| Budget Amount *help |
¥24,960,000 (Direct Cost: ¥19,200,000、Indirect Cost: ¥5,760,000)
Fiscal Year 2009: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2008: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
Fiscal Year 2007: ¥11,440,000 (Direct Cost: ¥8,800,000、Indirect Cost: ¥2,640,000)
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| Research Abstract |
The large signal analysis of laser transistors, which have quantum wells in the base layer of hetero bipolar transistors, has been demonstrated for the first time. The simulation indicates better eye diagram over 40Gbps can be achieved for the laser transistors compared with conventional laser diodes.
To realize the laser transistors, AlGaInAs quantum well buried hetero laser diodes were used to quantify non-radiative recombination velocity by comparison of spontaneous emission intensity toward establishment of regrowth process of AlGaInAs buried hetero structure.
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