Control of Strain and Orientation of SiGe on Glass for High-Performance Transistor

• Project/Area Number: 19560316
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Kyushu University
• Principal Investigator: SADOH Taizoh Kyushu University, 大学院・システム情報科学研究院, 准教授 (20274491)
• Project Period (FY): 2007 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2008: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000); Fiscal Year 2007: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
• Keywords: 電子デバイス・機器 / 集積回路 / ディスプレイ / シリコンゲルマニウム / 薄膜トランジスタ

Research Abstract

本研究では、ガラス上における薄膜トランジスタの高速・高信頼性化を目的とし、ガラス上におけるSiGe結晶の高品位形成を検討した。更に、ソース/ドレイン電極をシリサイドとしたトランジスタ構造の設計を行うと共に、熱処理プロセスの工夫を行い、従来法では10V程度であったトランジスタ閾値のばらつきを、低減(ばらつき1V程度)し、高い移動度と信頼性を有するトランジスタ動作を実現した。

Research Products

• [Journal Article] Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization (2009)
  • Author(s): K. Toko, T. Sadoh, and M. Miyao
  • Journal Title: Jpn. J. Appl. Phys Vol.48, No.3
  • Peer Reviewed
• [Journal Article] Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si_<1-x>Ge_x(x : 0-1)on Insulating Substrate (2009)
  • Author(s): M.Kurosawa, Y. Tsumira, T. Sadoh, and M. Miyao
  • Journal Title: Jpn. J. Appl. Phys Vol.48, No.3
  • Peer Reviewed
• [Journal Article] Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO_2 Structures (2009)
  • Author(s): T. Sadoh, H. Ohta, and M. Miyao
  • Journal Title: Jpn. J. Appl. Phys. Vol.48, No.3
  • Peer Reviewed
• [Journal Article] Ge Fraction Dependence of Al-Induced Crystallization of SiGeat Low Temperatures (2009)
  • Author(s): M. Kurosawa, Y. Tsumura, T. Sadoh and M. Miyao
  • Journal Title: J. Korean Phys. Soc Vol.54, No.1 Pages: 451-454
  • Peer Reviewed
• [Journal Article] アルミニウム誘起層交換法によるSiGe/ガラスの低温成長 (2009)
  • Author(s): 黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信
  • Journal Title: 電子情報通信学会信学技報 SDM2009-5 Pages: 19-21
  • NAID: 110007227256
• [Journal Article] Position Control of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization (2009)
  • Author(s): K. Toko, et al.
  • Journal Title: Japanese Journal of Applied Physics 48
  • Peer Reviewed
• [Journal Article] Nucleation Controlled Metal-Induced Lateral Crystallization of Amorphous Si_<1-x>Ge_x with Whole Ge Fraction on Insulator (2008)
  • Author(s): T. Sadoh, K. Toko, H. Kanno, S. Masumori, M. Itakura, N. Kuwano, and M. Miyao
  • Journal Title: Jpn. J. Appl. Phys. Vol.47, No.3 Pages: 1876-1879
  • Peer Reviewed
• [Journal Article] Low-Temperature Solid-Phase Crystallization of Amorphous SiGe Films on Glass by Imprint Technique (2008)
  • Author(s): K. Toko, H. Kanno, A. Kenjo, T. Sadoh, T. Asano, and M. Miyao
  • Journal Title: Solid-State Electronics Vol.52, No.8 Pages: 1221-1224
  • Peer Reviewed
• [Journal Article] Formation of SiGe Quasi-Single Crystal Grain on Insulator by Indentation-Induced Solid-Phase Crystallization (2008)
  • Author(s): T. Sadoh, K. Toko, K. Ikeda, S. Hata, M. Itakura, H. Nakashima, M. Nishida, and M.Miyao
  • Journal Title: ECS Transactions Vol.16 No.10 Pages: 219-222
  • Peer Reviewed
• [Journal Article] 次世代TFTに向けたa-Ge/石英の低温固相成長 (2008)
  • Author(s): 中尾勇兼, 都甲薫, 野口隆, 佐道泰造
  • Journal Title: 電子情報通信学会信学技報 SDM2008-17 Pages: 83-88
  • NAID: 110006792721
• [Journal Article] 金属触媒誘起固相成長法による多結晶Ge/絶縁膜の低温形成~電界印加効果、触媒種効果~ (2008)
  • Author(s): 萩原貴嗣, 都甲薫, 佐道泰造
  • Journal Title: 電子情報通信学会信学技報 SDM2008-17 Pages: 101-105
  • NAID: 110006792724
• [Journal Article] 縁膜上における非晶質SiGeのインデント誘起固相成長 (2008)
  • Author(s): 都甲薫, 佐道泰造, 宮尾正信
  • Journal Title: 電気学会・電子材料研究会資料 EFM-08-29 Pages: 31-34
