Study on Ge surface oxidation processes based on in-situ analysis
Project/Area Number |
19686037
|
Research Category |
Grant-in-Aid for Young Scientists (A)
|
Allocation Type | Single-year Grants |
Research Field |
Physical properties of metals
|
Research Institution | The University of Tokyo |
Principal Investigator |
KITA Koji The University of Tokyo, 大学院・工学系研究科, 准教授 (00343145)
|
Project Period (FY) |
2007 – 2009
|
Project Status |
Completed (Fiscal Year 2009)
|
Budget Amount *help |
¥26,260,000 (Direct Cost: ¥20,200,000、Indirect Cost: ¥6,060,000)
Fiscal Year 2009: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2008: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Fiscal Year 2007: ¥17,160,000 (Direct Cost: ¥13,200,000、Indirect Cost: ¥3,960,000)
|
Keywords | 半導体物性 / 初期酸化過程 / ゲルマニウム / 二酸化ゲルマニウム / 一酸化ゲルマニウム / 分光エリプソメトリー / 酸化機構 / 表面酸化 / 光吸収 / 酸素欠損 / 表面・界面物性 / 電子・電気材料 / 表面酸化渦程 / 絶縁膜 / 表面酸化過程 |
Research Abstract |
The GeO desorption from GeO_2 films on Ge is caused by the combination of two reactions occurring at the top and bottom interfaces, respectively, and the desorption rate is described by the diffusion-limited model through the GeO_2 film. It induces the oxygen-deficiency-related defects in the films, which is clearly detected as the increase of sub-gap photo absorption. The significant improvement of electrical characteristics was demonstrated through the suppression of defect generation by the introduction of a cap layer on top of GeO_2 film, or the control of oxygen partial pressure during the thermal treatment. The enhancement of the controllability of the interface properties by the coexisting high-k materials was also demonstrated.
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Report
(4 results)
Research Products
(82 results)