• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Research on high performance flexible thermoelectric device focusing on heat transport in amorphous oxide semiconductor

Research Project

Project/Area Number 19H02601
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Review Section Basic Section 29020:Thin film/surface and interfacial physical properties-related
Research InstitutionNara Institute of Science and Technology

Principal Investigator

Uraoka Yukiharu  奈良先端科学技術大学院大学, 先端科学技術研究科, 教授 (20314536)

Co-Investigator(Kenkyū-buntansha) 上沼 睦典  奈良先端科学技術大学院大学, 先端科学技術研究科, 准教授 (20549092)
Bermundo J.P.S  奈良先端科学技術大学院大学, 先端科学技術研究科, 助教 (60782521)
石河 泰明  奈良先端科学技術大学院大学, 先端科学技術研究科, 准教授 (70581130)
Project Period (FY) 2019-04-01 – 2022-03-31
Project Status Completed (Fiscal Year 2021)
Budget Amount *help
¥17,420,000 (Direct Cost: ¥13,400,000、Indirect Cost: ¥4,020,000)
Fiscal Year 2021: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2020: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2019: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
Keywords熱電変換素子 / 酸化物半導体 / 薄膜半導体 / 原子層堆積法 / 半導体デバイス / 熱電素子 / ゼーベック効果 / 半導体 / 酸化物 / 熱抵抗 / 電気抵抗 / 金属酸化物 / フレキシブル基板 / 薄膜トランジスタ / 薄膜材料 / 熱輸送 / 熱伝導度 / 3次元構造
Outline of Research at the Start

高性能な熱電素子を実現するためには、電気伝導度と熱伝道率の独立した制御が不可欠である。一方で、酸化物半導体は、アモルファスでも移動度が高い、低温で薄膜形成が可能、液体プロセスでも形成可能といった興味深い特徴を有している。我々は、これらの特徴は、熱電素子に必要不可欠な熱伝導率制御の可能性を示唆しているのではないかと考えた。そこで、「結晶性」、「形成プロセス方法」、「デバイス構造」の観点から、系統的に実験を進め、アモルファス酸化薄膜における熱輸送の物理を明らかにすると同時にフレキシブル熱電素子の動作実証によって、その原理を検証する。

Outline of Final Research Achievements

We proposed a thermoelectric conversion element using a new thin film material for the purpose of utilizing waste heat in the low temperature region of 200 ° C or less. The material used is an oxide semiconductor such as InGaZnO, which has high mobility even if it is amorphous, can be formed into a thin film at a low temperature, and can be formed by a liquid process. Therefore, from the viewpoints of "crystallineity", "formation process method", and "device structure", we systematically proceed with experiments and create new ideas such as a three-dimensional periodic nanostructure process that enables further reduction of thermal conductivity. The physics of heat transfer in an amorphous oxide thin film was clarified by adding, and at the same time, the principle was verified by demonstrating the operation of a flexible thermoelectric element.

Academic Significance and Societal Importance of the Research Achievements

地球温暖化の防止にむけて、再生エネルギーの研究は喫緊の課題である。本研究では、熱を電気に変換し、電子機器の電源に活用する半導体プロセスや半導体素子の研究を行った。特に、酸化物半導体は、提案形成が可能、電気特性が優れるといった特長を有している。本研究では、酸化物半導体を活用して、効率の高い、使いやすい熱電変換素子の研究を行い、有意義な研究成果を得た。

Report

(4 results)
  • 2021 Annual Research Report   Final Research Report ( PDF )
  • 2020 Annual Research Report
  • 2019 Annual Research Report
  • Research Products

    (23 results)

All 2022 2021 2020 2019 Other

All Int'l Joint Research (1 results) Journal Article (12 results) (of which Int'l Joint Research: 2 results,  Peer Reviewed: 12 results,  Open Access: 1 results) Presentation (9 results) (of which Int'l Joint Research: 9 results,  Invited: 5 results) Book (1 results)

  • [Int'l Joint Research] エコールポリテクニーク(フランス)

