Direct observation of electronic structure at the hetero-interface of trongly-correlated oxides studied by hard x-ray photoemission spectroscopy
| Project/Area Number |
19740199
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Condensed matter physics II
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| Research Institution | The University of Tokyo |
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Principal Investigator |
HORIBA Koji The University of Tokyo, 大学院・工学系研究科, 助教 (10415292)
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| Project Period (FY) |
2007 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥3,710,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥510,000)
Fiscal Year 2009: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2008: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2007: ¥1,500,000 (Direct Cost: ¥1,500,000)
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| Keywords | 強相関系 / 界面 |
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| Research Abstract |
In order to clarify the origin of unusual physical properties at hetero-interfaces of strongly-correlated oxides, we have performed the direct observation of electronic structure at the oxide hetero-interfaces using hard x-ray photoemission spectroscopy. We have succeeded in obtaining the depth-dependence of the electronic structure using hard x-ray photoemission spectroscopy, and clarified the electronic structures of several strongly-correlated oxide thin films and hetero-structures.
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Report
(4 results)
Research Products
(22 results)
