• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Formation of directly-bonded interface between gallium oxide and group-IV semiconductor for power device application

Research Project

Project/Area Number 19H02182
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Review Section Basic Section 21050:Electric and electronic materials-related
Research InstitutionNational Institute of Information and Communications Technology

Principal Investigator

Higashiwaki Masataka  国立研究開発法人情報通信研究機構, 未来ICT研究所小金井フロンティア研究センター, 室長 (70358927)

Co-Investigator(Kenkyū-buntansha) 重川 直輝  大阪公立大学, 大学院工学研究科, 教授 (60583698)
梁 剣波  大阪公立大学, 大学院工学研究科, 准教授 (80757013)
Project Period (FY) 2019-04-01 – 2022-03-31
Project Status Completed (Fiscal Year 2022)
Budget Amount *help
¥17,420,000 (Direct Cost: ¥13,400,000、Indirect Cost: ¥4,020,000)
Fiscal Year 2021: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2020: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2019: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
Keywords酸化ガリウム (Ga2O3) / 直接接合 / 表面活性化 / シリコン (Si) / シリコンカーバイド (SiC) / 酸化ガリウム / シリコン / シリコンカーバイド
Outline of Research at the Start

酸化ガリウム (Ga2O3) の有する非常に高い絶縁破壊電界、融液成長バルク基板の存在という材料的メリットを活かした次世代パワーデバイスの実現を目指し、ホール伝導性を有するp型Ga2O3の欠如、低熱伝導率に伴う放熱問題という2つの問題点を解決するための技術開発を行います。本研究課題においては、Ga2O3の有するこれら両課題に対して最も有効な手法であると考えられるGa2O3基板とシリコン (Si) 、シリコンカーバイド (SiC) 基板との直接接合技術を開発し、その接合界面の構造、熱伝導、電気的特性を評価します。

Outline of Final Research Achievements

We have developed a direct bonding technology between a Ga2O3 substrate and a Si or a SiC substrate, which can be an effective solution to the two major issues for Ga2O3: the lack of hole-conductive p-type, and the poor heat dissipation associated with the low thermal conductivity. As a structural study, an intermediate layer formed at a Si/Ga2O3 bonding interface was investigated as a function of post-bonding heat treatment temperature. We also evaluated electrical properties of n-Si/n-Ga2O3 and p-Si/n-Ga2O3 heterojunction diodes and succeeded in identifying their energy band alignments. Furthermore, thermal conductivities of Ga2O3/SiC bonded substrates were characterized using the periodic heating pyrometry, and a high value of about 250 W/mK was obtained for a Ga2O3 thickness of 10 μm.

Academic Significance and Societal Importance of the Research Achievements

表面活性化接合法により、従来のエピタキシャル薄膜成長技術では実現不可能な材料同士の組み合わせによるヘテロ構造を実現することを目的とした研究開発である。本研究成果で、最も一般的な半導体材料であるSiと新規ワイドギャップ半導体であるGa2O3の接合において、比較的高品質な界面が得られることが分かった。今後、この接合法によって作製した新ヘテロ構造を利用した様々なデバイス開発が実施可能と考える。そのため、新半導体ヘテロ接合分野の開拓につながる可能性が有るという点で、学術的・社会的両方の意義がある。

Report

(4 results)
  • 2022 Final Research Report ( PDF )
  • 2021 Annual Research Report
  • 2020 Annual Research Report
  • 2019 Annual Research Report
  • Research Products

    (12 results)

All 2023 2022 2021 2020

All Journal Article (3 results) (of which Peer Reviewed: 3 results) Presentation (9 results) (of which Int'l Joint Research: 5 results,  Invited: 3 results)

  • [Journal Article] Electrical properties and energy band alignments of p-Si/n-Ga2O3 and p+-Si/n-Ga2O3 heterostructures fabricated by surface-activated bonding2023

    • Author(s)
      Zhenwei Wang, Takahiro Kitada, Daiki Takatsuki, Jianbo Liang, Naoteru Shigekawa, and Masataka Higashiwaki
    • Journal Title