• [Journal Article] Ni-Imprint Induced Solid-Phase Crystallization in Si_<1-x>Ge_x(x : 0-1) on Insulator (2007)
  • Author(s): K. Toko, H. Kanno, A. Kenjo, T. Sadoh, T. Asano, and M. Miyao
  • Journal Title: Appl. Phys. Lett Vol.91, No.4
  • Peer Reviewed
• [Journal Article] Comparative Study of Al-Induced Crystallization for Poly-Si and Ge on Insulating Film (2007)
  • Author(s): Y. Tsumura, I. Nakao, H. Kanno, A. Kenjo, T. Sadoh, and M. Miyao
  • Journal Title: ECS Transactions Vol.11, No.6 Pages: 395-402
  • Peer Reviewed
• [Journal Article] High-Performance Poly-Ge Thin-Film Transistor with NiGe Schottky Source/Drain (2007)
  • Author(s): T. Sadoh, H. Kamizuru, A. Kenjo and M. Miyao
  • Journal Title: Materials Science Forum Vol.561-565 Pages: 1181-1184
  • Peer Reviewed
• [Journal Article] Ni-Imprint Induced Solid-Phase Crystallization in Si_1-xGe_x(x:0-1)on Insulator (2007)
  • Author(s): K. Toko, et. al.
  • Journal Title: Appliedd Physics Letters 91
  • Peer Reviewed
• [Presentation] アルミニウム誘起層交換法によるSiGe/ガラスの低温成長 (2009)
  • Author(s): 黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信
  • Organizer: 電子情報通信学会研究会, SDM-7
  • Place of Presentation: 鳥栖
  • Year and Date: 2009-04-24
• [Presentation] Improvement of Electrical Characteristics of Poly-Ge by Two-Step Solid-Phase Crystallization (2009)
  • Author(s): T. Sadoh, I. Nakao, K. Toko, T. Noguchi, and M. Miyao
  • Organizer: ITC' 09, Palaiseau
  • Place of Presentation: Palaiseau, France
• [Presentation] Formation of Single Crystalline Ge on Insulator by Liquid-Phase Epitaxy from Ni-Imprint-Induced Si Seed (2009)
  • Author(s): K. Toko, T. Sakane, T. Tanaka, T. Sadoh, and M. Miyao
  • Organizer: ITC' 09, Palaiseau
  • Place of Presentation: France
• [Presentation] 金属触媒誘起横方向成長法による多結晶Geの極低温成長 (2009)
  • Author(s): 佐道泰造, 萩原貴嗣, 黒澤昌志, 都甲薫, 権丈淳
  • Organizer: 第56回応用物理学関係連合講演会, 1a-T-3
  • Place of Presentation: 筑波
• [Presentation] 2段熱処理固相成長法による多結晶Geの高品質形成 (2009)
  • Author(s): 佐道泰造, 中尾勇兼, 都甲薫, 野口隆
  • Organizer: 第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波
• [Presentation] インプリント法による非晶質Siの方位制御結晶化とGeの歪ヘテロエピタキシャル成長 (2009)
  • Author(s): 坂根尭, 都甲薫, 田中貴規, 佐道泰造, 宮尾正信
  • Organizer: 第56回応用物理学関係連合講演会, 1a-T-6
  • Place of Presentation: 筑波
• [Presentation] 界面酸化膜制御によるSi_<1-x>Ge_x(0≦x≦1)混晶のAl誘起層交換成長 (2009)
  • Author(s): 黒澤昌志, 佐道泰造, 宮尾正信
  • Organizer: 第56回応用物理学関係連合講演会, 30a-TF-9
  • Place of Presentation: 筑波
• [Presentation] Si/Ge多層構造のAl誘起層交換成長とSi-Geミキシング (2009)
  • Author(s): 黒澤昌志, 川畑直之, 佐道泰造, 宮尾正信
  • Organizer: 第56回応用物理学関係連合講演会, 30a-TF-10
  • Place of Presentation: 筑波
• [Presentation] AIC法で作製したSi_<0.5>Ge_<0.5>薄膜の微細構造解析 (2009)
  • Author(s): 犬塚純平, 板倉賢, 西田稔, 黒澤昌志, 佐道泰造, 宮尾正信
  • Organizer: 第56回応用物理学関係連合講演会, 1a-T-5
  • Place of Presentation: 第56回応用物理学関係連合講演会
• [Presentation] 絶縁膜上における非晶質SiGeのインデント誘起固相成長 (2008)
  • Author(s): 都甲薫, 佐道泰造, 宮尾正信
  • Organizer: 電子材料研究会, EFM-08-29
  • Place of Presentation: 仙台
  • Year and Date: 2008-09-27
• [Presentation] 絶縁膜上におけるSiGe成長とデバイス応用 (2008)
  • Author(s): 佐道泰造, 都甲薫
  • Organizer: 電気学会電子材料研究会
  • Place of Presentation: 東京
  • Year and Date: 2008-08-01
• [Presentation] ナノインデント法で結晶化させたSi薄膜の微細構造評価 (2008)
  • Author(s): 村田大輔, 板倉賢, 西田稔, 佐道泰造, 宮尾正信
  • Organizer: 日本金属学会九州支部
  • Place of Presentation: 福岡
  • Year and Date: 2008-06-08
• [Presentation] Formation of SiGe Quasi-Single Crystal Grain on Insulator by Indentation-Induced Solid-Phase Crystallization (2008)
  • Author(s): T. Sadoh, K. Toko, K. Ikeda, S. Hata, M. Itakura, H. Nakashima, M. Nishida, and M. Miyao
  • Organizer: ECS-PRiME 2008, E15-23-2396
  • Place of Presentation: Hawaii, U.S.A.
