Formation of three-dimensional quantum nanostructure networks based on compound semiconductor porous structuresq

• Project/Area Number: 19760208
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: Hokkaido University
• Principal Investigator: SATO Taketomo Hokkaido University, 量子集積エレクトロニクス研究センター, 准教授 (50343009)
• Project Period (FY): 2007 – 2008
• Project Status: Completed (Fiscal Year 2008)
• Budget Amount: ¥3,670,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥270,000); Fiscal Year 2008: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000); Fiscal Year 2007: ¥2,500,000 (Direct Cost: ¥2,500,000)
• Keywords: 電子・電気材料 / ナノ材料 / 自己組織化 / 表面・界面物性 / 量子閉じ込め / ポーラス構造 / 電気化学 / 高密度ナノ構造 / インジウムリン / 窒化ガリウム / 陽極酸化 / 陰極分解

Research Abstract

電解液と半導体界面の電気化学反応により形成される多孔質(ポーラス)構造を利用し、少ない電子を局所的に閉じ込めて制御する「3次元量子ナノネットワーク」の基礎技術を確立した。本構造は、直径数100nm 深さ数μm の直線的な孔が配列した高密度ナノ構造が基盤となっており、非常に大きな表面積と優れた伝導特性および光学的特性を有し、高感度化学センサや高効率太陽光発電素子の基本構造として有望性を示す一連の研究成果を得た。

