Identification of defects degrading SiC device performance by the excess carrier lifetime mapping with micrometer resolution
| Project/Area Number |
19760215
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
KATO Masashi Nagoya Institute of Technology, 大学院・工学研究科, 准教授 (80362317)
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| Project Period (FY) |
2007 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥3,830,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥330,000)
Fiscal Year 2009: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2008: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2007: ¥2,400,000 (Direct Cost: ¥2,400,000)
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| Keywords | 作成 / 評価技術 / SiC / 過剰キャリアライフタイム / 評価 / 欠陥 / Sic |
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| Research Abstract |
We have developed an excess carrier lifetime mapping system with micrometer resolution for identification of defects degrading device performance in silicon carbide. As a result, although we have obtained excess carrier lifetime maps for silicon samples, further improvement of the system has been required to obtain excess carrier lifetime maps for silicon carbide. On the other hand, by characterizing excess carrier lifetime in p-type silicon carbide with various defects concentration, we have found that carbon-related defects have impact on the excess carrier lifetime in p-type silicon carbide.
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Report
(4 results)
Research Products
(16 results)
