2D tunnel FET based on understanding of 2D hetero interface characteristics

• Project/Area Number: 19H00755
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Medium-sized Section 21:Electrical and electronic engineering and related fields
• Research Institution: The University of Tokyo
• Principal Investigator: Kosuke NAGASHIO 東京大学, 大学院工学系研究科(工学部), 教授 (20373441)
• Co-Investigator(Kenkyū-buntansha): 吾郷 浩樹 九州大学, グローバルイノベーションセンター, 教授 (10356355)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Project Status: Completed (Fiscal Year 2021)
• Budget Amount: ¥45,500,000 (Direct Cost: ¥35,000,000、Indirect Cost: ¥10,500,000); Fiscal Year 2021: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000); Fiscal Year 2020: ¥21,970,000 (Direct Cost: ¥16,900,000、Indirect Cost: ¥5,070,000); Fiscal Year 2019: ¥17,420,000 (Direct Cost: ¥13,400,000、Indirect Cost: ¥4,020,000)
• Keywords: 超低消費電力 / トンネル現象 / 電界効果トランジスタ / 2次元材料 / 超低消費電力デバイス / トンネルトランジスタ / トンネルFET / 2次元層状材料 / ヘテロ界面 / 低消費電力 / 2Dヘテロ界面 / MoS2 / WSe2 / h-BN

Outline of Research at the Start

IoTデバイスの数は，数年後には～400億個に達すると指摘されており，低消費電力化が期待できる3次元系のトンネルFETが研究されているが，オン電流が低いという問題がある．原子レベルで急峻かつ電気的に不活性である2D-2Dヘテロ界面をトンネルFETに適応することで，トンネル距離を理想的には層間距離であるvan der Waals距離にまで低減できると考えられ，オン電流向上へのブレークスルーとなる可能性がある．本研究課題は，低消費電力デバイスとして期待がかかるトンネルFETに2次元層状物質の原子レベルで急峻かつ電気的に不活性な界面を適応することでさらなる低消費電力化を目指すものである．

Outline of Final Research Achievements

Two-dimensional tunnel FETs (2D-TFETs) that can realize high drive current by reducing the tunnel distance to van der Waals distance as well as low power consumption have been intensively studied. In this study, we investigated high concentration N-type two-dimensional crystals aiming at complementary operation and found that SnS2 is suitable as a high-concentration N-type crystal for TFET. Furthermore, a P+MoS2/N-MoS2 heterostructure tunnel FET was fabricated with h-BN gate dielectric. Finally, we achieved SS of 51 mV / dec, which is less than the theoretical limit of 60 mV/dec of MOSFET. This result is high impact to ultra-low power consumption.

Academic Significance and Societal Importance of the Research Achievements

IoTデバイス数は，数年後には～400億個に達すると指摘されているが，電子デバイスの超低消費電力化が普及の鍵である．本研究では，従来のSiトランジスタ動作の急峻性を表すSSにおいて理論限界値である60 mV/dec以下の51 mV/decを達成した．本成果は，低消費電力デバイスとして期待がかかる2次元トンネルFETの低消費電力動作を実証したものであり，今後の展開が大いに期待される．

Research Products

• [Int'l Joint Research] National Chiao Tung University(台湾)
• [Int'l Joint Research] National Chiao Tung University(その他の国・地域)
• [Journal Article] Identification of the position of piezoelectric polarization at the MoS2/metal interface (2021)
  • Author(s): Umeda Masaya、Higashitarumizu Naoki、Kitaura Ryo、Nishimura Tomonori、Nagashio Kosuke
  • Journal Title: Applied Physics Express Volume: 14 Issue: 12 Pages: 125002-125002
  • DOI: 10.35848/1882-0786/ac3d1f
  • Peer Reviewed / Open Access
• [Journal Article] Thickness-dependent Raman active modes of SnS thin films (2021)
  • Author(s): Yonemori Itsuki、Dutta Sudipta、Nagashio Kosuke、Wakabayashi Katsunori
  • Journal Title: AIP Advances Volume: 11 Issue: 9 Pages: 095106-095106
  • DOI: 10.1063/5.0062857
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Thermodynamic Perspective on the Oxidation of Layered Materials and Surface Oxide Amelioration in 2D Devices (2021)
  • Author(s): Chang Yih-Ren、Nishimura Tomonori、Nagashio Kosuke
  • Journal Title: ACS Applied Materials & Interfaces Volume: 13 Issue: 36 Pages: 43282-43289
  • DOI: 10.1021/acsami.1c13279
  • Peer Reviewed
• [Journal Article] Intrinsic Electronic Transport Properties and Carrier Densities in PtS and SnSe: Exploration of n+‐Source for 2D Tunnel FETs (2021)
  • Author(s): Sato Yuichiro、Nishimura Tomonori、Duanfei Dong、Ueno Keiji、Shinokita Keisuke、Matsuda Kazunari、Nagashio Kosuke
