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Creation of Germanium Circular-polarized LED toward Optical Encrypted Communication

Research Project

Project/Area Number 19H02175
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Review Section Basic Section 21050:Electric and electronic materials-related
Research InstitutionTokyo City University

Principal Investigator

Sawano Kentarou  東京都市大学, 理工学部, 教授 (90409376)

Co-Investigator(Kenkyū-buntansha) 徐 学俊  日本電信電話株式会社NTT物性科学基礎研究所, フロンティア機能物性研究部, 主任研究員 (80593334)
浜屋 宏平  大阪大学, 基礎工学研究科, 教授 (90401281)
Project Period (FY) 2019-04-01 – 2022-03-31
Project Status Completed (Fiscal Year 2021)
Budget Amount *help
¥17,420,000 (Direct Cost: ¥13,400,000、Indirect Cost: ¥4,020,000)
Fiscal Year 2021: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2020: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2019: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
Keywordsゲルマニウム / LED / スピントロニクス / 円偏光 / ゲルマニウムLED / スピンLED / 光暗号通信 / SiGe結晶
Outline of Research at the Start

今日、情報量が膨大化、通信が複雑化する中、円偏光利用による光暗号通信が有望である。情報処理を司るのはシリコン(Si)チップであり、そのSiチップから直接円偏光を発生できれば、素子の大幅な小型化、省電力化が達成できる。本研究では、Si基板上に、発光可能な歪みゲルマニウム活性層と、高品質スピントロニクス材料電極を組み合わせ、世界初となる、円偏光発生GeスピンLED創製を目指す。

Outline of Final Research Achievements

Toward realization of Germanium circular-polarized LED for optical encrypted communication, Ge(111) high quality films were grown on Si(111) substrates. By means of wafer transfer technique, Ge-on-Insulator (GOI) substrates were fabricated. By depositing surface passivation films, we obtained large light emission enhancements. Mesa vertical type Ge(111) pin LEDs were fabricated by using in-situ doping, and very strong room temperature EL was successfully obtained. A single crystal high quality ferromagnetic films were grown as electrodes of the LED and the strong EL emission was obtained from the side edge, opening a route to realization of circular polarized light emission.

Academic Significance and Societal Importance of the Research Achievements

本研究により完成した高効率Ge LEDの実現により、シリコンフォトニクス分野において、Si上の発光デバイスの集積化が可能となり、光配線実現へ向けて非常に大きな貢献となる。これにより、半導体チップの劇的な消費電力低減化が期待される。また、円偏光LEDが実現すれば、次世代の量子暗号技術や偏光多重通信、さらに分子認識技術、不揮発性光メモリなどの応用範囲が広がり、産業界に与える影響力が大きい。

Report

(4 results)
  • 2021 Annual Research Report   Final Research Report ( PDF )
  • 2020 Annual Research Report
  • 2019 Annual Research Report
  • Research Products

    (80 results)

All 2022 2021 2020 2019 Other

All Journal Article (24 results) (of which Int'l Joint Research: 3 results,  Peer Reviewed: 24 results,  Open Access: 4 results) Presentation (55 results) (of which Int'l Joint Research: 23 results,  Invited: 4 results) Remarks (1 results)

  • [Journal Article] 8.Room-temperature two-terminal magnetoresistance ratio reaching 0.1 % in semiconductor-based lateral devices with L21-ordered Co2MnSi2021

    • Author(s)
      K. Kudo, M. Yamada, S. Honda, Y. Wagatsuma, S. Yamada, K. Sawano, and K. Hamaya
    • Journal Title

      Applied Physics Letters

      Volume: 118 Issue: 16 Pages: 162404-162404

    • DOI

      10.1063/5.0045233

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of Fe atomic layers at the ferromagnet-semiconductor interface on temperature-dependent spin transport in semiconductors2021

    • Author(s)
      Yamada M.、Shiratsuchi Y.、Kambe H.、Kudo K.、Yamada S.、Sawano K.、Nakatani R.、Hamaya K.
    • Journal Title

      Journal of Applied Physics

      Volume: 129 Issue: 18 Pages: 183901-183901

    • DOI

      10.1063/5.0048321

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Dependences of the hole mobility in the strained Si pMOSFET and gated Hall bars formed on SiGe/Si(110) on the channel direction and the strained Si thickness2021

