| Budget Amount *help |
¥44,850,000 (Direct Cost: ¥34,500,000、Indirect Cost: ¥10,350,000)
Fiscal Year 2022: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000)
Fiscal Year 2021: ¥11,830,000 (Direct Cost: ¥9,100,000、Indirect Cost: ¥2,730,000)
Fiscal Year 2020: ¥14,560,000 (Direct Cost: ¥11,200,000、Indirect Cost: ¥3,360,000)
Fiscal Year 2019: ¥10,140,000 (Direct Cost: ¥7,800,000、Indirect Cost: ¥2,340,000)
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| Outline of Final Research Achievements |
The quality of insulator/GaN interface, which is the key component of GaN-based metal-oxide-semiconductor (MOS) power devices, was successfully improved by means of interface engineering. Although insertion of ultrathin GaOx layer at the insulator/GaN interface significantly reduces the defect density near the conduction band edge of GaN, the GaOx interlayer was found to be vulnerable to the post annealing in a reducing atmosphere, leading to generation of electrical defects in GaN MOS structures. In this study, we investigated electrical properties of the insulator/GaN interface and achieved high quality and highly reliable GaN MOS devices through thorough design of post annealing conditions and deposition method of insulating films.
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