  • Journal Title: Advanced Electronic Materials Volume: 7 Issue: 12 Pages: 2100292-2100292
  • DOI: 10.1002/aelm.202100292
  • Peer Reviewed
• [Journal Article] Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory (2021)
  • Author(s): Sasaki Taro、Ueno Keiji、Taniguchi Takashi、Watanabe Kenji、Nishimura Tomonori、Nagashio Kosuke
  • Journal Title: ACS Nano Volume: 15 Issue: 4 Pages: 6658-6668
  • DOI: 10.1021/acsnano.0c10005
  • Peer Reviewed
• [Journal Article] Quantum-mechanical effect in atomically thin MoS 2 FET (2020)
  • Author(s): Fang Nan、Nagashio Kosuke
  • Journal Title: 2D Materials Volume: 7 Issue: 1 Pages: 014001-014001
  • DOI: 10.1088/2053-1583/ab42c0
  • Peer Reviewed
• [Journal Article] Influence of Interlayer Stacking on Gate-Induced Carrier Accumulation in Bilayer MoS2 (2020)
  • Author(s): Maruyama Mina、Nagashio Kosuke、Okada Susumu
  • Journal Title: ACS Applied Electronic Materials Volume: 2 Issue: 5 Pages: 1352-1357
  • DOI: 10.1021/acsaelm.0c00139
  • NAID: 120007127633
  • Peer Reviewed
• [Journal Article] Purely in-plane ferroelectricity in monolayer SnS at room temperature (2020)
  • Author(s): Higashitarumizu Naoki、Kawamoto Hayami、Lee Chien-Ju、Lin Bo-Han、Chu Fu-Hsien、Yonemori Itsuki、Nishimura Tomonori、Wakabayashi Katsunori、Chang Wen-Hao、Nagashio Kosuke
  • Journal Title: Nature Communications Volume: 11 Issue: 1 Pages: 1-5
  • DOI: 10.1038/s41467-020-16291-9
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene (2020)
  • Author(s): Solis-Fernandez Pablo、Terao Yuri、Kawahara Kenji、Nishiyama Wataru、Uwanno Teerayut、Lin Yung-Chang、Yamamoto Keisuke、Nakashima Hiroshi、Nagashio Kosuke、Hibino Hiroki、Suenaga Kazu、Ago Hiroki
  • Journal Title: ACS Nano Volume: 14 Issue: 6 Pages: 6834-6844
  • DOI: 10.1021/acsnano.0c00645
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Hexagonal Boron Nitride As an Ideal Substrate for Carbon Nanotube Photonics (2020)
  • Author(s): N. Fang, K. Otsuka, A. Ishii, T. Taniguchi, K. Watanabe, K. Nagashio, and Y. K. Kato
  • Journal Title: ACS Photonics Volume: 7 Issue: 7 Pages: 1773-1779
  • DOI: 10.1021/acsphotonics.0c00406
  • Peer Reviewed
• [Journal Article] Understanding interface properties in 2D heterostructure FETs (2020)
  • Author(s): Nagashio Kosuke
  • Journal Title: Semiconductor Science and Technology Volume: 35 Issue: 10 Pages: 103003-103003
  • DOI: 10.1088/1361-6641/aba287
  • Peer Reviewed
• [Journal Article] Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage (2020)
  • Author(s): Sasaki Taro、Ueno Keiji、Taniguchi Takashi、Watanabe Kenji、Nishimura Tomonori、Nagashio Kosuke
  • Journal Title: Small Volume: 16 Issue: 47 Pages: 2004907-2004907
  • DOI: 10.1002/smll.202004907
  • Peer Reviewed
• [Journal Article] All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality (2020)
  • Author(s): Nakamura Keigo、Nagamura Naoka、Ueno Keiji、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
  • Journal Title: ACS Applied Materials & Interfaces Volume: 12 Issue: 46 Pages: 51598-51606
  • DOI: 10.1021/acsami.0c13233
  • Peer Reviewed
• [Journal Article] Carrier Distribution Control in van der Waals Heterostructures of MoS2 and WS2 by Field-Induced Band-Edge Engineering (2020)
  • Author(s): Maruyama Mina、Nagashio Kosuke、Okada Susumu
  • Journal Title: Physical Review Applied Volume: 14 Issue: 4 Pages: 044028-044028
  • DOI: 10.1103/physrevapplied.14.044028
  • NAID: 120007132502
  • Peer Reviewed
• [Journal Article] Micrometer-scale monolayer SnS growth by physical vapor deposition (2020)
  • Author(s): Kawamoto H.、Higashitarumizu N.、Nagamura N.、Nakamura M.、Shimamura K.、Ohashi N.、Nagashio K.
