Development of Properties and Functionalities by Precise Control of Rare-Earth Doping

• Project/Area Number: 19GS1209
• Research Category: Grant-in-Aid for Creative Scientific Research
• Allocation Type: Single-year Grants
• Research Institution: Osaka University
• Principal Investigator: FUJIWARA Yasufumi 大阪大学, 大学院・工学研究科, 教授 (10181421)
• Co-Investigator(Kenkyū-buntansha): TERAI Yoshikazu 大阪大学, 大学院・工学研究科, 講師 (90360049) ; NISHIKAWA Atsushi 大阪大学, 大学院・工学研究科, 助教 (60417095) ; ICHIDA Hideki 大阪大学, 先端科学イノベーションセンター, 助教 (50379129) ; ASAHI Hajime 大阪大学, 産業科学研究所, 教授 (90192947) ; HASEGAWA Shigehiko 大阪大学, 産業科学研究所, 准教授 (50189528) ; EMURA Shuichi 大阪大学, 産業科学研究所, 助教 (90127192) ; ZHOU Ikai 大阪大学, 産業科学研究所, 助教 (60346179) ; OHTA Hitoshi 神戸大学, 自然科学研究系先端融合研究環分子フォトサイエンス研究センター, 教授 (70194173) ; OHKUBO Susumu 神戸大学, 自然科学研究系先端融合研究環分子フォトサイエンス研究センター, 助教 (80283901)
• Project Period (FY): 2007 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥526,500,000 (Direct Cost: ¥405,000,000、Indirect Cost: ¥121,500,000); Fiscal Year 2011: ¥67,080,000 (Direct Cost: ¥51,600,000、Indirect Cost: ¥15,480,000); Fiscal Year 2010: ¥116,090,000 (Direct Cost: ¥89,300,000、Indirect Cost: ¥26,790,000); Fiscal Year 2009: ¥116,220,000 (Direct Cost: ¥89,400,000、Indirect Cost: ¥26,820,000); Fiscal Year 2008: ¥111,020,000 (Direct Cost: ¥85,400,000、Indirect Cost: ¥25,620,000); Fiscal Year 2007: ¥116,090,000 (Direct Cost: ¥89,300,000、Indirect Cost: ¥26,790,000)
• Keywords: 希土類元素 / オプトロニクス / スピントロニクス / スピンエレクトロニクス / 半導体物性 / 先端機能デバイス

Research Abstract

We have doped rare-earth(RE) elements to III-V semiconductors using atomically-controlled crystal-growth techniques and investigated luminescent and magnetic properties due to RE ions. Ultrafast energy transfer from the host to RE ions was revealed in the materials. The first demonstration of red emission was succeeded in a nitride-based light-emitting diode with Eu-doped GaN. The room-temperature ferromagnetism was proved to be induced by carriers. The feasibility to develop new opto-magnetic devices was also confirmed.

Research Products

• [Journal Article] Eu luminescence center created by Mg codoping in Eu-doped GaN (2012)
  • Author(s): D. Lee, A. Nishikawa, Y. Terai, and Y. Fujiwara
  • Journal Title: Applied Physics Letters Volume: 100 Issue: 17
  • DOI: 10.1063/1.4704920
  • Peer Reviewed
• [Journal Article] Photoluminescence properties of Sm-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition (2012)
  • Author(s): T.Tsuji
  • Journal Title: Journal of Non-Crystalline Solids Volume: (印刷中)
  • Peer Reviewed
• [Journal Article] Concentration quenching in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition (2012)
  • Author(s): T.Tsuji
  • Journal Title: Journal of Luminescence Volume: (印刷中)
  • Peer Reviewed
• [Journal Article] Effect of growth conditions on magnetic and structural properties in Gd-doped GaN layers grown by plasma-assisted molecular beam epitaxy (2012)
  • Author(s): H.Hasegawa
  • Journal Title: Physica Status Solidi C Volume: 9 Issue: 3-4 Pages: 741-744
  • DOI: 10.1002/pssc.201100403
  • Peer Reviewed
• [Journal Article] Structural, magnetic and optical studies of ultrathin GaGdN/AlGaN multiquantum well structure (2012)
  • Author(s): M.Almokhtar
  • Journal Title: Physica Status Solidi C Volume: 9 Issue: 3-4 Pages: 737-740
  • DOI: 10.1002/pssc.201100469
  • Peer Reviewed
• [Journal Article] Rare-earth doped III-nitride semiconductors for semiconductor spintronics (2012)
  • Author(s): H.Asahi
  • Journal Title: Journal of Luminescence Volume: (印刷中)
  • Peer Reviewed
• [Journal Article] Observation of large Zeeman splitting in GaGdN/AlGaN ferromagnetic semiconductor double quantum well superlattices (2012)
  • Author(s): Y.K.Zhou
  • Journal Title: Solid State Communications Volume: (印刷中)
  • Peer Reviewed
• [Journal Article] Optical and magnetic properties in epitaxial GdN thin film (2011)
  • Author(s): H. Yoshitomi, S. Kitayama, T. Kita, O. Wada, M. Fujisawa, H. Ohta, and T. Sakurai
  • Journal Title: Physical Reviews B Volume: 83 Issue: 15
  • DOI: 10.1103/physrevb.83.155202
  • NAID: 120003037342
  • Peer Reviewed
• [Journal Article] ESR study of photoluminescent material GaAs : Er, O-Er concentration effect- (2011)
  • Author(s): M. Fujisawa, A. Asakura, F. Elmasry, S. Okubo, H. Ohta, and Y. Fujiwara
  • Journal Title: Journal of Applied Physics Volume: 109 Issue: 5 Pages: 053910-053910
  • DOI: 10.1063/1.3556453
  • Peer Reviewed
• [Journal Article] Energy structure of Er-2O center in GaAs : Er, O studied by high magnetic field photoluminescence measurement (2011)
  • Author(s): H. Katsuno, H. Ohta, O. Portugall, N. S. Ubrig, M. Fujisawa, F. Elmasry, S. Okubo, and Y. Fujiwara
  • Journal Title: Journal of Luminescence Volume: 131 Pages: 2294-2298
  • Peer Reviewed
• [Journal Article] Excitation of Eu3+ in gallium nitride epitaxial layers : Majority versus trap defect center (2011)
  • Author(s): N. Woodward, J. Poplawsky, B. Mitchell, A. Nishikawa, Y. Fujiwara, and V. Dierolf
  • Journal Title: Applied Physics Letters Volume: 98
  • Peer Reviewed
• [Journal Article] Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy (2011)
  • Author(s): N.Furukawa
  • Journal Title: Physica Status Solidi A Volume: 208 Issue: 2 Pages: 445-448
  • DOI: 10.1002/pssa.201000598
  • Peer Reviewed
• [Journal Article] Photoluminescence properties of Eu^<3+> ions in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition (2011)
  • Author(s): Y.Terai
  • Journal Title: Physica Status Solidi C Volume: 8 Issue: 2 Pages: 519-521
  • DOI: 10.1002/pssc.201000468
  • Peer Reviewed
• [Journal Article] Fluorescence EXAFS analysis of Eu-doped GaN layers grown by organometallic vapor phase epitaxy (2011)
  • Author(s): H.Ofuchi
  • Journal Title: e-Journal of Surface Science and Nanotechnology Volume: 9 Pages: 51-53
  • Peer Reviewed
• [Journal Article] Excitation of Eu^<3+> in gallium nitride epitaxial layers : Majority versustrap defect center (2011)
  • Author(s): N.Woodward
  • Journal Title: Applied Physics Letter Volume: 98 Issue: 1 Pages: 011102-011102
  • DOI: 10.1063/1.3533806
  • Peer Reviewed
• [Journal Article] Site and sample dependent electron-phonon coupling of Eu ions in epitaxial-grown GaN layers (2011)
  • Author(s): N.Woodward
  • Journal Title: Optical Materials Volume: 33 Issue: 7 Pages: 1050-1054
  • DOI: 10.1016/j.optmat.2010.09.029
  • Peer Reviewed
• [Journal Article] Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapour phase epitaxy (2011)
  • Author(s): A.Nishikawa
  • Journal Title: Optical Materials Volume: 33 Issue: 7 Pages: 1071-1074
  • DOI: 10.1016/j.optmat.2010.10.010
  • Peer Reviewed
• [Journal Article] OMVPE法により作製したEu添加GaNの発光特性及び赤色発光ダイオードへの応用 (2011)
  • Author(s): 西川敦
  • Journal Title: 日本結晶成長学会誌 Volume: 38 Pages: 270-273
  • Peer Reviewed
• [Journal Article] 希土類添加半導体の新展開 (2011)
  • Author(s): 藤原康文
  • Journal Title: マテリアルインテグレーション Volume: 24 Pages: 18-22
  • NAID: 130006977578
  • Peer Reviewed
• [Journal Article] Low-temperature molecular beam epitaxy growth and properties of GaGdN nanorods (2011)
  • Author(s): H.Tambo
  • Journal Title: Journal of Crystal Growth Volume: 323 Issue: 1 Pages: 323-325
  • DOI: 10.1016/j.jcrysgro.2010.10.003
  • Peer Reviewed
• [Journal Article] Structural characterization of MBE grown InGaGdN/GaN and InGaN/GaGdN superlattice structures (2011)
  • Author(s): D.Krishnamurthy
  • Journal Title: Physica Status Solidi C Volume: 8 Issue: 7-8 Pages: 2245-2247