    • Author(s)
      Keisuke Arimoto, Taisuke Fujisawa, Daichi Namiuchi, Atsushi Onogawa, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa
    • Journal Title

      Journal of Crystal Growth

      Volume: 571 Pages: 126246-126246

    • DOI

      10.1016/j.jcrysgro.2021.126246

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Magnetoresistance ratio of more than 1% at room temperature in germanium vertical spin-valve devices with Co2FeSi2021

    • Author(s)
      Yamada A.、Yamada M.、Honda M.、Yamada S.、Sawano K.、Hamaya K.
    • Journal Title

      Applied Physics Letters

      Volume: 119 Issue: 19 Pages: 192404-192404

    • DOI

      10.1063/5.0061504

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] A drastic increase in critical thickness for strained SiGe by growth on mesa-patterned Ge-on-Si2021

    • Author(s)
      Wagatsuma Youya、Alam Md. Mahfuz、Okada Kazuya、Yamada Michihiro、Hamaya Kohei、Sawano Kentarou
    • Journal Title

      Applied Physics Express

      Volume: 14 Issue: 2 Pages: 025502-025502

    • DOI

      10.35848/1882-0786/abd4c5

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Enhanced electroluminescence from Ge-on-Si by precise in-situ doping and post-annealing2021

    • Author(s)
      Yamada Kodai、Wagatsuma Youya、Okada Kazuya、Hoshi Yusuke、Sawano Kentarou
    • Journal Title

      Applied Physics Express

      Volume: 14 Issue: 4 Pages: 045504-045504

    • DOI

      10.35848/1882-0786/abf0df

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] (Invited) Strain Engineering of Si/Ge Heterostructures on Ge-on-Si Platform2020

    • Author(s)
      Sawano Kentarou、Youya Wagatsuma、Alam Md. M、Omata Kaisei、Niikura Kenta、Shibata Shougo、Hoshi Yusuke、Yamada Michihiro、Hamaya Kohei
    • Journal Title

      ECS Transactions

      Volume: 98 Issue: 5 Pages: 267-276

    • DOI

      10.1149/09805.0267ecst

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Crack formation in strained SiGe grown on Ge-on-Si (111) and its suppression by patterning substrates2020

    • Author(s)
      Wagatsuma Youya、Alam Md Mahfuz、Okada Kazuya、Hoshi Yusuke、Yamada Michihiro、Hamaya Kohei、Sawano Kentarou
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: 117 Pages: 105153-105153

    • DOI

      10.1016/j.mssp.2020.105153

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Large, Tunable Valley Splitting and Single-Spin Relaxation Mechanisms in a Si/SixGe1?x Quantum Dot2020

    • Author(s)
      Hollmann Arne、Struck Tom、Langrock Veit、Schmidbauer Andreas、Schauer Floyd、Leonhardt Tim、Sawano Kentarou、Riemann Helge、Abrosimov Nikolay V.、Bougeard Dominique、Schreiber Lars R.
    • Journal Title

      Physical Review Applied

      Volume: 13 Issue: 3

    • DOI

      10.1103/physrevapplied.13.034068

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Suppression of Donor-Driven Spin Relaxation in Strained Si0.1Ge0.92020

    • Author(s)
      Naito T.、Yamada M.、Yamada S.、Sawano K.、Hamaya K.
    • Journal Title

      Physical Review Applied

      Volume: 13 Issue: 5

    • DOI

      10.1103/physrevapplied.13.054025

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Increased Critical Thickness for Strained SiGe on Ge-on-Si(111)2020

    • Author(s)
      Youya Wagatsuma、Alam Md. M、Okada Kazuya、Hoshi Yusuke、Yamada Michihiro、Hamaya Kohei、Sawano Kentarou
    • Journal Title

      ECS Transactions

      Volume: 98 Issue: 5 Pages: 499-503

    • DOI

      10.1149/09805.0499ecst

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Strong Room-Temperature Electroluminescence from Ge-on-Si by Precise in-situ Doping Control2020