    • Related Report
      2019 Annual Research Report
  • [Journal Article] Insulator-to-semiconductor conversion of solution-processed ultra-wide bandgap amorphous gallium oxide via hydrogen annealing2022

    • Author(s)
      Diki Purnawati, Juan Paolo Bermundo, and Yukiharu Uraoka
    • Journal Title

      Applied Physics Express

      Volume: 15 Issue: 2 Pages: 024003-024003

    • DOI

      10.35848/1882-0786/ac466a

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High Mobility silicon indium oxide thin-film transitors fabricated by sputtering process2022

    • Author(s)
      S. Arulkumar, S. Parthiban, J.Y.Kwon, Y.Uraoka, J.P.S. Bermundo, Arka Mukherjee, Bikas C. Das
    • Journal Title

      Vacuum

      Volume: 199 Pages: 110963-110963

    • DOI

      10.1016/j.vacuum.2022.110963

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Improved Thermoelectric Power Factor of InGaZnO/SiO2 Thin Film Transistor via Gate-Tunable Energy Filtering2021

    • Author(s)
      Jenichi Felizco, Mustunori Uenuma, Mami N. Fujii, and Yukiharu Uraoka
    • Journal Title

      IEEE Electron Device Letters

      Volume: 42 Issue: 8 Pages: 1236-1239

    • DOI

      10.1109/led.2021.3093036

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Continuous-Wave Laser Lateral Crystallization of A-Si Thin Films on Polyimide Using a Heatsink Layer Embedded in the Buffer SiO22021

    • Author(s)
      Nobuo Sasaki, Muhammad Arif, Yukiharu Uraoka, Jun Gotoh, Shigeto Sugimoto
    • Journal Title

      Journal of ELECTRONIC MATERIALS

      Volume: 50 Issue: 6 Pages: 2974-2980

    • DOI

      10.1007/s11664-021-08751-9

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Optimizing the thermoelectric performance of InGaZnO thin films depending on crystallinity via hydrogen incorporation2020

    • Author(s)
      Felizco Jenichi Clairvaux、Uenuma Mutsunori、Ishikawa Yasuaki、Uraoka Yukiharu
    • Journal Title

      Applied Surface Science

      Volume: 527 Pages: 146791-146791

    • DOI

      10.1016/j.apsusc.2020.146791

    • NAID

      120007146511

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO2/ZnO and TiO2/ZnO-Sandwiched Multilayer Thin Films2020

    • Author(s)
      Felizco Jenichi、Juntunen Taneli、Uenuma Mutsunori、Etula Jarkko、Tossi Camilla、Ishikawa Yasuaki、Tittonen Ilkka、Uraoka Yukiharu
    • Journal Title

      ACS Applied Materials & Interfaces

      Volume: 12 Issue: 43 Pages: 49210-49218

    • DOI

      10.1021/acsami.0c11439

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] High-Performance Fully Solution-Processed Oxide Thin-Film Transistors via Photo-Assisted Role Tuning of InZnO2020

    • Author(s)
      Corsino Dianne C.、Bermundo Juan Paolo S.、Kulchaisit Chaiyanan、Fujii Mami N.、Ishikawa Yasuaki、Ikenoue Hiroshi、Uraoka Yukiharu
    • Journal Title

      ACS Applied Electronic Materials

      Volume: 2 Issue: 8 Pages: 2398-2407

    • DOI

      10.1021/acsaelm.0c00348

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Improvement in Bias Stress Stability of Solution-Processed Amorphous InZnO Thin-Film Transistors via Low-Temperature Photosensitive Passivation2020

    • Author(s)
      Safaruddin Aimi Syairah、Bermundo Juan Paolo Soria、Yoshida Naofumi、Nonaka Toshiaki、Fujii Mami N.、Ishikawa Yasuaki、Uraoka Yukiharu
    • Journal Title

      IEEE Electron Device Letters

      Volume: 41 Issue: 9 Pages: 1372-1375

    • DOI

      10.1109/led.2020.3011683

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Unique degradation under AC stress in high-mobility amorphous InWZnO thin-film transistors2020