  • DOI: 10.1002/pssc.201001024
  • Peer Reviewed
• [Journal Article] Growth of Gd-doped InGaN/GaN multiple quantum wells and their characterization (2011)
  • Author(s): S.Hasegawa
  • Journal Title: Physica Status Solidi C Volume: 8 Issue: 7-8 Pages: 2047-2049
  • DOI: 10.1002/pssc.201001022
  • Peer Reviewed
• [Journal Article] Large magneto-optical effect in low-temperature-grown GaDyN (2011)
  • Author(s): Y.K.Zhou
  • Journal Title: Physica Status Solidi C Volume: 8 Issue: 7-8 Pages: 2173-2175
  • DOI: 10.1002/pssc.201001021
  • Peer Reviewed
• [Journal Article] GaGdN/AlGaN multiple quantum disks grown by RF-plasma-assisted molecular-beam epitaxy (2011)
  • Author(s): H.Tambo
  • Journal Title: Physica Status Solidi A Volume: 208 Issue: 7 Pages: 1576-1578
  • DOI: 10.1002/pssa.201000928
  • Peer Reviewed
• [Journal Article] Photoluminescence from exciton-polarons in GaGdN/AlGaN multiquantum wells (2011)
  • Author(s): M.Almokhtar
  • Journal Title: Journal of Physics : Condensed Matters Volume: 23 Issue: 32 Pages: 325802-325802
  • DOI: 10.1088/0953-8984/23/32/325802
  • Peer Reviewed
• [Journal Article] Energy structure of Er-2O center in GaAs:Er,O studied by high magnetic field photoluminescence measurement (2011)
  • Author(s): H.Katsuno
  • Journal Title: Journal of Luminescence Volume: 131 Issue: 11 Pages: 2294-2298
  • DOI: 10.1016/j.jlumin.2011.05.034
  • Peer Reviewed
• [Journal Article] Ferromagnetic state of GdN thin film studied by ferromagnetic resonance (2011)
  • Author(s): H.Ohta
  • Journal Title: AIP Conference Proceedings Volume: 1399 Pages: 679-680
  • Peer Reviewed
• [Journal Article] High-field ESR using SQUID magnetometer (2011)
  • Author(s): T.Sakurai
  • Journal Title: Journal of Physics : Conference Series Volume: 334 Pages: 012058-012058
  • DOI: 10.1088/1742-6596/334/1/012058
  • Peer Reviewed
• [Journal Article] First-order-like antiferromagnetic transition in rare-earth palladium bronze SmPd_2S_4 (2011)
  • Author(s): E.Matsuoka
  • Journal Title: Journal of Physics : Conference Series Volume: 273 Pages: 012138-012138
  • DOI: 10.1088/1742-6596/273/1/012138
  • Peer Reviewed
• [Journal Article] Lattice site location of optical centres in GaN : Eu LED material grown by organometallic vapor phase epitaxy (2010)
  • Author(s): K. Lorenz, E. Alves, I. S. Roqan, K. P. O' Donnell, A. Nishikawa, Y. Fujiwara, and M. Bockowski
  • Journal Title: Applied Physics Letters Volume: 97 Issue: 11
  • DOI: 10.1063/1.3489103
  • Peer Reviewed
• [Journal Article] Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy (2010)
  • Author(s): A. Nishikawa, N. Furukawa, T. Kawasaki, Y. Terai, and Y. Fujiwara
  • Journal Title: Applied Physics Letters Volume: 97 Issue: 5
  • DOI: 10.1063/1.3478011
  • Peer Reviewed
• [Journal Article] 希土類添加半導体の現状と将来展望 (2010)
  • Author(s): 藤原康文、西川敦、寺井慶和
  • Journal Title: 応用物理 Volume: 79 Pages: 25-31
  • NAID: 10026198784
  • Peer Reviewed
• [Journal Article] Improved Eu luminescence properties in Eu-doped GaN grown on GaN substrates by organometallic vapour phase epitaxy (2010)
  • Author(s): H.Kasai
  • Journal Title: Japanese Journal of Applied Physics Volume: 49
  • Peer Reviewed
• [Journal Article] Rare-earth-doped semiconductor-based light-emitting diodes operating at room temperature (2010)
  • Author(s): Y.Fujiwara
  • Journal Title: e-Journal of Light Emitting Diode Volume: 2
  • Peer Reviewed
• [Journal Article] Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE (2010)
  • Author(s): A.Nishikawa
  • Journal Title: Physica Status Solidi A Volume: 207 Pages: 1397-1399
  • Peer Reviewed
• [Journal Article] Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy (2010)
  • Author(s): T.Kawasaki
  • Journal Title: Physica Status Solidi C Volume: 7 Pages: 2040-2042
  • Peer Reviewed
• [Journal Article] Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy (2010)
  • Author(s): A.Nishikawa
  • Journal Title: Applied Physics Letters Volume: 97
  • Peer Reviewed
• [Journal Article] Lattice site location of optical centres in GaN : Eu LED material grown by organometallic vapor phase epitaxy (2010)
  • Author(s): K.Lorenz
  • Journal Title: Applied Physics Letters Volume: 97
  • Peer Reviewed
• [Journal Article] Growth temperature dependence of Eu-doped GaN grown by organometallic vapor phase epitaxy (2010)
  • Author(s): A.Nishikawa
  • Journal Title: Journal of The Society of Materials Science Japan Volume: 59 Pages: 671-674
  • NAID: 130000335797
  • Peer Reviewed
• [Journal Article] Photoluminescence properties of Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition (2010)
  • Author(s): Y.Terai
  • Journal Title: Journal of The Society of Materials Science Japan Volume: 59 Pages: 690-693
  • NAID: 130000335801
  • Peer Reviewed
• [Journal Article] Photoluminescence properties of Er-doped β-FeSi_2 grown by ion beam synthesis methods (2010)
  • Author(s): Y.Terai
  • Journal Title: Physica E Volume: 42 Pages: 2846-2848
  • Peer Reviewed
• [Journal Article] Photoluminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition (2010)
  • Author(s): Y.Terai
  • Journal Title: Physica E Volume: 42 Pages: 2834-2836
  • Peer Reviewed
• [Journal Article] GaNを利用した赤色発光ダイオード (2010)
  • Author(s): 西川敦
  • Journal Title: 光アライアンス Volume: 21 Pages: 7-9
  • Peer Reviewed
• [Journal Article] Eu添加GaN赤色発光ダイオードの有機金属気相エピタキシャル成長と発光特性 (2010)
  • Author(s): 藤原康文
  • Journal Title: 生産と技術 Volume: 62 Pages: 1-4
  • NAID: 40017345424
  • Peer Reviewed
• [Journal Article] Annealing effect in GaDyN on optical and magnetic properties (2010)
  • Author(s): Y.K Zhou
  • Journal Title: Journal of Superconductivity and Novel Magnetism Volume: 23 Pages: 103-105
  • Peer Reviewed
• [Journal Article] Structural and magnetic properties of GaGdN/GaN superlattice structures (2010)
  • Author(s): Y.K Zhou
  • Journal Title: Thin Solid Films Volume: 518 Pages: 5659-5661
  • Peer Reviewed
• [Journal Article] Characterization of InGaGdN layers prepared by molecular beam epitaxy (2010)
  • Author(s): S.N.M.Tawil
  • Journal Title: Phys.Stat.Sol.Rap.Res.Lett. Volume: 4 Pages: 308-310
  • Peer Reviewed
• [Journal Article] Magnetic properties of GaGdN studied by SQUID and SX-MCD (2010)
  • Author(s): M.Takahashi
  • Journal Title: Journal of Superconductivity and Novel Magnetism Volume: 23 Pages: 107-109
  • Peer Reviewed
• [Journal Article] Influence of Si-doping on the characteristics of InGaGdN/GaN MQWs grown by MBE (2010)
  • Author(s): S.N.M.Tawil
  • Journal Title: Physica Status Solidi C Volume: 8 Pages: 491-493
  • Peer Reviewed
• [Journal Article] Investigations on the properties of intermittently Gd-doped InGaN structures grown by molecular-beam epitaxy (2010)
  • Author(s): D.Krishnamurthy
  • Journal Title: Physica Status Solidi C Volume: 8 Pages: 497-499
  • Peer Reviewed
• [Journal Article] Structural and magnetic properties of diluted magnetic semiconductor GaGdN nanorods (2010)
  • Author(s): H.Tambo
  • Journal Title: Physica Status Solidi C Volume: 8 Pages: 494-496
  • Peer Reviewed
• [Journal Article] Photoluminescence measurement of Er,O-codoped GaAs under a pulsed magnetic field up to 60 T (2010)
  • Author(s): H.Ohta
  • Journal Title: Journal of Low Temperature Physics Volume: 159 Pages: 203-207
  • Peer Reviewed
• [Journal Article] Magnetic properties of magnetic semiconductor GaAs : Er,O studied by ESR (2010)
  • Author(s): M.Fujisawa