    • Author(s)
      Yamada Kodai、Hoshi Yusuke、Sawano Kentarou
    • Journal Title

      ECS Transactions

      Volume: 98 Issue: 5 Pages: 513-518

    • DOI

      10.1149/09805.0513ecst

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] (Invited) Engineering Strain, Defects, and Electronic Properties of (110)-Oriented Strained Si2020

    • Author(s)
      Arimoto Keisuke、Yamanaka Junji、Hara Kosuke O、Sawano Kentarou、Usami Noritaka、Nakagawa Kiyokazu
    • Journal Title

      ECS Transactions

      Volume: 98 Issue: 5 Pages: 277-290

    • DOI

      10.1149/09805.0277ecst

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Thermoelectric Si1?xGex and Ge epitaxial films on Si(001) with controlled composition and strain for group IV element-based thermoelectric generators2020

    • Author(s)
      Taniguchi Tatsuhiko、Ishibe Takafumi、Hosoda Ryoya、Wagatsuma Youya、Alam Md. Mahfuz、Sawano Kentarou、Uenuma Mutsunori、Uraoka Yukiharu、Yamashita Yuichiro、Mori Nobuya、Nakamura Yoshiaki
    • Journal Title

      Applied Physics Letters

      Volume: 117 Issue: 14 Pages: 141602-141602

    • DOI

      10.1063/5.0023820

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Reduced Inhomogeneous Broadening in Hexagonal Boron Nitride-Encapsulated MoTe2 Monolayers by Thermal Treatment2020

    • Author(s)
      Hayashida Shunya、Saitoh Risa、Watanabe Kenji、Taniguchi Takashi、Sawano Kentarou、Hoshi Yusuke
    • Journal Title

      ACS Applied Electronic Materials

      Volume: 2 Issue: 9 Pages: 2739-2744

    • DOI

      10.1021/acsaelm.0c00452

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Low-frequency spin qubit energy splitting noise in highly purified 28Si/SiGe2020

    • Author(s)
      Struck Tom、Hollmann Arne、Schauer Floyd、Fedorets Olexiy、Schmidbauer Andreas、Sawano Kentarou、Riemann Helge、Abrosimov Nikolay V.、Cywi?ski ?ukasz、Bougeard Dominique、Schreiber Lars R.
    • Journal Title

      npj Quantum Information

      Volume: 6 Issue: 1 Pages: 40-40

    • DOI

      10.1038/s41534-020-0276-2

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Nanostructural effect on thermoelectric properties in Si films containing iron silicide nanodots2020

    • Author(s)
      Sakane Shunya、Ishibe Takafumi、Taniguchi Tatsuhiko、Hinakawa Takahiro、Hosoda Ryoya、Mizuta Kosei、Alam Md. Mahfuz、Sawano Kentarou、Nakamura Yoshiaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: SF Pages: SFFB01-SFFB01

    • DOI

      10.7567/1347-4065/ab5b58

    • NAID

      210000157639

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Hole mobility in Strained Si/Relaxed SiGe/Si(110) hetero structures studied by gated Hall measurements2020

    • Author(s)
      Namiuchi Daichi、Onogawa Atsushi、Fujisawa Taisuke、Sano Yuichi、Izumi Daisuke、Yamanaka Junji、Hara Kosuke O.、Sawano Kentarou、Nakagawa Kiyokazu、Arimoto Keisuke
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: 113 Pages: 105052-105052

    • DOI

      10.1016/j.mssp.2020.105052

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Enhanced photoluminescence from strained Ge-on-Insulator surface-passivated with hydrogenated amorphous Si2020

    • Author(s)
      Niikura Kenta、Yamahata Natsuki、Hoshi Yusuke、Takamura Tsukasa、Saito Kimihiko、Konagai Makoto、Sawano Kentarou
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: 115 Pages: 105104-105104

    • DOI

      10.1016/j.mssp.2020.105104

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Critical thickness of strained Si1-xGex on Ge(111) and Ge-on-Si(111)2019

    • Author(s)
      Alam Md. Mahfuz、Wagatsuma Youya、Okada Kazuya、Hoshi Yusuke、Yamada Michihiro、Hamaya Kohei、Sawano Kentarou
    • Journal Title

      Applied Physics Express

      Volume: 12 Issue: 8 Pages: 081005-081005

    • DOI

      10.7567/1882-0786/ab2db8

    • NAID

      210000156582

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] High thermoelectric performance in high crystallinity epitaxial Si films containing silicide nanodots with low thermal conductivity2019

