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Development of high-mobility diamond FETs using h-BN heterostructures and exploration of their quantum transport phenomena

Research Project

Project/Area Number 19H02605
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Review Section Basic Section 29020:Thin film/surface and interfacial physical properties-related
Research InstitutionNational Institute for Materials Science

Principal Investigator

YAMAGUCHI Takahide  国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 主幹研究員 (70399385)

Project Period (FY) 2019-04-01 – 2022-03-31
Project Status Completed (Fiscal Year 2021)
Budget Amount *help
¥17,810,000 (Direct Cost: ¥13,700,000、Indirect Cost: ¥4,110,000)
Fiscal Year 2021: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2020: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2019: ¥12,350,000 (Direct Cost: ¥9,500,000、Indirect Cost: ¥2,850,000)
Keywordsダイヤモンド / 電界効果トランジスタ / 移動度 / 六方晶窒化ホウ素 / 量子振動 / ワイドバンドギャップ / 水素終端 / トランスファードーピング / 量子輸送 / 磁気抵抗
Outline of Research at the Start

ダイヤモンドはワイドバンドギャップや、高絶縁破壊電界、高熱伝導度などの優れた特性をもち、次世代半導体材料として期待されている。本研究ではグラフェン等の2次元物質の研究手法を利用して、ダイヤモンド電界効果トランジスタ(FET)の特性、特に移動度を飛躍的に向上させる。具体的には、これまでAl2O3などのアモルファスの酸化物が使われてきたゲート絶縁体に、荷電不純物の少ない単結晶の六方晶窒化ホウ素(h-BN)を利用する。高品質なダイヤモンド/h-BNヘテロ界面の形成によって高移動度化を追求し、高周波増幅器・省電力高速スイッチング素子の実現および新規量子物性の探索を行う。

Outline of Final Research Achievements

We have conducted research on performance improvement of diamond field-effect transistors (FETs), which have potential applications in power electronics and communications. We have successfully detected clear quantum oscillations (Shubnikov-de Haas oscillations), whose frequency depended on gate voltage, by using hexagonal boron nitride (h-BN) as a gate insulator for diamond FETs and thereby increasing their channel mobility. The lamination of hydrogen-terminated diamond surface with h-BN without exposure to air decreased the density of atmospheric charged impurities at the interface and enabled us to further increase a room-temperature channel mobility of diamond FETs to 680 cm2V-1s-1, which is among the highest among wide-bandgap p-channel FETs reported so far.

Academic Significance and Societal Importance of the Research Achievements

ダイヤモンド電界効果トランジスタのチャネル移動度向上は、素子の低損失化、高速化、および小型化につながる成果である。とくに、これまでのトランスファードーピングに基づいた特殊な設計ではなく、シリコンなどの一般的な半導体のFETと同様の設計指針に基づいて水素終端ダイヤモンドFETを作製できることを実証できたことは、今後のダイヤモンド素子開発の重要な基盤になると考えられる。また、量子輸送現象の観測はダイヤモンド表面の二次元正孔系についての知見を与えただけでなく、超伝導やスピントロニクス分野への波及効果も期待できる成果である。

Report

(4 results)
  • 2021 Annual Research Report   Final Research Report ( PDF )
  • 2020 Annual Research Report
  • 2019 Annual Research Report
  • Research Products

    (19 results)

All 2022 2021 2020 2019 Other

All Journal Article (4 results) (of which Peer Reviewed: 3 results,  Open Access: 3 results) Presentation (13 results) (of which Int'l Joint Research: 8 results,  Invited: 5 results) Remarks (2 results)

  • [Journal Article] High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures2022

    • Author(s)
      Yosuke Sasama, Taisuke Kageura, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide
    • Journal Title

      Nature Electronics

      Volume: 5 Issue: 1 Pages: 37-44

    • DOI

      10.1038/s41928-021-00689-4

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors2020

    • Author(s)
      Sasama Yosuke、Kageura Taisuke、Komatsu Katsuyoshi、Moriyama Satoshi、Inoue Jun-ichi、Imura Masataka、Watanabe Kenji、Taniguchi Takashi、Uchihashi Takashi、Takahide Yamaguchi
    • Journal Title

      Journal of Applied Physics

      Volume: 127 Issue: 18 Pages: 185707-185707

    • DOI

      10.1063/5.0001868

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Quantum oscillations in diamond field-effect transistors with a h-BN gate dielectric2019

    • Author(s)
      Sasama Yosuke、Komatsu Katsuyoshi、Moriyama Satoshi、Imura Masataka、Sugiura Shiori、Terashima Taichi、Uji Shinya、Watanabe Kenji、Taniguchi Takashi、Uchihashi Takashi、Takahide Yamaguchi
    • Journal Title