  • Journal Title: Journal of Physics : Conference Series Volume: 200
  • Peer Reviewed
• [Journal Article] 希土類添加半導体の現状と将来展望 (2010)
  • Author(s): 藤原康文, 西川敦, 寺井慶和
  • Journal Title: 応用物理 79 Pages: 25-31
  • NAID: 10026198784
  • Peer Reviewed
• [Journal Article] 希土類添加半導体の現状と将来展望 (2010)
  • Author(s): 藤原康文
  • Journal Title: 応用物理 79 Pages: 25-31
  • NAID: 10026198784
  • Peer Reviewed
• [Journal Article] Improved Eu luminescence properties in Eu-doped GaN grown on GaN substrates by organometallic vapour phase epitaxy (2010)
  • Author(s): H.Kasai
  • Journal Title: Japanese Journal of Applied Physics 49
  • Peer Reviewed
• [Journal Article] Low-voltage operation of current-injection red emission from p-GaN/Eu-doped GaN/n-GaN light-emitting diodes (2010)
  • Author(s): 西川敦
  • Journal Title: Physica Status Solidi(a) (印刷中)
  • Peer Reviewed
• [Journal Article] Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy (2010)
  • Author(s): T.Kawasaki
  • Journal Title: Physica Status Solidi(c) (印刷中)
  • Peer Reviewed
• [Journal Article] Photoluminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition (2010)
  • Author(s): 寺井慶和
  • Journal Title: Physica E (印刷中)
  • Peer Reviewed
• [Journal Article] 有機金属気相エピタキシャル法によるユウロピウム添加窒化ガリウムの成長温度依存性 (2010)
  • Author(s): 西川敦
  • Journal Title: 材料 (印刷中)
  • NAID: 130000335797
  • Peer Reviewed
• [Journal Article] スパッタリング併用有機金属気相エピタキシャル法によるEu添加ZnOの作製とその発光特性 (2010)
  • Author(s): 寺井慶和
  • Journal Title: 材料 (印刷中)
  • NAID: 130000335801
  • Peer Reviewed
• [Journal Article] Annealing effect in GaDyN on optical and magnetic properties (2010)
  • Author(s): Y.K.Zhou
  • Journal Title: Journal of Superconductivity and Novel Magnetism 23 Pages: 103-105
  • Peer Reviewed
• [Journal Article] Local-orbital ordering on Cr^<3+> ions doped in GaN (2010)
  • Author(s): S.Emura
  • Journal Title: AIP Conference Proceedings Series 1199 Pages: 417-418
  • Peer Reviewed
• [Journal Article] Structural and magnetic properties of GaGdN/GaN superlattice structures (2010)
  • Author(s): Y.K.Zhou
  • Journal Title: Thin Solid Films (印刷中)
  • Peer Reviewed
• [Journal Article] Magnetic properties of GaGdN studied by SQUID and SX-MCD (2010)
  • Author(s): M.Takahashi
  • Journal Title: Journal of Superconductivity and Novel Magnetism (印刷中)
  • Peer Reviewed
• [Journal Article] Spin dynamics of S=1/2 kagome lattice antiferromagnets observed by high -field ESR (2010)
  • Author(s): H.Ohta
  • Journal Title: Physica Status Solidi B 247 Pages: 679-681
  • Peer Reviewed
• [Journal Article] Photoluminescence Measurement of Er,O-Codoped GaAs Under a Pulsed Magnetic Field up to 60 T (2010)
  • Author(s): H.Ohta
  • Journal Title: Journal of Low Temperature Physics 159 Pages: 203-207
  • Peer Reviewed
• [Journal Article] Development of Multi-extreme ESR Measurement System in Kobe (2010)
  • Author(s): H.Ohta
  • Journal Title: Journal of Low Temperature Physics 159 Pages: 302-306
  • Peer Reviewed
• [Journal Article] Room-temperature red emission from a p-type/ europium-doped/ n-type gallium nitride light-emitting diode under current injection (2009)
  • Author(s): A. Nishikawa, T. Kawasaki, N. Furukawa, Y. Terai, and Y. Fujiwara
  • Journal Title: Applied Physics Express Volume: 2 Pages: 071004-071004
  • DOI: 10.1143/apex.2.071004
  • NAID: 10025087007
  • Peer Reviewed
• [Journal Article] Room-temperature red emission from a p-type/europium-doped/n-type gallium nitride light-emitting diode under current injection (2009)
  • Author(s): A. Nishikawa, T. Kawasaki, N. Furukawa, Y. Terai, Y. Fujiwara
  • Journal Title: Appl.Phys.Exp. 2
  • NAID: 10025087007
  • Peer Reviewed
• [Journal Article] Luminescence properties in Er,O-codoped GaAs light-emitting devices with double excitation mechanism (2009)
  • Author(s): 藤原康文
  • Journal Title: Materials Research Society Symposium Proceedings, Rare-Earth Doping ofAdvanced Materials for Photonic Applications 1111 Pages: 143-148
  • Peer Reviewed
• [Journal Article] Development of new-type 1.5μm light-emitting devices based on Er, O-codoped GaAs (2009)
  • Author(s): 藤原康文
  • Journal Title: Journal of Physics : Conference Series 165
  • Peer Reviewed
• [Journal Article] Electroluminescence properties of GaInP/GaAs : Er,O/GaInP double heterostructure light-emitting diodes at low temperature (2009)
  • Author(s): 寺井慶和
  • Journal Title: Optical Materials 31 Pages: 1323-1326
  • Peer Reviewed
• [Journal Article] Room-temperature red emission from p-type/europium-doped/n-type gallium nitride light-emitting diodes under current injection (2009)
  • Author(s): 西川敦
  • Journal Title: Applied Physics Express 2
  • NAID: 10025087007
  • Peer Reviewed
• [Journal Article] Structural and luminescent properties of Er-doped ZnO films grown by metalorganic chemical vapor deposition (2009)
  • Author(s): 寺井慶和
  • Journal Title: Journal of Vacuum Science and Technology 27 Pages: 2248-2251
  • Peer Reviewed
• [Journal Article] Optical properties of GaInP/GaAs : Er,O/GaInP laser diodes grown on p-type GaAs substrates by organometallic vapor phase epitaxy (2009)
  • Author(s): Y Ota
  • Journal Title: IOP Conference Series : Materials Science and Engineering 1
  • Peer Reviewed
• [Journal Article] Luminescence Properties of Eu-implanted GaN-based Semiconductors (2009)
  • Author(s): H.Kasai
  • Journal Title: Journal of Physics : Conference Series 165
  • Peer Reviewed
• [Journal Article] Metalorganic chemical vapor deposition of Er-doped ZnO thin films with 1.54μm photoluminescence (2009)
  • Author(s): K.Yamaoka
  • Journal Title: Journal of Physics : Conference Series 165
  • Peer Reviewed
• [Journal Article] Optical properties of Eu-implanted GaN and related-alloy semiconductors (2009)
  • Author(s): 西川敦
  • Journal Title: Journal of Physics : Conference Series 191
  • Peer Reviewed
• [Journal Article] Formation of aligned CrN nanoclusters in Cr-delta-doped GaN (2009)
  • Author(s): Y.K.Zhou
  • Journal Title: Journal of Physics : Condensed Matters 21
  • Peer Reviewed
• [Journal Article] Structural properties of AlCrN, GaCrN and InCrN (2009)
  • Author(s): S.Kimura
  • Journal Title: Journal of Crystal Growth 311 Pages: 2046-2048
  • Peer Reviewed
• [Journal Article] Crystal growth and characterization of GaCrN nanorods on Si substrate (2009)
  • Author(s): H.Tambo
  • Journal Title: Journal of Crystal Growth 311 Pages: 2962-2965
  • Peer Reviewed
• [Journal Article] Growth and characterization of Fe nanostructures on GaN (2009)
  • Author(s): Y.Honda
  • Journal Title: Applied Surface Science 256 Pages: 1069-1072
  • Peer Reviewed
• [Journal Article] Broken symmetry of cage surrounding magnetic dopant Cr ion in cubic GaN (2009)
  • Author(s): S.Emura
  • Journal Title: Journal of Physics : Conference Series 190
  • Peer Reviewed
• [Journal Article] Impurity effect of an S=1/2 two leg spin ladder antiferromagnet[Ph(NH_3)]([18]crown-6)[Ni(dmit)_2]studied by ESR (2009)
  • Author(s): M.Fujisawa
  • Journal Title: Journal of Physics : Conference Series 150
  • Peer Reviewed
• [Journal Article] Magnetic susceptibility measurement under high pressure and magnetization measurement of S=1/2 dioptase lattice antiferromagnet (2009)
  • Author(s): H.Ohta
  • Journal Title: Journal of Physics : Conference Series 150
  • Peer Reviewed
• [Journal Article] Optical properties of GaInP/GaAs:Er, O/GaInP laser diodes on p-type GaAs substrates grown by organometallic vapor phase epitaxy (2009)
  • Author(s): OTA Y.