  • Journal Title: Nanoscale Volume: 12 Issue: 45 Pages: 23274-23281
  • DOI: 10.1039/d0nr06022d
  • Peer Reviewed
• [Journal Article] Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices (2019)
  • Author(s): Li Weisheng、Zhou Jian、Cai Songhua、Yu Zhihao、Zhang Jialin、Fang Nan、Li Taotao、Wu Yun、Chen Tangsheng、Xie Xiaoyu、Ma Haibo、Yan Ke、Dai Ningxuan、Wu Xiangjin、Zhao Huijuan、Wang Zixuan、He Daowei、Pan Lijia、Shi Yi、Wang Peng、Chen Wei、Nagashio Kosuke、Duan Xiangfeng、Wang Xinran
  • Journal Title: Nature Electronics Volume: 2 Issue: 12 Pages: 563-571
  • DOI: 10.1038/s41928-019-0334-y
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Full Energy Spectra of Interface State Densities for n ‐ and p ‐type MoS 2 Field‐Effect Transistors (2019)
  • Author(s): Fang Nan、Toyoda Satoshi、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
  • Journal Title: Advanced Functional Materials Volume: 29 Issue: 49 Pages: 1904465-1904465
  • DOI: 10.1002/adfm.201904465
  • Peer Reviewed
• [Journal Article] Influence of interface dipole layers on the performance of graphene field effect transistors (2019)
  • Author(s): Nagamura Naoka、Fukidome Hirokazu、Nagashio Kosuke、Horiba Koji、Ide Takayuki、Funakubo Kazutoshi、Tashima Keiichiro、Toriumi Akira、Suemitsu Maki、Horn Karsten、Oshima Masaharu
  • Journal Title: Carbon Volume: 152 Pages: 680-687
  • DOI: 10.1016/j.carbon.2019.06.038
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Detection of both optical polarization and coherence transfers to excitonic valley states in CVD-grown monolayer MoS2 (2019)
  • Author(s): Asakura Eito、Suzuki Masaki、Karube Shutaro、Nitta Junsaku、Nagashio Kosuke、Kohda Makoto
  • Journal Title: Applied Physics Express Volume: 12 Issue: 6 Pages: 063005-063005
  • DOI: 10.7567/1882-0786/ab21a8
  • NAID: 210000156025
  • Peer Reviewed / Open Access
• [Journal Article] Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes (2019)
  • Author(s): Toyoda Satoshi、Uwanno Teerayut、Taniguchi Takashi、Watanabe Kenji、Nagashio Kosuke
  • Journal Title: Applied Physics Express Volume: 12 Issue: 5 Pages: 055008-055008
  • DOI: 10.7567/1882-0786/ab176b
  • NAID: 210000155715
  • Peer Reviewed
• [Journal Article] Expansion of the Graphdiyne Family: A Triphenylene-Cored Analogue (2018)
  • Author(s): Matsuoka Ryota、Toyoda Ryojun、Shiotsuki Ryo、Fukui Naoya、Wada Keisuke、Maeda Hiroaki、Sakamoto Ryota、Sasaki Sono、Masunaga Hiroyasu、Nagashio Kosuke、Nishihara Hiroshi
  • Journal Title: ACS Applied Materials & Interfaces Volume: 10 Issue: 3 Pages: 2730-2733
  • DOI: 10.1021/acsami.8b00743
  • Peer Reviewed
• [Presentation] Room temperature in-plane ferroelectricity in SnS (2021)
  • Author(s): K. Nagashio
  • Organizer: International Microprocesses and Nanotechnology Conference (MNC2021),(Oct. 27th, Online, 2021)
  • Int'l Joint Research / Invited
• [Presentation] "Two-dimensional tunnel FET" (2021)
  • Author(s): K. Nagashio
  • Organizer: International Conference on Materials and Systems for Sustainability (ICMaSS),(Nov. 5th, Online, 2021).
  • Int'l Joint Research / Invited
• [Presentation] Polarity transition from n-type to p-type WS2 FET by controlling Schottky barrier (2021)
  • Author(s): R. Kato, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio
  • Organizer: International Conference on Solid State Devices and Materials (SSDM), (September. 8, 2021, All-VIRTUAL conference).
