| Budget Amount *help |
¥26,260,000 (Direct Cost: ¥20,200,000、Indirect Cost: ¥6,060,000)
Fiscal Year 2009: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2008: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Fiscal Year 2007: ¥17,160,000 (Direct Cost: ¥13,200,000、Indirect Cost: ¥3,960,000)
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| Research Abstract |
The GeO desorption from GeO_2 films on Ge is caused by the combination of two reactions occurring at the top and bottom interfaces, respectively, and the desorption rate is described by the diffusion-limited model through the GeO_2 film. It induces the oxygen-deficiency-related defects in the films, which is clearly detected as the increase of sub-gap photo absorption. The significant improvement of electrical characteristics was demonstrated through the suppression of defect generation by the introduction of a cap layer on top of GeO_2 film, or the control of oxygen partial pressure during the thermal treatment. The enhancement of the controllability of the interface properties by the coexisting high-k materials was also demonstrated.
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