  • Journal Title: IOP Conference Series: Materials Science and Engineering 1
  • Peer Reviewed
• [Journal Article] S=1/2 Kagome lattice antiferromagnet Cu_3V_2O_7(OH)_2・2H_2O studied by high field ESR (2009)
  • Author(s): OHTA H.
  • Journal Title: Journal of Physics: Conference Series 145
  • Peer Reviewed
• [Journal Article] Formation of aligned CrN nanoclusters in Cr-delta-doped GaN (2009)
  • Author(s): ZHOU Y. K.
  • Journal Title: Journal of Physics: Condensed Matters 21
  • Peer Reviewed
• [Journal Article] Electroluminescence properties of GaInP/GaAs:Er, O/GaInP double heterostructure light-emitting diodes at low temperature (2009)
  • Author(s): TERAI Y.
  • Journal Title: Optical Materials (印刷中)
  • Peer Reviewed
• [Journal Article] Luminescence properties in Er, O-codoped GaAs light-emitting devices with double excitation mechanism (2009)
  • Author(s): FUJIWARA Y.
  • Journal Title: Materials Research Society Symposium Proceedings (印刷中)
  • Peer Reviewed
• [Journal Article] Development of new-type 1. 5μm light-emitting devices based on Er, O-codoped GaAs (2009)
  • Author(s): FUJIWARA Y.
  • Journal Title: Journal of Physics: Conference Series (印刷中)
  • Peer Reviewed
• [Journal Article] Metalorganic chemical vapor deposition of Er-doped ZnO thin films with 1. 54μm photoluminescence (2009)
  • Author(s): YAMAOKA K.
  • Journal Title: Journal of Physics: Conference Series (印刷中)
  • Peer Reviewed
• [Journal Article] Luminescence properties of Eu-implanted GaN-based semiconductors (2009)
  • Author(s): KASAI H.
  • Journal Title: Journal of Physics: Conference Series (印刷中)
  • Peer Reviewed
• [Journal Article] Structural and magnetic properties of GaGdN/GaN superlattice structures (2009)
  • Author(s): ZHOU Y. K.
  • Journal Title: Thin SolidFilms (印刷中)
  • Peer Reviewed
• [Journal Article] Structural properties of AlCrN, GaCrN and InCrN (2009)
  • Author(s): KIMURA S.
  • Journal Title: Journal of Crystal Growth (印刷中)
  • Peer Reviewed
• [Journal Article] Crystal growth and characterization of GaCrN nanorods on Si substrate (2009)
  • Author(s): TAMBO H.
  • Journal Title: Journal of Crystal Growth (印刷中)
  • Peer Reviewed
• [Journal Article] Ultrafast carrier-capturing in GaInP/ Er, O-codoped GaAs/ GaInP laser diodes grown by organometallic vapor phase epitaxy (2008)
  • Author(s): Y. Terai, K. Hidaka, K. Fujii, S. Takemoto, M. Tonouchi, and Y. Fujiwara
  • Journal Title: Applied Physics Letters Volume: 93 Issue: 23
  • DOI: 10.1063/1.3046784
  • Peer Reviewed
• [Journal Article] Large magnetization in high Gd concentration GaGdN and Si-doped GaGdN grown at low temperatures (2008)
  • Author(s): Y. K. Zhou, S. W. Choi, S. Emura, S. Hasegawa, and H. Asahi
  • Journal Title: Applied Physics Letters Volume: 92 Issue: 6
  • DOI: 10.1063/1.2841657
  • Peer Reviewed
• [Journal Article] Terahertz radiation from Er, O-codoped GaAs surface grown by organometallic vapor phase epitaxy (2008)
  • Author(s): K. Shimada, Y. Terai, S. Takemoto, K. Hidaka, Y. Fujiwara, M. Suzuki, and M. Tonouchi
  • Journal Title: Applied Physics Letters Volume: 92 Issue: 11
  • DOI: 10.1063/1.2901025
  • Peer Reviewed
• [Journal Article] Large magnetization in high Gd concentration GaGdN and Si-doped GaGdN grown at low temperatures (2008)
  • Author(s): Y. K. Zhou, S. W. Choi, S. Emura, S. Hasegawa, H. Asahi
  • Journal Title: Appl.Phys.Lett. 92
  • Peer Reviewed
• [Journal Article] Terahertz radiation from Er, O-codoped GaAs surface grown by organometallic vapor phase epitaxy (2008)
  • Author(s): SHIMADA K.
  • Journal Title: Applied Physics Letters 92
  • Peer Reviewed
• [Journal Article] Ultrafast carrier-capturing in GaInP/Er, O-codoped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy (2008)
  • Author(s): TERAI Y.
  • Journal Title: Applied Physics Letters 93
  • Peer Reviewed
• [Journal Article] GaAs emission from GaInP/Er, O-codoped GaAs/GaInP laser diodes grown by organometallic vapor Phase epitaxy (2008)
  • Author(s): FUJII K.
  • Journal Title: Physica Status Solidi (c) 5 Pages: 2716-2718
  • Peer Reviewed
• [Journal Article] (2008)
  • Author(s): 朝日一(分担執筆)
  • Journal Title: 薄膜ハンドブック(オーム社) Pages: 10-14
• [Journal Article] Ultrafast photoexcited carrier dynamics in GaAs:Er, O by pump and Probe transmission spectroscopy (2008)
  • Author(s): SHIMADA K.
  • Journal Title: Physica Status Solidi (c) 5 Pages: 2861-2863
  • Peer Reviewed
• [Journal Article] Nonradiative processes at low temperature in Er, O-codoped GaAs grown by organometallic vapor phase epitaxy (2008)
  • Author(s): FUJITA A.
  • Journal Title: Physica Status Solidi (c) 5 Pages: 2864-2866
  • Peer Reviewed
• [Journal Article] Organometallic vapor phase epitaxy of Er, O-codoped GaAs using trisdipivaloylmethanatoerbium (2008)
  • Author(s): TERAI Y.
  • Journal Title: Journal of Physics: Conference Series 106
  • Peer Reviewed
• [Journal Article] 希土類添加GaAs結晶の原子レベル制御成長と新規発光デバイスへの応用 (2008)
  • Author(s): 藤原康文
  • Journal Title: オプトロニクス 27 Pages: 157-163
  • Peer Reviewed
• [Journal Article] Electron spin resonance studies of P and B codoped Si nanocrystals (2008)
  • Author(s): FUJIO K.
  • Journal Title: Applied Physics Letters 93
  • Peer Reviewed
• [Journal Article] Low temperature molecular-beam epitaxy growth of cubic GaCrN (2008)
  • Author(s): KIMURA S.