      Journal of Applied Physics

      Volume: 133 Issue: 19

    • DOI

      10.1063/5.0128554

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of β-Ga2O3/Si heterointerface and characterization of interfacial structures for high power device applications2022

    • Author(s)
      Liang Jianbo、Takatsuki Daiki、Higashiwaki Masataka、Shimizu Yasuo、Ohno Yutaka、Nagai Yasuyoshi、Shigekawa Naoteru
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 61 Issue: SF Pages: SF1001-SF1001

    • DOI

      10.35848/1347-4065/ac4c6c

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of n-Si/n-Ga2O3 heterojunctions by surface-activated bonding and their electrical properties2022

    • Author(s)
      Zhenwei Wang, Daiki Takatsuki, Jianbo Liang, Takahiro Kitada, Naoteru Shigekawa, and Masataka Higashiwaki
    • Journal Title

      Journal of Applied Physics

      Volume: 131 Issue: 7 Pages: 074501-074501

    • DOI

      10.1063/5.0080734

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Presentation] Development of surface-activated bonding technologies to compensate for shortcomings of Ga2O3 devices2022

    • Author(s)
      Masataka Higashiwaki, Zhenwei Wang, Takahiro Kitada, Naoki Hatta, Kuniaki Yagi, Jianbo Liang, and Naoteru Shigekawa,
    • Organizer
      2022 MRS Spring Meeting and Exhibit
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Ga2O3 device technologies: Power switching and high-frequency applications, and beyond2022

    • Author(s)
      Masataka Higashiwaki, Takafumi Kamimura, Sandeep Kumar, Zhenwei Wang, Takahiro Kitada, Jianbo Liang, Naoteru Shigekawa, Hisashi Murakami, and Yoshinao Kumagai
    • Organizer
      The 5th U.S. Gallium Oxide Workshop (GOX 2022)
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Ga2O3 device physics and engineering for power electronics and new directions2022

    • Author(s)
      Masataka Higashiwaki, Takafumi Kamimura, Sandeep Kumar, Zhenwei Wang, Takahiro Kitada, Jianbo Liang, Naoteru Shigekawa, Hisashi Murakami, and Yoshinao Kumagai
    • Organizer
      The 15th Asia Pacific Physics Conference (APPC15)
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] p-Si/n-Ga2O3 heterostructures fabricated by surface-activated bonding2022

    • Author(s)
      Zhenwei Wang, Daiki Takatsuki, Jianbo Liang, Takahiro Kitada, Naoteru Shigekawa, and Masataka Higashiwaki
    • Organizer
      The 4th International Workshop on Gallium Oxide and Related Materials (IWGO-4)
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Investigation of capacitance-voltage characteristics of p-Si/n-Ga2O3 heterostructures fabricated by surface-activated bonding2022

    • Author(s)
      Zhenwei Wang, Daiki Takatsuki, Jianbo Liang, Takahiro Kitada, Naoteru Shigekawa, and Masataka Higashiwaki
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Investigation of conduction band offset at n-Si/n-Ga2O3 heterojunction fabricated by surface-activated bonding2022

    • Author(s)
      Zhenwei Wang, Daiki Takatsuki, Jianbo Liang, Takahiro Kitada, Naoteru Shigekawa, and Masataka Higashiwaki
    • Organizer
      第69回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Electrical characteristics of n-Ga2O3/n-Si heterojunction formed by surface-activated bonding2021

    • Author(s)
      Zhenwei Wang, Daiki Takatsuki, Jianbo Liang, Naoteru Shigekawa, and Masataka Higashiwaki
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Fabrication of Ga2O3/Si direct bonding interface for high power device applications2021

    • Author(s)
      Jianbo Liang, Daiki Takatsuki, Shimizu Yasuo, Masataka Higashiwaki, Yutaka Ohno, Yasuyoshi Nagai, and Naoteru Shigekawa
    • Organizer
      The 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2021)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] ラマン分光法によるGa2O3ショットキーバリアダイオードの自己発熱評価2020

    • Author(s)
      万 澤欣、高月 大輝、林 家弘、梁 剣波、東脇 正高、重川 直輝
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report

URL: 

Published: 2019-04-18   Modified: 2024-01-30  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi