Study on the modeling of reactive sputter deposition including the transport process of sputtered and gas particles
| Project/Area Number |
19560048
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied physics, general
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| Research Institution | Seikei University |
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Principal Investigator |
NAKANO Takeo Seikei University, 理工学部, 助教 (40237342)
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| Project Period (FY) |
2007 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2009: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2008: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2007: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | 反応性スパッタリング / モデリング / 薄膜堆積プロセス |
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| Research Abstract |
Reactive sputter deposition process has been studied for the precise control of deposited film composition. We clarified the effects of transport process of sputtered metal atoms and sticking probability of reactive gases. Especially, the former leads the dependence of the composition on total gas pressure, which has not been pre-dicted by conventional process models. We also studied the characteristics of pulse power sputtering, which has been proved to be able to modify the film structure.
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Report
(4 results)
Research Products
(18 results)
