Optical characterization of AlN p-n junction diode

• Project/Area Number: 19686003
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Applied materials science/Crystal engineering
• Research Institution: NTT Basic Research Laboratories
• Principal Investigator: TANIYASU Yoshitaka NTT Basic Research Laboratories, 機能物質科学研究部, 主任研究員 (20393738)
• Project Period (FY): 2007 – 2009
• Project Status: Completed (Fiscal Year 2009)
• Budget Amount: ¥25,610,000 (Direct Cost: ¥19,700,000、Indirect Cost: ¥5,910,000); Fiscal Year 2009: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000); Fiscal Year 2008: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000); Fiscal Year 2007: ¥14,170,000 (Direct Cost: ¥10,900,000、Indirect Cost: ¥3,270,000)
• Keywords: 結晶工学 / 結晶成長 / 先端機能デバイス / 半導体物性 / 光物性 / 窒化物半導体 / A1N / 発光ダイオード / 紫外

Research Abstract

深紫外半導体発光デバイス材料として期待されている窒化アルミニウム(AlN)の基礎物性を解明するため、pn接合型AlN深紫外発光ダイオード(LED)などを作製して、それらの特性を評価した。まず、AlNの励起子物性、結晶欠陥の光電子物性、p型ドーピング機構などを解明した。また、AlNはバンド構造の特殊性から、従来の半導体にはなかった強い偏光性を有することを明らかにした。このAlN特有の強い偏光性を活かした高効率AlN深紫外LED構造を提案して、動作確認を行った。

Research Products

• [Journal Article] Improved Emission Efficiency of 210-nm Deep-ultraviolet Aluminum Nitride Light-emitting Diode (2010)
  • Author(s): Y. Taniyasu, M. Kasu
  • Journal Title: NTT Technical Review (掲載予定)
• [Journal Article] Surface 210-nm light emission from an AlN p-n junction light-emitting diode enhanced by A-plane growth orientation (2010)
  • Author(s): Y. Taniyasu, M. Kasu
  • Journal Title: Applied Physics Letters Vol.96 Pages: 221110-221110
  • Peer Reviewed
• [Journal Article] 波長210nm遠紫外発光ダイオードの高効率化 (2010)
  • Author(s): 谷保芳孝、嘉数誠
  • Journal Title: NTT技術ジャーナル 6巻 Pages: 40829-40829
• [Journal Article] AlNの光電子物性と波長210nm発光ダイオード (2010)
  • Author(s): 谷保芳孝、嘉数誠
  • Journal Title: 応用電子物性分科会誌 16巻、第2号 Pages: 57-62
• [Journal Article] Surface 210-nm light emission from an AIN p-n junction light-emitting diode enhanced by A-plane growth orientation (2010)
  • Author(s): Y.Tanyasu
  • Journal Title: Applied Physics Letters (accepted)
  • Peer Reviewed
• [Journal Article] Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering (2009)
  • Author(s): R.A.R. Leute, M. Feneberg, R. Sauer, K. Thonke, S.B. Thapa, F. Scholz, Y. Taniyasu, M. Kasu
  • Journal Title: Applied Physics Letters Vol.95 Pages: 31903-31903
  • Peer Reviewed
• [Journal Article] Photoluminescence of highly excited AIN : biexciton and exciton-exciton scattering (2009)
  • Author(s): R.Leute
  • Journal Title: Applied Physics Letters 95 Pages: 31903-31903
  • Peer Reviewed
• [Journal Article] Aluminum nitride deep-ultraviolet light-emitting p-n junction diodes (2008)
  • Author(s): Y. Taniyasu, M. Kasu
  • Journal Title: Diamond & Related Materials Vol.17 Pages: 1273-1277
  • Peer Reviewed
• [Journal Article] Aluminum nitride deep-ultraviolet light-emitting p-n junction diodes (2008)
  • Author(s): Y. Taniyasu and M. Kasu
  • Journal Title: Diamond & Related Materials 17 Pages: 1273-1277