  • Int'l Joint Research
• [Presentation] "2D layered semiconductors: Challenge & Perspective" (2021)
  • Author(s): K. Nagashio
  • Organizer: 2021 International Symposium n VLSI Technology, System and Applications (VLSI-TSA), (April, 21, Hsinchu,Taiwan, Online).
  • Int'l Joint Research / Invited
• [Presentation] "50 ns Ultrafast P/E Operation in 2D Heterostructured Non-Volatile Memory Device" (2021)
  • Author(s): Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura,Kosuke Nagashio "
  • Organizer: International Conference on Solid State Devices and Materials (SSDM), (September. 8, 2021, All-VIRTUAL conference).
  • Int'l Joint Research
• [Presentation] "High performance SnS/h-BN heterostructure p-FET via Ti contact reaction" (2021)
  • Author(s): Yih-Ren Chang, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio "
  • Organizer: International Conference on Solid State Devices and Materials (SSDM), (September. 8, 2021, All-VIRTUAL conference).
  • Int'l Joint Research
• [Presentation] "Qualitative Judgement of Inconsistent Band Gap Values for Bulk PdSe2 from Electrical Transport Properties" (2021)
  • Author(s): Wataru Nishiyama, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio, "
  • Organizer: International Conference on Solid State Devices and Materials (SSDM), (September. 8, 2021, All-VIRTUAL conference).
  • Int'l Joint Research
• [Presentation] " Atomic-Step-Induced Screw-Dislocation-Driven Spiral Growth of PVD SnS” (2021)
  • Author(s): Yih-Ren Chang, Chien-Ju Lee, Tomonori Nishimura, Wen-Hao Chang, Kosuke Nagashio "
  • Organizer: 2021 virtual Materials Research Society (MRS) spring meeting, (April, 19, 2021, online).
  • Int'l Joint Research
• [Presentation] "All 2D Heterostructure Tunnel Field Effect Transistors" (2021)
  • Author(s): K. Nagashio
  • Organizer: 5th IEEE Electron Devices Technology and Manufacturing conference 2021 (EDTM), (April, 9, 2021, Chengdu, China, Online). "
  • Int'l Joint Research / Invited
• [Presentation] ”2次元層状物質のデバイス応用の現状と将来展望” (2021)
  • Author(s): 長汐晃輔
  • Organizer: 化学工学会エレクトロニクス部会 先端技術シンポジウム，(2021年12月7日, オンライン開催)．
  • Invited
• [Presentation] "MoS2 同一結晶面内ヘテロを利用した単一ゲート TFET の動作実証" (2021)
  • Author(s): 福井 智博, 谷口 尚, 渡邊 賢司, 西村 知紀, 長汐晃輔
  • Organizer: 2021年第82回応用物理学会秋季学術講演会, (2021年9月13日, オンライン開催).
• [Presentation] "高速パルス電圧ストレス下におけるh-BNの強靭な絶縁破壊耐性による2Dメモリデバイスの超高速動作" (2021)
  • Author(s): 佐々木 太郎, 上野 啓司, 谷口 尚, 渡邉 賢司, 西村 知紀, 長汐 晃輔
  • Organizer: 2021年第82回応用物理学会秋季学術講演会, (2021年9月13日, オンライン開催). "
• [Presentation] "巨大シュタルク効果による2次元材料電界効果トランジスタの移動度変調" (2021)
  • Author(s): "内山 晴貴, 丸山 実那, 岡田 晋, 西村 知紀, 長汐晃輔 "
  • Organizer: 2021年第82回応用物理学会秋季学術講演会, (2021年9月13日, オンライン開催).
• [Presentation] "Thermodynamics perspective to surface oxide amelioration in 2D devices", (2021)
  • Author(s): YihRen Chang, Tomonori Nishimura,Kosuke Nagashio
  • Organizer: 2021年第82回応用物理学会秋季学術講演会, (2021年9月13日, オンライン開催).
• [Presentation] "Current injection into single-crystalline carbon-doped h-BN", (2021)
  • Author(s): "Supawan Ngamprapawat, Takashi Taniguchi,Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio, "
  • Organizer: 2021年第82回応用物理学会秋季学術講演会, (2021年9月12日, オンライン開催).
• [Presentation] "バルクPdSe2 のバンドギャップ値に対する電気伝導特性からの定量的評価", (2021)
  • Author(s): 西山 航, 上野 啓司, 谷口 尚, 渡邊 賢司, 西村 知紀, 長汐 晃輔
  • Organizer: 2021年第82回応用物理学会秋季学術講演会, (2021年9月11日, オンライン開催).