  • Journal Title: Journal of Crystal Growth 310 Pages: 40-46
  • Peer Reviewed
• [Journal Article] Large magnetization in high Gd concentration GaGdN and Si-doped Ga GdN grown at low temperatures (2008)
  • Author(s): ZHOU Y. K.
  • Journal Title: Applied Physics Letters 92
  • Peer Reviewed
• [Journal Article] Growth and characterization of InCrN and (In, Ga, Cr)N (2008)
  • Author(s): KIMURA S.
  • Journal Title: Physica Status Solidi (c) 5 Pages: 1532-1535
  • Peer Reviewed
• [Journal Article] Electronic structure of Gal-xCrxN and Si-doping effects studied by photoem ission and X-ray absorption spectroscopy (2008)
  • Author(s): SONG G. S.
  • Journal Title: Physical Review B 78
  • Peer Reviewed
• [Journal Article] 半導体ヘテロエピタキシーの現状と展望 (2008)
  • Author(s): 朝日一
  • Journal Title: 応用物理 77 Pages: 489-499
  • NAID: 10024191635
  • Peer Reviewed
• [Journal Article] Mechanism of excitation and relaxation in Er,O-codoped GaAs for 1.5μm light-emitting devices with extremely stable wavelength (2008)
  • Author(s): Y. FUJIWARA
  • Journal Title: Physica Status Solidi(a) 205 Pages: 64-67
  • Peer Reviewed
• [Journal Article] Low temperature molecular-beam epitaxy growth of cubic GaCrN (2008)
  • Author(s): S. KIMURA
  • Journal Title: Journal of Crystal Growth 310 Pages: 40-46
  • Peer Reviewed
• [Journal Article] Large magnetization in high Gd concentration GaGdN and Si-doped GaGdN grown at low temperatures (2008)
  • Author(s): Y. K. ZHOU
  • Journal Title: Applied Physics Letters 92
  • Peer Reviewed
• [Journal Article] Electroluminescence properties of GaInP/GaAs:Er, O/GaInP double heterostructurelight-emitting diodes at low temperature (2008)
  • Author(s): Y. TERMI
  • Journal Title: Optical Materials (印刷中)
  • Peer Reviewed
• [Journal Article] Organometallic vapor phase epitaxy of Er, O-codoped GaAs using trisdipivaloylmethanatoerbium (2008)
  • Author(s): Y. TERAI
  • Journal Title: Journal of Physics: Conference Series (印刷中)
  • Peer Reviewed
• [Journal Article] Ultrafast photoexcited carrier dynamics in GaAs: Er, O by pump and probe transmission spectroscopy (2008)
  • Author(s): K. SHIMADA
  • Journal Title: Physica Status Solidi(c) (印刷中)
  • Peer Reviewed
• [Journal Article] Nonradiative processes at low temperature in Er, O-codoped GaAs grown by oreanometallic vapor phase epitaxy (2008)
  • Author(s): A. FUJITA
  • Journal Title: Physica Status Solidi (c) (印刷中)
  • Peer Reviewed
• [Journal Article] GaAs emission from GaInP/Er, O-codoped GaAs/GaInP laser diodes grown by organometallic vapor Phase epitaxy (2008)
  • Author(s): K. FUJII
  • Journal Title: Physica Status Solidi (c) (印刷中)
  • Peer Reviewed
• [Journal Article] Growth and characterization of InCrN and (In, Ga, Cr) N (2008)
  • Author(s): S. KIMURA
  • Journal Title: Physica Status Solidi (c) (印刷中)
  • Peer Reviewed
• [Journal Article] High Gd concentration GaGdN grown at low temperatures (2008)
  • Author(s): Y. K. ZHOU
  • Journal Title: Journal of Superconductivity and Novel Magnetism (印刷中)
  • Peer Reviewed
• [Journal Article] Terahertz radiation from Er, O-codoped GaAs surface grown by organometallic vapour phase epitaxy (2008)
  • Author(s): K. SHIMADA
  • Journal Title: Applied Physics Letters (印刷中)
  • Peer Reviewed
• [Journal Article] Ultrafast carrier-trapping in Er-doped and Er, O-codoped GaAs revealed by pump and probe technique (2007)
  • Author(s): Y. Fujiwara, S. Takemoto, K. Nakamura, K. Shimada, M. Suzuki, K. Hidaka, Y. Terai, and M. Tonouchi
  • Journal Title: Physica B Volume: 401-402 Pages: 234-237
  • DOI: 10.1016/j.physb.2007.08.155
  • Peer Reviewed
• [Journal Article] Direct observation of picosecond-scale energy-transfer processes in Er, O-codoped GaAs by pump-probe reflection technique (2007)
  • Author(s): Y. FUJIWARA
  • Journal Title: Physics of Semiconductors, AIP Conference Proceedings 893 Pages: 245-246
  • Peer Reviewed
• [Journal Article] TEGa, TBAsを用いた有機金属気相エピタキシャル法による低温GaAsの作製 (2007)
  • Author(s): 日高圭二
  • Journal Title: 材料 56 Pages: 880-885
  • Peer Reviewed
• [Journal Article] Ultrafast carrier-trapping in Er-doped and Er, O-codoped GaAs revealed by pump and probe technique (2007)
  • Author(s): Y. FUJIWARA
  • Journal Title: Physica B 401-402 Pages: 234-237
  • Peer Reviewed
• [Journal Article] Growth and Characterization of Ferromagnetic Cubic GaCrN: Structural and magnetic properties (2007)
  • Author(s): S. KIMURA
  • Journal Title: Journal of Crystal Growth 301-302 Pages: 651-655
  • Peer Reviewed
• [Journal Article] Molecular-beam epitaxy growth and characterization of ferromagnetic cubic GaCrN on GaAs substrate (2007)
  • Author(s): S. KOBAYASHI
  • Journal Title: Journal of Crystal Growth 308 Pages: 58-62
  • Peer Reviewed
• [Journal Article] Cr atom alignment in Cr-delta-doped GaN (2007)
  • Author(s): S. KIMURA
  • Journal Title: AIP Conference Proceedings 882 Pages: 410-412
  • Peer Reviewed
• [Presentation] 希土類添加半導体への誘い (2012)
  • Author(s): 藤原康文
  • Organizer: 尼崎市産学公ネットワーク協議会産学交流研究シース発表会
  • Place of Presentation: 尼崎市中小企業センター(大阪府尼崎市)(招待講演)
  • Year and Date: 2012-03-05
• [Presentation] Eu添加GaNを用いた赤色LEDの現状と将来展望 (2012)
  • Author(s): 藤原康文
  • Organizer: 日本学術振興会光電相互変換第125委員会EL分科会第40回研究会
  • Place of Presentation: 金沢工業大学東京虎ノ門キャンパス(東京都港区)(招待講演)
  • Year and Date: 2012-02-17
• [Presentation] Recent Progress in Red LEDs with Eu-doped GaN (2012)
  • Author(s): Y. Fujiwara, A. Nishikawa, and Y. Terai
  • Organizer: Optical Society of America Topical Meeting on Advances in Optical Materials(AIOM), ITh5B. 4
  • Place of Presentation: San Diego, USA
  • Year and Date: 2012-02-02
• [Presentation] Recent Progress in Red LEDs with Eu-doped GaN (2012)
  • Author(s): Y.Fujiwara
  • Organizer: Optical Society of America Topical Meeting on Advances in Optical Materials (AIOM)
  • Place of Presentation: San Diego, USA(招待講演)
  • Year and Date: 2012-02-02
• [Presentation] Recent Progress in Red Light-Emitting Diodes with Eu-Doped GaN (2011)
  • Author(s): Y.Fujiwara
  • Organizer: 18th International Display Workshops 2011 (IDW2011)
  • Place of Presentation: 名古屋国際会議場(名古屋市熱田区)(招待講演)
  • Year and Date: 2011-12-08
• [Presentation] Current status of red light-emitting diodes with Eu-doped GaN (2011)
  • Author(s): Y.Fujiwara
  • Organizer: Special Seminar (hosted by Prof.S.Nakamura), University of California
