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Development of High Efficiency Photovoltaic Cells Using Electron Localized States in Dilute Nitride Semiconductors

Research Project

Project/Area Number 19H02612
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Review Section Basic Section 30010:Crystal engineering-related
Research InstitutionSaitama University

Principal Investigator

Yaguchi Hiroyuki  埼玉大学, 理工学研究科, 教授 (50239737)

Co-Investigator(Kenkyū-buntansha) 秋山 英文  東京大学, 物性研究所, 教授 (40251491)
高宮 健吾  埼玉大学, 研究機構, 専門技術員 (70739458)
Project Period (FY) 2019-04-01 – 2022-03-31
Project Status Completed (Fiscal Year 2021)
Budget Amount *help
¥17,420,000 (Direct Cost: ¥13,400,000、Indirect Cost: ¥4,020,000)
Fiscal Year 2021: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2020: ¥6,890,000 (Direct Cost: ¥5,300,000、Indirect Cost: ¥1,590,000)
Fiscal Year 2019: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
Keywords太陽電池 / 希釈窒化物半導体 / 第一原理計算 / 電子局在状態 / アップコンバージョン発光 / 二波長励起フォトルミネッセンス / 非発光再結合 / 非発光再結合中心
Outline of Research at the Start

従来の量子ドットやエネルギーバンドの分裂を利用した方法とは異なる、希釈窒化物半導体における電子局在状態を介した2段階光吸収を活用するアプローチで中間バンド型太陽電池の変換効率向上の可能性を追求することを目的とする。そのために、電子局在状態が2段階光吸収に対して有効に機能するように第一原理計算に基づいて設計した窒素組成変調構造をエピタキシャル成長によって作製し、多波長励起フォトルミネッセンス測定で2段階光吸収の特性を評価する。以上の変換効率向上の可能性を追求した研究成果を踏まえて、中間バンド型太陽電池を試作し、特性を評価する。

Outline of Final Research Achievements

We have investigated the improvement in the conversion efficiency of intermediate-band solar cells by utilizing two-step optical absorption through electron localized states in dilute nitride semiconductors. First-principles calculations based on the supercell method revealed that the arrangement of nitrogen atoms in GaPN significantly varies the band gap energy and causes the formation of localized states. We found from the excitation power dependence of two-wavelength excited photoluminescence and photocurrent characteristics of prototype solar cells that above-gap excitation and below-gap excitation synergistically increase photogenerated carriers, which leads to the increase in the efficiency of solar cells.

Academic Significance and Societal Importance of the Research Achievements

温室効果ガスを発生しない再生可能エネルギーのさらなる活用が望まれる中で主要な役割を担う太陽光発電への期待は大きい。中間バンド型太陽電池は高い変換効率を有する太陽電池の一つとして期待されているが、実現には至っていない。本研究では、従来とは異なる、希釈窒化物半導体における電子局在状態を介した2段階光吸収を活用するアプローチについて検討した結果、波長の異なる光が相乗的に効率向上をもたらす可能性を見出した。また、効率向上の妨げとなる要因の存在を明らかにし、今後、太陽電池の効率向上のためのさらなる取り組みへの指針を得ることができた。

Report

(4 results)
  • 2021 Annual Research Report   Final Research Report ( PDF )
  • 2020 Annual Research Report
  • 2019 Annual Research Report
  • Research Products

    (16 results)

All 2022 2021 2020 2019

All Journal Article (4 results) (of which Int'l Joint Research: 2 results,  Peer Reviewed: 4 results,  Open Access: 2 results) Presentation (12 results) (of which Int'l Joint Research: 6 results)

  • [Journal Article] Detection of Nonradiative Recombination Centers in GaPN by Combining Two‐Wavelength Excited Photoluminescence and Time‐Resolved Photoluminescence2021

    • Author(s)
      Sanjida Ferdous, Hiroki Iwai, Norihiko Kamata, Hiroyuki Yaguchi, Shuhei Yagi
    • Journal Title

      physica status solidi (b)

      Volume: 258 Issue: 11

    • DOI

      10.1002/pssb.202100119

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Influence of Laser Irradiation on the Photoluminescence Intensity of InGaAsN Quantum Wells2021

