Article] Atomic scale dielectric constant near the SiO2/Si(001) interface (2008)
  • Author(s): S. Wakui, J. Nakamura, A. Natori
  • Journal Title: J. Vac. Sci. Technol. B 26 Pages: 1579-1579
• [Journal Article] Atomic scale dielectric constant near the SiO2/Si (001) interface (2008)
  • Author(s): S. Wakui
  • Journal Title: J. Vac. Sci. Technol. B 26 Pages: 1579-1584
  • Peer Reviewed
• [Journal Article] Dielectric properties of the interface between Si and SiO2 (2007)
  • Author(s): S. Wakui, J. Nakamura, A. Natori
  • Journal Title: Jpn. J. Appl. Phys. 46 Pages: 3261-3261
  • Peer Reviewed
• [Journal Article] Nano-Scale Profile of the Dielectric Constant Near the Si/oxide Interface: A First-Principles Approach (2007)
  • Author(s): J. Nakamura, S. Wakui, S. Eguchi, R. Yanai, A. Natori
  • Journal Title: ECS Trans. 11 Pages: 273-273
  • Peer Reviewed
• [Journal Article] Dielectric discontinuity at a twin boundary in Si(111) (2007)
  • Author(s): J. Nakamura, A. Natori
  • Journal Title: Proc. 28th Int. Conf. Semi. Phys. 893 Pages: 5-5
  • Peer Reviewed
• [Journal Article] Nano-Scale Profile of the Dielectric Constant Near the Si/oxide Interface: A First-Principles Approach (2007)
  • Author(s): J. Nakamura, S. Wakui, S. Eguchi, R. Yanai, A. Natori
  • Journal Title: ECS-Trans. 11 Pages: 173-182
  • Peer Reviewed
• [Journal Article] Dielectric discontinuity at a twin boundary in Si (111) (2007)
  • Author(s): J. Nakamura, A. Natori
  • Journal Title: Proc. of the 28th International Conference on the Physics of Semiconductors, J. Menendez and C. G. van de Walle (Eds.)(AIP Proceedings) 893 Pages: 5-6
  • Peer Reviewed
• [Presentation] HfO2・SiO2薄膜における酸素欠損近傍の局所誘電率評価 (2010)
  • Author(s): 涌井貞一
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(神奈川県平塚市)
  • Year and Date: 2010-03-21
• [Presentation] Si(001)/La2O3(01-10)界面の第一原理的バンドオフセット評価 (2010)
  • Author(s): 谷内良亮
  • Organizer: 第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学(神奈川県平塚市)
  • Year and Date: 2010-03-17
• [Presentation] Dielectric properties of GeO2 ultrathin films (2010)
  • Author(s): 田村雅大
  • Organizer: 37th Conference on the Physics and Chemistry of Surfaces and Interfaces
  • Place of Presentation: Santa Fe, New Mexco, USA
  • Year and Date: 2010-01-13
• [Presentation] Ge酸化物超薄膜の誘電特性 (2009)
  • Author(s): 田村雅大
  • Organizer: 第29回表面科学学術講演会
  • Place of Presentation: タワーホール船堀(東京都)
  • Year and Date: 2009-10-27
• [Presentation] 第一原理計算によるSi(001)/ba2O3(01-10)界面のバンドオフセット評価 (2009)
  • Author(s): 谷内良亮
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学(富山県)
  • Year and Date: 2009-09-09
• [Presentation] HfO2薄膜の誘電特性:結晶構造依存性 (2009)
  • Author(s): 涌井貞一
  • Organizer: 第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学(富山県)
  • Year and Date: 2009-09-09
• [Presentation] Nano-scale profile of the dielectric constant near surfaces and interfaces: A first-principles approach (2009)
  • Author(s): J. Nakamura
  • Organizer: 2nd International Workshop on Epitaxial growth and Fundamental Properties of Semiconductor Nanostructures
  • Place of Presentation: SemiconNano 2009(招待講演)
  • Year and Date: 2009-08-12
• [Presentation] Nano-scale profile of the dielectric constant near surfaces and interfaces : A first-principles approach(招待講演) (2009)
  • Author(s): J.Nakamura
  • Organizer: 2nd International Workshop on Epitaxial growth and Fundamental Properties of Semiconductor Nanostructures(SemiconNano 2009)
  • Place of Presentation: Anan, Tokushima, Japan
  • Year and Date: 2009-08-12
