| Project/Area Number |
19740181
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Condensed matter physics I
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
KORETSUNE Takashi Tokyo Institute of Technology, 大学院・理工学研究科, 助教 (90391953)
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| Project Period (FY) |
2007 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
|
| Budget Amount *help |
¥2,830,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥330,000)
Fiscal Year 2009: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2008: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2007: ¥1,400,000 (Direct Cost: ¥1,400,000)
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| Keywords | カーボンナノチューブ / 不純物準位 / 第一原理計算 / 電子格子相互作用 / 超伝導 / フラーレン / グリーン関数理論 / ホウ素 / 窒素 / GW法 |
|---|
| Research Abstract |
Electronic structures of impurity-doped carbon nanotubes were studied systematically in order to discuss the application to semiconductor device and the possibility of superconductivity. We discussed impurity levels of boron- or nitrogen-doped nanotubes, the doping rate dependence of the electronic structures, and the effect of three-dimensionality in multi-walled nanotubes. Furthermore, to discuss the detailed physical properties, we developed the method using Green function theory based on the density functional theory.
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