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Inverstigation on vertical tunnel FET using Si/III-V heterojunction and their three-dimensional integrated circuit applications

Research Project

Project/Area Number 19H02184
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Review Section Basic Section 21060:Electron device and electronic equipment-related
Research InstitutionHokkaido University

Principal Investigator

Tomioka Katsuhiro  北海道大学, 情報科学研究院, 准教授 (60519411)

Co-Investigator(Kenkyū-buntansha) 池辺 将之  北海道大学, 量子集積エレクトロニクス研究センター, 教授 (20374613)
本久 順一  北海道大学, 情報科学研究院, 教授 (60212263)
Project Period (FY) 2019-04-01 – 2022-03-31
Project Status Completed (Fiscal Year 2021)
Budget Amount *help
¥17,680,000 (Direct Cost: ¥13,600,000、Indirect Cost: ¥4,080,000)
Fiscal Year 2021: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2020: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2019: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
Keywordsナノワイヤ / トランジスタ / トンネルFET / FET / III-V / 電気・電子材料 / 半導体デバイス / 結晶成長 / 省エネルギー / ナノ材料 / 薄膜・量子構造 / ナノワイヤ材料
Outline of Research at the Start

本研究は、ナノワイヤ結晶成長で形成されるSi/III-V異種接合を応用することで、低消費電力性能と高性能化を両立した縦型トンネルFETからなる立体集積回路の基盤技術を確立する。具体的には、高品質ナノワイヤチャネルとSi/III-V異種接合を形成することで、Siグリッド細線上に、極低電圧でスイッチングする縦型トンネルFETアレイを集積し結晶成長技術で高性能化を図る。さらに、配線配置の組み合わせで相補型スイッチング動作を実証し、縦型ナノワイヤTFETからなる立体集積回路の基本構成を作製し、回路動作を実証することで、超低消費電力・高効率次世代集積回路の基礎を築く。

Outline of Final Research Achievements

In this research, we developed and explored heterogeneous integration of III-V nanowires heterogeneous for high-speed, low-power, and high-efficiency three-dimensional (3D) circuits application. a nanowire 3D-architecture revolutionized the existing planar integration paradigm, and created a new trend in next-generation electronics. We have created an ultra-efficient tunnel transistors driven by nanowatts based on a new Si/III-V nanowire junction and tunneling transport mechanism. These results would provided new design guidelines for three-dimensional circuit structures based on nanowire TFETs.

Academic Significance and Societal Importance of the Research Achievements

本研究成果によって、超低消費電力で動作するスイッチ素子の作製と集積技術が確立された。爆発的な情報端末・車載エレクトロニクスの普及,人口増加でエネルギー消費量は今後,指数関数的に増加することが予想される次世代エレクトロニクスにおいて、抜本的な省エネルギー化を新しいスイッチ素子、集積方法で実現できるようになる。

Report

(4 results)
  • 2021 Annual Research Report   Final Research Report ( PDF )
  • 2020 Annual Research Report
  • 2019 Annual Research Report
  • Research Products

    (64 results)

All 2022 2021 2020 2019 Other

All Journal Article (12 results) (of which Peer Reviewed: 11 results,  Open Access: 5 results) Presentation (43 results) (of which Int'l Joint Research: 21 results,  Invited: 10 results) Remarks (5 results) Patent(Industrial Property Rights) (4 results) (of which Overseas: 2 results)

  • [Journal Article] Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium2022

    • Author(s)
      Akinobu Yoshida, Hironori Gamo, Junichi Motohisa, Katsuhiro Tomioka
    • Journal Title

      Scientific Reports

      Volume: 12 Issue: 1

    • DOI

      10.1038/s41598-022-05721-x

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Scaling effect on vertical gate-all-around FETs using III-V NW-channels on Si2021

    • Author(s)
      Katsuhiro Tomioka and Junichi Motohisa
    • Journal Title

      IEEE SNW 2021 Tech. Dig.