    • Author(s)
      Sakane Shunya、Ishibe Takafumi、Hinakawa Takahiro、Naruse Nobuyasu、Mera Yutaka、Mahfuz Alam Md.、Sawano Kentarou、Nakamura Yoshiaki
    • Journal Title

      Applied Physics Letters

      Volume: 115 Issue: 18 Pages: 182104-182104

    • DOI

      10.1063/1.5126910

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Semiballistic thermal conduction in polycrystalline SiGe nanowires2019

    • Author(s)
      Okamoto Noboru、Yanagisawa Ryoto、Anufriev Roman、Mahfuz Alam Md.、Sawano Kentarou、Kurosawa Masashi、Nomura Masahiro
    • Journal Title

      Applied Physics Letters

      Volume: 115 Issue: 25 Pages: 253101-253101

    • DOI

      10.1063/1.5130659

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Hole mobility enhancement observed in (110)-oriented strained Si2019

    • Author(s)
      Arimoto Keisuke、Utsuyama Naoto、Mitsui Shohei、Satoh Kei、Yamada Takane、Yamanaka Junji、Hara Kosuke O.、Sawano Kentarou、Nakagawa Kiyokazu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: SG Pages: SGGK06-SGGK06

    • DOI

      10.7567/1347-4065/ab6591

    • NAID

      210000157909

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Conduction Type Control of Ge-on-Insulator : Combination of Smart-CutTM and Defect Elimination2019

    • Author(s)
      K. Yamamoto, K. Nakae, H. Akamine, D. Wang, H. Nakashima, Md M. Alam, K. Sawano, Z. Xue, M. Zhang, and Z. Di
    • Journal Title

      ECS Transactions

      Volume: 93 Pages: 73-77

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Presentation] メサパターン上の歪みSiGe膜へのクラック発生におけるエッチング深さの影響2022

    • Author(s)
      我妻 勇哉、Md. Mahfuz Alam、岡田 和也、金澤伶奈、山田 道洋、浜屋 宏平、澤野 憲太郎
    • Organizer
      第69回 応用物理学会春季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Geマイクロブリッジ上への歪みSiGe成長と発光特性2022

    • Author(s)
      井上 貴裕、我妻 勇哉、池ヶ谷 玲雄、岡田 和也、澤野 憲太郎
    • Organizer
      第69回 応用物理学会春季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Strong room-temperature EL emission from Ge-on-Si(111) diodes with ferromagnetic Schottky-tunnel electrodes2021

    • Author(s)
      Yuwa Sugiura, Masashi Sasaki, Youya Wagatsuma, Koudai Yamada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
    • Organizer
      ISNTT 2021
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Strong resonant light emission in strained Ge microbridges2021

    • Author(s)
      Takahiro Inoue, Youya Wagatsuma, Leo Ikegaya, Kazuya Okada and Kentarou Sawano
    • Organizer
      ISNTT 2021
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Observation of photoluminous from SiGe/Ge MQW on Ge-on-Si(111)2021

    • Author(s)
      Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
    • Organizer
      ISNTT 2021
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Strong room-temperature EL emission from Ge-on-Si(111) diodes2021

    • Author(s)
      Yuwa Sugiura, Masashi Sasaki, Youya Wagatsuma, Koudai Yamada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
    • Organizer
      21st ICMBE 2021
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Epitaxial growth of strained Si0.2Ge0.8 on Ge microbridge2021

    • Author(s)
      Takahiro Inoue, Youya Wagatsuma, Leo Ikegaya, Kazuya Okada and Kentarou Sawano
    • Organizer
      21st ICMBE 2021
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Suppression of crack formation and propagation in strained SiGe by patterning Ge-on-Si substrates2021

    • Author(s)
      Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Rena Kanesawa, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
    • Organizer
      21st ICMBE 2021
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Room temperature EL from strained Ge-on-Si(111) diode structures2021

    • Author(s)
      Yuwa Sugiura, Youya Wagatsuma, Koudai Yamada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
    • Organizer
      EMRS 2021 Spring Meeting
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Effect of uniaxial strain direction on luminescence properties of strained Ge microbridge structures2021