  • Place of Presentation: University of California at Santa Barbara, USA(招待講演)
  • Year and Date: 2011-10-13
• [Presentation] 希土類添加半導体を用いた発光デバイスの新展開 (2011)
  • Author(s): 寺井慶和
  • Organizer: 日本金属学会分科会シンポジウム「環境・医療・IT調和型デバイス、及び材料の最前線」
  • Place of Presentation: 科学技術館(東京都千代田区)(招待講演)
  • Year and Date: 2011-09-22
• [Presentation] Growth and characterization of GaN-based dilute magnetic semiconductors (2011)
  • Author(s): S.Hasegawa
  • Organizer: Asia-Pacific Workshop on Materials Characterization
  • Place of Presentation: Chennai, India(招待講演)
  • Year and Date: 2011-09-22
• [Presentation] Rare-earth doped III-nitride semiconductors for semiconductor spintronics (2011)
  • Author(s): H. Asahi, S. Hasegawa, Y. K. Zhou, and S. Emura
  • Organizer: 2011 European Materials Research Society Fall Meeting(E-MRS2011_Fall), IX3
  • Place of Presentation: Warsaw, Poland
  • Year and Date: 2011-09-19
• [Presentation] Rare-earth doped III-nitride semiconductors for semiconductor spintronics (2011)
  • Author(s): H.Asahi
  • Organizer: European Materials Research Society Fall 2011 Meeting
  • Place of Presentation: Warsaw, Poland(招待講演)
  • Year and Date: 2011-09-19
• [Presentation] 希土類添加半導体の新展開 (2011)
  • Author(s): 藤原康文
  • Organizer: 日本セラミックス協会第24回秋季シンポジウム「複合アニオン化合物の創製と機能」
  • Place of Presentation: 北海道大学札幌キャンパス(札幌市)(招待講演)
  • Year and Date: 2011-09-08
• [Presentation] OMVPE法により作製したEu添加GaNの発光特性及び赤色発光ダイオードへの応用 (2011)
  • Author(s): 西川敦
  • Organizer: 第3回窒化物半導体結晶成長講演会「窒化物半導体の応用・評価および結晶成長基礎」
  • Place of Presentation: 九州大学筑紫キャンパス(福岡県春日市)(招待講演)
  • Year and Date: 2011-06-17
• [Presentation] Luminescence properties of Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition (2011)
  • Author(s): Y.Terai
  • Organizer: 2011 Materials Research Society Spring Meeting
  • Place of Presentation: Moscone, San Francisco, USA(招待講演)
  • Year and Date: 2011-04-28
• [Presentation] Growth and characterization of GaN-based dilute magnetic semicondcutors and their nanostructures (2011)
  • Author(s): S. Hasegawa, Y. K. Zhou, S. Emura, and H. Asahi
  • Organizer: 2011 Villa Conference on Interactions Among Nanostructures, Red Rock Red Rock Casino, Resort and Spa, Las Vegas
  • Place of Presentation: Nevada, USA
  • Year and Date: 2011-04-21
• [Presentation] Growth and characterization of GaN-based dilute magnetic semicondcutors and their nanostructures (2011)
  • Author(s): S.Hasegawa
  • Organizer: 2011 Villa Conference on Interactions Among Nanostructures
  • Place of Presentation: Red Rock Casino, Resort and Spa, Las Vegas, Nevada, USA(招待講演)
  • Year and Date: 2011-04-21
• [Presentation] 希土類添加半導体に発現する協働的な発光機能制御 (2011)
  • Author(s): 藤原康文
  • Organizer: 第59回応用物理学関係連合講演会シンポジウム「不純物機能活性型材料の機能制御とデバイス応用:機能核モデル」
  • Place of Presentation: 早稲田大学早稲田キャンパス(東京都新宿区)(招待講演)
  • Year and Date: 2011-03-15
• [Presentation] 希土類添加半導体への挑戦～次世代光源の創製にむけて～ (2011)
  • Author(s): 藤原康文
  • Organizer: 静岡大学重点分野「極限画像科学」シンポジウム
  • Place of Presentation: 静岡大学電子工学研究所(浜松市)(招待講演)
  • Year and Date: 2011-03-14
• [Presentation] EuドープGaN赤色発光素子とレーザーへの展望 (2011)
  • Author(s): 藤原康文
  • Organizer: 第7回レーザーディスプレイ技術研究会
  • Place of Presentation: 東京大学生産技術研究所(コンベンションホール)(東京都目黒区)(招待講演)
  • Year and Date: 2011-03-03
• [Presentation] 革新的フルカラーLEDディスプレイ/次世代照明用技術 (2011)
  • Author(s): 藤原康文
  • Organizer: 産学官連携推進大会2011in北大阪
  • Place of Presentation: 大阪国際会議場(大阪市)(招待講演)
  • Year and Date: 2011-02-22
• [Presentation] 希土類添加半導体の不思議に挑む～次世代光源の創成にむけて～ (2011)
  • Author(s): 藤原康文
  • Organizer: 第10回先進技術とビジネス研究会
  • Place of Presentation: 学校法人武庫川学院(甲子園会館)(西宮市)(招待講演)
  • Year and Date: 2011-01-13
• [Presentation] Room-temperature operation of red light-emitting diodes with europium-doped gallium nitride grown by organometallic vapor phase epitaxy (2010)
  • Author(s): 藤原康文
  • Organizer: 第335回蛍光体同学会講演会
  • Place of Presentation: 明治大学駿河台キャンパス(東京都千代田区)(招待講演)
  • Year and Date: 2010-12-04
• [Presentation] Growth and characterization of transition-metal and rare-earth doped III-nitride semiconductors for spintronics (2010)
  • Author(s): H.Asahi
  • Organizer: 2010 MRS Fall Meeting
  • Place of Presentation: Boston, USA(招待講演)
  • Year and Date: 2010-11-30
• [Presentation] 有機金属気相エピタキシャル法によるEu添加GaNの作製と赤色発光ダイオードへの応用 (2010)
  • Author(s): 藤原康文
  • Organizer: 真空・表面科学合同講演会(第30回表面科学学術講演会・第51回真空に関する連合講演会)
  • Place of Presentation: 大阪大学コンベンションセンター(吹田市)(招待講演)
  • Year and Date: 2010-11-04
• [Presentation] ボトムアップ型機能制御による波長超安定LEDの作製 (2010)
  • Author(s): 藤原康文
  • Organizer: 大阪大学ナノ理工学人材育成産学コンソーシアム2010ナノ理工学セミナー「グリーンナノテクノロジー～創・省エネ材料、省エネ電子デバイス～
  • Place of Presentation: 大阪大学豊中キャンパス(豊中市)(招待講演)
  • Year and Date: 2010-11-04
• [Presentation] 希土類添加半導体における希土類イオン励起へのエネルギー伝達 (2010)
  • Author(s): 藤原康文
  • Organizer: 励起ナノプロセス研究会第6回研究会
  • Place of Presentation: ビッグ・アイ(国際障害者交流センター)(堺市)(招待講演)
  • Year and Date: 2010-11-02
• [Presentation] 次世代光源にむけた材料開発 (2010)
  • Author(s): 藤原康文
  • Organizer: 第1回大阪グリーンナノフォーラム
  • Place of Presentation: 大阪市国際交流センター(大阪市)(招待講演)
  • Year and Date: 2010-10-29
• [Presentation] Red light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy (2010)
  • Author(s): Y. Fujiwara, A. Nishikawa, and Y. Terai
  • Organizer: 15th International Workshop on Inorganic and Organic Electroluminescence & 2010 International Conference on the Science and Technology of Emissive Displays and Lighting & XVIII Advanced Display Technologies International Symposium, St
  • Place of Presentation: Petersburg, Russia
  • Year and Date: 2010-10-01
• [Presentation] Room-temperature operation of red light-emitting diodes with europium-doped gallium nitride grown by organometallic vapor phase epitaxy (2010)
  • Author(s): Y.Fujiwara
  • Organizer: 15th International Workshop on Inorganic and Organic Electroluminescence & 2010 International Conference on the Science and Technology of Emissive Displays and Lighting & XVIII Advanced Display Technologies International Symposium
  • Place of Presentation: St.Petersburg, Russia(招待講演)
  • Year and Date: 2010-10-01
• [Presentation] 希土類添加半導体発光デバイス (2010)
  • Author(s): 藤原康文
  • Organizer: 第71回応用物理学会学術講演会、シンポジウム「不純物機能活性型半導体の物性制御とデバイス応用」
  • Place of Presentation: 長崎大学(長崎市)(招待講演)
  • Year and Date: 2010-09-15
• [Presentation] New development in rare-earth-doped semiconductors : room-temperature operation of light-emitting diodes exhibiting rare-earth emission under current injection (2010)
  • Author(s): Y.Fujiwara
  • Organizer: 29th Electronic Materials Symposium