• [Presentation] Indentation-Induced Solid-Phase Crystallization of SiGe on Insulator (2008)
  • Author(s): K. Toko, T. Sadoh, and M. Miyao
  • Organizer: New Group IV Semiconductor Nanoelectronics, Z-07
  • Place of Presentation: Sendai, Japan
• [Presentation] Effects of Si-Layer Thickness on Solid-Phase Crystalization of Stacked Ge/Si/SiO2 Structure (2008)
  • Author(s): T. Sadoh, H. Ohta, M. Miyao
  • Organizer: AM-FPD 08, 3-2
  • Place of Presentation: Tokyo, Japan
• [Presentation] Position Control of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization (2008)
  • Author(s): K.Toko, T. Sadoh, and M. Miyao
  • Organizer: AM-FPD 08, P-15
  • Place of Presentation: Tokyo, Japan
• [Presentation] Interfacial-Oxide Controlled Al-Induced Crystallization of Si_<1-x>Ge_x(x : 0-1)on Insulating Substrate (2008)
  • Author(s): M. Kurosawa, Y. Tsumura, T. Sadoh, and M. Miyao
  • Organizer: AM-FPD 08, P-16
  • Place of Presentation: Tokyo, Japan
• [Presentation] Low-Temperature(111)-Oriented SiGe Growth on Insulating Substrate by Al-Induced Crystallization (2008)
  • Author(s): T. Sadoh, Y. Tsumura, M. Kurosawa, and M. Miyao
  • Organizer: 4th ISTDM 2008, S3-04
  • Place of Presentation: Hsinchu, Taiwan
• [Presentation] Electrical Properties of Poly-Ge on Glass Substrate Grown by Two-Step Solid-Phase Crystallization (2008)
  • Author(s): K. Toko, I. Nakao, T. Sadoh, T. Noguchi, and M. Miyao
  • Organizer: 4th ISTDM 2008, S2-04
  • Place of Presentation: Hsinchu, Taiwan
• [Presentation] Ge Fraction Dependence of Al-Induced Crystallization of SiGe at Low-Temperature (2008)
  • Author(s): M. Kurosawa, Y. Tsumura, T. Sadoh, and M. Miyao
  • Organizer: ITC '08, LTPS-2-1
  • Place of Presentation: Seoul, Korea
• [Presentation] Low Temperature Solid-Phase Crystallization of a-Ge on Glass Substrate for Advanced Thin-Film Transistor (2008)
  • Author(s): T. Sadoh, K. Toko, T. Noguchi, and M. Miyao
  • Organizer: ITC '08, LTPS-P29
  • Place of Presentation: Seoul, Korea
• [Presentation] Si/Ge多層構造に於けるAl誘起層交換成長とSi/Ge相互拡散 (2008)
  • Author(s): 黒澤昌志, 津村宜孝, 佐道泰造, 宮尾正信
  • Organizer: 第69回応用物理学会学術講演会, 2a-CH-10
  • Place of Presentation: 愛知
• [Presentation] ナノインデント誘起固相成長法によるSGOIの方位制御 (2008)
  • Author(s): 都甲薫, 萩原隆嗣, 佐道泰造
  • Organizer: 第69回応用物理学会学術講演会, 2a-CH-8
  • Place of Presentation: 愛知
• [Presentation] 金属触媒誘起固相成長法による多結晶Ge/絶縁膜の低温形成 : 電界印加効果、触媒種効果 (2008)
  • Author(s): 萩原貴嗣, 都甲薫, 佐道泰造
  • Organizer: 電子情報通信学会研究会SDM, 12-21
  • Place of Presentation: 沖縄
• [Presentation] 次世代TFTに向けたa-Ge/石英の低温固相成長 (2008)
  • Author(s): 中尾勇兼, 都甲薫, 野口隆, 佐道泰造
  • Organizer: 電子情報通信学会研究会 SDM, 12-18
  • Place of Presentation: 沖縄
• [Presentation] ガラス基板上における非晶質Geの低温固相成長 (2008)
  • Author(s): 佐道泰造, 都甲薫, 中尾勇兼, 野口隆, 宮尾正信
  • Organizer: 第55回応用物理学関係連合講演会, 27a-G-3
  • Place of Presentation: 千葉
• [Presentation] SiGeのAl誘起層交換成長に与える界面酸化膜効果 (2008)
  • Author(s): 黒澤昌志, 津村宜孝, 佐道泰造, 宮尾正信
  • Organizer: 第55回応用物理学関係連合講演会, 27a-G-1
  • Place of Presentation: 千葉
• [Presentation] Position Control of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization (2008)
  • Author(s): K. Toko, et al.