      Volume: - Pages: 51-52

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] A logical switch to the vertical direction2021

    • Author(s)
      Katsuhiro Tomioka
    • Journal Title

      Compound Semiconductor

      Volume: V Pages: 40-45

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] InGaAsコアマルチシェルナノワイヤ/Si接合による垂直ゲートオールアラウンドトンネルFETの作製2021

    • Author(s)
      冨岡 克広、蒲生 浩憲、本久 順一、福井 孝志
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 120 (SDM2020-52) Pages: 13-16

    • Related Report
      2020 Annual Research Report
  • [Journal Article] Integration of Indium Arsenide/Indium Phosphide Core-Shell Nanowire Vertical Gate-All-Around Field-Effect Transistors on Si2020

    • Author(s)
      Gamo Hironori、Tomioka Katsuhiro
    • Journal Title

      IEEE Electron Device Letters

      Volume: 41 Issue: 8 Pages: 1169-1172

    • DOI

      10.1109/led.2020.3004157

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes2020

    • Author(s)
      Tomioka Katsuhiro、Motohisa Junichi、Fukui Takashi
    • Journal Title

      Scientific Reports

      Volume: 10 Issue: 1

    • DOI

      10.1038/s41598-020-67625-y

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs2020

    • Author(s)
      Akamatsu Tomoya、Tomioka Katsuhiro、Motohisa Junichi
    • Journal Title

      Nanotechnology

      Volume: 31 Issue: 39 Pages: 394003-394003

    • DOI

      10.1088/1361-6528/ab9bd2

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] InGaAs-InP core?shell nanowire/Si junction for vertical tunnel field-effect transistor2020

    • Author(s)
      Tomioka Katsuhiro、Ishizaka Fumiya、Motohisa Junichi、Fukui Takashi
    • Journal Title

      Applied Physics Letters

      Volume: 117 Issue: 12 Pages: 123501-123501

    • DOI

      10.1063/5.0014565

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Selective-Area Growth of AlInAs Nanowires2020

    • Author(s)
      Tai Yoshiki、Gamo Hironori、Motohisa Junichi、Tomioka Katsuhiro
    • Journal Title

      ECS Transactions

      Volume: 98 Issue: 6 Pages: 149-153

    • DOI

      10.1149/09806.0149ecst

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure2020

    • Author(s)
      Tomioka Katsuhiro、Gamo Hironori、Motohisa Junichi、Fukui Takashi
    • Journal Title

      IEEE IEDM Technical Digest

      Volume: IEDM-2020 Pages: 429-432

    • DOI

      10.1109/iedm13553.2020.9371991

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Heterogeneous integration of vertical III-V nanowires on Si and their transistor applications2019

    • Author(s)
      冨岡克広
    • Journal Title

      Oyo Buturi

      Volume: 88 Issue: 4 Pages: 245-251

    • DOI

      10.11470/oubutsu.88.4_245

    • NAID

      130007709428

    • ISSN
      0369-8009, 2188-2290
    • Year and Date
      2019-04-10
    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Vertical Tunnel FET Technologies using III-V/Si heterojunciton2019

    • Author(s)
      K. Tomioka, H. Gamo, J. Motohisa
    • Journal Title

      ECS Transaction

      Volume: 92 Issue: 25 Pages: 71-78

    • DOI

      10.1149/ma2019-02/25/1168

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Presentation] (Invited) Integration of III-V Nanowires on Si and their Device Applications2022

    • Author(s)
      Katsuhiro Tomioka and Junichi Motohisa
    • Organizer
      International 14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2022), Online
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] ナノワイヤ縦型共鳴トンネル電界効果トランジスタの試作2022

    • Author(s)
      田井 良樹、蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第57回応用物理学会北海道支部・第18回日本光学回北海道支部合同学術講演会、オンライン
    • Related Report
      2021 Annual Research Report
  • [Presentation] Characterization of GaSb epitaxial growth and InAs/GaSb core shell nanowires2022

