Fabrication of InSb quantum well on Si using surface reconstruction Assisted growth method and its application for ultra-fast FET
| Project/Area Number |
19760233
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | University of Toyama |
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Principal Investigator |
MORI Masayuki University of Toyama (90303213)
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| Project Period (FY) |
2007 – 2009
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| Project Status |
Completed (Fiscal Year 2009)
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| Budget Amount *help |
¥3,830,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥630,000)
Fiscal Year 2009: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2008: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2007: ¥1,100,000 (Direct Cost: ¥1,100,000)
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| Keywords | 電子デバイス・集積回路 / ヘテロエピタキシャル成長 / 表面再構成制御成長法 / InSb / ヘテロエピタキシャル / Si / リソグラフィー / ラインアンドスペース / 量子井戸 / AIInSb / KOH |
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| Research Abstract |
InSb has attracted much interest for application of ultra-fast and low power devices. To realize the InSb-based FET, we grew the InSb and AlInSb films using new growth method called "Surface Reconstruction assisted growth", and evaluated them. The fully rotated InSb and AlInSb films were successfully grown using Si(111)-√<7>×√<3>-In surface reconstruction. However, due to its high hall concentration and low resistivity, trial FET didn't work as a transistor.
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Report
(4 results)
Research Products
(71 results)