  • Peer Reviewed
• [Journal Article] Radiation and polarization properties of free-exciton emission from AlN (0001) surface (2007)
  • Author(s): Y. Taniyasu, M. Kasu, T. Makimoto
  • Journal Title: Applied Physics Letters Vol.90 Pages: 261911-261911
  • Peer Reviewed
• [Journal Article] 窒化アルミニウム(aln)発光ダイオード (2007)
  • Author(s): 谷保芳孝
  • Journal Title: 化学と工業 8巻 Pages: 783-785
• [Journal Article] Radiation and polarization properties of free-exciton emission from AIN(0001)surface (2007)
  • Author(s): Y.Taniyasu
  • Journal Title: Applied Physics Letters 90
  • Peer Reviewed
• [Journal Article] 窒化アルミニウム(AlN)発光ダイオード (2007)
  • Author(s): 谷保 芳孝
  • Journal Title: 化学と工業 8 Pages: 783-785
• [Presentation] AlNの光電子物性と波長210nm発光ダイオード (2010)
  • Author(s): 谷保芳孝、嘉数誠
  • Organizer: 応用電子物性分科会研究例会
  • Place of Presentation: 大阪大学
  • Year and Date: 2010-05-21
• [Presentation] 【招待講演】AINの光電子物性と波長210nm発光ダイオード (2010)
  • Author(s): 谷保芳孝
  • Organizer: 応用電子物性分科会研究例会
  • Place of Presentation: 大阪大学
  • Year and Date: 2010-05-21
• [Presentation] p型MgドープAlNおよび高Al組成AlGaNの伝導制御 (2010)
  • Author(s): 谷保芳孝、嘉数誠
  • Organizer: 2010年春季第57回応用物理学会
  • Place of Presentation: 東海大学
  • Year and Date: 2010-03-18
• [Presentation] p型MgドープAINおよび高A1組成AlGaNの伝導制御 (2010)
  • Author(s): 谷保芳孝
  • Organizer: 2010年春季第57回応用物理学会
  • Place of Presentation: 東海大学
  • Year and Date: 2010-03-18
• [Presentation] Non-c-plane 210-nm AlN light-emitting diode (2009)
  • Author(s): Y. Taniyasu, M. Kasu
  • Organizer: The 8th International Conference on Nitride semiconductors (ICNS-8)
  • Place of Presentation: Jeju, Korea
  • Year and Date: 2009-10-22
• [Presentation] Non-c-plane 210-nm AIN light-emitting diode (2009)
  • Author(s): Y.Taniyasu
  • Organizer: The 8th International Conference on Nitride semiconductors (ICNS-8)
  • Place of Presentation: Jeju, Korea
  • Year and Date: 2009-10-22
• [Presentation] a面AlN発光ダイオードからの波長210nm遠紫外発光 (2009)
  • Author(s): 谷保芳孝、嘉数誠
  • Organizer: 2009年秋季第70回応用物理学会
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-10
• [Presentation] a面AIN発光ダイオードからの波長210nm遠紫外発光 (2009)
  • Author(s): 谷保芳孝
  • Organizer: 2009年秋季第70回応用物理学会
  • Place of Presentation: 富山大学
  • Year and Date: 2009-09-10
• [Presentation] High excitation photoluminescence bands in AlN (2009)
  • Author(s): R. Leute, M. Feneberg, K. Thonke, R. Sauer, S. Thapa, F. Scholz, Y. Taniyasu, M. Kasu
  • Organizer: e-MRS 2009 Spring Meeting
  • Place of Presentation: Strasbourg, France
  • Year and Date: 2009-06-08
• [Presentation] High excitation photoluminescence bands in AIN (2009)
  • Author(s): R.Leute
  • Organizer: e-MRS 2009 Spring Meeting
  • Place of Presentation: Strasbourg, France
  • Year and Date: 2009-06-08
• [Presentation] High excitation photoluminescence studies on epitaxially grown AlN layers (2009)
  • Author(s): R. Leute, M. Feneberg, K. Thonke, R. Sauer, S. Thapa, F. Scholz, Y. Taniyasu, M. Kasu
  • Organizer: Deutsche Physikalische Gesellschaft conference (DPG2009)