    • Author(s)
      Lian Chen, Hironori Gamo, Junichi Motohisa, Katsuhiro Tomioka
    • Organizer
      第57回応用物理学会北海道支部・第18回日本光学回北海道支部合同学術講演会、オンライン
    • Related Report
      2021 Annual Research Report
  • [Presentation] ナノワイヤ縦型共鳴トンネル電界効果型トランジスタの作製2022

    • Author(s)
      田井 良樹、蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第69回応用物理学会春季学術講演会、ハイブリッド・神奈川
    • Related Report
      2021 Annual Research Report
  • [Presentation] Scaling effect on vertical gate-all-around FETs using III-V NW-channels on Si2021

    • Author(s)
      Katsuhiro Tomioka, Junichi Motohisa
    • Organizer
      2021 Silicon Nanoelectronics Workshop (SNW 2021), Online
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] InP nanowire light-emitting diodes: different junction geometry and their diode properties2021

    • Author(s)
      Shun Kimura, Yu Katsumi, Hironori Gamo, Junichi Motohisa and Katsuhiro Tomioka
    • Organizer
      2021 International Conference on Solid State Device and Materials (SSDM2021),Online
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] (Invited) Integration of III-V Nanowire on Si and Their Device Application2021

    • Author(s)
      Katsuhiro Tomioka, Hironori Gamo, and Junichi Motohisa
    • Organizer
      International Union of Materials Research Societies - International Conference in Asia 2021 (IUMRS-ICA 2021), Online, Jeju, Korea
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Dual switching operation of vertical gate-all-around transistor using InGaAs/GaSb core-shell nanowires on Si2021

    • Author(s)
      Hironori Gamo, Junichi Motohisa, Katsuhiro Tomioka
    • Organizer
      34th International Microprocesses and Nanotechnology Conference (MNC 2021), Online
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] (招待講演)縦型トンネルトランジスタの高性能化2021

    • Author(s)
      冨岡 克広、蒲生 浩憲、本久 順一
    • Organizer
      第85回半導体・集積回路技術シンポジウム、オンライン
    • Related Report
      2021 Annual Research Report
    • Invited
  • [Presentation] (チュートリアル・招待講演)半導体ナノワイヤの成長とデバイス応用2021

    • Author(s)
      本久 順一, 冨岡 克広
    • Organizer
      第13回ナノ構造エピタキシャル成長講演会、オンライン・松山
    • Related Report
      2021 Annual Research Report
    • Invited
  • [Presentation] GaAs/InGaAs/GaAsコアマルチシェルナノワイヤ共振器の発光特性2021

    • Author(s)
      小原 康,冨岡 克広,原 真二郎,本久 順一
    • Organizer
      第56回応用物理学会北海道支部・第17回日本光学回北海道支部合同学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] (招待講演) InGaAsコアマルチシェルナノワイヤ/Si接合による垂直ゲートオールアラウンドトンネルFETの作製2021

    • Author(s)
      冨岡 克広、蒲生 浩憲、本久 順一、福井 孝志
    • Organizer
      2020年度電子情報通信学会 シリコン材料・デバイス研究会
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] Si上のInAs/GaSbコアシェルナノワイヤ縦型サラウンディングゲートトランジスタの試作2021

    • Author(s)
      蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] InPナノワイヤの接合構造と発光ダイオード特性の関係2021

    • Author(s)
      木村 峻、勝見 悠、蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] (Invited) Integration of III-V nanowire LEDs on Si2020

    • Author(s)
      Katsuhiro Tomioka and Junichi Motohisa
    • Organizer
      The 20th International Meeting on Information Display (IMID 2020)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Selective-area growth of InGaAs/GaSb core-shell nanowires on Si2020

    • Author(s)
      Hironori Gamo, Lian Chen, Yu Katsumi, Junichi Motohisa and Katsuhiro Tomioka
    • Organizer
      2020 International Conference on Solid State Device and Materials (SSDM2020)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Control of the size and the emission wavelength in InP-based nanowire quantum dots2020

    • Author(s)
      Tomoya Akamatsu, Masahiro Sasaki, Katsuhiro Tomioka, and Junichi Motohisa
    • Organizer
      2020 International Conference on Solid State Device and Materials (SSDM2020)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Selective-Area Growth of AlInAs Nanowires2020

