Crystal growth of nitride semiconductors by electric field enhanced MOCVD

• Project/Area Number: 19560321
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Tokai University
• Principal Investigator: INUSHIMA Takashi Tokai University, 工学部, 教授 (20266381)
• Project Period (FY): 2007 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2008: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2007: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
• Keywords: 電気 / 電子材料 / 電界効果MOCVD / AIN / 結晶極性 / MOCVD / 電界効果 / ナイトライド半導体 / InN

Research Abstract

ナイトライド半導体AlNとInNの結晶作成時と降温時に結晶c-軸方向に高電界を印加して結晶の分極方向を制御することを試みた。MOCVD装置内に設置した石英製インナー管の基板上部3ミリの位置に上部Mo電極を配し、結晶を成長させるMoサセプタを下部電極としてこの両電極間に1kV/cmの電界を印加した。AlNでは明確な電界効果が観測され、電界の方向にそろった単一ドメイン構造結晶を得たが、InNについては明確な効果は観測されなかった。

Research Products

• [Journal Article] Impurity band structure of boron-doped homoepitaxail diamond (2009)
  • Author(s): T. Inushima, R. F. Mamin and H. Shiomi
  • Journal Title: Phys. Rev. B79 Pages: 45210-45210
  • Peer Reviewed
• [Journal Article] Crystal growth of InN by MOCVD with electric field along the c-axis (2009)
  • Author(s): Yuichi Ota, Ramkrishna Biswas, Masaaki Higo and Takashi Inushima
  • Journal Title: J. Crystal Growth 311 Pages: 2806-2806
  • Peer Reviewed
• [Journal Article] Impurity band structure of boron-doped diamond (2009)
  • Author(s): T. Inushima, R. F. Mamin, H. Shiomi
  • Journal Title: Physical Review B 79
  • Peer Reviewed
• [Journal Article] Crystal growth of InN by MOCVD wi th electric field along the c-axis (2009)
  • Author(s): Y. Ota, R. Biswas, M. Higo, T. Inushima
  • Journal Title: J. Crystal Growth (印刷中)
  • Peer Reviewed
• [Journal Article] Phonon polariton of InN observed by infrared synchrotron radiation (2008)
  • Author(s): T. Imushima, K. Fukui, H. Lu and W. J. Schaff
  • Journal Title: Applied Physics Letters 92 Pages: 171905-171905
  • Peer Reviewed
• [Journal Article] Phonon polariton of InN observed by infrared synchrotron radiation (2008)
  • Author(s): T. Inushima, K. Fukui, Hai Lu, W. J. Schaff
  • Journal Title: Applied Physics Letters 92
  • Peer Reviewed
• [Journal Article] Phonon-polariton of Superconducting InN observed by Far-infrared Synchrotron Radiation (2007)
  • Author(s): T. Inushima, Y. Ota, T. Yamnagawa and K. Fukui
  • Journal Title: UVSOR activity report Pages: 92-92
• [Presentation] 電界効果MOCVDによるAINの合成と評価 (2009)
  • Author(s): 太田優一, 犬島 喬
  • Organizer: 第56回応用物理学会
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-03-31
• [Presentation] 電界効果MOCVDによるAlNの合成と評価 (2009)
  • Author(s): 太田優一,犬島 喬
  • Organizer: 第56回応用物理連合講演会
  • Place of Presentation: 筑波
• [Presentation] フォノンポラリトンによるGaNとInNの結晶性比較 (2009)
  • Author(s): 大塚恭弘,太田優一,犬島 喬,柳川徹、福井一俊
  • Organizer: 第56回応用物理学会
  • Place of Presentation: 筑波
• [Presentation] 電界効果MOCVDによるナイトライド半導体の合成と評価 (2008)
  • Author(s): 太田 優一、ビスワスラム クリシュナ、犬島 喬
  • Organizer: 応用物理学会
  • Place of Presentation: 日本大学理工学部(船橋)
  • Year and Date: 2008-03-27
• [Presentation] Crystal growth of InN by MOCVD under strong electric field along c-axis, 2nd International Symposium on growth of III-nitrides (2008)
  • Author(s): Yuichi Ota, Ramkrishna Biswas, Masaaki Higo and Takashi Inushima
  • Organizer: Japan Association for Crystal Growth Cooperation