  • Place of Presentation: Dresden, Germany
  • Year and Date: 2009-03-24
• [Presentation] High excitation photoluminescence studies on epitaxially grown AlN layers (2009)
  • Author(s): R. Leute
  • Organizer: Deutsche Physikalische Gesellscaft conference(DPG2009)
  • Place of Presentation: Dresden, Germany
  • Year and Date: 2009-03-24
• [Presentation] Y. Taniyasu and M. Kasu, Recent progress in AlN deep-UV light-emitting diodes: physics and device structure, SPIE Photonic West 2009 (2009)
  • Author(s): Y. Taniyasu, M. Kasu
  • Organizer: Gallium Nitride Materials and Devices IV
  • Place of Presentation: San Jose, USA
  • Year and Date: 2009-01-29
• [Presentation] Recent progress in AlN deep-UV light-emitting diodes: physics and device structure (2009)
  • Author(s): Y. Taniyasu
  • Organizer: SPIE Photonic West 2009, "Gallium Nitride Materials and Devices IV"
  • Place of Presentation: San Jose, USA
  • Year and Date: 2009-01-29
• [Presentation] Increase in free-exciton emission intensity from AlN by using m-plane (2008)
  • Author(s): Y. Taniyasu, M. Kasu
  • Organizer: International Workshop on Nitride semiconductors (IWN 2008)
  • Place of Presentation: Montreux, Switzerland
  • Year and Date: 2008-10-09
• [Presentation] Increase in free-exciton emission intensity from AlN by using m-plane (2008)
  • Author(s): Y. Taniyasu
  • Organizer: International Workshop on Nitride semiconductors (IWN 2008)
  • Place of Presentation: Monteux, Switzerland
  • Year and Date: 2008-10-09
• [Presentation] 櫛形メサ構造によるaln遠紫外発光ダイオードの発光強度の増大 (2008)
  • Author(s): 谷保芳孝、嘉数誠
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学、春日井
  • Year and Date: 2008-09-05
• [Presentation] 櫛形メサ構造によるAlN遠紫外発光ダイオードの発光強度の増大 (2008)
  • Author(s): Y. Taniyasu
  • Organizer: 第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学、春日井
  • Year and Date: 2008-09-05
• [Presentation] Influence of dislocations on AlN deep-UV light-emitting diodes (2008)
  • Author(s): Y. Taniyasu, M. Kasu
  • Organizer: The 4th Asian Conference on Crystal Growth and Crystal Technology (CGCT4)
  • Place of Presentation: Sendai, Japan
  • Year and Date: 2008-05-24
• [Presentation] Influence of dislocations on AlN deep-UV light-emitting diodes (2008)
  • Author(s): Y. Taniyasu
  • Organizer: The 4th Asian Conference on Crystal Growth and Crystal Technology (CGCT4)
  • Place of Presentation: Sendai, Japan
  • Year and Date: 2008-05-24
• [Presentation] m面alnによるバンド端発光強度の増大 (2008)
  • Author(s): 谷保芳孝、嘉数誠
  • Organizer: 第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学、船橋
  • Year and Date: 2008-03-29
• [Presentation] AlN deep-UV light-emitting diodes (2007)
  • Author(s): Y. Taniyasu, M. Kasu, T. Makimoto
  • Organizer: 18th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides (Diamond 2007)
  • Place of Presentation: Maritim hotel, Berlin, Germany
  • Year and Date: 2007-09-13
• [Presentation] AIN deep-UV light-emitting diodes (2007)