    • Author(s)
      Y. Tai, J. Motohisa, K. Tomioka
    • Organizer
      Pacific Rim Meeting on electrochemical and solid state science (PRiME 2020)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Vertical Gate-All-Around Tunnel FETs Using InGaAs Nanowire/Si with Core-Multishell Structure2020

    • Author(s)
      Katsuhiro Tomioka, Hironori Gamo, Junichi Motohisa and Takashi Fukui
    • Organizer
      66th International Electron Devices Meeting (IEDM 2020)
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 熱アニールによるInP/InAsPヘテロ構造ナノワイヤのサイズ制御と発光ダイオード応用2020

    • Author(s)
      赤松 知弥、佐々木 正尋、冨岡 克広、本久 順一
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] InPナノワイヤ縦型トンネルFETの作製2020

    • Author(s)
      勝見 悠、蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 有機金属気相選択成長法によるAlInAsナノワイヤ成長とAl組成依存性2020

    • Author(s)
      田井 良樹、蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Si上InAs/GaSbコアシェルナノワイヤ選択成長と電気特性2020

    • Author(s)
      蒲生 浩憲、陳 栎安、勝見 悠、本久 順一、冨岡 克広
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] Si上InAs/GaSbコアシェルナノワイヤ選択成長2020

    • Author(s)
      蒲生 浩憲、冨岡 克広
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] InP(111)B基板上のAlInAsナノワイヤ選択成長2020

    • Author(s)
      田井 良樹、赤松 知弥、蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Radiative and Nonradiative Tunneling in Nanowire Light-Emitting Diodes2019

    • Author(s)
      J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka
    • Organizer
      Compound Semiconductor Week 2019 (CSW 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Demonstration of InAs nanowire vertical transistors2019

    • Author(s)
      H. Gamo, J. Motohisa, K. Tomioka
    • Organizer
      Compound Semiconductor Week 2019 (CSW 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Heteroepitaxial growth of InGaAs/InP/InAlAs/InP core-multishell nanowires on Si for a complementary tunnel FETs2019

    • Author(s)
      K. Tomioka, A. Yoshida, H. Gamo
    • Organizer
      Compound Semiconductor Week 2019 (CSW 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] InP/InAsP/InP heterostructure nanowire LEDs for a single photon emitter2019

    • Author(s)
      T. Akamatsu, M. Sasaki, H. Kameda, K. Tomioka, J. Motohisa
    • Organizer
      Nanowire Week 2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] First demonstration of vertical surrounding-gate transistor using InP nanowires2019

    • Author(s)
      Y. Katsumi, H. Gamo, J. Motohisa, K. Tomioka
    • Organizer
      Nanowire Week 2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Selective-Area Epitaxy of III-V Nanowires on Si and Their Switching Applications2019

    • Author(s)
      K. Tomioka, J. Motohisa
    • Organizer
      7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (Semicon Nano 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Vertical Tunnel FET Technologies Using III-V/Si Heterojunction2019

    • Author(s)
      K. Tomioka, H. Gamo, J. Motohisa
    • Organizer
      236th ECS meeting
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] InAs/InP Core-Shell Nanowire Channel for High-Mobility Vertical Surrounding-Gate Transistors2019

    • Author(s)
      H. Gamo, J. Motohisa, K.Tomioka
    • Organizer
      32nd International Microprocesses and Nanotechnology Conference (MNC 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Vertical Surrounding-gate Transistor Using InP Nanowires2019

    • Author(s)
      Y. Katsumi, H.Gamo, T.Akamatsu, J. Motohisa, K. Tomioka
    • Organizer
      International School and Symposium on Nanoscale Transport and Photonics (ISNTT 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Performance Analysis of InAs/InP Core-shell Nanowire Vertical Surrounding-gate Transistors2019

    • Author(s)
      H. Gamo, T. Akamatsu, J. Motohisa, K. Tomioka
    • Organizer
      International School and Symposium on Nanoscale Transport and Photonics (ISNTT 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] InP-based Nanowires Towards On-demand Single Photon Emitters2019