Research Products

• [Journal Article] Photoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures (2008)
  • Author(s): T. Sato, A. Mizohata
  • Journal Title: Electrochemical and Solid-State Letters vol.11, no.5 Pages: 111-113
  • NAID: 120000952703
  • URL: http://eprints.lib.hokudai.ac.jp/dspace/handle/2115/33871
  • Peer Reviewed
• [Journal Article] Amperometric detection of hydrogen peroxide using InP porous nanostructures (2008)
  • Author(s): T. Sato, A. Mizohata, N. Yoshizawa, T. Hashizume
  • Journal Title: Applied Physics Express vol.1, no.5 Pages: 51202-51202
  • NAID: 10025080209
  • Peer Reviewed
• [Journal Article] Photoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures (2008)
  • Author(s): T. Sato, A. Mizohata
  • Journal Title: Electrochemical and Solid-State Letters 11
  • NAID: 120000952703
  • Peer Reviewed
• [Journal Article] Amperometric detection of hydrogen peroxide using InP porous nanostructures (2008)
  • Author(s): T. Sato, A. Mizohata, N. Yos hizawa, T. Hashizume
  • Journal Title: Applied Physics Express 1 Pages: 51202-51202
  • NAID: 10025080209
  • Peer Reviewed
• [Journal Article] Electrochemical formation of InP porous nano structures and its application to amperometric chemical sensors (2008)
  • Author(s): T. Sato, A. Mizohata, N. Yos hizawa, T. Hashizume
  • Journal Title: phys. stat. sol.(c) 5 Pages: 3475-3478
  • Peer Reviewed
• [Journal Article] Electrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions (2007)
  • Author(s): T. Sato, T. Fujino, T. Hashizume
  • Journal Title: Electrochemical and Solid-State Letters vol.10, no.5 Pages: 153-155
  • NAID: 120000968293
  • URL: http://eprints.lib.hokudai.ac.jp/dspace/handle/2115/20209
  • Peer Reviewed
• [Journal Article] Size-Controlled Porous Nanostructures Formed on InP(001) Substrates by Two-Step Electrochemical Process (2007)
  • Author(s): T. Fujino, T. Sato, T. Hashizume
  • Journal Title: Japanese Journal of Applied Physics Vol. 46, No. 7A Pages: 4375-4380
  • NAID: 40015465563
  • Peer Reviewed
• [Journal Article] Electrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions (2007)
  • Author(s): T. Sato, T. Fujino, T. Hashizume
  • Journal Title: Electrochemical and Solid-State Letters 10
  • NAID: 120000968293
  • Peer Reviewed
• [Journal Article] Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water (2007)
  • Author(s): N. Shiozaki, T. Sato, T. Hashizume
  • Journal Title: Japanese Journal of Applied Physics 46 Pages: 1471-1473
  • NAID: 10018900586
  • Peer Reviewed
• [Journal Article] Size-Controlled Porous Nanostructures Formed on InP (001) Substrates by Two-Step Electrochemical Process (2007)
  • Author(s): T. Fujino, T. Sato, T. Hashizume
  • Journal Title: Japanese Journal of Applied Physics 46 Pages: 4375-4380
  • NAID: 40015465563
  • Peer Reviewed
• [Presentation] Electrochemical formation and sensor application of InP porousna nostructures (2009)
  • Author(s): T. Sato, A. Mizohata, N. Yoshizawa and T. Hashizume
  • Organizer: 2009 RCIQE International Seminar on "Advan ced Semiconductor Materials and Devices"
  • Place of Presentation: 北海道大学札幌市
  • Year and Date: 2009-03-03
• [Presentation] pH Response Characteristics of Liquid-phase Chemical Sensors using InP Onen-aate FETs (2009)
  • Author(s): N. Yoshizawa, T. Sato, A. Mizohata and T. Hashizume
  • Organizer: 2009 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices"
  • Place of Presentation: 北海道大学札幌市
  • Year and Date: 2009-03-03
• [Presentation] pH Sensitivity of Liquid-phase Chemical Sensors using InP Open-eate FETs (2008)
  • Author(s): N. Yoshizawa, T. Sato, A. Mizohata and T. Hashizume
  • Organizer: International Symposium on Surface Science and Nanotechnology(ISSS5)
  • Place of Presentation: 早稲田大学東京都
  • Year and Date: 2008-11-10
• [Presentation] Liquid-phase Chemical Sensors using InP-based Open-gate FETs (2008)
  • Author(s): N. Yoshizawa, T. Sato, A. Mizohata and T. Hashizume
  • Organizer: THE SEVENTH IEEE CONFERENCE ON S ENSORS(IEEE SENSORS 2008)
  • Place of Presentation: Grand Hotel Tizianoレッチェ、イタリア
  • Year and Date: 2008-10-28
• [Presentation] Complete Removal of Irregular Top Layer forSensor Applications of InP Porous Nanostructures (2008)
  • Author(s): T. Sato, A. Mizohata, N. Yoshizawa and T. Hashizume