    • Author(s)
      Takahiro Inoue, Youya Wagatsuma, Kodai Yamada and Kentarou Sawano
    • Organizer
      EMRS 2021 Spring Meeting
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Suppression of crack formation in strained SiGe layers by patterning of Ge-on-Si substrates2021

    • Author(s)
      Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
    • Organizer
      EMRS 2021 Spring Meeting
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 歪みSiGe/Ge(111)におけるクラック形成と伝搬方向制御2021

    • Author(s)
      我妻 勇哉、Md. Mahfuz Alam、岡田 和也、金澤伶奈、山田 道洋、浜屋 宏平、澤野 憲太郎
    • Organizer
      第82回 応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] 歪み緩和SiGe/Si(111)バッファー層の作製とアニールの効果2021

    • Author(s)
      岡田 和也、我妻 勇哉,、山田 航大、井上 貴裕、澤野 憲太郎
    • Organizer
      第82回 応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] 歪みGeマイクロブリッジにおける端面共振発光の観測2021

    • Author(s)
      井上 貴裕、我妻 勇哉、池ヶ谷 玲雄、岡田 和也、澤野 憲太郎
    • Organizer
      第82回 応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Ge-on-Si(111)LEDの熱処理による室温EL発光強度増大2021

    • Author(s)
      杉浦 由和 、佐々木 雅至、我妻 勇哉、山田 航大 、星 裕介、山田 道洋、浜屋 宏平、澤野 憲太郎
    • Organizer
      第82回 応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Ge-on-Si(100) p-i-nダイオードの室温 EL 発光における i-Ge 層膜厚の影響2021

    • Author(s)
      佐々木 雅至、杉浦 由和、我妻 勇哉、澤野 憲太郎、山田 航大
    • Organizer
      第82回 応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] メッシュ型パッドを有する歪みGeマイクロブリッジ構造の作製と発光特性2021

    • Author(s)
      池ヶ谷 玲雄、井上 貴裕、佐々木雅至、我妻 勇哉、澤野 憲太郎
    • Organizer
      第82回 応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] In-situドーピング制御によるGe-on-Siからの室温EL発光2021

    • Author(s)
      山田 航大、星 裕介、澤野 憲太郎
    • Organizer
      第68回 応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] 歪・組成制御エピタキシャルSiGe薄膜の熱電特性2021

    • Author(s)
      谷口 達彦、石部 貴史、我妻 勇哉、澤野 憲太郎、山下 雄一郎、中村 芳明
    • Organizer
      第68回 応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 高Q値中赤外Siマイクロディスク共振器2021

    • Author(s)
      三宅 拓磨、徐 学俊、澤野 憲太郎、丸泉 琢也、俵 毅彦、後藤 秀樹
    • Organizer
      第68回 応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 歪みGeマイクロブリッジ構造の発光特性に及ぼす一軸歪み方向の影響2021

    • Author(s)
      井上 貴裕、我妻 勇哉、山田 航大、澤野 憲太郎
    • Organizer
      第68回 応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 二テルル化モリブデンのhBN封止構造における熱安定性2021

    • Author(s)
      林田 隼弥、野上田 聖、渡邊 賢司、谷口 尚、澤野 憲太郎、星 裕介
    • Organizer
      第68回 応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Ge基板に替わりGe-on-Siを用いることによる歪みSiGeへのクラック発生抑制2021

    • Author(s)
      我妻 勇哉、Md. Mahfuz Alam、岡田 和也、山田 道洋、浜屋 宏平、澤野 憲太郎
    • Organizer
      第68回 応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 歪みGe-on-Si(111)ダイオード構造からの室温EL発光2021

    • Author(s)
      杉浦 由和、我妻 勇哉、山田 航大、星 祐介、山田 道洋、浜屋 宏平、澤野 憲太郎
    • Organizer
      第68回 応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] In-situドーピング制御によるGe-on-Siからの室温EL発光2021

    • Author(s)
      山田 航大、星 裕介、澤野 憲太郎
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] イオン注入と熱処理による金属相MoTe2の形成2021

    • Author(s)
      野上田 聖、林田 隼弥、澤野 憲太郎、星 裕介
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 熱電出力因子増大に向けたエピタキシャルCoSi2ナノドット含有SiGe薄膜の開発2021