• [Presentation] "次元層状物質の新機能デバイスへの展開” (2021)
  • Author(s): 長汐晃輔
  • Organizer: グラフェンコンソーシアム第26回研究講演会，(2021年8月3日, オンライン開催)．
  • Invited
• [Presentation] "Interface engineering for 2D layered semiconductors", (2020)
  • Author(s): K. Nagashio,
  • Organizer: 2020 Virtual MRS Spring/Fall meeting, (Nov./Dec. 2020, online, USA).
  • Int'l Joint Research / Invited
• [Presentation] ”２次元電子デバイス”， (2020)
  • Author(s): 長汐晃輔，
  • Organizer: 応用物理学会東海支部55周年記念講演，東海ニューフロンティアリサーチワークショップ，(2020年12月-1月，online on-demand)．
  • Invited
• [Presentation] "In-plane ferroelectricity in monolayer SnS", (2020)
  • Author(s): K. Nagshio,
  • Organizer: 6th international Workshop on 2D Materials 2020, supported by A3 Foresight Program, (Sep. 24-25, 2030, Online).
  • Int'l Joint Research / Invited
• [Presentation] "2次元材料の電子デバイス応用", (2020)
  • Author(s): 長汐晃輔,
  • Organizer: FNTG学会リレーウェビナー, (2020年6月30日, zoom webinar).
  • Invited
• [Presentation] "Experimental Demonstration of In-Plane Ferroelectricity in SnS Down to Monolayer", (2020)
  • Author(s): N. Higashitarumizu, H. Kawamoto, C.-J. Lee, B.-H. Lin, F.-H. Chu, I. Yonemori, T. Nishimura, K. Wakabayashi, W.-H. Chang, K. Nagashio,t.
  • Organizer: 2020 Virtual MRS Spring/Fall meeting, (Nov./Dec. 2020, online, USA).
• [Presentation] "The demonstration of SS below 60 mV/dec at RT in all 2D heterostructure TFET", (2020)
  • Author(s): K. Nakamura, N. Nagamura, K. Ueno, T. Taniguchi, K. Watanabe, Kosuke Nagashio,
  • Organizer: International Conference on Solid State Devices and Materials (SSDM), (September. 30, 2020, All-VIRTUAL conference).
• [Presentation] "Understanding the Tunneling Behavior in 2D Based Floating Gate Type Memory Device by Measuring Floating Gate Voltage", (2020)
  • Author(s): Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio,
  • Organizer: International Conference on Solid State Devices and ypMaterials (SSDM), (September. 30, 2020, All-VIRTUAL conference).
• [Presentation] "Carrier Density of Apparently Degenerated PtS2 Determined by Hall Measurement", (2020)
  • Author(s): Yuichiro Sato, Keiji Ueno, Tomonori Nishimura, Kosuke Nagashio,
  • Organizer: International Conference on Solid State Devices and Materials (SSDM), (September. 29, 2020, All-VIRTUAL conference).
• [Presentation] "Screw dislocation driven spiral growth in SnS initiated by atomic graphene steps", (2020)
  • Author(s): Yih-Ren Chang, Naoki Higashitarumizu, Hayami Kawamoto, Fu-Hsien Chu, Chien-Ju Lee, Tomonori Nishimura, Wen-Hao Chang, Kosuke Nagashio,
  • Organizer: International Conference on Solid State Devices and Materials (SSDM), (September. 28, 2020, All-VIRTUAL conference).
• [Presentation] "Understanding the device operation of ambipolar channel based 2D memory devices by trajectory of floating gate voltage", (2020)
  • Author(s): T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio,
  • Organizer: 78th Device Research Conference, (June 23, 2020, Online).
• [Presentation] 浮遊ゲート電位（VFG）のトラジェクトリを用いた2Dメモリデバイスの動作理解, (2020)
  • Author(s): 佐々木 太郎, 上野 啓司, 谷口 尚, 渡邊 賢司, 西村 知紀, 長汐 晃輔,
  • Organizer: 2020年第81回応用物理学会秋季学術講演会, (2020年9月11日, オンライン開催).
• [Presentation] 完全2次元ヘテロTFETによる室温での60mV/dec以下のSS実現, (2020)
  • Author(s): 中村 圭吾, 永村 直佳, 上野 啓司, 谷口 尚, 渡邊 賢司, 長汐 晃輔,
  • Organizer: 2020年第81回応用物理学会秋季学術講演会, (2020年9月11日, オンライン開催).