      Physical Review Materials

      Volume: 3 Issue: 12

    • DOI

      10.1103/physrevmaterials.3.121601

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] h-BNヘテロ界面を用いた高移動度ダイヤモンド電界効果トランジスタ2019

    • Author(s)
      笹間陽介、小松克伊、森山悟士、井村将隆、寺地徳之、渡邊賢司、谷口尚、内橋隆、山口尚秀
    • Journal Title

      NEW DIAMOND

      Volume: 134 Pages: 9-15

    • Related Report
      2019 Annual Research Report
  • [Presentation] h-BNゲート絶縁体を用いたノーマリーオフ型高移動度ダイヤモンドFET2022

    • Author(s)
      笹間 陽介 蔭浦 泰資 井村 将隆 渡邊 賢司 谷口 尚 内橋 隆 山口 尚秀
    • Organizer
      2022年第69回応用物理学会春季学術講演会
    • Related Report
      2021 Annual Research Report
    • Invited
  • [Presentation] High-mobility p-channel FETs based on H-terminated diamond/h-BN heterostructures2022

    • Author(s)
      Yamaguchi Takahide
    • Organizer
      The 3rd international workshop on diamond electronics in Kanazawa
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] ダイヤモンド高移動度トランジスタ2022

    • Author(s)
      笹間 陽介 山口 尚秀
    • Organizer
      SATテクノロジー・ショーケース 2022
    • Related Report
      2021 Annual Research Report
  • [Presentation] Diamond / h-BN van der Waals heterostructures for high performance transistors2021

    • Author(s)
      Yamaguchi Takahide
    • Organizer
      The 10th International Workshop on Advanced Materials Science and Nanotechnology (IWAMSN 2021)
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] h-BNヘテロ構造を用いたノーマリーオフ型高移動度ダイヤモンドトランジスタ2021

    • Author(s)
      笹間 陽介 蔭浦 泰資 井村 将隆 渡邊 賢司 谷口 尚 内橋 隆 山口 尚秀
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Modeling of Electrical Characteristics in Hydrogen-Terminated Diamond Field-Effect Transistors2021

    • Author(s)
      Yamaguchi Takahide, Yosuke Sasama, Taisuke Kageura, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi
    • Organizer
      14th International Conference on New Diamond and Nano Carbons 2020/2021
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] High-Mobility Normally-Off Hydrogen-Terminated Diamond Field-Effect Transistors with a h-BN Gate Insulator2021

    • Author(s)
      Yosuke Sasama, Taisuke Kageura, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide
    • Organizer
      14th International Conference on New Diamond and Nano Carbons 2020/2021
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 水素終端ダイヤモンド電界効果トランジスタの移動度の解析2021

    • Author(s)
      笹間 陽介, 蔭浦 泰資, 小松 克伊, 森山 悟士, 井上 純一, 井村 将隆, 渡邊 賢司, 谷口 尚, 内橋 隆, 山口 尚秀
    • Organizer
      第34回ダイヤモンドシンポジウム
    • Related Report
      2020 Annual Research Report
  • [Presentation] High-mobility transistors based on h-BN/diamond heterostructures2021

    • Author(s)
      Yamaguchi Takahide
    • Organizer
      MANA International Symposium 2021
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Mobility in h-BN gated diamond field-effect transistors2021

    • Author(s)
      Yosuke Sasama, Taisuke Kageura, Katsuyoshi Komatsu, Satoshi Moriyama, Jun-ichi Inoue, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide
    • Organizer
      MANA International Symposium 2021
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Diamond transistor with an h-BN gate dielectric2019

    • Author(s)
      Yamaguchi Takahide
    • Organizer
      13th New Diamond and Nano Carbons Conference
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Field effect transistor based on diamond/h-BN heterostructures2019

    • Author(s)
      Yamaguchi Takahide
    • Organizer
      European Materials Research Society, 2019 Fall meeting
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] h-BN/ダイヤモンドヘテロ界面に形成される二次元ホール系の量子振動2019

    • Author(s)
      笹間陽介、小松克伊、森山悟士、井村将隆、杉浦栞理、寺嶋太一、宇治進也、渡邊賢司、谷口尚、内橋隆、山口尚秀
    • Organizer
      日本物理学会2019年秋季大会
    • Related Report
      2019 Annual Research Report
  • [Remarks] 先端電子材料研究室

    • URL

      https://www.nims.go.jp/personal/yamaguchi-takahide/

    • Related Report
      2021 Annual Research Report 2020 Annual Research Report 2019 Annual Research Report
  • [Remarks] ダイヤモンドで高移動度トランジスタを実現(プレスリリース)

    • URL

      https://www.nims.go.jp/news/press/2022/01/202201180.html

    • Related Report
      2021 Annual Research Report

URL: 

Published: 2019-04-18   Modified: 2023-01-30  

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