    • Author(s)
      細田 凌矢、水田 光星、石部 貴史、Md. Mahfuz Alam、澤野 憲太郎、中村 芳明
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 熱処理によるhBN/単層MoTe2ヘテロ構造の界面不純物除去2021

    • Author(s)
      林田 隼弥、渡邊 賢司、谷口 尚、澤野 憲太郎、星 裕介
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 選択成長を用いたGe-on-Si(111)基板上への高品質な歪みSiGe層の作製2021

    • Author(s)
      我妻 勇哉、Md. Mahfuz Alam、岡田 和也、星 裕介、山田 道洋、浜屋 宏平、澤野 憲太郎
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 歪みSi/緩和SiGe/Si(110)ヘテロ構造p-MOSFETにおける正孔移動度のチャネル方向依存性2021

    • Author(s)
      藤澤 泰輔、各川 敦史、浪内 大地、佐野 雄一、泉 大輔、山中 淳二、原 康祐、澤野 憲太郎、中川 清和、有元 圭介
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Strain engineering of Si/Ge heterostructures on Ge-on-Si platform2020

    • Author(s)
      Kentarou Sawano, Youya Wagatsuma, Md. Mahfuz Alam, Kaisei Omata, Kenta Niikura, Shougo Shibata, Yusuke Hoshi, Michihiro Yamada and Kohei Hamaya
    • Organizer
      PRiME 2020
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Increased critical thickness for strained SiGe on Ge-on-Si(111)2020

    • Author(s)
      Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
    • Organizer
      PRiME 2020
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Strong room-temperature electroluminescence from Ge-on-Si by precise in-situ doping control2020

    • Author(s)
      Kodai Yamada, Yusuke Hoshi and Kentarou Sawano
    • Organizer
      PRiME 2020
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Engineering Strain, Defects and Electronic Properties of (110)-Oriented Strained Si2020

    • Author(s)
      K. Arimoto, J. Yamanaka, K. O. Hara, K. Sawano, N. Usami and K. Nakagawa
    • Organizer
      PRiME 2020
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Formation and Evaluation of Al2O3 Layer by Direct ALD on Epitaxial SiGe2020

    • Author(s)
      Hiroshi Nohira, Eriko Shigesawa and Kentarou Sawano
    • Organizer
      PRiME 2020
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Crystal quality degradation in MoTe2 monolayers by a thermal annealing and its suppression by hexagonal boron nitride encapsulation2020

    • Author(s)
      S. Hayashida, R. Saito, K. Watanabe, T. Taniguchi, K. Sawano, Y. Hoshi
    • Organizer
      PRiME 2020
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Silicon Microdisk Resonators in the Mid-Infrared for On-Chip Gas Sensing2020

    • Author(s)
      Miyake Takuma, Rikito Osako, Xuejun Xu, Kentarou Sawano, Takuya Maruizumi, Takehiko Tawara and Hideki Gotoh
    • Organizer
      SSDM 2020
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Ge-on-Si基板のパターニングによる歪みSiGe層中クラック発生の抑制2020

    • Author(s)
      我妻 勇哉、Md. Mahfuz Alam、岡田 和也、星 裕介、山田 道洋、浜屋 宏平、澤野 憲太郎
    • Organizer
      第67回 応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 単層MoTe2のhBN封止構造における熱処理による光学特性への影響2020

    • Author(s)
      林田 隼弥、齋藤 梨沙、渡邊 賢司、谷口 尚、澤野 憲太郎、星 裕介
    • Organizer
      第67回 応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] GOI基板作製における貼り合わせ後熱処理の影響2020

    • Author(s)
      柴田 翔吾、石川 亮佑、星 裕介、澤野 憲太郎
    • Organizer
      第67回 応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Strain states and critical thickness of Si1-xGex epitaxial layers on Ge-on-Si(111)2019

    • Author(s)
      Md. Mahfuz Alam, Kazuya Okada, Yuya Wagatsuma, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya and Kentarou Sawano
    • Organizer
      ISTDM / ICSI 2019 Conference
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Si/Ge Heterostructures with Various Surface Orientations2019