  • Place of Presentation: ラフォーレ修善寺(伊豆市)(招待講演)
  • Year and Date: 2010-07-15
• [Presentation] Organometallic vapor phase epitaxial growth of Eu-doped GaN and its application to red light-emitting diodes operating at room temperature (2010)
  • Author(s): Y. Fujiwara, A. Nishikawa, and Y. Terai
  • Organizer: 3rd International Symposium on Growth of III-Nitrides(ISGN3), WE4-2
  • Place of Presentation: Montpellier, France
  • Year and Date: 2010-07-07
• [Presentation] Organometallic vapor phase epitaxial growth of Eu-doped GaN and its application to red light-emitting diodes operating at room temperature (2010)
  • Author(s): Y.Fujiwara
  • Organizer: Third International Symposium on Growth of III-Nitrides (ISGN3)
  • Place of Presentation: Montpellier, France(招待講演)
  • Year and Date: 2010-07-07
• [Presentation] Room-temperature red emission from light emitting-diodes with Eu-doped GaN grown by organometallic vapour phase epitaxy (2010)
  • Author(s): A.Nishikawa
  • Organizer: 2010 European Materials Research Society Spring Meeting (E-MRS2010)
  • Place of Presentation: Strasbourg, France(招待講演)
  • Year and Date: 2010-06-07
• [Presentation] Atmospheric-pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy (2010)
  • Author(s): N.Furukawa
  • Organizer: 37th International Symposium on Compound Semiconductors
  • Place of Presentation: 高松シンボルタワー(高松市)(招待講演)
  • Year and Date: 2010-06-04
• [Presentation] Recent progress in rare-earth-doped semiconductors (2010)
  • Author(s): Y.Fujiwara
  • Organizer: 2010 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH)
  • Place of Presentation: Portland, USA(招待講演)
  • Year and Date: 2010-05-20
• [Presentation] Rare-earth-doped semiconductor-based light-emitting diodes operating at room temperature (2010)
  • Author(s): 藤原康文
  • Organizer: 4th International Conference on LED and Solid State Lighting(LED2010)
  • Place of Presentation: COEX(ソウル市・韓国)
  • Year and Date: 2010-02-03
• [Presentation] 室温発光強磁性の希土類添加窒化物半導体の創製とスピントロニクス (2010)
  • Author(s): 朝日一
  • Organizer: 応用物理学会関西支部セミナー「光物性とその光機能」
  • Place of Presentation: 大阪府立大学(大阪市)
  • Year and Date: 2010-01-09
• [Presentation] 有機金属気相成長法によるEu添加GaNの作製とLEDデバイス応用 (2010)
  • Author(s): 西川敦
  • Organizer: 応用物理学会関西支部セミナー「光物性とその光機能」
  • Place of Presentation: 大阪府立大学(大阪市)
  • Year and Date: 2010-01-09
• [Presentation] スパッタリング併用MOCVD法によるEu添加ZnOの作製と赤色発光特性 (2010)
  • Author(s): 寺井慶和
  • Organizer: 応用物理学会関西支部セミナー「光物性とその光機能」
  • Place of Presentation: 大阪府立大学(大阪市)
  • Year and Date: 2010-01-09
• [Presentation] Rare-earth-doped semiconductor-based light-emitting diodes operating at room temperature (2010)
  • Author(s): Y. Fuiiwara, A. Nishikawa, Y. Terai
  • Organizer: 4th International Conference on LED and Solid State Lighting (LED2010)
  • Place of Presentation: Seoul, Korea
• [Presentation] Eu添加GaNの有機金属気相エピタキシャル成長と赤色発光ダイオードへの応用 (2009)
  • Author(s): 藤原康文
  • Organizer: 日本学術振興会光電相互変換第125委員会/ワイドギャップ半導体光・電子デバイス第162委員会合同研究会
  • Place of Presentation: ホテルニューアカオ(熱海市)
  • Year and Date: 2009-12-21
• [Presentation] 希土類添加半導体の新展開～電気を流して希土類元素を光らせる～ (2009)
  • Author(s): 藤原康文
  • Organizer: 第3回光エレクトロニクスフォーラム
  • Place of Presentation: 電子会館(大阪市)
  • Year and Date: 2009-11-18
• [Presentation] 有機金属気相エピタキシャル法によるユウロピウム添加GaN赤色発光ダイオードの室温電流注入発光 (2009)
  • Author(s): 西川敦
  • Organizer: 第39回結晶成長国内会議
  • Place of Presentation: 名古屋大学(名古屋市)
  • Year and Date: 2009-11-13
• [Presentation] Growth and characterization of GaN-based room-temperature ferromagnetic semiconductors for semiconductor spintronics (2009)
  • Author(s): 朝日一
  • Organizer: 11th Takayanagi Kenjiro Memorial Symposium
  • Place of Presentation: 静岡大学(浜松市)
  • Year and Date: 2009-11-12
• [Presentation] 1.5μm Er-2O electroluminescence in laser diodes with Er,O-codoped GaAs (2009)
  • Author(s): 藤原康文
  • Organizer: 3rd Workshop of Impurity Based Electroluminescent Devices and Materials
  • Place of Presentation: ゴールデンホテル(トサ市・スペイン)
  • Year and Date: 2009-10-01
• [Presentation] 有機金属気相エピタキシャル法によるEu添加GaNの作製と発光特性 (2009)
  • Author(s): 西川敦
  • Organizer: 第70回応用物理学関係連合講演会多元系機能材料研究会・結晶工学分科会合同企画シンポジウム
  • Place of Presentation: 富山大学(富山市)
  • Year and Date: 2009-09-10
• [Presentation] 希土類添加半導体の新展開:秩序制御と高次量子機能の発現 (2009)
  • Author(s): 藤原康文
  • Organizer: 科学技術による地域活性化戦略」ワークショップ【招待講演】
  • Place of Presentation: 兵庫県民会館(神戸市)
  • Year and Date: 2009-02-21
• [Presentation] Ferromagnetism and luminescence of diluted magnetic semiconductors GaGdN and AlGdN (2008)
  • Author(s): EMURA S.
  • Organizer: 2008 Materials Research Society Fall Meeting【招待講演】
  • Place of Presentation: ボストン(米国)
  • Year and Date: 2008-12-03
• [Presentation] Electron spin resonance study on Er, O-codoped GaAs (2008)
  • Author(s): H. Ohta, M. Fujisawa, M. Yoshida, and Y. Fujiwara
  • Organizer: 2008 Materials Research Society Fall Meeting(MRS2008_Fall), D1. 1
  • Place of Presentation: Boston, USA
  • Year and Date: 2008-12-01
• [Presentation] Electron spin resonance study on Er, O-codoped GaAs (2008)
  • Author(s): OHTA H.
  • Organizer: 2008 Materials Research Society Fall Meeting【招待講演】
  • Place of Presentation: ボストン(米国)
  • Year and Date: 2008-12-01
• [Presentation] Growth and characterization of transition-metal and rare-earth doped III-nitride based magnetic semiconductors for nano-spintronics (2008)
  • Author(s): ASAHI H.
  • Organizer: 4th Handai Nanoscinece and Nanotechnology International Symposium【招待講演】
  • Place of Presentation: 大阪大学(吹田市)
  • Year and Date: 2008-10-01
• [Presentation] Injection-type 1. 5. m light-emitting diodes with Er, O-codoped GaAs exhibiting extremely temperature-stable emission wavelength (2008)
  • Author(s): Y. Fujiwara
  • Organizer: 3rd International Conference on Optical, Optoelectronic and Photonic Materials and Applications
  • Place of Presentation: Edmonton, Canada
  • Year and Date: 2008-07-23
• [Presentation] Injection-type 1. 5μm light-emitting diodes with Er, O-codoped GaAs exhibiting extremely temperature-stable emission wavelength (2008)
  • Author(s): FUJIWARA Y.
  • Organizer: 3rd Int. Conf. on Optical, Optoelectronic and Photonic Materials and Applications【招待講演】
  • Place of Presentation: エドモントン(加国)
  • Year and Date: 2008-07-23
• [Presentation] Quantum properties revealed by precise control of atomic configuration in rare-earth doped semiconductors (2008)
  • Author(s): FUJIWARA Y.