  • Organizer: AM-FPD 08
  • Place of Presentation: 東京都
• [Presentation] High-Performance Poly-Ge Thin-Film Transistor with NiGe Schottky Source/Drain (2007)
  • Author(s): T. Sadoh, H. Kamizuru, A. Kenjo, and M. Miyao
  • Organizer: PRICM 6, 9-4-5
  • Place of Presentation: Jeju Island, Korea
• [Presentation] Comparative Study of Al-Induced Crystallization for Poly-Si and Ge on Insulating Film (2007)
  • Author(s): Y. Tsumura, I. Nakao, H. Kanno, A. Kenjo, T. Sadoh, and M. Miyao
  • Organizer: 212th ECS Meeting, 1294
  • Place of Presentation: Washington D.C. , U.S.A.
• [Presentation] Catalytic Effect of Ni in Crystallization of Amorphous SiGe Films by Imprint Technique (2007)
  • Author(s): K. Toko, H. Kanno, A. Kenjo, T. Sadoh, T. Asano, and M. Miyao
  • Organizer: AM-FPD 07 , 9-4
  • Place of Presentation: Awaji, Japan
• [Presentation] Nucleation Controlled Metal-Induced Lateral Crystallization of Amorphous Si1-xGex with Whole Ge Fraction on Insulator (2007)
  • Author(s): T. Sadoh, K. Toko, H. Kanno, S. Masumori, M. Itakura, N. Kuwano, and M. Miyao
  • Organizer: AM-FPD 07 , 9-5
  • Place of Presentation: Awaji, Japan
• [Presentation] Low-Temperature Fabrication of Advanced Thin-Film Transistor with Ge Channel and Schottky Source/Drain (2007)
  • Author(s): T. Sadoh, H. Kamizuru, A. Kenjo, and M. Miyao
  • Organizer: ICSI-5, 5th International Conference on Silicon Epitaxy and Heterostructures, S6-O12
  • Place of Presentation: Marseille France
• [Presentation] Position Controlled Solid-Phase Crystallization of SiGe by Ni-Imprint Technique (2007)
  • Author(s): T. Sadoh, K. Toko, H. Kanno, T. Asano, and M. Miyao
  • Organizer: ICSI-5, 5th International Conference on Silicon Epitaxy and Heterostructures, 21P 1-29
  • Place of Presentation: Marseille France
• [Presentation] Al誘起層交換成長法による多結晶SiGe薄膜の低温形成 (2007)
  • Author(s): 津村宜孝, 権丈淳, 佐道泰造. 宮尾正信
  • Organizer: 薄膜材料デバイス研究会第4回研究集会, IIa-2
  • Place of Presentation: 京都
• [Presentation] 絶縁膜上におけるSiGeのAl誘起層交換成長 (2007)
  • Author(s): 津村宜孝, 中尾勇兼, 権丈淳, 佐道泰造, 宮尾正信
  • Organizer: 第68回応用物理学会学術講演会6a-P10-28
  • Place of Presentation: 札幌
• [Presentation] Catalytic Effect of Ni in Crystallization of Amorphous SiGe Films by Imprint Technique (2007)
  • Author(s): K. Toko, et. al.
  • Organizer: AM-FPD07
  • Place of Presentation: 兵庫県・淡路市