| Budget Amount *help |
¥3,860,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2009: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2008: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2007: ¥1,000,000 (Direct Cost: ¥1,000,000)
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| Research Abstract |
A method to evaluate structures and strains in the neXt generation silicon device using multiple X-ray diffraction was developed. By using this method it was revealed that strains are locally relaXed at the SiO_2/Si and Si_3N_4/Si interfaces, which were formed by Kr/O_2 and Xe/NH_3 plasmas, respectively. To apply this method to investigate local structures and strains in silicon devices, a multi-layer Laue lens-type X-ray focusing device was designed by using a simulator based on Takagi-Taupin type dynamical theory of X-ray diffraction. The focusing device was fabricated by using a deposition system. For visualization of three-dimensional strain distribution, another method based on X-ray phase imaging microscopy was also developed.
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