    • Author(s)
      Takahashi Takanori、Fujii Mami N.、Miyanaga Ryoko、Miyanaga Miki、Ishikawa Yasuaki、Uraoka Yukiharu
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 5 Pages: 054003-054003

    • DOI

      10.35848/1882-0786/ab88c5

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Development of High-Reliability and -Stability Chemical Sensors Based on an Extended-Gate Type Amorphous Oxide Semiconductor Thin-Film Transistor2020

    • Author(s)
      Yuki Hashima, Takanori Takahashi, Yasuaki Ishikawa, and Yukiharu Uraoka
    • Journal Title

      ACS Appl. Electron. Mater.

      Volume: 2 Issue: 2 Pages: 405-408

    • DOI

      10.1021/acsaelm.9b00844

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Hot carrier effects in InGaZnO thin-film transistor2019

    • Author(s)
      T. Takahashi, R. Miyanaga, M. N. Fujii, J. Tanaka, K. Takechi, H. Tanabe, J. P. Bermundo, Y. Ishikawa and Y. Uraoka
    • Journal Title

      Applied Physics Express

      Volume: 12 Issue: 9 Pages: 094007-094007

    • DOI

      10.7567/1882-0786/ab3c43

    • NAID

      210000156978

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Degradation phenomenon in metal-oxide semiconductor thin-film transistors and technique for its reliability evaluation and suppression2019

    • Author(s)
      Y.Uraoka, J. P. Bermundo, M.N. Fujii, M. Uenuma, and Y. Ishikawa
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: 9 Pages: 090502-090502

    • DOI

      10.7567/1347-4065/ab1604

    • NAID

      210000155669

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Presentation] High performance Metal Oxide Thin Film Transistors for flexible Devices2021

    • Author(s)
      Yukiharu Uraoka
    • Organizer
      MRM2021
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] High Metal Oxide Thin Film Transistors fabricated by Solution Process2021

    • Author(s)
      Yukiharu Uraoka
    • Organizer
      ITC2020-2021
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Metal Oxide Thin Film Transistors fabricated by Solution Process2021

    • Author(s)
      Yukiharu Uraoka
    • Organizer
      ICFPE 2021
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Degradation Mechanism of High Mobility Oxide Thin Film Transistors for Next Generation Display2021

    • Author(s)
      Yukiharu Uraoaka
    • Organizer
      ICDT (Inetrnational Conference on Display Technology)
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Bayesian optimization and expected hyper volume improvement for SiO2/GaN capacitor2020

    • Author(s)
      Mutsunori Uenuma, Yukiharu Uraoka
    • Organizer
      International Conference on Solid State Devices and Materials
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Hot Carrier Degradation in High Mobility Metal Oxide Thin Film Transistors2020

    • Author(s)
      Yukiharu Uraoka
    • Organizer
      SID2020
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Thermoelectric Properties in Thin Film with pn Junction2019

    • Author(s)
      Hoshito Murakawa, Mutsunori Uenuma, Jenichi Felizco, Yukiharu Uraoka
    • Organizer
      17th European Conference on Thermoelectrics
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Film TEG with Controlled Heat Flow2019

    • Author(s)
      Mutsunori Uenuma, Yukiharu Uraoka
    • Organizer
      17th European Conference on Thermoelectrics
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Inducing Thermoelectricity in C-axis Aligned Crystalline InGaZnO Thin Film via Hydrogen Annealing2019

    • Author(s)
      Jenichi Clairvaux Felizco, Hoshito Murakawa, Yasuaki Ishikawa, Yukiharu Uraoka
    • Organizer
      International Conference on Solid State Devices and Materials 2019
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Book] マテリアルインフォマティクス Q&A集2020

    • Author(s)
      浦岡行治他
    • Total Pages
      596
    • Publisher
      株式会社 情報機構
    • ISBN
      9784865022049
    • Related Report
      2020 Annual Research Report

URL: 

Published: 2019-04-18   Modified: 2023-12-25  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi