収束ビームによる高濃度イオン注入プロセスを利用した新構造ダイヤモンドFETの作製

• Project/Area Number: 19760237
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Electron device/Electronic equipment
• Research Institution: Waseda University
• Principal Investigator: 平間 一行 早稲田大, 理工学術院, 助手 (50434329)
• Project Period (FY): 2007
• Project Status: Completed (Fiscal Year 2007)
• Budget Amount: ¥1,900,000 (Direct Cost: ¥1,900,000); Fiscal Year 2007: ¥1,900,000 (Direct Cost: ¥1,900,000)