X-Ray Photon Correlation Spectroscopy Study of Crystal Growth Dynamics

• Project/Area Number: 19560030
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Japan Atomic Energy Agency
• Principal Investigator: TAKAHASHI Masamitsu Japan Atomic Energy Agency, 量子ビーム応用研究部門, 研究主幹 (00354986)
• Project Period (FY): 2007 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2009: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2008: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000); Fiscal Year 2007: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
• Keywords: 分子線エピタキシー / コヒーレントX線 / その場測定 / 結晶成長 / 放射線、X線、粒子線 / MBE、エピタキシャル

Research Abstract

Dynamics of molecular beam epitaxy has been investigated by X-ray photon correlation spectroscopy. Experiments were performed at the BL11XU synchrotron beamline at SPring-8 using a X-ray diffractometer integrated with a molecular-beam epitaxy chamber. The reflected X-rays were measured with a charge-coupled device camera while compound semiconductors were being grown. Through the temporal changes of speckle patterns characteristic of coherent diffraction, evolution of the surface structures during crystal growth was successfully observed.