• [Presentation] 浮遊ゲート電位の測定による2DメモリデバイスのMemory window過大評価の理解, (2020)
  • Author(s): 佐々木 太郎, 上野 啓司, 谷口 尚, 渡邊 賢司, 西村 知紀, 長汐 晃輔,
  • Organizer: 2020年第81回応用物理学会秋季学術講演会, (2020年9月11日, オンライン開催).
• [Presentation] Atomic step induced spiral growth in PVD SnS, (2020)
  • Author(s): YihRen Chang, Naoki Higashitarumizu, Hayami Kawamoto, Tomonori Nishimura, Kosuke Nagashio,
  • Organizer: 2020年第81回応用物理学会秋季学術講演会, (2020年9月10日, オンライン開催).
• [Presentation] CVD-2層グラフェンのh-BNヘテロFET動作解析による結晶性評価, (2020)
  • Author(s): 西山 航, Solis-Fernandez Pablo, 寺尾 友里, 河原 憲治, 吾郷 浩樹, 西村 知紀, 長汐 晃輔,
  • Organizer: 2020年第81回応用物理学会秋季学術講演会, (2020年9月9日, オンライン開催).
• [Presentation] "YSZ極薄膜の高温インピーダンス解析", (2020)
  • Author(s): 西村 知紀, 小島 俊哉, 長汐 晃輔, 丹羽 正昭,
  • Organizer: 2020年第67回応用物理学会春季学術講演会, (2020年3月15日, 上智大学（東京都千代田区)).
• [Presentation] "PVD growth of AA stacking SnS through screw dislocation induced by substrate edge steps", (2020)
  • Author(s): YihRen Chang, Hayami Kawamoto, Naoki Higashitarumizu, Tomonori Nishimura, Kosuke Nagashio,
  • Organizer: 2020年第67回応用物理学会春季学術講演会, (2020年3月15日, 上智大学（東京都千代田区))
• [Presentation] "p+-MoS2/n-MoS2 2D-TFETにおける60 mV/dec以下のS.S.実現", (2020)
  • Author(s): 中村 圭吾, 永村 直佳, 上野 啓司, 谷口 尚, 渡邊 賢司, 長汐 晃輔,
  • Organizer: 2020年第67回応用物理学会春季学術講演会, (2020年3月13日, 上智大学（東京都千代田区)).
• [Presentation] "層状マイカ基板上の 2 次元ピエゾ材料を用いたナノ発電素子", (2020)
  • Author(s): 東垂水 直樹, 川元 颯巳, 梅田 雅也, 北浦 良, 長汐 晃輔,
  • Organizer: [講演奨励賞受賞記念講演] 2020年第67回応用物理学会春季学術講演会, (2020年3月12日, 上智大学（東京都千代田区)).
• [Presentation] "浮遊ゲート電位の測定による2Dメモリデバイス動作の理解", (2020)
  • Author(s): 佐々木 太郎, 谷口 尚, 渡邊 賢司, 西村 知紀, 長汐 晃輔,
  • Organizer: 2020年第67回応用物理学会春季学術講演会, (2020年3月12日, 上智大学（東京都千代田区)).
• [Presentation] "Understanding interface properties in 2D heterostructure FETs" (2019)
  • Author(s): K. Nagashio,
  • Organizer: 2019 Int. Workshop on Dielectric thin films for future electron devices -science and technology -, (Nov. 19, 2019, Tokyo Tech. Tokyo, Japan)
  • Int'l Joint Research / Invited
• [Presentation] "Full energy spectra of interface states density for n- and p-type MoS2 field effect transistors (2019)
  • Author(s): K. Nagashio,
  • Organizer: Recent Progress in Graphene Research(RPGR), (October10, 2019, Kunibiki Messe, Matsue, Shimane, Japan).
  • Int'l Joint Research / Invited
• [Presentation] "2D heterostructure FETs", (2019)
  • Author(s): K. Nagashio,
  • Organizer: PKU-UTokyo Nanocarbon summer camp, (Aug. 2, 2019, UTokyo, Tokyo).
  • Int'l Joint Research / Invited
• [Presentation] "2D layered semiconductors", (2019)
  • Author(s): K. Nagashio,
  • Organizer: 7th International symposium on organic and inorganic electronic materials and related nanotechnology, (June 19-22, 2019, Shinshu Univ. Nagano, Japan).
  • Int'l Joint Research / Invited
• [Presentation] "How to understand interface properties in 2D heterostructure FETs", (2019)
  • Author(s): K. Nagashio,
  • Organizer: 2019 Symposia on VLSI Technology and Circuits, (June 19-14, 2019, RIHGA Royal Hotel, Kyoto, Japan).