  • Author(s): Y.Taniyasu
  • Organizer: 18th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, andNitrides (Diamond 2007)
  • Place of Presentation: Maritim hotel,Berlin,Germany
  • Year and Date: 2007-09-13
• [Presentation] 負の結晶場分裂エネルギーに起因したaln発光ダイオードの偏光特性 (2007)
  • Author(s): 谷保芳孝、嘉数誠、牧本俊樹
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学、札幌
  • Year and Date: 2007-09-08
• [Presentation] 負の結晶場分裂エネルギーに起因したAlN発光ダイオードの偏光特性 (2007)
  • Author(s): 谷保 芳孝
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学、札幌
  • Year and Date: 2007-09-08
• [Presentation] aln:pnドーピングと遠紫外l ed (2007)
  • Author(s): 谷保芳孝、嘉数誠、牧本俊樹
  • Organizer: 第26回電子材料シンポジウム
  • Place of Presentation: ラフォーレ琵琶湖、大津
  • Year and Date: 2007-07-06
• [Presentation] AlN:pnドーピングと遠紫外LED (2007)
  • Author(s): 谷保 芳孝
  • Organizer: 第26回電子材料シンポジウム
  • Place of Presentation: ラフォーレ琵琶湖、大津
  • Year and Date: 2007-07-06
• [Presentation] aln深紫外ledの現状と展望 (2007)
  • Author(s): 谷保芳孝、嘉数誠、牧本俊樹
  • Organizer: 応用物理学会関西支部主催セミナー「窒化物半導体のフロンティア」
  • Place of Presentation: グランキューブ大阪/大阪国際会議場、大阪
  • Year and Date: 2007-06-18
• [Presentation] AlN深紫外LEDの現状と展望 (2007)
  • Author(s): 谷保 芳孝
  • Organizer: 応用物理学会関西支部主催セミナー「窒化物半導体のフロンティア」
  • Place of Presentation: グランキューブ大阪/大阪国際会議場、大阪
  • Year and Date: 2007-06-18
• [Presentation] Deep-UV light emitting diodes by MOVPE (2007)
  • Author(s): Y. Taniyasu, M. Kasu, T. Makimoto
  • Organizer: European Workshop on Metal Organic Vapor Phase Epitaxy (EW-MOVPE)
  • Place of Presentation: SUZU hotel, Bratislava, Slovakia
  • Year and Date: 2007-06-05
• [Presentation] Deep-UV light emitting diodes by MOVPE (2007)
  • Author(s): Y.Taniyasu
  • Organizer: European Workshop on Metal Organic Vapor PhaseEpitaxy(EW-MOVPE)
  • Place of Presentation: SUZU hotel,Bratislava,Slovakia
  • Year and Date: 2007-06-05
• [Presentation] AlN deep-ultraviolet light-emitting diodes (2007)
  • Author(s): Y. Taniyasu, M. Kasu, T. Makimoto
  • Organizer: 14th Semiconducting and Insulating Materials Conferences (SIMC XIV)
  • Place of Presentation: University of Arkansas, Arkansas, USA
  • Year and Date: 2007-05-18
• [Presentation] AIN deep-ultraviolet light-emitting diodes (2007)
  • Author(s): Y.Taniyasu
  • Organizer: 14th Semiconducting and Insulating MaterialsConferences(SIMC XIV)
  • Place of Presentation: University of Arkansas,Arkansas,USA
  • Year and Date: 2007-05-18
• [Book] 紫外LED(平成21年度光技術動向調査報告書, 第1.5.1節) (2010)
  • Author(s): 谷保芳孝
  • Publisher: 財団法人光産業技術振興協会
• [Book] 平成21年度光技術動向調査報告書 第1.5.1節 紫外LED (2010)
  • Author(s): 谷保芳孝
  • Total Pages: 4
  • Publisher: 財団法人光産業技術振興協会
• [Remarks] 報道発表2008年1月25日掲載、日経産業新聞(8面)、「紫外線led発光強度6倍」
• [Remarks] 表彰受賞者:Yoshitaka Taniyasu表彰名称:Young Scientist Award表彰業績名:For outstanding contributionsin developing and implementing AluminumNitride deep-ultraviolet light-emittingdiodes表彰主催団体名: Semiconducting andInsulating Materials Conferences (SIMCXIV)表彰年月日:平成19年5月17日
• [Remarks]
  • URL: http://www.brl.ntt.co.jp/people/taniyasu/