Realization of high performance long wavelength laser transistors
| Project/Area Number |
19686023
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
NISHIYAMA Nobuhiko Tokyo Institute of Technology, 大学院・理工学研究科, 准教授 (80447531)
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| Project Period (FY) |
2007 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥24,960,000 (Direct Cost: ¥19,200,000、Indirect Cost: ¥5,760,000)
Fiscal Year 2009: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2008: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
Fiscal Year 2007: ¥11,440,000 (Direct Cost: ¥8,800,000、Indirect Cost: ¥2,640,000)
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| Keywords | 高性能レーザ / 半導体レーザ / InP / レーザトランジスタ / フォトニックネットワーク |
|---|
| Research Abstract |
The large signal analysis of laser transistors, which have quantum wells in the base layer of hetero bipolar transistors, has been demonstrated for the first time. The simulation indicates better eye diagram over 40Gbps can be achieved for the laser transistors compared with conventional laser diodes.
To realize the laser transistors, AlGaInAs quantum well buried hetero laser diodes were used to quantify non-radiative recombination velocity by comparison of spontaneous emission intensity toward establishment of regrowth process of AlGaInAs buried hetero structure.
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Report
(4 results)
Research Products
(91 results)