    • Author(s)
      Md. Zamil Sultan, Shuhei Yagi, Kengo Takamiya, Hiroyuki Yaguchi and Osamu Ueda
    • Journal Title

      North American Academic Research Journal

      Volume: 4 Pages: 240-251

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Photoluminescence intensity change of GaP1-xNx alloys by laser irradiation2020

    • Author(s)
      Sultan Md. Zamil、Shiroma Akinori、Yagi Shuhei、Takamiya Kengo、Yaguchi Hiroyuki
    • Journal Title

      AIP Advances

      Volume: 10 Issue: 9 Pages: 095302-095302

    • DOI

      10.1063/5.0020793

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Detection of nonradiative recombination centers in GaPN (N:0.105%) by below-gap excitation light2020

    • Author(s)
      S. Ferdous, N. Kamata, S. Yagi, and H. Yaguchi
    • Journal Title

      Physica Status Solidi B

      Volume: 257 Issue: 2 Pages: 1900377-1900377

    • DOI

      10.1002/pssb.201900377

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Presentation] First-Principles Study of the Band Tail States and Optical Properties of Gallium Phosphide Nitride Alloys2022

    • Author(s)
      Hiroyuki Yaguchi
    • Organizer
      International Conference on the Physics of Semiconductors 2022
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Arsenic Composition Dependence of Up-Conversion Luminescence of GaPAsN Alloys2022

    • Author(s)
      Kengo Takamiya, Sultan Md. Zamil, Shuhei Yagi, Hiroyuki Yaguchi
    • Organizer
      International Conference on the Physics of Semiconductors 2022
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Optical Characterization of Carrier Recombination Process in GaPN Alloys: Excitation Source and Nitrogen Concentration Dependence2021

    • Author(s)
      Hiroki Iwai, Sanjida Ferdous, Norihiko Kamata, Shuhei Yagi, Hiroyuki Yaguchi
    • Organizer
      2021 MRS Fall Meeting
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 中間バンド型GaPN混晶のキャリア再結合過程の光学的評価:窒素濃度1.4%と3.2%の比較2021

    • Author(s)
      岩井 広樹, フェルドス サンジーダ, 鎌田 憲彦, 八木 修平, 矢口 裕之
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 第一原理計算を用いたGaPN混晶のバンドテイルによる光吸収についての検討2021

    • Author(s)
      矢口 裕之
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] GaPN混晶のアップコンバージョン発光へのバンドギャップエネルギーを超える励起光の影響2020

    • Author(s)
      相良 鋼, 高宮 健吾, 八木 修平, 矢口 裕之
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] 第一原理計算によるGaPN 混晶におけるバンドテイル状態の検討2020

    • Author(s)
      矢口裕之
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Photoluminescence Intensity Change of InGaAsN Quantum Well by Laser Irradiation2020

    • Author(s)
      Md Zamil Sultan, Shuhei Yagi, Kengo Takamiya, Hiroyuki Yaguchi
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Two-Wavelength Excited Photoluminescence Study of Upconversion Photoluminescence from GaPN Alloys2019

    • Author(s)
      Hiroyuki Yaguchi, Wataru Takahashi, Kengo Takamiya, Shuhei Yagi, Norihiko Kamata, Yuji Hazama and Hidefumi Akiyama
    • Organizer
      13th International Conference on Nitride Semiconductors
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Laser Induced Degradation of Photoluminescence Intensity in GaPN2019

    • Author(s)
      Md Zamil Sultan, Akinori Shiroma, Shuhei Yagi, Kengo Takamiya, Hiroyuki Yaguchi
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Upconversion Luminescence from GaPN Alloys with Various N Compositions2019

    • Author(s)
      Kengo Takamiya, Wataru Takahashi, Shuhei Yagi, Norihiko Kamata, Yuji Hazama, Hidefumi Akiyama, and Hiroyuki Yaguchi
    • Organizer
      7th International Workshop on Eptaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Photoluminescence Intensity Change of GaPN by Laser Irradiation2019

    • Author(s)
      Sultan Md. Zamil, Akinori Shiroma, Shuhei Yagi, Kengo Takamiya, and Hiroyuki Yaguchi
    • Organizer
      7th International Workshop on Eptaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research

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Published: 2019-04-18   Modified: 2023-01-30  

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