| Project/Area Number |
19760080
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Materials/Mechanics of materials
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| Research Institution | Osaka Institute of Technology |
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Principal Investigator |
UETSUJI Yasutomo Osaka Institute of Technology, 工学部, 准教授 (00340604)
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| Project Period (FY) |
2007 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥3,750,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥450,000)
Fiscal Year 2009: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2008: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2007: ¥1,800,000 (Direct Cost: ¥1,800,000)
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| Keywords | 材料設計 / プロセス・物性・評価 / マルチスケール解析 / 第一原理計算 / 均質化法 / マルチスケール有限要素法 / 密度汎関数法 / 圧電材料 / 生体適合材料 / スパッタ薄膜 / エピタキシャル成長 |
|---|
| Research Abstract |
In order to find new implantable piezoelectric materials, perovskite-type oxides have been examined by employing first-principles calculation. Computations indicated that MgSiO_3 has superiority on the phase transition from cubic structure to tetragonal one. Additionally, tetragonal MgSiO_3 has a large spontaneous polarization and it can exhibit the largest piezoelectric response. Next, a computational scheme of first-principles aided triple-scale analysis based on a process crystallography was developed to design implantable piezoelectric thin films fabricated on substrate. The developed triple-scale analysis was applied to a new implantable piezoelectric MgSiO_3 thin film. As a result, the computation indicated that Cr(110) substrate is most suitable for stable crystal growth of MgSiO_3 orientated to [101] direction and it outputs the high piezoelectric stress constants.
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