• [Presentation] Dielectric constant profiles of the thin-films : alpha- and beta-quartz phases of(Si or Ge)dioxides (2009)
  • Author(s): J.Nakamura
  • Organizer: 12th International Conference on the Formation of Semiconductor Interfaces(ICFSI-12)
  • Place of Presentation: Weimar, Germany
  • Year and Date: 2009-07-07
• [Presentation] In-plane strain effects on dielectric properties of the HfO2 thin film (2009)
  • Author(s): S. Wakui
  • Organizer: 36th Conference on the Physics and Chemistry of Surfaces and Interfaces
  • Place of Presentation: Santa Barbara, USA
  • Year and Date: 2009-01-12
• [Presentation] First-principles evaluat ion of the poly type-dependence of the local dielectric constant for SiC (2008)
  • Author(s): K. Sato
  • Organizer: 5th Internationa1 Sympos ium on SurfaceSc i ence and Nanotechnology (ISSS-5)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2008-11-12
• [Presentation] Dielectric properties of the ultra-thin La203(0001) film (2008)
  • Author(s): R. Yanai
  • Organizer: 5th International Syraposium on Surface Science and Nanotechnology (ISSS-5)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2008-11-11
• [Presentation] Dielectric discontinuity at surfaces and interfaces : a first-principles approach (2008)
  • Author(s): J. Nakamura
  • Organizer: International Conference on Nano Science and Technology (ICN+T 2008)
  • Place of Presentation: Colorado, USA
  • Year and Date: 2008-07-22
• [Presentation] Poly type dependence of permittivity of SiC films (2008)
  • Author(s): J. Nakamura
  • Organizer: 14th International Conference on Solid Films and Surfaces (ICSFS-14)
  • Place of Presentation: Dublin, Ir eland
  • Year and Date: 2008-07-04
• [Presentation] Anomalous enhancement of the local dielectric constant near defects in SiO2 (2008)
  • Author(s): M. Wakui
  • Organizer: 14th International Conference on Solid Films and Surfaces (ICSFS-14)
  • Place of Presentation: Dublin, Ireland
  • Year and Date: 2008-07-02
• [Presentation] Dielectric properties of the Interface between Si and SiO2 (2008)
  • Author(s): S. Wakui, J. Nakamura, A. Natori
  • Organizer: 35th Conference on the Physics and Chemistry of Semiconductor Interfaces
  • Place of Presentation: Santa Fe, NM, USA
• [Presentation] SiO2薄膜中の欠陥近傍における局所誘電率の異常増大 (2008)
  • Author(s): 涌井貞一、中村淳、名取晃子
  • Organizer: 第55回応用物理学関係連合講演会
  • Place of Presentation: 船橋(千葉)
• [Presentation] SiO2/Si(001)界面におけるナノスケール誘電特性の第一原理計算 (2008)
  • Author(s): 涌井貞一、中村淳、名取晃子
  • Organizer: 日本物理学会第63回年次大会
  • Place of Presentation: 東大阪(大阪)
• [Presentation] Nano-scale profile of the dielectric constant near the Si/Oxide interface: A first-principles approach (2007)
  • Author(s): J. Nakamura, S. Wakui, S. Eguchi, R. Yanai, A. Natori
  • Organizer: 212th Electrochemical society (ECS-212)
  • Place of Presentation: Washington D.C., USA
  • Year and Date: 2007-10-09
• [Presentation] Dielectric properties of the Interface between Si and SiO2 (2007)
  • Author(s): S. Wakui, J. Nakamura, A. Natori
  • Organizer: 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-5)
  • Place of Presentation: 八王子(東京)
• [Presentation] Nano-scale profile of the dielectric constant near the Si/Oxide interface: A first-principles approach (2007)
  • Author(s): J. Nakamura, S. Wakui, S. Eguchi, R. Yanai, A. Natori
  • Organizer: 212th Electrochemical society (ECS-212)
  • Place of Presentation: Washington DC, USA
• [Remarks]
  • URL: http://www.natori.ee.uec.ac.jp/junj/index-j.html