  • Organizer: 214th Meeting of the Electrochemical Society
  • Place of Presentation: Hilton Hotelホノルル、米国
  • Year and Date: 2008-10-14
• [Presentation] InPイオン感応性電界効果トランジスタのpH応答特性 (2008)
  • Author(s): 吉澤直樹、溝畑彰規、佐藤威友、橋詰保
  • Organizer: 平成20年秋期応用物理学会学術講演会
  • Place of Presentation: 中部大学愛知県春日井市
  • Year and Date: 2008-09-02
• [Presentation] InPポーラス構造を基盤とする電流検出型化学センサの作製 (2008)
  • Author(s): 溝畑彰規、吉澤直樹、佐藤威友、橋詰保
  • Organizer: 平成20年秋期応用物理学会学術講演会
  • Place of Presentation: 中部大学愛知県春日井市
  • Year and Date: 2008-09-02
• [Presentation] 電気化学プロセスによるInPポーラス構造の形成と縦および横方向へのエッチング制御 (2008)
  • Author(s): 佐藤威友、溝畑彰規、吉澤直樹、橋詰保
  • Organizer: 平成20年秋期応用物理学会学術講演会
  • Place of Presentation: 中部大学愛知県春日井市
  • Year and Date: 2008-09-02
• [Presentation] グリコール水溶液を用いた陽極酸化によるGaN表面の電気的・光学的安定化 (2008)
  • Author(s): 塩崎奈々子、佐藤威友、橋詰保
  • Organizer: 平成20年秋期応用物理学会学術講演会
  • Place of Presentation: 中部大学愛知県春日井市
  • Year and Date: 2008-09-02
• [Presentation] Electrochemical formation and functionalization of InP porous nano structures and their application to chemical sensors (2008)
  • Author(s): A. Mizohata, N. Yoshizawa, T.Sato and T. Hashizume
  • Organizer: 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: かでる2・7会議場札幌市
  • Year and Date: 2008-07-11
• [Presentation] Electrochemical formation and sensor application of highly-ordered InP nanostructures (2008)
  • Author(s): T. Sato, A. Mizohata, N. Yoshizawa T. Hashizume
  • Organizer: 2008 RCIQE International seminar on "Advanced Semiconductor Materials and Devices"
  • Place of Presentation: 札幌市
  • Year and Date: 2008-03-03
• [Presentation] 電気化学的手法によるInP表面の機能性修飾と化学センサへの応用 (2008)
  • Author(s): 溝畑彰規、佐藤威友、橋詰保
  • Organizer: 第43回応用物理学会北海道支部学術講演会
  • Place of Presentation: 札幌市
  • Year and Date: 2008-01-10
• [Presentation] pH Sensitivity of Liquid-phase Chemical Sensors using InP Open-gate FETs (2008)
  • Author(s): N. Yoshizawa, T. Sato, A. Mizohata and T. Hashizume
  • Organizer: International Symposium on Surface Science and Nanotechnology (ISSS5)
  • Place of Presentation: Tokyo, Japan
• [Presentation] Liquid-phase Chemical Sensors using InP-based Open-gate FETs (2008)
  • Author(s): N. Yoshizawa, T. Sato, A. Mizohata and T. Hashizume
  • Organizer: THE SEVENTH IEEE CONFERENCE ON SENSORS (IEEE SENSORS 2008)
  • Place of Presentation: Lecce, Italy
• [Presentation] Complete Removal of Irregular Top Layer forSensor Applications of InP Porous Nanostructures (2008)
  • Author(s): T. Sato, A. Mizohata, N. Yoshizawa and T. Hashizume
  • Organizer: 214th Meeting of the Electrochemical Society
  • Place of Presentation: Honolulu, Hawaii
• [Presentation] Electrochemical formation and functionalization of InP porous nanostructures and their application to chemical sensors (2008)
  • Author(s): A. Mizohata, N. Yoshizawa, T.Sato and T. Hashizume
  • Organizer: 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
  • Place of Presentation: Sapporo, Japan
• [Presentation] Electrochemical formation of InP porous nanostructures and its application to amperometric chemical sensors (2007)
  • Author(s): T. Sato, T. Fujino, A. Mizohata, T. Hashizume
  • Organizer: 2007 European Materials Research Society (E-MRS) Fall Meeting : Symposium B
  • Place of Presentation: ワルシャワ,ポーランド
  • Year and Date: 2007-09-20
• [Presentation] 電気化学的手法によるInPポーラスナノ構造の形成と化学センサへの応用 (2007)
  • Author(s): 佐藤威友、溝畑彰規、橋詰保
  • Organizer: 第68回応用物理学会学術講演会(2007年秋期)
  • Place of Presentation: 札幌市
  • Year and Date: 2007-09-04
• [Presentation] Electrochemical formation and sensor application of InP porous nanostructures (2007)
  • Author(s): T. Sato, T. Fujino, T. Hashizume
  • Organizer: 2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: 慶州,韓国
  • Year and Date: 2007-06-27
• [Presentation] Electrochemical formation of InP porous nanostructures and its application to amperometric chemical sensors (2007)
  • Author(s): T.Sato, T. Fujino, A. Mizohata, T. Hashizume
  • Organizer: European Materials Research Society Fall Meeting
  • Place of Presentation: Warsaw, Poland
• [Presentation] Electrochemical formation and sensor application of InP porous nanostructures (2007)
  • Author(s): T.Sato, T. Fujino, T. Hashizume
  • Organizer: 2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
  • Place of Presentation: Kyongju, Korea
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