  • Int'l Joint Research / Invited
• [Presentation] "2次元層状トランジスタの界面の理解と制御", (2019)
  • Author(s): 長汐 晃輔,
  • Organizer: 2019年電子情報通信学会シリコン材料・デバイス研究会 ,（2019年10月7日, 機械振興会館 (東京)).
  • Invited
• [Presentation] "2次元層状SnSの圧電・強誘電特性", (2019)
  • Author(s): 長汐 晃輔,
  • Organizer: 第23回VBLシンポジウム ,（2019年10月6日, 名古屋大学 (愛知)).
  • Invited
• [Presentation] ”Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS2 FET”, (2019)
  • Author(s): K. Nagashio, K. Taniguchi, and N. Fang,
  • Organizer: Materials Research Meeting 2019, (Dec. 13, 2019, Yokohama Symposia, Yokohama).
  • Int'l Joint Research
• [Presentation] ”Photoresponse in h-BN encapsulated bilayer graphene field-effect phototransistor”, (2019)
  • Author(s): T. Uwanno, T. Taniguchi, K. Watanabe, K. Nagashio,
  • Organizer: Materials Research Meeting 2019, (Dec. 13, 2019, Yokohama Symposia, Yokohama
  • Int'l Joint Research
• [Presentation] "Ferroelectricity in monolayer SnS", (2019)
  • Author(s): K. Nagashio,
  • Organizer: JSPS/EPSRC C2C meeting, (Nov. 22, 2019, Tohoku univ., Sendai)
  • Int'l Joint Research
• [Presentation] "All-2D Flexible Device with Piezoelectric Layered Materials for Highly Sensitive Sensor and Generator Applications", (2019)
  • Author(s): N. Higashitarumizu,
  • Organizer: Recent Progress in Graphene Research(RPGR), (October8, 2019, Kunibiki Messe, Matsue, Shimane, Japan).（Oral）
  • Int'l Joint Research
• [Presentation] "High Temperature Retention Study of MoS2/h-BN/MoS2 Hetero-Stack Based Non-Volatile Memory", (2019)
  • Author(s): T. Sasaki,
  • Organizer: Recent Progress in Graphene Research(RPGR), (October9, 2019, Kunibiki Messe, Matsue, Shimane, Japan).（Poster）
  • Int'l Joint Research
• [Presentation] "Growth and Characterization of High Quality Monolayer SnS", (2019)
  • Author(s): H. Kawamoto,
  • Organizer: Recent Progress in Graphene Research(RPGR), (October7, 2019, Kunibiki Messe, Matsue, Shimane, Japan).（Poster）
  • Int'l Joint Research
• [Presentation] "Selection Mechanism of Band Alignment in 2D p+/n Tunnel FET", (2019)
  • Author(s): K. Nakamura,
  • Organizer: Recent Progress in Graphene Research(RPGR), (October8, 2019, Kunibiki Messe, Matsue, Shimane, Japan).（Oral）
  • Int'l Joint Research
• [Presentation] "Demonstration of Electromechanical Device Based on 2D Piezoelectric Materials for Nanogenerator Applications", (2019)
  • Author(s): N. Higashitarumizu, H. Kawamoto, K. Nagashio,
  • Organizer: International Conference on Solid State Devices and Materials (SSDM), (September. 5, 2019, Nagoya University, Nagoya).
  • Int'l Joint Research
• [Presentation] "388 K High Temperature Retention Study of 2D Hetero-stack Based Non- Volatile Memory", (2019)
  • Author(s): T. Sasaki, T. Taniguchi, K. Watanabe, K. Nagashio,
  • Organizer: International Conference on Solid State Devices and Materials (SSDM), (September. 5, 2019, Nagoya University, Nagoya).
  • Int'l Joint Research
• [Presentation] "Band Alignment in Charge- Transfer-Type p+-WSe2/MoS2 Tunnel FET", (2019)
  • Author(s): K. Nakamura, N. Nagamura, K. Ueno, T. Taniguchi, K. Watanabe, K. Nagashio,
  • Organizer: International Conference on Solid State Devices and Materials (SSDM), (September. 4, 2019, Nagoya University, Nagoya).
  • Int'l Joint Research
• [Presentation] "PVD growth of monolayer SnS under S-rich condition toward piezoelectric application", (2019)
  • Author(s): H. Kawamoto, N. Higashitarumizu, M. Nakamura, I. Yonemori, K. Wakabayashi, K. Nagashio,
  • Organizer: International Conference on Solid State Devices and Materials (SSDM), (September. 4, 2019, Nagoya University, Nagoya).