    • Author(s)
      Md. Mahfuz Alam and Kentarou Sawano
    • Organizer
      EMN Epitaxy 2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Thermal stability of mechanically-exfoliated monolayer and few layer MoTe22019

    • Author(s)
      Shunya Hayashida, Kenji Watanabe, Takashi Taniguchi, Kentarou Sawano, and Yusuke Hoshi
    • Organizer
      8th International Symposium on Control of Semiconductor Interfaces
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Surface Morphology Evolution of Strained Si1-xGex Grown on Relaxed Ge(111)2019

    • Author(s)
      Youya Wagatsuma, Md. Mahfuz Alam, Kazuya Okada, Yusuke Hoshi, Michihiro Yamada, Kohei Hamaya, Kentarou Sawano
    • Organizer
      8th International Symposium on Control of Semiconductor Interfaces
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Enhanced Photoluminescence from Strained Ge-on-Insulator Surface-Passivated with Hydrogenated Amorphous Si2019

    • Author(s)
      Kenta Niikura, Yuta Kumazawa, Natsuki Yamahata, Yusuke Hoshi, Tsukasa Takamura, Kimihiko Saito, Makoto Konagai, Kentarou Sawano
    • Organizer
      8th International Symposium on Control of Semiconductor Interfaces
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Optical Interferences in Monolayer Tungsten Disulfide and Tungsten Diselenide Encapsulated by Hexagonal Boron nitride2019

    • Author(s)
      Yusuke Hoshi, Shunya Hayashida, Kentarou Sawano
    • Organizer
      8th International Symposium on Control of Semiconductor Interfaces
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Effect of thermal annealing at a low temperature on exciton dynamics in semiconducting MoTe2 crystals2019

    • Author(s)
      Shunya Hayashida, Kenji Watanabe, Takashi Taniguchi, Kentarou Sawano, and Yusuke Hoshi
    • Organizer
      SSDM2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 歪みSi/緩和SiGe/Si(110)ヘテロ構造の反転キャリアのHall移動度評価2019

    • Author(s)
      浪内 大地、澤野 憲太郎、各川 敦史、佐野 雄一、泉 大輔、有元 圭介、山中 淳二、原 康祐、中川 清和
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 歪みSi/緩和SiGe/Si(110)ヘテロ構造p-MOSFETにおける電界効果移動度の歪みSi膜厚依存性2019

    • Author(s)
      藤澤 泰輔、各川 敦史、浪内 大地、斎藤 慎吾、佐野 雄一、泉 大輔、山中 淳二、原 康祐、澤野 憲太郎、中川 清和、有元 圭介
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Ge-on-Si(111) 及びGe(111) 基板上の歪みSi1-xGexの臨界膜厚2019

    • Author(s)
      我妻 勇哉、Md. Mahfuz Alam、岡田 和也、星 裕介、山田 道洋、浜屋 宏平、澤野 憲太郎
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] hBN/1L-WSe2/hBN構造の光取り出し効率の改善2019

    • Author(s)
      林田 隼弥、渡邊 賢司、谷口 尚、増渕 覚、守谷 頼、町田 友樹、澤野 憲太郎、星 裕介
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] サブ波長格子構造を有するSi中赤外導波路2019

    • Author(s)
      大迫 力人、徐 学俊、忠永 修、澤野 憲太郎、丸泉 琢也、俵 毅彦、後藤 秀樹
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] ナノ多孔層ガラス基板を利用したGeナノドットの作製2019

    • Author(s)
      石井 大介、下田 麻由、伊藤 匠、星 裕介、藤間 卓也、澤野 憲太郎
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] P トープGe-on-Si における拡散ストップ層挿入の効果2019

    • Author(s)
      山田 航大、熊澤 裕太、丸泉 琢也、澤野 憲太郎
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] In-situ ドープによる Ge-on-Si(111)の n 型伝導制御2019

    • Author(s)
      水口 俊希、大島 修一郎、澤野 憲太郎
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Remarks] 東京都市大学総合研究所ナノエレクトロニクス研究センターHP

    • URL

      https://www.arl.tcu.ac.jp/research/nano.html

    • Related Report
      2020 Annual Research Report 2019 Annual Research Report

URL: 

Published: 2019-04-18   Modified: 2023-01-30  

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