    • Author(s)
      Junichi Motohisa and Katsuhiro Tomioka
    • Organizer
      XXth International Workshop on Physics of Semiconductor Devices (IWPSD 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] III-V族化合物半導体ナノワイヤチャネルの電子素子応用2019

    • Author(s)
      冨岡克広
    • Organizer
      第24回半導体におけるスピン工学の基礎と応用(PASPS-24)
    • Related Report
      2019 Annual Research Report
    • Invited
  • [Presentation] Si上InGaAs/GaSbコアシェルナノワイヤ選択成長2019

    • Author(s)
      蒲生 浩憲、冨岡 克広
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] InAs/InPコアシェルナノワイヤ縦型サラウンディングゲートトランジスタにおける変調ドープ構造の検討2019

    • Author(s)
      蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] InPナノワイヤサラウンディングゲートトランジスタのスイッチング特性評価2019

    • Author(s)
      勝見 悠、蒲生 浩憲、本久 順一、冨岡 克広
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] InPナノワイヤ量子ドットの熱アニールによる直径微細化と発光特性2019

    • Author(s)
      赤松 知弥、佐々木 正尋、冨岡 克広、本久 順一
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] InP ナノワイヤサラウンディングゲートトランジスタのスイッチング特性評価2019

    • Author(s)
      勝見 悠、蒲生 浩憲、赤松 知弥、本久 順一、冨岡 克広
    • Organizer
      The 38th Electronic Materials Symposium (EMS 38)
    • Related Report
      2019 Annual Research Report
  • [Presentation] 高移動度サラウンディングゲートトランジスタにおける InAs/InP コアシェルナノワイヤヘテロ構造の検討2019

    • Author(s)
      蒲生 浩憲、赤松 知弥、本久 順一、冨岡 克広
    • Organizer
      The 38th Electronic Materials Symposium (EMS 38)
    • Related Report
      2019 Annual Research Report
  • [Remarks] Research map

    • URL

      https://researchmap.jp/read0146924/

    • Related Report
      2021 Annual Research Report 2020 Annual Research Report
  • [Remarks] Katsuhiro Tomioka's page

    • URL

      https://www.rciqe-hokudai-tomioka.com/home

    • Related Report
      2021 Annual Research Report 2020 Annual Research Report
  • [Remarks] Publons

    • URL

      https://publons.com/researcher/2573745/katsuhiro-tomioka/publications/

    • Related Report
      2020 Annual Research Report
  • [Remarks]

    • URL

      https://www.rciqe-hokudai-tomioka.com/home

    • Related Report
      2019 Annual Research Report
  • [Remarks]

    • URL

      https://researchmap.jp/read0146924

    • Related Report
      2019 Annual Research Report
  • [Patent(Industrial Property Rights)] マルチモードスイッチ素子2022

    • Inventor(s)
      蒲生 浩憲、冨岡 克広
    • Industrial Property Rights Holder
      国立大学法人 北海道大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2022-048567
    • Filing Date
      2022
    • Related Report
      2021 Annual Research Report
  • [Patent(Industrial Property Rights)] Group III-V compound semiconductor nanowire, field effect transistor, and switching element2019

    • Inventor(s)
      冨岡克広、福井孝志
    • Industrial Property Rights Holder
      北海道大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Acquisition Date
      2019
    • Related Report
      2019 Annual Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] Tunnel field effect transistor2019

    • Inventor(s)
      冨岡克広、福井孝志
    • Industrial Property Rights Holder
      北海道大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Acquisition Date
      2019
    • Related Report
      2019 Annual Research Report
    • Overseas
  • [Patent(Industrial Property Rights)] トンネル電界効果トランジスタ2019

    • Inventor(s)
      冨岡克広、福井孝志
    • Industrial Property Rights Holder
      北海道大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Acquisition Date
      2019
    • Related Report
      2019 Annual Research Report

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Published: 2019-04-18   Modified: 2023-01-30  

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