Single photon emitter using single electron transistor
| Project/Area Number |
19681016
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | The University of Tokyo |
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Principal Investigator |
NAKAOKA Toshihiro The University of Tokyo, 生産技術研究所, 特任准教授 (20345143)
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| Project Period (FY) |
2007 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥20,280,000 (Direct Cost: ¥15,600,000、Indirect Cost: ¥4,680,000)
Fiscal Year 2009: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2008: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2007: ¥17,420,000 (Direct Cost: ¥13,400,000、Indirect Cost: ¥4,020,000)
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| Keywords | 単電子トランジスタ / 単一光子素子 / 量子ドット |
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| Research Abstract |
In this study, we have developed a single photon emitter with single electron transistor. The aim is to control number of electrons in a dot before emitting single photons. We have succeeded in fabricating a single electron device based on a quantum dot with a capping layer. We have shown a gate controlled photoluminescence and photocurrent from the dots embedded in the device structure.
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Report
(3 results)
Research Products
(22 results)