  • Int'l Joint Research
• [Presentation] "All solid-state 2D tunnel FET", (2019)
  • Author(s): K. Nagashio,
  • Organizer: Compound semiconductor week 2019 (CSW2019), (May 19-23, 2019, Kasugano International Forum, Nara, Japan).
  • Int'l Joint Research
• [Presentation] "Electromechanical Response of Few-to-monolayer SnS PVD-grown on Flexible Mica", (2019)
  • Author(s): N. Higashitarumizu, H. Kawamoto, K. Nagashio,
  • Organizer: 2019 MRS Spring Meeting, (April, 26, 2019, Phoenix Convention Center, Phoenix, USA).
  • Int'l Joint Research
• [Presentation] "Photoresponse in h-BN encapsulated bilayer graphene field-effect phototransistor", (2019)
  • Author(s): Uwanno, T. Taniguchi, K. Watanabe, & K. Nagashio,
  • Organizer: 2019 MRS Spring Meeting, (April, 26, 2019, Phoenix Convention Center, Phoenix, USA).
  • Int'l Joint Research
• [Presentation] ”2次元層状SnSの室温強誘電特性", (2019)
  • Author(s): 東垂水 直樹, 川元 颯巳, 西村 知紀, 張 文豪, 長汐 晃輔",
  • Organizer: 2019年第80回応用物理学会秋季学術講演会,（2019年9月19日, 北海道大学(札幌市)).
• [Presentation] "中心対称性の破れた2次元層状物質の圧電特性", (2019)
  • Author(s): 東垂水 直樹, 川元 颯巳, 梅田 雅也, 北浦 良, 長汐 晃輔,
  • Organizer: 2019年第80回応用物理学会秋季学術講演会,（2019年9月19日, 北海道大学(札幌市)).
• [Presentation] "MoS2/h-BN/Graphite積層構造による不揮発性メモリデバイスの動作解析", (2019)
  • Author(s): 佐々木 太郎, 谷口 尚, 渡邊 賢司, 西村 知紀, 長汐 晃輔,
  • Organizer: 2019年第80回応用物理学会秋季学術講演会,（2019年9月20日, 北海道大学(札幌市)).
• [Presentation] "PtS2/WSe2によるp型2D-TFETにおけるBTBT電流の観測", (2019)
  • Author(s): 佐藤 雄一朗，中村 圭吾，上野 啓司，長汐 晃輔,
  • Organizer: 2019年第80回応用物理学会秋季学術講演会,（2019年9月19日, 北海道大学(札幌市)).
• [Book] 2 次元層状 SnS の面内強誘電性の実証 (2021)
  • Author(s): 東垂水直樹，長汐晃輔
  • Total Pages: 4
  • Publisher: セラミックス，2021, 56, 447-450.
• [Book] "完全二次元層状ヘテロ2層グラフェントランジスタ", グラフェンから広がる二次元物質の新技術と応用, (2020)
  • Author(s): 長汐晃輔,
  • Total Pages: 9
  • Publisher: エヌ・ティー・エス, 東京, 2020, pp. 33-41, ISBN:9784860436636
• [Book] "MoS2 FETにおけるゲート容量の理解", グラフェンから広がる二次元物質の新技術と応用, (2020)
  • Author(s): 長汐晃輔,
  • Total Pages: 9
  • Publisher: エヌ・ティー・エス, 東京, 2020, pp. 183-191. ISBN:9784860436636
• [Book] "2次元層状トンネルFET", ポストグラフェン材料の創製と用途開発最前線, (2020)
  • Author(s): 長汐晃輔,
  • Total Pages: 10
  • Publisher: エヌ・ティー・エス, 東京,2020, pp. 251-260.
• [Book] "2次元層状ヘテロFETにおける界面特性制御", (2020)
  • Author(s): 長汐晃輔,
  • Total Pages: 8
  • Publisher: 応用物理, 2020, 89, 139-146.
• [Book] ”hBNの絶縁性破壊強さの異方性とその起源” (2019)
  • Author(s): 服部吉晃，長汐晃輔，
  • Total Pages: 5
  • Publisher: NEW DIAMOND，2019, 35
• [Remarks] 東京大学 長汐研究室
  • URL: http://webpark1753.sakura.ne.jp/nagashio_lab/
• [Remarks] 東大マテリアル・長汐研
  • URL: http://webpark1753.sakura.ne.jp/nagashio_lab/