| Budget Amount *help |
¥3,830,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥630,000)
Fiscal Year 2009: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2008: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2007: ¥1,100,000 (Direct Cost: ¥1,100,000)
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| Research Abstract |
InSb has attracted much interest for application of ultra-fast and low power devices. To realize the InSb-based FET, we grew the InSb and AlInSb films using new growth method called "Surface Reconstruction assisted growth", and evaluated them. The fully rotated InSb and AlInSb films were successfully grown using Si(111)-√<7>×√<3>-In surface reconstruction. However, due to its high hall concentration and low resistivity, trial FET didn't work as a transistor.
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