  • Organizer: MRS International Materials Research Conference【招待講演】
  • Place of Presentation: 重慶(中国)
  • Year and Date: 2008-06-11
• [Presentation] 希土類添加半導体の新展開:秩序制御と量子機能能 (2008)
  • Author(s): 藤原康文
  • Organizer: 第2回東京理科大学ポリスケールテクノロジーワークショップ
  • Place of Presentation: 東京理科大学(野田市)
  • Year and Date: 2008-03-07
• [Presentation] Electron spin resonance study on Er, O-codoped GaAs (2008)
  • Author(s): H. Ohta, M. Fujisawa, M. Yoshida, Y. Fujiwara
  • Organizer: 2008 Materials Research Society Fall Meeting
  • Place of Presentation: Boston, USA
• [Presentation] New development in rare-earth doped semiconductors: quantum properties revealed by control of atomic configuration (2007)
  • Author(s): Y. FUJIWARA
  • Organizer: 第12回「半導体スピン工学の基礎と応用」研究会【招待講演】
  • Place of Presentation: 大阪大学(吹田市)
  • Year and Date: 2007-12-21
• [Presentation] Ultrafast carrier-trapping in Er-doped and Er, O-codoped GaAs revealed by pump and probe transmission technique (2007)
  • Author(s): Y. Fujiwara, S. Takemoto, M. Suzuki, K. Shimada, K. Hidaka, Y. Terai, and M. Tonouchi
  • Organizer: 24th International Conference on Defects in Semiconductors(ICDS24), TO4-4
  • Place of Presentation: Albuquerque, USA
  • Year and Date: 2007-07-24
• [Presentation] Ultrafast carrier-trapping in Er-doped and Er, O-codoped GaAs revealed by pump and probe transmission technique (2007)
  • Author(s): Y. FUJIWARA
  • Organizer: 24th International Conference on Defects in Semiconductors (ICDS24)【招待講演】
  • Place of Presentation: アルバカーキー(米国)
  • Year and Date: 2007-07-24
• [Presentation] Injection-type light-emitting devices fabricated by atomically controlled doping of Er to GaAs (2007)
  • Author(s): Y. FUJIWARA
  • Organizer: 2nd Workshop on Photoluminescence in Rare Earths: Photonic Materials and Devices (PRE'07)【招待講演】
  • Place of Presentation: トレント(伊国)
  • Year and Date: 2007-06-01
• [Presentation] MBE growth and characterization of rare-earth doped nitride semiconductors for spintronics (2007)
  • Author(s): H. ASAHI
  • Organizer: 2007 European Materials Research Society Spring Meeting (E-MRS2007) 【招待講演】
  • Place of Presentation: ストラスブール(仏国)
  • Year and Date: 2007-05-31
• [Presentation] New approach to Er, O-codoped GaAs based light-emitting devices with extremely stable wavelength (2007)
  • Author(s): Y. FUJIWARA
  • Organizer: 2007 European Materials Research Society Spring Meeting (E-MRS2007) 【招待講演】
  • Place of Presentation: ストラスブール(仏国)
  • Year and Date: 2007-05-29
• [Book] Materials Research Society Symposium Proceedings Vol.1342, Rare-Earth Doping of Advanced Materials for Photonic Applications (2012)
  • Author(s): V. Dierolf, Y. Fujiwara, T. Gregorkiewicz, and W. M. Jadwisienczak
  • Total Pages: 119
  • Publisher: (Cambridge University Press, New York
• [Book] Materials Research Society Symposium Proceedings Vol.1342, Rare-Earth Doping of Advanced Materials for Photonic Applications (2012)
  • Author(s): V.Dierolf
  • Total Pages: 119
  • Publisher: Cambridge University Press
• [Book] 光技術動向調査報告書 (2011)
  • Author(s): 藤原康文
  • Publisher: 光産業技術振興協会
• [Book] レアアースの最新技術動向と資源戦略 (2011)
  • Author(s): 藤原康文
  • Publisher: シーエムシー出版
• [Book] Materials Research Society Symposium Proceedings Vol.1111, Rare-Earth Doping of Advanced Materials for Photonic Applications (2009)
  • Author(s): V. Dierolf, Y. Fujiwara, U. Hommerich, P. Ruterana, and J. M. Zavada
  • Total Pages: 297
  • Publisher: Materials Research Society, Pennsylvania
• [Book] Rare-Earth Doping of Advanced Materials for Photonic Applications(Materials Research Society Symposium Proceedings) (2009)
  • Author(s): V. Dierolf, Y. Fujiwara, U. Hommerich, P. Ruterana, J. M. Zavada
  • Publisher: Materials Research Society
• [Book] Materials Research Society Symposium Proceedings, Rare-Earth Doping ofAdvanced Materials for Photonic Applications (2009)
  • Author(s): Y.Fujiwara
  • Total Pages: 297
  • Publisher: Materials Research Society
• [Book] Journal of Physics : Conference Series (2009)
  • Author(s): Y.Fujiwara
  • Total Pages: 364
  • Publisher: Institute of Physics Publishing
• [Remarks] 藤原康文:平成23年国立大学法人大阪大学功績賞(研究部門)(大阪大学)、2011年8月1日受賞
• [Remarks] 朝日一:平成23年国立大学法人大阪大学功績賞(研究部門)(大阪大学)、2011年8月1日受賞
• [Remarks] 西川敦、川崎隆司、古川直樹、寺井慶和、藤原康文:第32回応用物理学会優秀論文賞(応用物理学会)、2010年9月14日受賞
• [Remarks] H. Asahi : IPRM Award(IEEE Photonics Society)、2010年6月1日受賞
• [Remarks] 藤原康文:平成21年度国立大学法人大阪大学教育・研究功績賞(大阪大学)、2010年2月16日受賞
• [Remarks] H. Ohta : 2008 International EPR Society Silver Medal for Instrumentation(International EPR Society)、2008年7月16日受賞
• [Remarks] 「光るレアアース赤色LED見えた」、読売新聞朝刊(科学欄)、2011年10月24日新聞報道
• [Remarks] 「世界で初、新型赤色LED」、朝日小学生新聞、2009年7月4日新聞報道
• [Remarks] 「毒性ない赤色LED阪大作製、世界で初成功」、毎日新聞、2009年7月1日新聞報道
• [Remarks] 「世界初赤色LED成功阪大教授ら窒化ガリウムから」、読売新聞、2009年7月1日新聞報道
• [Remarks] 「赤色LED青・緑と同材料で試作阪大チーム既存の技術利用」、日経産業新聞、2009年7月1日新聞報道
• [Remarks] 「阪大、赤色LED作製3ボルトの電圧で発光窒化物半導体を使用」、日刊工業新聞、2009年7月1日新聞報道
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• [Remarks]
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• [Remarks]
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• [Remarks]
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• [Patent(Industrial Property Rights)] 赤色発光半導体素子とその製造方法 (2011)
  • Inventor(s): 藤原康文、西川敦、寺井慶和
  • Industrial Property Rights Holder: 大阪大学
  • Industrial Property Number: 2011-268143
  • Filing Date: 2011-12-07
• [Patent(Industrial Property Rights)] 赤色発光半導体素子とその製造方法 (2011)
  • Inventor(s): 藤原康文、西川敦、寺井慶和
  • Industrial Property Rights Holder: 大阪大学
  • Industrial Property Number: 2011-268141
  • Filing Date: 2011-12-07
• [Patent(Industrial Property Rights)] 赤色発光半導体素子とその製造方法 (2011)
  • Inventor(s): 藤原康文
  • Industrial Property Rights Holder: 大阪大学
  • Industrial Property Number: 2011-268141
  • Filing Date: 2011-12-07
• [Patent(Industrial Property Rights)] 赤色発光半導体素子とその製造方法 (2011)
  • Inventor(s): 藤原康文
  • Industrial Property Rights Holder: 大阪大学
  • Industrial Property Number: 2011-268143
  • Filing Date: 2011-12-07
• [Patent(Industrial Property Rights)] 赤色発光素子および赤色発光素子の製造方法 (2009)
  • Inventor(s): 西川敦、藤原康文、寺井慶和、川崎隆志、古川直樹
  • Industrial Property Rights Holder: 大阪大学
  • Industrial Property Number: 2009-112535
  • Filing Date: 2009-05-07
• [Patent(Industrial Property Rights)] 赤色発光素子および赤色発光素子の製造方法 (2009)
  • Inventor(s): 西川敦, 藤原康文, 寺井慶和, 川崎隆志, 古川直樹
  • Industrial Property Rights Holder: 大阪大学
  • Industrial Property Number: 2009-112535
  • Filing Date: 2009-05-07
• [Patent(Industrial Property Rights)] 赤色発光半導体素子および赤色発光半導体素子の製造方法 (2009)
  • Inventor(s): 藤原康文
  • Industrial Property Rights Holder: 大阪大学
  • Industrial Property Number: 2009-112535
  • Filing Date: 2009-05-07