Damage mechanism of thin film at elevated temperature due to atomic migration and evolution of microstructure

• Project/Area Number: 19760060
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Materials/Mechanics of materials
• Research Institution: Yokohama National University
• Principal Investigator: SHIBUTANI Tadahiro Yokohama National University, 大学院工学研究院, 特別研究教員 (10332644)
• Project Period (FY): 2007 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥2,790,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥390,000); Fiscal Year 2008: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000); Fiscal Year 2007: ¥1,100,000 (Direct Cost: ¥1,100,000)
• Keywords: 原子輸送 / 金属薄膜 / 高温強度 / 微細組織 / クリープ / 錫ウィスカ / 微視組織変化 / 薄膜 / 高温破壊 / 応力 / 欠陥成長 / ウィスカ / めっき / 界面破壊 / 錫めっき

Research Abstract

本研究は、組織変化を伴う原子輸送による欠陥発生・成長メカニズムを解明し高温環境下での損傷評価手法を確立することを目的としている。局所的なクリープ変形によって形成される多軸応力勾配は、欠陥を急速に成長させる。薄膜-基板界面での微視構造変化を考慮した応力解析を行い、原子輸送による欠陥発生には2種類のモードがあることを明らかにするとともに微視組織変化を考慮した破壊モデルを提案した。また、欠陥発生は結晶サイズに大きく依存することを指摘し、その妥当性をナノインデンテーション法により確認した。

Research Products

• [Journal Article] 錫ウィスカ発生における局所成長した金属間化合物の影響 (2009)
  • Author(s): 澁谷忠弘、山下拓馬、于強、白鳥正樹
  • Journal Title: エレクトロニクス実装学会誌 12巻、1号 Pages: 53-61
  • NAID: 110007021782
  • Peer Reviewed
• [Journal Article] 錫ウィスカ発生における局所成長した金属間化合物の影響 (2009)
  • Author(s): 澁谷忠弘, 他3名
  • Journal Title: エレクトロニクス実装学会誌 12 Pages: 53-61
  • NAID: 110007021782
  • Peer Reviewed
• [Journal Article] Key reliability concerns with lead-free connectors (2008)
  • Author(s): Tadahiro Shibutani, Ji Wu, Qiang Yu and Michael Pect
  • Journal Title: Microelectronics Reliability Vol 48, No. 10 Pages: 1613-1627
  • Peer Reviewed
• [Journal Article] Pressure induced tin whisker formation (2008)
  • Author(s): Tadahiro Shibutani, Qiang Yu, Masaki Shiratori and Michael Pecht
  • Journal Title: Microelectronics Reliability Vol. 48, No. 6 Pages: 1033-1039
  • Peer Reviewed
• [Journal Article] Key Reliability Concern with Lead-free Electronics (2008)
  • Author(s): T. Shibutani, 他
  • Journal Title: Microelectronics Reliability 48 Pages: 1613-1617
  • Peer Reviewed
• [Journal Article] Pressure induced tin whisker formation (2007)
  • Author(s): T. Shibutani
  • Journal Title: Microelectronics Reliability (掲載予定)
  • Peer Reviewed
• [Journal Article] Tin Whiskers: How to Manage and Mitigate the Risks (2007)
  • Author(s): T. Shibutani
  • Journal Title: Proceedings of the International Symposium on High Density Packaging and Microsystem Integration Pages: 1-8
  • Peer Reviewed
• [Presentation] Pressure Induced Tin Whisker Formation on SnCu Finish by Nanoindentation Creep (2008)
  • Author(s): 澁谷忠弘
  • Organizer: 10th Electronics Packaging & Technology Conference
  • Place of Presentation: Singapore
  • Year and Date: 2008-12-12
• [Presentation] Pressure Induced Tin Whisker Formation on SnCu Finish by Nanoindentation Creep (2008)
  • Author(s): 澁谷忠弘
  • Organizer: 10^<th> Electronics Packaging & Technology Conference
  • Place of Presentation: Singapore
  • Year and Date: 2008-12-12
• [Presentation] Effect of Creep Properties on Pressure Induced Tin Whisker Formation (2008)
  • Author(s): 澁谷忠弘
  • Organizer: Second International Conference on Secure System Integration and Reliability Improvement
  • Place of Presentation: Yokohama
  • Year and Date: 2008-07-17
• [Presentation] Evaluation of pressure induced tin whisker formation (2007)
  • Author(s): 澁谷忠弘
  • Organizer: Successful Lead-Free/RoHS Strategies Conference 2007
  • Place of Presentation: Boxborough, MA, USA
  • Year and Date: 2007-06-21
• [Presentation] Evaluation of Resistance to Tin Whisker Formation Induced by Contact Force (2007)
  • Author(s): T. Shibutani
  • Organizer: International Symposium on Tin Whiskers
  • Place of Presentation: CALCE
  • Year and Date: 2007-04-24